robustness enhancement of composite building with belt truss system

... milling with the ion energy of ~3 KeV The gains of all the possible impurity elements are within the noise level of SIMS 172 Figure 5.28 XPS spectra of the characteristic peak regions of ... depletion of quasi-conduction band (QCB) consisting of a wide range of defects states in LAO The stable metallic state can be obtained only when the filling level of QCB inside the LAO aligns with ... with the Fermi level of NSTO such that the wave functions of electrons inside the QCB and the conduction band of NSTO can overlap and interact with each other The implications of this mechanism...

Ngày tải lên: 10/09/2015, 09:11

... agree within 3% The electromagnets were characterized for 45 A to 75 A at steps of A The variation of magnetic field with solenoid current is shown in figure It is observed to be linear with a ... current of 2·5 mA was extracted, with two-electrode extraction geometry, at 15 keV beam energy Design, fabrication, and characterization of a solenoid system 467 Figure The variation of the magnetic ... resistance of the solenoid coils were measured using precision LCR meter (Model:PM6306, Design, fabrication, and characterization of a solenoid system 465 Figure The cross-sectional view of the integrated...

Ngày tải lên: 22/12/2013, 08:58

... with anodization for various durations Figure shows the variation of length of TiO2 NT as a function of period of anodization (the corresponding SEM images of each datum showing the lengths of ... a systematic variation of the photovoltaic performance of the NTDSSC devices as a function of tube length After the ATO films were treated with TiCl4 and annealed in two steps, we found that, with ... performance of NT-DSSC devices on length 3.2 Photovoltaic Performance of the Devices with NT Arrays of Varied Lengths The ability of the N3 dye chemisorbed on ATO films was examined with absorption...

Ngày tải lên: 19/03/2014, 16:48

... J-V characteristics of DSSCs with different counter electrodes (a) Graphenes (b) SWNTs (c) Graphene-SWNT composites Table Experimental data of DSSCs with counter electrodes of differential carbon-based ... electrodes with three different carbon-based materials with the objective of evaluating the electrochemical properties of the counter electrodes and the energy conversion efficiencies of cells ... Graphene-SWNT compositedeposited FTO substrate composite electrode (c) showed the simultaneous presence of graphene wrinkles and SWNTs The optical transmittance of the graphene, SWNT, and carbon composite...

Ngày tải lên: 20/06/2014, 23:20

... J-V characteristics of DSSCs with different counter electrodes (a) Graphenes (b) SWNTs (c) Graphene-SWNT composites Table Experimental data of DSSCs with counter electrodes of differential carbon-based ... electrodes with three different carbon-based materials with the objective of evaluating the electrochemical properties of the counter electrodes and the energy conversion efficiencies of cells ... Graphene-SWNT compositedeposited FTO substrate composite electrode (c) showed the simultaneous presence of graphene wrinkles and SWNTs The optical transmittance of the graphene, SWNT, and carbon composite...

Ngày tải lên: 21/06/2014, 17:20

... field and tunneled through the surface of the tip array This technique is a potential method for the manufacture of high-quality display with features of thin panel thickness, wide view angle, ... the point of view of etch probability Based on the observation results in Table 1, we propose a formation model of the ultra-sharp nanotip array Figure shows the schematic representation of nanotip ... characteristics of nanotips were measured at room temperature Figure 3a shows the typical FE curves of the pyramid-like tip and sharpened nanotip Inset of Figure 3a displays the real-time SEM images of the...

Ngày tải lên: 21/06/2014, 17:20

... consists of alternating layers of two materials with different dielectric constants, with a period a From Ref [70] 27 To realise the DBR, periodic stacks of two layers (DBR unit blocks) with different ... properties of the c-Si wafer and of the a-Si and µc-Si thin-film layers, based on [127] as well as on the fitting of the lifetime samples of Figure 4.4 The activation energy (i.e position of the ... Schematic of a one-dimensional photonic crystal (‘distributed Bragg reflector’, DBR) The DBR consists of several DBR unit blocks Each DBR unit block consists of alternating layers of two materials with...

Ngày tải lên: 09/09/2015, 11:15

... image of coupled gold nanoantennas with the dimension of 500× 100× 50 nm and a gap of 40 nm [28] (b) The intensity enhancement as a function of the gap ranging from 16 to 406 nm SEM image of bow-tie ... image of Ag0.5/Au0.5 is inserted in the bottom-left of the plot (a) with the scale bar of 500 nm 100 Figure 5.1 Schematic diagram of a periodic array of nanorods on glass substrate An array of nanorods ... image of coupled gold nanoantennas with the dimension of 500× 100× nm3 50 and a gap of 40 nm [28] (b) The intensity enhancement as a function of the gap ranging from 16 to 406 nm SEM image of bow-tie...

Ngày tải lên: 09/09/2015, 11:17

... development Two pieces of MLA were used in the laser MLA lithography One is with the period of 75 μm and the other with the period of 100 μm The radius of curvature (ROC) of the MLA depends on ... metamaterials with the feature size of 400 nm and 1.8 μm, respectively The difference of these two pieces of MLA is the line width of the fabricated structures For the one with the period of 75 μm, ... properties of metamaterials 2.3.1 Resonance properties of single SRR Split ring resonator (SRR) is one of the typical designs of terahertz metamaterials, which consists of the metallic ring with a...

Ngày tải lên: 10/09/2015, 08:40

... 3.17 Plot of Ion/Ioff ratio as a function of gate leakage current IG for the AlGaN/GaN MOS-HEMTs with and without in situ VA and SiH4 treatment The number of the measured devices with and without ... compared with those of state -of- the-art AlGaN/GaN MOSHEMTs (b) Breakdown voltage VBR versus gate-to-drain spacing LGD of the fabricated AlGaN/GaN MOS-HEMTs, as compared with those of state -of- the-art ... of gate voltage VG of the AlGaN/GaN MOS-HEMTs with and without in situ VA and SiH4 treatment JG of the device with in situ VA and SiH4 treatment is suppressed by ~ orders of magnitude at VG =...

Ngày tải lên: 10/09/2015, 09:11

... showed that with an increase of the input power of about 20% in comparison with photodetector without dark current, a photodetector with 300 µA dark current is still able to ensure a BER of 10-18 ... 6.4: ID-VD curve of Ge JFET with and without illumination Inset shows the band diagram of Ge gate on Si channe 93 Fig 6.5: Ion/Ioff ratio versus laser power in comparison with the prior ... emission model with E0.68 dependency 63 Fig 4.8: Schematic of responsivity measurement 64 Fig 4.9: Plot of responsivity of LPD and VPD as a function of reverse bias...

Ngày tải lên: 10/09/2015, 15:47

... morphology of different skins of the dual-layer hollow fibers 101 Fig 4.8 The SEM images of the outer skin of the inner layer (PES) of dual-layer hollow fibers spun with an air gap of 1.5 ... Methanol system (a) and NMP, Matrimid, Ethanol system (b) …………………………… ……….… 92 Fig 4.3 The SEM images of the cross-section morphology of dual-layer hollow fibers spun with an air gap of 1.5cm: ... Thickness of a membrane selective layer (cm) l Effective length of the modules (cm), lI Void thickness of the inferface voids of mixed matrix membrane (Å) lφ Thickness of rigidified region of mixed...

Ngày tải lên: 12/09/2015, 11:24

... Thus, blueshift of the PL with decreasing NC size is a direct evidence of QCE [16] Proponents of the surface state model often attack the QCE model using the observed PL changes with different ... characterization of Si NCs deposited on a graphite (HOPG) substrate in mTorr Ar gas with a laser fluence of 3.0 J/cm2 (a) AFM image of isolated Si NCs, (b) section analysis of the AFM image over ... biomedicine In the size regime of nanometers, the structure and properties of Si NCs differ dramatically from those of the bulk The area of Si NCs is currently one of the most active frontiers...

Ngày tải lên: 12/09/2015, 11:25

... supports and understanding over the years I TABLE OF CONTENTS Page ACKNOWLEDGEMENTS TABLE OF CONTENTS ABSTRACT LIST OF TABLES LIST OF FIGURES LIST OF SYMBOLS CHAPTER Introduction I II VI VIII IX ... Polymers 28 1.6.2.4 Composite Materials 29 1.7 Motivation of Study Reference 29 31 CHAPTER Synthesis and WORM Memory Properties of a Conjugated Copolymer of Fluorene and Benzoate with Chelated Europium ... characteristics of the pulse used for the tests 51 Figure 2.9: Stability of the Al/PF8Eu/ITO device in either ON- or OFF-state under a constant stress of V 52 Figure 2.10: Cyclic voltammetry (CyV) of a...

Ngày tải lên: 12/09/2015, 11:29

... fabrication process of Fe3O4 36 nanowires FIG 2.6 FIB images of Fe3O4 nanoconstrictions with a width of (a) 150 36 nm and (b) 80 nm, and a length of µm FIG 2.7 XRD pattern of Fe3O4 thin films ... etching with a nanoconstriction of xiii 44 List of figures 80 nm FIG 2.16 Dependence of R H / R0 at various temperatures of a Fe3O4 45 nanowire FIG 2.17 Temperature-dependent MR ratios of a nanowire ... 2.9 ZFC and FC curves of Fe3O4 thin films with an applied 39 magnetic filed of 100 Oe The direction of the magnetic field is along the sample plane FIG 2.10 M-H curves of Fe3O4 thin films at...

Ngày tải lên: 12/09/2015, 11:29

... combinations of dielectric and Donnan exclusions, with different extents of contribution of each of them, may explain qualitatively the dependencies of salt rejections on the salt valence type observed with ... Calculation of Shear Rates and Shear Stresses within Spinneret 186 vi Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes WANG KAI YU Summary Effects of flow angle within ... and Applications of Nanofiltration Membranes 15 1.2.1 Nanofiltration separation mechanisms 18 1.2.2 Nanofiltration separation models 22 1.2.3 Fabrication of nanofiltration membranes...

Ngày tải lên: 12/09/2015, 11:29

... a It contains six atoms of each type and consists of two interpenetrating Hexagonal Close Packed sublattices, each with one type of atom, offset along the c axis by 5/8 of the cell height The ... control of the etch process We have also determined that with RIE power of 30W and ICP power of 250W, AlGaN has an etch rate of approximately 21.27 nm/min Figure 3.3 shows the IV characteristics of ... designing of a set of photomask for high frequency and high power measurements With the importance of simulation as mentioned earlier, we shall extend our study into the potential of AlGaN/GaN...

Ngày tải lên: 05/10/2015, 22:32

... Figure 3.20 SEM image of die after encapsulation with 90nm oxide 41 Figure 3.21 Schematic diagram of electron-sample interaction 42 Figure 4.1 SEM images of the two different kinds of lateral spin ... shows the main program window of the software 30 Chapter Three: Fabrication and characterization of lateral spin valves Figure 3.7 Main program window of ELPHY software In order to align the ... understanding have helped me throughout this project i TABLE OF CONTENTS Acknowledgements i Table of contents ii Abstract vi List of Figures viii List of symbols and abbreviations xiii Chapter Introduction...

Ngày tải lên: 05/10/2015, 22:32

... images of the colloidal crystal of silica spheres with diameter of 0.97µm and 0.33µm, respectively The crystals also had a structure of fcc lattice with (111) plane parallel to the surfaces of substrates ... that the number of layers of colloidal 35 crystals was increased with increasing the concentration of suspension within the limitation of 10% by weight 2.3 Optical Characterization of Colloidal ... the gap increases with the increase of disorder On the other hand, the presence of defects leads to exponential decay of light with thickness not only within the former gap of the periodic structure,...

Ngày tải lên: 05/10/2015, 22:32

... direction of magnetization in each magnetic layer The resolution of the angle of the direction of magnetization with respect to the direction of the sense current of PHE is twice better than that of ... Comparison of PHE and MR as a Function of Field Orientation iii Table of contents 4.6 4.7 4.5.2: PHE voltages as a function of orientation of applied field 60 4.5.3: AMR voltages as a function of orientation ... another i Table of contents TABLE OF CONTENTS ACKNOWLEDGEMENTS i TABLE OF CONTENTS ii SUMMARY v MAJOR SYMBOLS AND ABBREVIATION vii LIST OF FIGURES ix LIST OF TABLES xii LIST OF PUBLICATIONS xiii...

Ngày tải lên: 05/10/2015, 22:32