Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope

... (2002) 999 – 1002www.elsevier.com/locate/physe Electronic transport properties of single- crystal silicon nanowires fabricated using an atomic force microscope N. ClÃementa, D. Tonneaua; ∗, ... silicon- on-insulator (SOI) using a lithog-raphy process based on an atomic force microscope (AFM). SOI wafers were ÿrst thinned, prepatterned and doped using conventional microelectronics processes ... oxide, leading to silicon nano-structures supported on an insulating layer (Fig. 1).As-doped Unibond J silicon- on-insulator (SOI)samples with an ultra-thin single- crystal silicon toplayer...

Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

... thus the study of synthesis and properties of nanostructured silicon material is one of the mostimportant subjects in the research of nanostructuredmaterial ﬁeld. Nanostructured silicon such ... axis of single crystal Si. Another SAED pattern was takenalong [2 1 1] zone axis of single crystal Si (see Fig. 2b,left inset). From the data above, we can conﬁrm theas-grown prism of single crystal ... planes are wellmatched to Fe(1 1 0). Thus, the speciﬁc plane of Feparticles play an important role in initiating nucleationand growth of silicon nanostructures, resulting in mor-phology and...

cross plane electronic and thermal transport properties of p type la0.67sr0.33mno3 lamno3 perovskite oxide metal semiconductor superlattices

... Terasaki, Transport properties and electronic states of the thermoelec-tric oxide NaCo2O4,” Physica B 328(1–2), 63 (2003).7I.Terasaki,H.Tanaka,A.Satake,S.Okada,andT.Fujii,“Out -of- planether-mal ... system for thermoelectric power genera-tion. Lanthanum strontium manganate La0.67Sr0.33MnO3(LSMO) was i nvestigate d as a metal and l anthanum m angan ate,LaMnO3(LMO), as a p-type semiconductor ... transmission electron microscopy (TEM) images of the superlattice were taken using an FEI Titan 80–300 operat-ing at 300 kV, revealing the presence of an epitaxial layeredstructure of high crystalline...

Báo cáo " Influence of intradot Coulomb interaction on transport properties of an Aharonov-Bohm interferometer " ppt

... equation of motion approach, we haveinvestigated the electronic transport properties of an Aharonov-Bohm (AB) ring in the presence of a magnetic field with a quantum dot inserted in one arm of the ... tunneling (leadto lead) and a resonant tunneling via the quantum dot (lead to dot to lead). The interference betweenthe resonant transport through the quantum dot and the direct channel gives rise ... Journal of Science, Mathematics - Physics 23 (2007) 47-54Influence of intradot Coulomb interaction on transport properties of an Aharonov-Bohm interferometerDo Ngoc Son1,2, Bach Thanh Cong1,∗,1Department...

Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation

... Morphology and growth mechanism study of self-assembled silicon nanowires synthesized by thermal evaporationZ. Zhang1, X.H. Fan, L. Xu, C.S. Lee, S.T. Lee*Center of Super-Diamond and Advanced ... light emission properties at room temper-ature, because of its indirect band gap of $1.1 eVand a small exciton binding energy ($15 eV). Incontrast, silicon nanowires (SiNWs) of a few na-nometers ... chemical properties of nano-materials can be very dierentfrom their bulk counterparts and depend sensi-tively on their size, shape and composition. Forexample, bulk silicon is very good in electronic...

Polymer assisted synthesis of aligned amorphous silicon nanowires and their core shell structures with au nanoparticles

... synthesis of aligned amorphous silicon nanowires and their core/shell structures with Au nanoparticlesXing-bin Yana,b, Tao Xua, Shan Xua,b, Gang Chena,b,Qun-ji Xuea, Sheng-rong Yanga,*aState ... surfaces of diﬀerent type single crystal silicon substrates (10 0) and (1 1 1), respectively, thatsequentially cleaned with deionized water, ethanol, andacetone, to allow the formation of the ... spectra of the aligned nanowires (a) and the particle-linked wires (b).Fig. 3. (a) Low magniﬁcation TEM image of SiNWs; (b) TEM image of a single particle-linked wire; (c) TEM image of a single...

Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method

... synthesis of carbon nanotubes [1], much attempt hasbeen devoted to synthesizing one-dimensional nanostructure materi-als, such as nanowires, nanorods, nanotubes and nanoribbons [2].These nanomaterials ... 2008Keywords:Tin catalyst Silicon nanowires Hydrogen radicalsVLS mechanismPhase diagramTin-catalyzed silicon nanowires (SiNWs) were synthesized at various hydrogen gas ﬂow rates using thehydrogen ... depen-dence of electrical, optical and magnetic properties [3–8]. They arealso expected to play an important role as both interconnections andfunctional units in fabrication of e lectronic, optoelectronic...

Ultrafast growth of single crystalline si nanowires

... Ultrafast growth of single- crystalline Si nanowires J.B. Chang, J.Z. Liu, P.X. Yan⁎, L.F. Bai, Z.J. Yan, X.M. Yuan, Q. YangInstitute for Plasma and Metal Materials, Lanzhou University, Lanzhou 730000, ... catalysts and (b) nanowires with Fe, (c) TEM image showing nanopartical catalystsat the end of nanowires. (d) TEM image of an individual smooth nanowire and corresponding SAED pattern.2126 J.B. Chang ... various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single- crystalline Si nanowires and controlling...

Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism

... growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanismD.P. Yua; ∗, Y.J. Xinga; b, Q.L. Hanga, H.F. Yana,J.Xua, Z.H. Xib, S.Q. FengaaDepartment of ... pio-neering work of the discovery of carbon nanotubesby Iijima [1] and other quasi-one-dimensional nanos-tructures such as silicon nanowires (SiNWs) [2,3].Because bulk Si is an indirect gap material, ... were employedfor analysis of the morphology and microstructure of the product.3. Results and discussionsFig. 1(a) shows plan view of SEM image revealingthe general morphology of the SiNWs grown...

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

... 134www.elsevier.com/locate/physe Silicon nanowires fabricated by thermal evaporation of silicon monoxideJunjie Niua, Jian Shaa; b, Deren Yanga;∗aState Key Lab of Silicon Materials, Zhejiang University, Hangzhou ... crystalline silicon nanowires (SiNWs) with a diameter of ∼30 nm and length of tens of micrometers onAl2O3templates and silicon wafers were synthesized by the thermal evaporation of silicon monoxide ... electrical transport properties [7], and noisecharacteristics [8], etc. Therefore, both the fabrica-tion of large-scale uniform SiNWs and the under-standing of the growth mechanism of SiNWs...

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