... out of different combinations of types, number, and grading of functioning anchor points, and further work is needed to determine the optimal reliability, validity, sensitivity and generic properties ... measures of functioning [10], this Page of 11 suggests that GAF-S and GAF-F represent different aspects of a patient's condition Few studies have focused on concurrent validity of GAF-S and GAF-F ... the problem, informing the reader of the status of current Page of 11 research, identifying gaps and suggesting the next step [89] An encompassing hand search of literature was conducted because...
Ngày tải lên: 08/08/2014, 23:21
... or K+ ions A number of isoforms of the a and b subunits has been isolated from various tissues of numerous species, and it has been repeatedly demonstrated that the function of Na+/ K+-ATPase requires ... groups of Val304, Ala305, and Ile307 (M4) and through the side-chain oxygen atoms of Asn796 and Asp800 (M6) and Glu309 (M4) [26] A similar situation could be assumed for the coordination of cations ... distributed isoform, there is the b2 isoform that is found in excitable tissues (muscle and nervous tissue), the b3 in testes, adrenal, and brain, and the bm in skeletal and heart muscle In view of the...
Ngày tải lên: 24/03/2014, 00:21
Báo cáo Y học: Isolation, enzymatic properties, and mode of action of an exo-1,3-b-glucanase from Trichoderma viride doc
... hydrolysis of 1,3-b-oligoglucosides, the subsite theory of Hiromi [46,47] was employed for construction of a subsite map for the estimation of affinities and number of subsites in the active center of ... Km and Vmax for hydrolysis of G6G are similar to those of G3G (Tables and 4) Therefore, it may be assumed that the enzyme has a mixed mode of action towards laminarins and that it is capable of ... purity of b-oligoglucosides was analyzed by TLC and 1H and 13C NMR spectroscopy as described below Published values for 1H and 13C chemical shifts of b-oligosaccharides with different DP and linkage...
Ngày tải lên: 24/03/2014, 04:21
Properties and Applications of Silicon Carbide Part 1 pdf
... by Use of Nickel and Tantalum from a Materials Science Point of View 171 Yu Cao and Lars Nyborg Other applications: Electrical, Structural and Biomedical 195 Properties and Applications of Ceramic ... Properties and Applications of Silicon Carbide Illumination of the samples with interband light of wavelength 365 nm gives rise to trapping of non-equilibrium charge carriers into the donor and ... the PVT method at the Cree Research Inc and Bandgap Technologies Inc., respectively, by EPR and photo-EPR methods The nature of PR of the photo-response and of PPC in HPSI 4H-SiC material was studied...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 2 pptx
... instant of time The value of the first derivative was calculated as the right-hand side of rate equations (3), and that of the second derivative, as the derivative of the righthand side of Eqs ... the charge states of ISi and IC in 4H-SiC are the same as those in 3C-SiC, the ranges of m and n in Eqs (1a) and (2a) are limited to m ∈ {0, 1, 2, 3, and 4} and n ∈ {0, ±1, and ±2} Boron diffusion ... randomly scattered and channeled components of the profile, and D1 and D2 are the doses represented by each Pearson function For Pearson IV functions, K1 and K2 are normalized constants Rp1 and...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 3 doc
... involves first Step (A) and then the repetition of Steps (B) and (C) Figure is the process for low temperature deposition and evaluation of the film, consisting of Steps (A), (D) and (E) Step (D) is ... mechanism of SiC by comparing it with that of Si 78 Properties and Applications of Silicon Carbide Experimental procedure ¯ 4H-SiC (0001) C-face and (0001) Si-face epitaxial layers with 8◦ off-angles ... reported by Liu and Sturm (Liu and Sturm, 1997) The gas concentrations of monomethylsilane and hydrogen chloride are 2.5% and 5%, respectively, in hydrogen gas at the flow rate of slm In Figure...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 4 pot
... magnetic semiconductors, including a family of III-nitrides and ZnO, had spun a great deal of interest to magnetic properties of these materials The resulting 90 Properties and Applications of Silicon ... FM- and AFM-ordered supercells containing a pair of TM 104 Properties and Applications of Silicon Carbide atoms This is the amount of energy needed to flip the spin of one of these atoms and ... directions of their magnetic moments (a) (b) (c) Fig Supercells of TM-doped (a) 3C-SiC and (b) 4H-SiC, and (c) in-plane TM atom placement used in the calculations of magnetic moments and properties of...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 5 docx
... features of the equation of state of solids J Phys.: Condens Matter, 1, pp 1941-1963 Wang, W.; Takano, F.; Akinaga, H & Ofuchi, H (2007) Structural, magnetic, and magnetotransport properties of Mn-Si ... and S , i.e μ+ (s j ) μ (s j ) The h h (2) (2) magnitude H0 is the Hankel function of the zeroth order and of the second kind, H1 is SiC SiC the Hankel function of the first order and of ... thermal properties of glasses and spin glasses Philos Mag., 25, pp 1-9 Bechstedt, F.; Käckell, P.; Zywietz, A.; Karch, K.; Adolph, B.; Tenelsen, K & Furthmüller, J (1997) Polytypism and Properties of...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 6 ppt
... characterization of chemical and biological agents and materials, remote and standoff early-warning for chemicalbiological warfare threats, and imaging of concealed weapons and explosives, just ... enhancement of the leakage current under optical illumination of the devices is manifested as the lowering of Mn,p In order to assess the role of leakage currents in controlling the dynamic properties of ... applications because of its distinct properties, the possibility of easy growth on a native oxide, and the presence of numerous polytypes [1-4] Silicon carbide is made up of equal parts silicon and carbon...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 7 potx
... time (min) Fig Depth profiles of a) NiSi2; b) NiSi and c) Ni2Si derived from successive ion etchings and analysis of the Si 2p and Ni 2p3/2 levels in XPS The content of C, O and Si from the surface ... formation of alternating Ni-silicide and C layers The systems which show the tendency of the formation of periodic bands have relatively large parabolic rate constant k and k0 values (intercept of the ... silicides and controls the rate of Ni2Si formation in the second reaction stage As a result of fast dissociation of SiC and enhanced diffusion of Ni, Ni2Si is formed quicker under the action of argon...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 8 potx
... percolation of the filler particles and the fractal nature of filler distribution in non- 204 Properties and Applications of Silicon Carbide whisker particulate composites and related it to the ac and ... whisker defects Many of these will be considered in this section, and a discussion of interface effects and SiCw defects is given in Section 3.8 Properties of the Al2O3 and sintering additives ... breakage of interatomic bonds and frictional sliding also increase the work of fracture 210 Properties and Applications of Silicon Carbide One study (Iio et al., 1989) showed that the inclusion of...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 9 pptx
... active oxidation of SiC and contemporary partial evaporation of SiO2 240 Properties and Applications of Silicon Carbide a b Fig SEM micrographs of a) cross-section and b) surface of the sample ... flow and the evolution of the ratio IO/IAr, where IO and IAr are the intensities of oxygen and argon emission spectral lines respectively, is measured along the 242 Properties and Applications of ... production of dense materials by mean of pressure assisted sintering, and to investigate the influence of a variety of additives, including carbon and silicon carbide, on the processing and oxidation...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 10 pot
... (b) Fig 10 Waveforms of the leakage current (blue) and of the applied voltage (yellow), (a) CT in the position and (b) CT in the position 272 Properties and Applications of Silicon Carbide The ... manufacturers A and C, respectively As a general conclusion, it was observed that the surge arresters of manufacturers A and C presented evidence of ingress of moisture and signs of discharges ... moisture and (d) gap electrode: signs of discharge 270 Properties and Applications of Silicon Carbide (a) (b) (c) (d) Fig Surge arresters of manufacturer C, (a) block surface: presence of moisture,...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 11 ppt
... electronic properties of the surface need a careful selection of process parameters The electronic band gap is mainly influenced by two physical effects; on the one hand, the band gap of all semiconductors ... fills most of the wood channels The diversity of wood species, including soft and hard, provides a wide choice of materials, in which the density and the anisotropy are the critical factors of the ... human fibroblasts and osteoblasts (Naji and Harmand, 1991) and open porosity of these materials make them great candidates for biomedical applications Biomedical applications of SiC Silicon carbides...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 12 doc
... coating of a silicon carbide stent and a long-term release of the desired agent, PLA and PLGA are biocompatible materials useful for a variety of applications, including the design and properties of ... NCLP profiles were obtained for each surface over a distance of 3.094 mm with a lateral resolution of 1àm using a Gaussian filter and an attenuation factor of 60% at a cut-off wavelength of 0.59 ... A (2003) Sintering of silicon carbide Effect of carbon Ceram Int., 29, 28792 Stutzmann, M.; Garrido, J.A.; Eickhoff, M & Bandt, M.S (2006) Direct biofunctionalization of semiconductors: A survey...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 13 doc
... et al, 1993) The band gap of Si, GaAs and of 6H-SiC are about to 1.1 eV, 1.4 eV and 2.86 respectively We found a compilation of properties of: Silicon, GaAs, 3C-SiC (cubic) and 6H-SiC (alpha) ... different silicon and carbon precursors and they presented a maximum density of 1.86 g /cm3 370 Properties and Applications of Silicon Carbide The porosity of these gels is the result of solvents, ... different excitation and emission spectra, targeting to the endoplasmic reticulum (ER) and mitochondria and understanding the morphology and dynamics of the plant secretory pathway (Brandizzi et al.,...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 14 doc
... of one or another approach depends on the desired product properties, e.g purity, particle size distribution and morphology, yield and cost considerations To 392 Properties and Applications of ... 329 Wang G., Krstic V., (2003), Effect of Y2O3 and total oxide addition on mechanical properties of pressureless sintered β-SiC, Journal of Materials Science and Technolology, 19(3), pp: 193-196 ... permittivity of nano SiC particles doped with nitrogen, Journal of Alloys and Compounds, 490, pp: 190–194 Zhao D., Zhao H., Zhou W., (2001), Dielectric properties of nano Si/C/N composite powder and nano...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 16 ppt
... determined SiC and Si3N4 would selectively equilibrate with these three phases in the order of M < K < J < Y2O3 with respect to the effects of the oxygen content of SiC and Si3N4 powders and the oxygen ... temperature and a coarse surface of ceramic caused by vaporized gases from the reaction of SiO2 and Al2O3-Y2O3 Also in this system the intermediate compositions can offer sufficient amount of liquid ... behavior of liquid phase sintered SiC with AlN and Re2O3 (La2O3, Nd2O3 , Y2O3) additive system and their mechanical property in both pressureless sintering and hot press sintering 458 Properties and...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 17 ppt
... Influence of number of passes and standoff distance on kerf generation (α = 900) b) Influence of SOD on characteristics of kerf generated in double pass Furthermore, the actual standoff distance ... 100 mm/min) and higher (v = 900 mm/min) levels of feed rate Examination of the influence of number of passes on jet footprint generation: To understand the influence of number of passes on ... profiles, the real stand-off distance (D) increases considerably (40%) with the increase of jet dwell time (decrease of vf) Therefore, the bottom of the kerf is situated at larger values of stand-off...
Ngày tải lên: 20/06/2014, 04:20
Properties and Applications of Silicon Carbide Part 18 pptx
... effect on the DBT of the material and evaluating the thermal softening and relative hardness as a result of irradiation of the laser beam at a constant cutting speed The effects of laser heating ... compatibility of the software (AdvantEdge from Third Wave Systems) with the desired laser heating and thermal softening effect (Virkar & Patten, 2009); i.e., a proof of concept A new and more accurate ... the software can be used to predict the forces and 516 Properties and Applications of Silicon Carbide pressures generated by the tool-chip interaction for a given set of process conditions and...
Ngày tải lên: 20/06/2014, 04:20