ingan ingan and ingan gan quantum well laser diode
Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 1
Ngày tải lên :
14/09/2015, 14:02
... techniques as well as the major properties of the InGaN quantum structures, including InGaN/ GaN quantum wells and InGaN quantum dots 1.3 InGaN/ GaN quantum wells and quantum dots InGaN is an important ... comprising of quantum wells and quantum dots, were used as the active region of the saturable absorbers The nonlinear transmittance properties of InGaN/ GaN quantum wells were studied The quantum wells ... intensity of the InGaN/ GaN quantum wells is not significantly dependent on the dislocation density As a result, high brightness LEDs and continuous-wave blue-violet LDs based on InGaN quantum well structures...
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Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 2
Ngày tải lên :
14/09/2015, 14:02
... accurate thickness and composition control in the growth of GaN- based quantum wells and quantum dots can be effectively achieved through the careful control of the flow rate, temperature and the pressure ... especially at the wavelengths beyond μm In this work, the linear reflectance and transmission spectra of the InGaN/ GaN quantum wells and the SESAM structures were obtained at room temperature using a Shimadzu ... band-to-band transition, which occurs between the states in the conduction and valence bands, with the energy difference known as the bandgap When working with a new compound semiconductor, bandgap...
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Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 3
Ngày tải lên :
14/09/2015, 14:02
... comparison between the InGaN/ GaN quantum well and quantum dot saturable absorbers will be presented 79 Chapter 3.1 Saturable Absorbers with GaN- based Quantum Structures InGaN/ GaN quantum well saturable ... V-pits on the morphological and optical properties of InGaN/ GaN quantum wells Finally, in Section 3.4, the InGaN/ GaN quantum dot saturable absorber will be fabricated and its nonlinear property ... time of the InGaN/ GaN quantum well saturable absorber will be presented in Section 3.2 With this method, InGaN/ GaN MQW samples with reduced GaN buffer thicknesses were fabricated, and the absorption...
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Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 4
Ngày tải lên :
14/09/2015, 14:02
... passive mode-locking and short pulse generation 4.6 Chapter summary In this chapter, a GaN- based SESAM was fabricated using an InGaN/ GaN quantum well saturable absorber The DBR and AR coatings were ... the strong band-to-band absorption in GaN The bandedge of GaN is located at ~ 363 nm Figure 4.13 Reflectance spectrum from the GaN- based SESAM sketched in Fig 4.12 4.5 Drawbacks of the GaN- based ... of GaN- based SESAM monolithically fabricating broadband high-reflective GaN- based DBRs, due to the lack of suitable semiconductor DBR materials lattice matched to GaN Though GaN/ AlN and AlN/AlGaN...
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Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 5
Ngày tải lên :
14/09/2015, 14:02
... modifications on the emission from the InGaN/ GaN quantum wells was studied by a micro-PL system at room temperature, and the samples were excited by a 325-nm He-Cd laser Figure 5.9 shows the room temperature ... after laser lift-off (measured from the GaN buffer side), and the SESAM after ICP etching (measured from the etched GaN side) As shown in Fig 5.7, after laser lift-off, the reflection from GaN ... form the barrier for the InGaN/ GaN QW Based on the above, we can reduce the reflectance fluctuations within the stopband by removing the sapphire substrate and thinning the GaN buffer But then the...
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Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 6
Ngày tải lên :
14/09/2015, 14:02
... understanding of the properties of InGaN/ GaN quantum well saturable absorbers in terms of the relationships between crystal quality, absorption recovery time and nonlinear property GaN- based quantum ... structures, comprising of quantum wells and quantum dots, operating in the blue wavelength region were investigated For InGaN/ GaN quantum well saturable absorbers, a novel and convenient method to reduce ... and recovery time results of the InGaN/ GaN quantum well saturable absorbers fabricated by different methods should be studied and compared 178 Chapter Conclusions and Suggested Future Work with...
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Báo cáo hóa học: " Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy" docx
Ngày tải lên :
21/06/2014, 05:20
... various freestanding GaN gratings are fabricated on a GaN- on-silicon substrate by a combination of EB lithography, FAB etching of GaN and DRIE of silicon The patterned growth of InGaN/ GaN QWs is ... high-temperature GaN layer, six-pair 3-nm InGaN/ 9-nm GaN QWs layer and 10-nm GaN top layer The growth process is described below The patterned template is put into a high vacuum chamber and cleaned ... http://www.nanoscalereslett.com/content/6/1/117 PL Intensity (a.u.) PL Intensity (a.u.) InGaN/ GaN QWs slab InGaN/ GaN QWs on Si 4000 2000 300 8000 5000 (a) 400 500 600 (c) 6000 4000 2000 Period P-Width...
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GaN-Based Laser Diodes Towards Longer Wavelengths and Short Pulses pdf
Ngày tải lên :
22/03/2014, 15:20
... are prototype laser diodes grown on freestanding GaN substrates at OSRAM Opto Semiconductors [1, 2, 3] by MOVPE They have a multi -quantum- well active region with thin InGaN quantum wells (QW thickness ... bound states in the quantum wells and propagating carriers have to be calculated [15] Figure 2.6 shows the conduction band profile of a violet laser diode with two quantum wells and an Al0.15 Ga0.85 ... waveguides and structures that confine the charge carriers, such as quantum wells Within certain limitations, the ternary alloys AlGaN, AlInN and InGaN fulfill this requirement Their bandgap and refractive...
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Báo cáo hóa học: " Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain" potx
Ngày tải lên :
21/06/2014, 05:20
... effects on the band structure especially for highly strained quantum wells [18] The strain will couple the heavy-hole (hh) bands, light-hole (lh) bands with spin-orbit split-off (SO) band [18] Therefore, ... 2.93 for GaAs, and g = 21.0, g = 8.3, g = 9.2 for InAs The band-offset is taken as Qc = 0.64 [20], and the strain-free InxGa1-xAs band gap at 80 and 300 K are taken from Refs [20] and [21], respectively ... symmetric square well changes into an asymmetric well, which will change the parities of the subband wave functions Besides, it will also couples the 1L and the 2H subbands, and as a result,...
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ELECTRON MOBILITY IN AN UNINTENTIONALLY DOPED gan algan SURFACE QUANTUM WELL
Ngày tải lên :
30/10/2015, 19:39
... ELECTRON GAS IN UID GaN/ AlGaN SFQW In what follow, we will be dealing with a UID GaN/ AlGaN SFQW The crystal reference system is that the z axis is directed from vacuum to the well, and z = defines ... strain fluctuations give rise to random nonuniform shifts of band edges of the conduction and valence bands This implies that electrons in the conduction band and holes in the valence one must ... interface viz the well width L is not constant Therefore, the 2DEG in the lowest subband of a GaN/ AlGaN SFQW is described by a modified Fang-Howard wave function, proposed by Ando [11, 12]: ...
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Pin mặt trời sử dụng công nghệ giếng lượng tử ( quantum well solar cell)
Ngày tải lên :
06/12/2012, 08:28
... 800 900 900 Reflectivity (%) Internal quantum efficiency (%) 100 100 0 1000 1000 Wavelength (nm) Wavelength (nm) [3] D.C Johnson et al Solar Energy Materials and Solar Cells, 2005 Giải thích MQW...
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clayton - mind and emergence - from quantum to consciousness (oxford, 2004)
Ngày tải lên :
03/04/2014, 12:06
... and Heinz-Dieter Heckmann (eds.), Physicalism and Mental Causation: The Metaphysics of Mind and Action (Exeter: Imprint Academic, 2003) and Carl Gillett and Barry Loewer (eds.), Physicalism and ... ‘Physicalism and Panentheism: Good News and Bad News’, Faith and Philosophy, 20/1 (Jan 2003), 1–21 47 Alexander, Space, Time, and Deity, ii 45 He also writes, ‘The [emergent] quality and the constellation ... doctrine of novelty [became] widely known and made its way into England, where by a similar reaction against the mechanistic evolution theory, Alexander and Morgan became its most influential champions...
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SYNTHESIS OF CDTE AND PBS SEMICONDUCTOR QUANTUM DOTS AND
Ngày tải lên :
28/04/2014, 15:48
... vibrational level in the excited state as well as the lower energy (e.g ground) states Both organic and inorganic luminescent quantum dots exhibit Stokes shift In organic quantum dots, this relaxation process ... ligands Organic molecules however are distorted in shape and, as a result, coverage of surface atoms with the organic capping molecules may be sterically hindered Besides, the organic capped quantum ... Thank you for your understanding and the courage you have given me April 22, 2010 iii ABSTRACT SYNTHESIS OF CDTE AND PBS SEMICONDUCTOR QUANTUM DOTS AND THEIR BIOLOGICAL AND PHOTOCHEMICAL APPLICATIONS...
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quantum theory - the church-turing principle and the universal quantum computer
Ngày tải lên :
29/04/2014, 14:54
... measure y in random direction % if V n; y 6= V n; x % and x in the parallel direction % then print(( Quantum theory refuted.”)) else print(( Quantum theory corroborated.”)) fi end Quantum computers ... given once and for all, and programming it must consist entirely of preparing it in a suitable state (or mixed case) Albert (1983) has described a quantum mechanical measurement ‘automaton’ and has ... and then executing j i This establishes the sense in which Q is a universal quantum computer It can simulate with arbitrary precision any other quantum computer Q U+ ; U, For although a quantum...
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molecular dynamics simulation of thermal and thermomechanical phenomena in picosecond laser material interaction
Ngày tải lên :
06/05/2014, 08:54
... dynamics simulation on ultrafast laser ablation of metal, in: The International Congress on Applications of Lasers and Electro-Optics, Laser Institute of America, Orlando, 1999, pp 219–228 [11] J.I ... be handled by the authors’ computer resource in terms of suppressing the statistical uncertainty and revealing macro-scale phenomena in laser ablation This work emphasizes the evolution and propagation ... temperature and thermomechanical waves during and after laser heating For the first time, the thermal–mechanical coupling is studied in detail, which has a strong impact on the temperature distribution and...
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fundamental and application of high precision laser micro bending
Ngày tải lên :
06/05/2014, 08:55
... laser and a W CW fiber laser are used The operation parameters of these two lasers are summarized in Table Laser wavelength Laser pulse full width Laser pulse repetition Laser maximum power Laser ... the pulsed laser and the CW laser The laser beam diameter of the CW laser is 40 ? m At these laser powers, melting does not occur Compared with the pulsed laser bending of ceramics and silicon, ... velocity (a) pulsed laser, 1.1 W, (b) CW laser, 5.0 W pulsed laser and CW laser bending are compared As expected, the bending angle increases when the input laser power increases, and decreases with...
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highly efficient blue organic light emitting diodes using quantum well like
Ngày tải lên :
06/05/2014, 08:55
... materials HOMO and LUMO difference of DPVBi, BAlq, AND, and BAlq was 0, 0.1, 0.3, and 0.3 eV, respectively This HOMO and LUMO level difference is not enough to confine charges and excitons in ... multiple ‐ quantum well and its use for electroluminescent diode Appl Phys Lett 1993, 62:3250 19 Qiu Y, Gao Y, Wang L, Wei P, Duan L, Zhang D, Dong G: High-efficiency organic light-emitting diodes ... of well structure on efficiency of organic light-emitting diodes Acta Phys Sin 2010, 59:8093 23 Jian Z, Juan G, Zhuo G, Ke D, Jiule C: An organic light-emitting device with ultrathin quantum- well...
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