electrochemistry of silicon 2002 - lehmann

... Index Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications. Volker Lehmann Copyright © 2002 Wiley-VCH Verlag GmbH ISBNs: 3-5 2 7-2 932 1-3 (Hardcover); 3-5 2 7-6 002 7-2 (Electronic) Coulomb-blockade ... Instrumentation Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications. Volker Lehmann Copyright © 2002 W...

Ngày tải lên: 16/04/2014, 11:20

... Secretary of Defense for Acquisition and Technology, estab- lished a goal that a minimum of 50 percent of DoD service acquisi- tions, measured in both dollars and contracts, be performance-based by ... management of procurement of services. • A summary of such steps planned for the following fiscal year. • An estimate of the amount DoD will spend on the procurement of services...

Ngày tải lên: 07/03/2014, 05:20

... electron-transfer pathway. The molybdop- terin cofactor contacts the nearest [2Fe-2S] cluster Fe-S I through the exocyclic NH 2 of the pyranopterin ring system and the S .c atom of one of the [Fe-S] ... Investigation of metal ion uptake reactivities of [3Fe-4S] clusters in proteins: voltammetry of co-adsorbed ferredoxin-aminocyclitol films at graphite electrodes and spectroscopic i...

Ngày tải lên: 07/03/2014, 15:20

... XRD pattern of the product, given in Fig. 2b, is char- acteristic of cubic silicon with a small impurity of silica. Reaction of silicon powder with activated car- bon in the absence of H 2 , by ... proba- bly producing a suboxide-type species. As part of our program on the carbothermal synthesis of in- organic nanowires [12–14], we have been investi- gating carbon-assisted s...

Ngày tải lên: 16/03/2014, 15:04

... and 2-terminal methods. 3. Results 3.1. Silicon nanowires Fig. 1 shows the morphology of SiNWs formed on a silicon wa- fer at 569 K. The size of the wires ranged from 5 to 100 nm in diam- eter ... corresponding to the first plasmon-loss peak of Si appears for silicon crystal [16]. The peak for the first plasmon-loss of SiO 2 is 22.4 eV [16]. Then, the plasmon-loss images were ob-...

Ngày tải lên: 16/03/2014, 15:05

... thickness of 5 nm. Portions of the cata- lyst-coated substrates were then placed in a quartz tube inside a CVD furnace. As the furnace temperature was increased, flow of di- luted H 2 (100 standard ... preventing direct integration of Si nanowires in the CMOS process. In this regard, Pt is a good can- didate catalyst for the growth of Si nanowires via the VLS mech- anism. It is known...

Ngày tải lên: 16/03/2014, 15:05

... small di- mensions, unique shapes, and high surface-to- volume ratio. The recent progress in large-scale production of uniform and thin SiNWs has at- tracted investigation interests of the quantum confinement ... crystal silicon. A very sharp and Fig. 1. A typical SEM image of the morphology of aligned silicon nanowires of uniform diameter distribution on a silica substrate. Fig....

Ngày tải lên: 16/03/2014, 15:06

... oxide exceeded the growth rate of crystal silicon, outer layer of silicon oxide will surround the crystal sil- icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer coalesced together ... mechanism of the silicon nanoparticle chains. They proposed that nucleation and growth occurring alternatively re- sulted in the formation of chains o...

Ngày tải lên: 16/03/2014, 15:09

... author. Fax: + 1-4 0 5-3 2 5-5 813. E-mail address: resasco@ou.edu (D.E. Resasco). 000 9-2 614/$ - see front matter Ó 2003 Elsevier B.V. All rights reserved. doi:10.1016/S000 9-2 614(03)0118 7-4 and silicon tetrachloride ... re- action temperature is 500 °C. Silicon nanowires produced at this temperature have a well-crystal- lized silicon core with a very thin amorphous...

Ngày tải lên: 16/03/2014, 15:09

... ultra sensitive bio-sensor, field effect transistors (FETs), and single - electron detector [4]. The fabrication of SiNWs involves metal-assisted or metal- free growth. The metal-assisted growth ... sample of synthesis of SiNWs without a metal catalyst [17]. In this case, the SiO x vapor decomposes into Si atoms, which act as the nuclear of SiNWs covered by shells of silicon o...

Ngày tải lên: 16/03/2014, 15:09