sift algorithm for feature detection and description

... my research and I am grateful to all of them Especially, I would like to sincerely thank my supervisors Prof Ariando and Prof T Venkatesan for educating and encouraging me Prof Ariando keeps me ... (reduced for h at 950 °C and 10-7 Torr vacuum) under zero and a perpendicular T field 87 Figure 3.9 In-plane transverse MR of the reduced STO (reduced for h) at and 10 K up to T The upper and lower ... pressures before and after oxygen-annealing in bar of oxygen gas flow at 600 °C for h (b) PL intensity of the 20 nm amorphous LAO/STO heterostructures fabricated at 10-6 Torr before and after oxygen-annealing...

Ngày tải lên: 10/09/2015, 09:11

... Poisson software for (a) mirror magnetic field, and (b) flat magnetic field are shown in figure The calculation was also performed analytically (Montgomery 1966) using standard relations for calculating ... coils 20 mm, width to be 70 mm and 80 mm for middle and side solenoid coils respectively Three solenoid coils were used to get; (i) mirror field, (ii) flat field, and (iii) off-resonance field configuration ... solenoid coils, thickness of iron jacket, and amp-turns (NI) The optimum values of NI for the side and middle solenoid coils were obtained to be 12950 and 8250 respectively Based on these parameters,...

Ngày tải lên: 22/12/2013, 08:58

... two standard errors b Additional component in electrolytes A-D contains guanidinium thiocyanate (GuNCS, 0.1 M) in a mixture of acetonitrile and valeronitrile (volume ratio 15/1 for A and B, and ... again and then annealed at either 350 or 450 °C for 30 Parts a/c and b/d of Figure show top and side views of SEM images of the TiCl4-treated ATO films (L ) 19 µm) at annealing temperatures 350 and ... Gratzel ¨ and co-workers,21 was designed for both front- and backilluminated NP-DSSC devices The large concentration of I2 and lack of Li+ in electrolyte C lead to the decrease in both JSC and VOC...

Ngày tải lên: 19/03/2014, 16:48

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... Aubonne, Switzerland) with a concentration of 0.5 mmol/L in ethanol for a period of 36 h at room temperature After that time, the TiO2 electrode and counter electrode were sandwiched with an ... converted graphenes, SWNTs, magnesium nitrate, and ethanol were mixed together in an ultrasonicator for several hours The FTO glass (7 Ω·cm-2) and a stainless steel substrate were then immersed...

Ngày tải lên: 20/06/2014, 23:20

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... Aubonne, Switzerland) with a concentration of 0.5 mmol/L in ethanol for a period of 36 h at room temperature After that time, the TiO2 electrode and counter electrode were sandwiched with an ... converted graphenes, SWNTs, magnesium nitrate, and ethanol were mixed together in an ultrasonicator for several hours The FTO glass (7 Ω·cm-2) and a stainless steel substrate were then immersed...

Ngày tải lên: 21/06/2014, 17:20

... Well-defined, uniform, and large-area nanoscaled tips are of great interest for scanning probe microscopy and high-efficiency field emission An ultra-sharp nanotip causes higher electrical field and, hence, ... 1,000 V and measured the emission current Results and discussion The progress of transformation of the tips and photoresist at different etching time is displayed in Table From the eagle-view and ... increased and etched away Therefore, the sidewall of the silicon pillar is pared and transformed into tip (Figure 2b,c,d) Finally, the PR is fully etched away after 10-min etching, and a pyramid-like...

Ngày tải lên: 21/06/2014, 17:20

... thicknesses for the intrinsic aSi:H, µc-Si:H(n) and ZnO:Al are 3, 69 and 142 nm, respectively, for the conductive DBR For the standard case, the thicknesses for a-Si:H(n) and ZnO:Al are 20 and 80 ... substrate and (ii) standard μc-Si:H(n) and ZnO:Al thickness on an Al-coated substrate For the DBR stack, the μc-Si:H(n) and ZnO:Al layer thickness is chosen as 69 nm, and 142 nm respectively For the ... topics, and for providing the funds to present selected research work in reputable local and international conferences, and a chance to meet peers with similar interests in the photovoltaic field For...

Ngày tải lên: 09/09/2015, 11:15

... nm, and (e) λ = 1298 nm) and the dipole resonance ((b) λ = 1233 nm, (d) λ = 1599 nm, and (f) λ = 1887 nm) The lattice constants for nanorod array are 800 nm for (a) and (b), 1100 nm for (c) and ... and (e) λ = 1298 nm) and the dipole resonances ((b) λ = 1233 nm, (d) λ = 1599 nm, and (f) λ = 1887 nm) The lattice constants of the nanorod array are 800 nm for (a) and (b), 1100 nm for (c) and ... life I am grateful for time spent with my roommates and friends, for my backpacking buddies, and for many other people and memories Lastly, I am deeply thankful to my parents for giving birth to...

Ngày tải lên: 09/09/2015, 11:17

... design at core sizes of 24, 28, 32 and 34 µm and a constant gap of µm and (d) Hybrid design at gap sizes of 2, 4, and µm and a constant core size of 32 µm The insert for each image shows the SRR elements ... based terahertz devices outperform their conventional counterparts However, their performance is restricted to a narrow spectral band that is not suitable for the broadband terahertz system due to ... control and manipulate terahertz waves 1.4 Organization of thesis This thesis is directed towards to the design, fabrication, and characterization of terahertz metamaterials in 2D and 3D forms and...

Ngày tải lên: 10/09/2015, 08:40

... film formed on GaN The Ga-ON and Ga-N bond energies are located at 20 and 19.6 eV, respectively (a) Ga-ON peak is observed for the sample without VA and SiH4 treatment, and (b) is absent for the ... and characterized at (c) 300 K and (d) 460 K Similar measurements at (e) 300 K and (f) 460 K were performed for samples which received in situ 300 C vacuum anneal and 400 C SiH4 treatment For ... wafer and Si (111) substrate removal, and BCB stands for benzocyclobutene (c) GaN/AlGaN buffer bonded to a glass wafer (d) Final device structure after releasing the carrier wafer G, S and D stand...

Ngày tải lên: 10/09/2015, 09:11

... carrier drift velocity and mature design and fabrication technology for optical devices Therefore, integration of high performance III-V photodetectors onto the Si platform by flip-chip bonding ... SNDL students for their indispensable help for my research work and for the great academic atmosphere created My deepest love goes out to my parents who have given me their support and encouragement ... transit time  FW HM  d for Si/SiGe and SiGe  buffer are 3084 cm2/Vs and 377 cm2/Vs respectively Inset shows the impulse response under V reverse bias for Si/SiGe and SiGe buffer samples ...

Ngày tải lên: 10/09/2015, 15:47

... R-279-000-140-592, and R-279-000-184-112 Last but not the least, I must express my special thanks to my husband, Feng Zhao, for his unwavering and unconditional love and support My parents and parents’ ... choosing the membrane formation procedures 1.3.2 Membrane formation and modification 1.3.2.1 Membrane formation Membrane structure, another factor determining the membrane performance for specific separation, ... thickness for the fibers heat treated at 200oC for hours before coating……… ….… 168 Fig 7.9 He/N2, O2/N2 selectivity as function of the outer layer thickness for the fibers heat treated at 200oC for...

Ngày tải lên: 12/09/2015, 11:24

... (NPs) and the background film formed by laser annealing 68 Fig 3.11 PL from the background Si NC films before and after laser annealing at a laser fluence of 100 mJ/cm2 (a) PL spectra and (b) ... as-deposited and (b) after thermal annealing in high vacuum for 60 at a temperature of 800 °C 135 Fig 5.6 Optical bandgaps and PL peak energies of the SiOx nanostructured films formed by PLD ... analyzer and a nozzle jet can obtain uniform NCs with little size -9- Chapter 1: Introduction and Literature Survey deviation Thus, PLD is thought to be a matured method and is extensively used to form...

Ngày tải lên: 12/09/2015, 11:25

... mainstream memory technologies include dynamic random-access memory (DRAM), static random-access memory (SRAM), and flash memory (NAND and NOR) DRAM is a random access memory that stores each bit of ... memory stores data, for instance, based on the high- and low- conductivity response to an applied voltage Organic materials are promising candidates for future nano-scale and molecular-scale ... Preparation and Characterization of the PKEu Copolymer 63 3.2.2 Device Fabrication and Characterization 64 3.3 Results and Discussions 65 3.4 Conclusion 77 Reference 78 CHAPTER Material Properties and...

Ngày tải lên: 12/09/2015, 11:29

... field) FIG 3.10 ZFC and FC curves for sample A5 with different fitting fields 74 of 1000 and -2000 Oe before measurements FIG 3.11 (a) ZFC and FC curves at different magnetic fields for sample 76 A4; ... ZFC and FC curves for samples B2 to B5 FIG 5.6 (a) ZFC and FC curves for group A samples at the temperature 155 range from to 200 K at a magnetic field of 20 Oe Inset: ZFC and FC curves for samples ... temperature for sample A4; (c) MR curves for samples A2, A3, A4, and A6 at 4.2 K FIG 3.27 (a) Hall effect for sample A4 at different temperatures; (b) 99 coercivity as a function of temperature for sample...

Ngày tải lên: 12/09/2015, 11:29

... Ervan and Ms Natalia Widjojo for their assistance and generous suggestions; Mdm H J Chiang, Mdm S M Chew and Mr K P Ng from the Department of Chemical and Biomolecular Engineering in NUS for their ... spinneret and elongation flow induced by elongational stress (gravity and drawing force) in the air gap and/ or the coagulant bath, have effects on the polymer molecular chain conformation and induced ... Poisson-Boltzmann equation for ion concentration and electric potential in the radial direction, the Nernst-Planck equation for ionic transport, and the Navier-Stokes equation for the force balance in...

Ngày tải lên: 12/09/2015, 11:29

... µm to µm and the ft ranges from 15 GHz (for µm) to 67 GHz (for sub-micron gate lengths) The highest reported values for ft and fmax are 67 and 140 GHz, respectively [13] Refinements and optimization ... charges bend the band edges and create a triangular potential well in the conduction-band edge of the lower bandgap material, for example, GaN Electrons accumulate in this well and form a sheet charge ... joined together to form a heterojunction, discontinuities in both the conduction and valence band edges occur at the heterointerface For the HEMT, the wide-bandgap material, for example AlGaN,...

Ngày tải lên: 05/10/2015, 22:32

... Leong and Mr Wong Wai Kong for their technical support and help Last but not least, I would also like to thank all those who have helped me in one way or another and whose support and understanding ... paint and bonding was done using a K&S Thermosonic wire bonder Thermosonic bonding uses a combination of ultrasonic energy, temperature and pressure to form the bonds and for this project, ball-andwedge ... studied for copper and aluminum Different types of lateral spin valve geometries were fabricated and characterized and an optimum geometry which showed good switching characteristics and large...

Ngày tải lên: 05/10/2015, 22:32

... Acknowledgements First and foremost, I thank my supervisor, A/Prof Liu Xiang Yang and co-supervisor, A/Prof Ji Wei, and Dr Zhang Keqin for their invaluable guidance and advice throughout my entire candidature ... [35] B T Holland, C F Blanford, and A Stein, Science 281, 538-540 (1998) [36] B T Holland, C F Blanford, T Do, and A Stein, Chem Mater 11, 795-805 (1999) [37] J E G J Wijnhoven and W L Vos, Science ... the other hand, it is on the order of wavelength of the relevant electromagnetic waves for the photonic crystals For example, it is about µm or less for visible light, and is about mm for microwaves...

Ngày tải lên: 05/10/2015, 22:32

... Chen Chen, Shikha Jain and Verma, Lalit Kumar for their support and companionship Most of all she would like to thank her beloved parents and sisters, her uncle’s family for their love, undying ... chemical and physical properties of AZ 7220 photoresist series 31 The summary for the materials used in this fabrication and properties 39 The parameters for the deposition of Co, Cu, Al and NiFe ... correlated by the (a) FM and (b) AFM exchange coupling 15 Fig 3.1 Mask used for deposition of materials for planar hall device 19 Fig 3.2 Mask used for deposition of contact pads for device 20 Fig 3.3...

Ngày tải lên: 05/10/2015, 22:32