poisson apos s ratio of silicon carbide scs 2 al

... lattice sites of 6H-SiC: Combined EPR and density functional theory study Physical Review B, Vol 71, No 12, March 20 05, 125 2 02- 1- 125 2 02- 22, ISSN 1098-0 121 Carlsson, P.; Son, N.T.; Umeda, T.; Isoya, ... (Bockstedte et al. , 20 03), a variety of ISi, IC, VSi, and VC exists in 3C-SiC If it is assumed that a similar variety of point defects also exists in 4H-SiC, it is possible that the values of CI* ... vacancy-assisted clustering of antisites in SiC Physical Review B, Vol 68, No 15, October 20 03, 15 520 8-1-15 520 8-9, ISSN 1098-0 121 Ryvkin, S. M & Shlimak, I .S (1973) A doped highly compensated crystal semiconductor...

Ngày tải lên: 20/06/2014, 04:20

... Synthesis of Silicon Carbide 389 Alexander S Mukasyan Chapter 18 In Situ Synthesis of Silicon- Silicon Carbide Composites from SiO2-C-Mg System via Self-Propagating High-Temperature Synthesis  ... 13.71 9. 52 Xh-1: 0.0 62 ID2-1: E16-1: x 29 Si x 29 Si x 29 Si ID2 -2: E16 -2: (3-3') 1.87 2. 76 Xh -2: 0.146 x 29 Si x 29 Si x 29 Si ID2-3: E16-3: (2- 2') 0.74 0.66 Xh-3: 0.156 x 29 Si x 29 Si x 29 Si Table ... similar isotropic line with g = 2. 0037, labeled as SI-11, has also been observed together with SI-5 defect signal in HPSI 4H-SiC in (Son et al. , 20 04; Carlsson P et al. , 20 07) but was not assigned...

Ngày tải lên: 20/06/2014, 04:20

... of a silicon substrate after exposed to hydrogen chloride gas Figure 21 shows SEM photograph of the silicon substrate surface and silicon carbide film Figure 21 (a) is the silicon substrate surface ... (3 /2) H2 (3)  2Si +3H2 (4)  SiHCl3 +H2 (5) 2SiH3 SiH3 (1) Si2H6 Si etching (Habuka et al. , 20 05): Si+3HCl Chlorination of SiH3: SiH3+3HCl  SiHCl3+ (5 /2) H2 (6) 62 Properties and Applications of ... temperature deposition of polycrystalline silicon carbide film using monomethylsilane gas 57 Fig Process of silicon carbide film deposition accompanying annealing step Fig Process of silicon carbide...

Ngày tải lên: 20/06/2014, 04:20

... constant regardless of the oxidation thickness By the way, since the density of Si atoms in SiC (4.80×1 022 cm−3 ) (19) is almost the same as that in Si (5×1 022 cm−3 ) and the residual carbon is ... magneto-optical properties of Mn-doped SiC films prepared on 3C-SiC wafers (Wang et al. , 20 09) as well as studies of low-Mn-doped 6HSiC (Song et al. , 20 09) and polycrystalline 3C-SiC (Ma et al. , 20 07) all ... computational setup 2. 1 SiC-TM material system Crystal lattice of any SiC polytype can be represented as a sequence of hexagonal closepacked silicon- carbon bilayers Different bilayer stacking sequences...

Ngày tải lên: 20/06/2014, 04:20

... electrodynamical analysis of metamaterial waveguides (Smith et al. , 20 05; Chen et al. , 20 06; Asmontas et al, 20 09; Gric et al. , 20 10; Nickelson et al. , 20 08) or other lossy material waveguides (Bucinskas ... et al. , 20 10; Asmontas et al. , 20 10; Nickelson et al. , 20 09; Swillam et al. , 20 08; Nickelson et al. , 20 08; Asmontas et al. , 20 06) In this chapter we present the electrodynamical analysis of open ... computer software based on the method SIE (Section 2) in the MATLAB language This software let us calculate the dispersion characteristics of waveguides with complicated cross-sectional shapes as well...

Ngày tải lên: 20/06/2014, 04:20

... experimental feasibility of this new class of devices in the THz-region Also, photo-sensitivity of these new classes of devices will be included in the chapter Importance of SiC as a base semiconductor ... phosphorous (P) N substitutes on C sites in the lattice, while P on Si sites The most common acceptors are aluminum (Al) and boron (B) which substitutes on Si sites Semiconductor Si GaAs 4H-SiC ... waveguide shows dispersion less transmission of THz signals with very low attenuation However, the residual edge roughness from wafer sawing can cause a small degree of radiation loss For higher...

Ngày tải lên: 20/06/2014, 04:20

... to SiC whiskers, the synthesis process also usually produces some amount of (usually unwanted) non-whisker SiC particles which varies depending on processing details After synthesis, whiskers ... Ta5Si3 with carbon solubility Compound ΔH (kcal/g atom)* Reaction SiC -26 .7 4Ta+SiC = Ta2C+Ta2Si Ta2Si -10.1 3Ta+SiC = TaC+Ta2Si Ta5Si3 -9.0 5Ta+2SiC = 2Ta2C+TaSi2 -8.0 3Ta+2SiC = 2TaC+TaSi2 TaSi2 ... Ni31Si 12 → Ni31Si 12+ Ni2Si → Ni2Si (Madsen et al. , 1998 & Bächli et al. , 1998) This is the reason why Ni31Si 12 has been found at the surface in some cases, see eg Refs (Han & Lee, 20 02; Han et al. ,...

Ngày tải lên: 20/06/2014, 04:20

... Analysis of a random network of passive elements typically starts with basic principles of circuit analysis Such analyses have provided insight into the electrical response of the systems in question ... O2(g)  SiO(g) + CO(g) 2SiC (s) + 3Al2 O3 (s) + 3O2(g)  3Al2 O3  2SiO2 (s) + 2CO(g) SiC (s) + O2(g)  SiO2(l) + C (s) (11) ( 12) (13) (14) As indicated above, the presence of oxygen in the atmosphere ... composite itself is considered as an electrical circuit consisting of a large number of passive elements, such as resistors and capacitors, which are themselves models of individual microstructural features...

Ngày tải lên: 20/06/2014, 04:20

... post-test samples are illustrated in order to discuss about the resistance to oxidation processes of C/SiC in terms of active and passive oxidation of silicon carbide Aerospace applications for ... the C/SiC samples associated with the formation of a silica glassy oxide scale (Fig 10), and, at the same time, the partial ablation of the samples due to the loss of silicon as SiO2 and SiO The ... intensities of oxygen and argon emission spectral lines respectively, is measured along the 24 2 Properties and Applications of Silicon Carbide discharge zone The transitions at 844.6 nm and at 8 42. 4...

Ngày tải lên: 20/06/2014, 04:20

... 27 2 B2 24 6 27 9 27 2 B3 24 2 28 7 29 4 B4 23 3 23 4 22 5 B5 23 7 23 4 22 9 B6 24 1 27 1 26 9 B7 23 2 27 2 27 2 C1 22 6 3 82 354 C2 21 9 374 363 C3 22 4 364 359 C4 21 8 340 322 C5 188 349 344 C6 23 3 355 344 D1 27 4 374 ... 26 2 Properties and Applications of Silicon Carbide Manufacturers A/B/C/D Power frequency spark-over voltage (kV) Positive Negative A7 193 22 7 22 7 A8 170 22 2 22 8 A9 178 22 5 22 4 B1 24 4 28 4 27 2 ... 12 C(n,)9Be 28 100000 10000 25 Si(n,3) Mg 28 Si(n,8+9 )25 Mg 1000 12 28 Si(n,n' )28 Si 100 1000 C(n,n')3 100 28 Si(n,10+11+ 12) 25Mg 28 Si(n,6+7 )25 Mg 10 10 28 Si(n,5 )25 Mg Si SiC 28 Si(n,4 )25 Mg...

Ngày tải lên: 20/06/2014, 04:20

... characteristic of typical covalently bonded materials It seems that SiC can create many opportunities for chemists, physicists, engineers, health professional and biomedical researches (Presas et al. , ... implantable medical devices: (1) single crystal silicon (Si), (2) polycrystalline silicon, (3) silicon oxide (SiO2), (4) Si3N4, (5) single crystal cubic silicon carbide (3C-SiC or b-SiC), (6) titanium ... attributed to the SiC-coated stent (Elbaz et al. , 20 02; Hamm et al. , 20 03; 3 02 Properties and Applications of Silicon Carbide Kalnins et al. , 20 02) In a direct comparison of silicon wafers and SiC-coated...

Ngày tải lên: 20/06/2014, 04:20

... together with its surrounding tissues was placed in 4% formalin solution for pathological assessment and SEM Cell analysis 328 Properties and Applications of Silicon Carbide Osteoblast cells spreading ... factors In our studies (Khosroshahi et al. , 20 07; Khosroshahi), 20 07; Khosroshahi et al. , 20 08; Khosroshahi et al. , 20 08; Khosroshahi et al. , 20 09), it is shown that the wettability of the surface can ... (20 00) Coated Stents in Small Coronary Vessels A Successful Strategy? Progress in Biomedical Research, 22 1 -22 3 Harder, C.; Rzany,A & Schaldach, M (1999) Coating of Vascular Stents with Antithrombogenic...

Ngày tải lên: 20/06/2014, 04:20

... et al, 20 10) CVD is one of the suitable used methods to produce SiC in various shapes of thin films powders, whiskers and nanorods using Si-C-HCl system Amorphous fine silicon carbide powders ... carbothermal reduction method for the synthesis of SiC powders Nevertheless, this process involves numerous steps, has an excessive demand for energy and provides rather poor quality materials Several ... process from different silicon and carbon Precursors (V Raman et al, 1995) (J Li et al, 20 00) used two step sol-gel process for the synthesis of SiC precursors The authors synthesized phenolic resin-SiO2...

Ngày tải lên: 20/06/2014, 04:20

... is not easy to accomplish a self-sustained SHS process in this system However, almost all available literature on CS of silicon carbide is related to this chemical pathway Several approaches ... effective synthesis of relatively small (~1 m) SiC particles with the amount of free carbon less than 0.5 ew.% as a major impurity Also it was shown that SHS process consists of two main stages: Stage ... Si-C-N2 system Method for combustion synthesis of SiC/Si3N4 powders in Si-C-(-CF2-CF2-)n system was also developed (Kharatyan et al. , 20 06) It was shown that the use of fluoroplastic as an activating...

Ngày tải lên: 20/06/2014, 04:20

... C, 4SiO2 + 2N2 →2Si2N2O + 3O2; 4SiC + O2 + 2N2 → 2Si2N2O + 4C; 3SiC + 2N2 → Si3N4 + 3C, then 2SiC + 2R2O3 + N2 + 1.5O2  2R2O3·Si2N2O (J phase) + 2CO 2SiC + R2O3 + N2 + 1.5O2  R2O3·Si2N2O (K ... La2O3.Si2N2O (LaSiNO2) J: 2La2O3.Si2N2O J (La2SiNO3.5) H: La4.67(SiO4)3O 1:1 K La5(SiO4)3N 1:1: La2SiO5 H 1 :2 2:1 1 :2: La2Si2O7 Si2N2O Si3N4 Mol % SiO2 Fig Subsolidus phase diagram of the system ... Gd2O3.Si3N4 J: 2Gd2O3.Si2N2O H: Gd4.67(SiO4)3O 1:1: Gd2O3.SiO2 1 :2: Gd2O3.2SiO2 J 1:1 H H 1 :2 M SiO2 Si2N2O Si3N4 Mol % SiC Fig 10 Subsolidus phase diagram of the system SiC-Si3N4-Gd2O3-SiO2...

Ngày tải lên: 20/06/2014, 04:20

... leads to change in local standoff distances and impact angles of abrasives that ultimately results in lesser erosion on the lateral walls of the kerfs Based on these aspects, an in-depth analysis ... Influence of SOD on characteristics of kerf generated in double pass Furthermore, the actual standoff distance (SODactual) in a second (or subsequent) pass is the sum of SOD set in the first pass and ... geometries/characteristics were discussed Additionally, trials for compensating the increase in SOD at a second jet pass were performed as follows: 1st pass with SOD = 3mm and 2nd pass with a...

Ngày tải lên: 20/06/2014, 04:20

... properties, such as wear resistance and self-lubricating (Ashurst et al. , 20 04) SiC is commercially available in various forms/phases (polytypes) such as single crystal, polycrystalline (sintered ... cross-section of the µ-LAM process The objective of the current study is to determine the effect of laser heating (using the µLAM process) on the material removal of single crystal 4H -Silicon Carbide ... forces due to the hardness of the material (Shayan et al. , 20 09) The second analysis done was to study the effects of laser heating on the DBT of the material To determine this, two-dimensional scratch/groove...

Ngày tải lên: 20/06/2014, 04:20

... J.A (20 10) Simulation of thermal effects for analysis of micro Laser Assisted Machining, Proceedings of ICOMM conference, Madison, WI Ductile Mode Micro Laser Assisted Machining of Silicon Carbide ... turning of silicon substrates in ductile-regime, Journal of Materials Processing Technology, Vol.73, pp 42- 48 Marusich, T.D.; Askari, E (20 01) Modelling residual stress and workpiece surfaces in ... H .S. ; Carter, C.H (1996) Recent progress in SiC crystal growth, Institute of Physics, Vol no 1 42, pp.17 Virkar, S. R.; Patten, J.A (20 09) Numerical simulations and analysis of thermal effects...

Ngày tải lên: 20/06/2014, 04:20

... Nanoscale Res Lett (20 10) 5 :25 2 25 6 source for the synthesis of SiC NWs in large-scale, largequantity and low-cost production is still necessary Here, we reported that bamboo carbon was used as ... faster solidification speed of SiC than SiO2, which is consistent with the previous reports [28 , 29 ] Photoluminescence Property of SiC NWs Figure shows the Photoluminescence (PL) spectrum of SiC ... vapor diffusion The SEM image of bamboo Fig XRD pattern of the obtained products 123 25 4 Nanoscale Res Lett (20 10) 5 :25 2 25 6 SiO2 s) + 3C (s) ! SiC (s) + 2CO (g) ð1Þ Reaction (1) is generally accepted...

Ngày tải lên: 22/06/2014, 00:20

... gives m in terms of φ That S ζ1 2 ζ3 S ζ1 2 ζ3 = is seen by getting rid of each pair of ζ s in succession thus:— S ζ1 (S ζ1 V 2 ζ3 ) 2 ζ3 = S V 2 ζ3 2 ζ3 = S ( 2 ζ3 − 2 S 2 ζ3 ) ζ3 = 2 3 ... the case of small strain these distinctions need not be made Stress in terms of strain 14 To express stress in terms of strain we assume any displacement and consequent strain at every point of ... D D Again φζ1 S φω φ 2 Vζ1 2 = φζ1 S φωV φ 2 Vζ1 2 = φζ1 S φω(−ζ1 S 2 φ 2 + 2 S ζ1 φ 2 ) = −φ(ζ1 S ζ1 φω )S 2 φ 2 + φ(ζ1 S ζ1 φ 2 ) S 2 φω = 2 ω S ζ φζ − 2 ζ S ζ φω = 2 ω S ζ φζ + φ3 ω...

Ngày tải lên: 28/06/2014, 19:20