... [0,T], uniformly (5. 4) and (5. 5) that inf ZCh~[s,T] = ] ( x , y) + > f ( x , y) - inf ZEZ~[s,T] c(1 + E L II(t, X(t), Y(t), Z(t))dt proving the lemma [] Next, for any x E ]R and r > 0, we define ... set r = Recall that by Proposition 3.6 and Theorem 3.7, for any p > 0, and fixed x E IR, we can first choose 5, e > depending only on x and Q~(1), so that (5. 7) O
Ngày tải lên: 10/08/2014, 20:20
... cavity formed by interfaces B and C can be controlled by thinning the GaN buffer and other epilayers (GaN barriers / cap and QWs) The purpose of thinning these layers is to increase the period ... 4.13, there is a valley at 417 nm and an adjacent peak at 4 25 nm The oscillation period around this wavelength region is about 16 nm, and the valley-to-peak 155 Chapter Optimization of GaN-based ... substrate (Δn ≈ 0.8), and GaN cap / first SiO2 layer of DBR (Δn ≈ 1) These three interfaces are referred to as interfaces A, B and C, respectively, as indicated in Fig 5. 1 The cavities formed...
Ngày tải lên: 14/09/2015, 14:02
Tài liệu RF MEMS And Their Applications P2 docx
... Electrostrictive Thermal 35 Comparison of electromechanical transducers Fractional stroke (%) Maximum energy density (J cm−3 ) 32 50 0.2 0.2 50 0.004 0.0 25 0.0 35 0.07 0.032 25. 5 Efficiency Speed High ... Cl (1.6) (1.7) In Equations (1.6) and (1.7) Ll and Cl represent the inductance and capacitance per unit length of the line, and ε and µ are the permittivity and permeability of the transmission ... the free end of the bar: g EN x ˙ (1.26) V = Rm Ferrites, and metallic alloys such as Permalloy ( 45% Ni + 55 % Fe), Alfer (13% Al + 87% Fe) and Alcofer (12% Al + 2% Co + 86% Fe) are some of the common...
Ngày tải lên: 22/12/2013, 20:18
Tài liệu RF MEMS And Their Applications P1 pdf
... capacitors 4 .5 Conclusions References vii 117 118 119 123 124 1 25 127 128 141 146 148 148 151 152 152 156 157 158 160 162 163 1 65 174 1 75 178 183 183 184 184 1 85 188 194 198 200 211 212 2 15 2 15 2 15 217 ... method 2.7 .5 Polymeric MEMS architecture with silicon, metal and ceramics 2.7.6 Microstereolithography integrated with thick-film lithography 2.8 Conclusions References 51 51 51 53 54 54 57 61 61 ... MEMS 2 .5 Bulk micromachining for silicon-based MEMS 2 .5. 1 Isotropic and orientation-dependent wet etching 2 .5. 2 Dry etching 2 .5. 3 Buried oxide process 2 .5. 4 Silicon fusion bonding 2 .5. 5 Anodic...
Ngày tải lên: 22/12/2013, 20:18
Determinants and their applications in mathematical physics vein r , dale p
... 51 51 52 54 55 57 59 60 60 63 64 65 65 69 73 79 79 79 Contents 4 .5 4.6 4.7 4.8 4.9 4.10 4.11 4.12 4.4.3 The Generalized Hyperbolic Functions Centrosymmetric Determinants 4 .5. 1 ... A12,23 = −A21,23 = −A12,32 = A21,32 = M12,23 = N34,14 , (6) (6) (6) A1 35, 2 35 = −A1 35, 253 = A1 35, 523 = A3 15, 253 = −M1 35, 2 35 = −N246,146 , (n) (n) (n) Ai2 i1 i3 ;j1 j2 j3 = −Ai1 i2 i3 ;j1 j2 j3 ... 5. 4.2 First Cofactors 5. 4.3 First and Second Cofactors 5. 4.4 Third and Fourth Cofactors 5. 4 .5 Three Further Identities 5. 5 Determinants...
Ngày tải lên: 17/03/2014, 14:29
ammonia sensors and their applications — a review
... [63] 5 400 ◦ C Low selectivity drift ppm [70] ∼1 Up to 600 ◦ C Low selectivity ppm [74,79] ∼3 Up to 150 ◦ C (regeneration) Irreversible reactions 50 M (90 ppb) [ 85] ppt [87] ppb [90] ∼1 5 5 37 ... Sensors and Actuators B 107 (20 05) 666–677 Fig Energy band diagram showing the Schottky barrier height at the grain boundary of tin oxide without and with a chemically reducing gas [51 ] chemisorption ... applied [55 ], like principle component analysis [56 ], artificial neural networks, also known as the artificial nose [4,10 ,57 ] or conductance scanning at a periodically varied temperature [58 ] Varying...
Ngày tải lên: 19/03/2014, 16:47
Báo cáo "The role of color luminescence centers Mn, Cu, Co in the semicondutors with wide band gap ZnS, ZnO and their applications " pptx
... a: x = b: x = 4.10 -5 c: x = 6.10 -5 d: x = 8.10 -5 e: x = 1.10-4 f: x = 3.10-4 g: x = 3 .5. 10-4 h: x = 5. 10-4 5 104 a: x = 0.02 b: x = 0.04 c: x = 0.06 d: x = 0.10 e: x = 0. 15 f: x = 0.20 4×104 ... decrease Hence, at xCu = 5. 10-4 mol% the intensities of these two bands are equal to each other and they merge into one wide band ranging from 476 nm to 53 3 nm The blue and green bands are characterized ... luminescence extinguishing curve of 476 nm band a: 30 ns b: 35 ns c: 50 ns d: 65 ns e: 80 ns Fig 10 Time-resolved PL spectra of 476 nm band of bulk sample ZnS:Cu (xCu = 3 .5. 10-4 mol%) at 300 K excited by...
Ngày tải lên: 22/03/2014, 11:20
Đề tài " Sum rules for Jacobi matrices and their applications to spectral theory " pdf
... 5. 1, and Corollary 5. 3, we have Theorem 5. 5 For any Jacobi matrix, Q(J) ≥ (5. 25) and Z(J) ≥ − log(2) (5. 26) If µJn → µJ weakly, then Z(J) ≤ lim inf Z(Jn ) (5. 27) and Q(J) ≤ lim inf Q(Jn ) (5. 28) ... ν-ac, (5. 11)/ (5. 12) is trivial, so suppose µ = f dν and let (5. 13) d˜ = χ{x|f (x)=0} dν ν so ν and µ are mutually ac Then, ˜ (5. 14) d˜ ν dµ dµ d˜ ν ≤ log dµ dµ = log ν (X) ˜ S(µ | ν) = (5. 15) log ... of Mathematics, 158 (2003), 253 –321 Sum rules for Jacobi matrices and their applications to spectral theory By Rowan Killip and Barry Simon* Abstract We discuss the proof of and systematic application...
Ngày tải lên: 28/03/2014, 22:20
determinants and their applications in mathematical physics - r. vein, p. dale
... 51 51 52 54 55 57 59 60 60 63 64 65 65 69 73 79 79 79 Contents 4 .5 4.6 4.7 4.8 4.9 4.10 4.11 4.12 4.4.3 The Generalized Hyperbolic Functions Centrosymmetric Determinants 4 .5. 1 ... A12,23 = −A21,23 = −A12,32 = A21,32 = M12,23 = N34,14 , (6) (6) (6) A1 35, 2 35 = −A1 35, 253 = A1 35, 523 = A3 15, 253 = −M1 35, 2 35 = −N246,146 , (n) (n) (n) Ai2 i1 i3 ;j1 j2 j3 = −Ai1 i2 i3 ;j1 j2 j3 ... 5. 4.2 First Cofactors 5. 4.3 First and Second Cofactors 5. 4.4 Third and Fourth Cofactors 5. 4 .5 Three Further Identities 5. 5 Determinants...
Ngày tải lên: 31/03/2014, 15:02
quadratic forms and their applications
... 49: 49: 50 : 51 : 52 : 52 : 52 : 53 : 54 : 54 : 54 : 54 : 55 : 55 : 55 : 56 : 56 : 57 : 58 : 58 : 58 : 58 : 60: 60: 60: 61: 62: 62: 63: 63: 64: 66: 68: 68: 68: 70: 70: 5 3 5 5 5 4 3 5 5 5 4 4 5 8000 6000 52 00 9220 ... 42: 5 0 43: 2 43: 5 2 44: 45: 2 45: 5 45: 2 46: 0 46: 0 46: 47: 2 47: 48: 0 48: 0 48: 5 0 49: 2 49: 0 49: 2 50 : 2 50 : 5 0 51 : 52 : 0 52 : 2 52 : 0 53 : 2 54 : 0 54 : 0 54 : 0 54 : 2 55 : 10 2 55 : 55 : 56 : ... Conference photo 28 19 29 44 30 57 45 58 20 31 59 32 62 61 33 21 46 60 22 34 47 49 65 36 10 64 23 35 48 63 24 11 37 38 12 50 66 13 39 51 52 25 67 14 40 68 26 53 41 15 54 27 42 16 17 (1) A Ranicki,...
Ngày tải lên: 31/03/2014, 15:06
markov random fields and their applications - kinderman & snell
Ngày tải lên: 31/03/2014, 16:24
mobile genetic elements, protocols and genomic applications
... 79, 4381–43 85 Neumann, R., Rudloff, P., and Eggers, H J (1986) Biotinylated DNA probes: sensitivity and applications Naturwissenschaften 73, 55 3 55 5 10 Pliley, M D., Farmer, J L., and Jeffery, ... effects and in some case even grand-maternal effects (88–92) The Taming of TEs and Their Technical Applications At present a deep and detailed understanding of the complex biology of mobile DNAs and ... Phylogenet Evol 5, 13–17 Kidwell, M G and Lisch, D R (2001) Perspective: transposable elements, parasitic DNA, and genome evolution Evolution Int J Org Evolution 55 , 1–24 14 Miller and Capy 10 Taylor,...
Ngày tải lên: 11/04/2014, 09:51
deterministic global optimization geometric branch-and-bound methods and their applications
... Branch -and- bound Methods and Their Applications, Springer Optimization and Its Applications 63, DOI 10.1007/978-1-4614-1 951 -8_1, © Springer Science+Business Media, LLC 2012 Principles and basic ... Geometric Branch -and- bound Methods and Their Applications, Springer Optimization and Its Applications 63, DOI 10.1007/978-1-4614-1 951 -8_2, © Springer Science+Business Media, LLC 2012 15 16 The geometric ... Geometric Branch -and- bound Methods and Their Applications, Springer Optimization and Its Applications 63, DOI 10.1007/978-1-4614-1 951 -8_3, © Springer Science+Business Media, LLC 2012 25 26 Bounding...
Ngày tải lên: 29/05/2014, 15:25
Novel methods (sonochemistry, microwave dielectric heating, sonoelectrochemistry and RAPET for the fabrication of nanomaterials and their applications
... that determine the particle size in sonoelectrochemistry are temperature, sonication intensity, and the electric pulse width Its main synthetic advantage is the ability to reduce metals for which ... For example, preparing metallic Mg nanoparticles.The last technique was named by us RAPET It stands for Reaction under Autogenic Pressure at Elevated Temperatures RAPET is being used in our laboratory...
Ngày tải lên: 11/06/2014, 12:29
Báo cáo hóa học: " The existence of fixed points for new nonlinear multivalued maps and their applications" potx
... [0, ) and (3.14) implies (3. 15) , and the conclusion of Corollary 3.3 follows from Corollary 3.2 (b) Theorems 3.1-3.4 and Corollaries 3.1 and 3.2 all generalize and improve [5, Theorem 3.4] and ... Theory and Applications 2011, 2011:84 http://www.fixedpointtheoryandapplications.com/content/2011/1/84 Page of 13 m−1 p(xn , xm ) ≤ p(xj , xj+1 ) < αn (3 :5) j=n Since c Î (0,1), limn ®∞ an = and, ... not true; see [5, 19] The following Lemma is essentially proved in [19] See also [5, 8,20,22] He et al Fixed Point Theory and Applications 2011, 2011:84 http://www.fixedpointtheoryandapplications.com/content/2011/1/84...
Ngày tải lên: 20/06/2014, 22:20
Báo cáo hóa học: " Probability inequalities for END sequence and their applications" docx
... nonnegative random variables Stat Probab Lett 53 , 2 35 239 (2001) doi:10.1016/S0167-7 152 (01)00008-6 Shen Journal of Inequalities and Applications 2011, 2011:98 http://www.journalofinequalitiesandapplications.com/content/2011/1/98 ... independent random variables and NOD random variables are END Joag-Dev and Proschan [3] pointed out that NA random variables are NOD Thus, NA random variables are END Since END random variables ... dependent random variables Park J Stat 21(3), 257 –264 (20 05) Asadian, N, Fakoor, V, Bozorgnia, A: Rosenthal’s type inequalities for negatively orthant dependent random variables JIRSS 5( 1-2), 69– 75 (2006)...
Ngày tải lên: 20/06/2014, 22:20
Báo cáo hóa học: " Some new nonlinear integral inequalities and their applications in the qualitative analysis of differential equations" potx
... Zheng and Feng Journal of Inequalities and Applications 2011, 2011:20 http://www.journalofinequalitiesandapplications.com/content/2011/1/20 Page 11 of 15 Then z(x0 , y) ≤ J−1 [v(x0 , y)], (41) and ... dsdt ∈ Dom(Y −1 ), Zheng and Feng Journal of Inequalities and Applications 2011, 2011:20 http://www.journalofinequalitiesandapplications.com/content/2011/1/20 Page 12 of 15 and β(y) u(x, y) ≤ φ −1 ... and the solutions of (46) are global Zheng and Feng Journal of Inequalities and Applications 2011, 2011:20 http://www.journalofinequalitiesandapplications.com/content/2011/1/20 Page 14 of 15...
Ngày tải lên: 21/06/2014, 01:20
Báo cáo hóa học: " Research Article Normality Criteria of Lahiri’s Type and Their Applications" pdf
... 61– 65, 20 05 K S Charak and J Rieppo, “Two normality criteria and the converse of the Bloch principle,” Journal of Mathematical Analysis and Applications, vol 353 , no 1, pp 43–48, 2009 10 J Xu and W ... 3, pp 239– 259 , 1979 16 Journal of Inequalities and Applications 19 X Pang and L Zalcman, “On theorems of Hayman and Clunie,” New Zealand Journal of Mathematics, vol 28, no 1, pp 71– 75, 1999 20 ... with one or two of their derivatives,” Journal of Mathematical Analysis and Applications, vol 223, no 1, pp 88– 95, 1998 25 L.-Z Yang, “Solution of a differential equation and its applications, ” Kodai...
Ngày tải lên: 21/06/2014, 05:20
Báo cáo hóa học: " One-Pot Synthesis of Biocompatible CdSe/CdS Quantum Dots and Their Applications as Fluorescent Biological Labels" doc
... 200703 350 14), Zhejiang Innovation Program for Graduates (2008022), and the foundation of 2008DFR50 250 Author details State Key Lab of Silicon Materials and Department of Materials Science and Engineering, ... emission originating from the band to band of the CdSe/CdS core–shell QDs can be tuned from 53 1 to 59 0 nm by the size of CdSe (Figure 3b) with FWHM of 40–60 nm and a quantum yield of about 30% ... HD, DiSalvo FJ: Chem Mater 20 05, 17 :58 71 15 Orel ZC, Anzlovar A, Drazic G, Zigon M: Cryst Growth Des 2007, 7: 453 16 Feldmann C, Jungk H: Angew Chem Int Ed 2001, 40: 359 17 Yang AY, Wu H, Williams...
Ngày tải lên: 21/06/2014, 08:20
báo cáo hóa học:" Preparation of TiO2 nanotube/nanoparticle composite particles and their applications in dye-sensitized solar cells" doc
... 10 wt.% TNT 0.66 10.41 66.17 4 .57 20 wt.% TNT 0.64 9 .56 66.33 4.07 30 wt.% TNT 0.66 8.30 66.36 3. 65 50 wt.% TNT 0. 65 7.09 67. 65 3. 15 100 wt.% TNT 0.66 5. 65 66 .59 2.49 Voc, open-circuit voltage; ... with a thickness of 12 to 15 µm was deposited onto the pretreated conducting glass using the screen printing technique and sintered again at 450 °C for 15 and at 50 0°C for 15 in air Assembly of the ... the FTO glass and heating at 450 °C for 30 The dye-adsorbed TiO2 electrode and the PT counter electrode were assembled into a sandwich-type cell and sealed with a hot-melt sealant of 50 -µm thick...
Ngày tải lên: 21/06/2014, 17:20