controlled growth of zinc oxide microrods by hydrothermal process

... 2013 Keywords: ZnO microrods Hydrothermal process Porous ceramic substrates Catalytic application abstract The growth of zinc oxide (ZnO) microrods on porous ceramic substrates by mild hydrothermal process was ... during the growth process. Fig. 5. Morphology of ZnO microrods grown on cordierite substrates by hydrothermal process after 10 h of growth. Th...

Ngày tải lên: 06/05/2014, 13:23

... Temperature -Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders Z. W. Pan, † Z. R. Dai, † L. Xu, ‡ S. T. Lee, ‡, * and Z. L. Wang* ,†,§ School of Materials ... length of the Si core is only one-third to one-half of the entire length of the wire, and the rest of the wire is pure amorphous silicon oxide. We also investigated the cross se...

Ngày tải lên: 16/03/2014, 15:30

... VNU Journal of Science, Mathematics - Physics 24 (2008) 16-23 16 Investigation of zinc oxide thin film by spectroscopic ellipsometry Nguyen Nang Dinh 1∗ , ... determination of optical constants of thin films. In this study, we present the results gained by analyzing spectroscopic ellipsometry of ZnO thin film combined with comparison of transmission ... index of the...

Ngày tải lên: 28/03/2014, 13:20

... properties of CBD deposited CdS thin films have been studied by varying the processing parameters and the Cd/S ratio of the starting precursors in order to better understand the growth conditions. ... VNU Journal of Science, Mathematics - Physics 24 (2008) 119-123 119 Growth of CdS thin films by chemical bath deposition technique Be Xuan Hop*, ... identified as a low pro...

Ngày tải lên: 14/03/2014, 13:20

... formation of a titanium oxide (TiO x ) phase by removal of oxygen from the silica layer [9]. The re- duction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs. The growth of silica ... for the growth of SiONWs. After thermally oxidizing the Si substrates, Ni films of 5 nm were deposited on the oxide layer by e-beam evapora- tion. TiN films were...

Ngày tải lên: 16/03/2014, 15:04

... in the growth of SiNWs. Because this growth process involves solid–liquid–solid phases, it is named as a SLS growth, which is in fact an analogy of the VLS mechanism. The growth process of the ... species were ablated o by the laser beam, and the growth of the SiNWs is controlled by the well-known VLS mechanism. The central idea of the VLS growth of SiNWs is...

Ngày tải lên: 16/03/2014, 15:14

... preparation process for the XRD analysis, while SiS 2 comes mainly from the decomposition of SiS. The discussion of the growth mechanism is displayed below. As the function of silicon oxide in the ... (1 1 1) silicon wafers with a resistivity of about 0.001 O cm by means of a low-vacuum CVD system. First, several pieces of silicon wafers and plenty of sulfur powders were...

Ngày tải lên: 16/03/2014, 15:21

... (HVD). Studying the forma- tion mechanisms of nanowires is important from the view- point of fundamental physics of growth processes as well as for fabrication of controllably structures nanowires ... mononuclear to poly- nuclear mode of nucleation at the wire top as the radius of wire increases. Some of the authors of this paper developed a more detailed model of wire gr...

Ngày tải lên: 16/03/2014, 15:32

... optimization of reaction conditions of the synthesis of hexagonal tungsten oxide nanorods using ani- line with sodium sulfate as structure-directing templates by hydrothermal self-assembling process. 2. ... size of particles constituting the product. The details of the effect of sulfate on the formation of WO 3 nanocrystal are not clear up to date. However, it is known t...

Ngày tải lên: 19/03/2014, 16:47

... properties of tungsten oxide prepared by surfactant-assisted process Yuzhi Zhang à , Jiaguo Yuan, Jun Le, Lixin Song, Xingfang Hu The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of ... 3c of sample D calcined at a high temperature of 400 1C, the former morphology of sample C changed rimous and rough. Such surface mophology of sample D could be due to...

Ngày tải lên: 20/03/2014, 13:08