in parallel out and universal devices

... analysis of Cohesive devices in English texts and those in Vietnamese ones Table of contents Page Acknowledgements Table of contents Part A: introduction I II III IV V Reasons for choosing this topic ... relationship between : cohesion - text Cohesive devices in text 4.1 Definition 4.2 Types of cohesive devices 3 3 4 6 7 CHAPTER 2: Cohesive Devices in Engish texts 2.1 Reference 2.1.1 Reference ... 18 19 19 19 19 20 20 20 20 20 21 21 22 Vinh University Contrastive analysis of Cohesive devices in English texts and those in Vietnamese ones 2.4.1.2 Indirect repetition 2.4.2 Lexical collocation...

Ngày tải lên: 12/12/2013, 00:03

... their position in the input) are sorted in Line and named in Line using a subroutine to be discussed If all triples are unique, no recursion is necessary (Line 4) Otherwise, Line assembles the ... assembles the recursive subproblem, Line solves it, and Line brings it into a form compatible with the output of the naming routine Line permutes 24 F Kulla and P Sanders Function pDC3 (T ) S:= ((T ... Passing Interface (MPI) has been the dominant programming model for high performance parallel computing, in large part because it is universally available and scales to thousands of processors In...

Ngày tải lên: 22/03/2014, 15:20

... increase in annealing temperature initiates more intermixing, and therefore improves the uniformity in shape, size and composition of Qdash leading to reduction in PL linewidth The result points ... PL spectra in Fig are broadened with increasing optical excitation densities Furthermore, an increase in integrated PL intensity after intermixing 10 Advances in Optical and Photonic Devices occurs ... changing broadband lasing is obtained from the quasicontinuous interband transition by the inhomogeneous Qdash ensembles To further enhance the broad spectrum emission and fine tune the lasing...

Ngày tải lên: 21/06/2014, 13:20

... distribution of noninteracting Qdashes at an intermediate intermixing, are achieved after the intermixing The inset of Fig 13, showing the changes of FWHM of the broadband laser with injection depicts ... for clarity) The lines are as the guide to the eyes indicating the confined state lasing lines, E0 and E1 (dashed lines) and the wavelength coverage of laser emission (dotted lines) The spectra ... owing to inhomogeneous noninteracting quantum confined nanostructures in addition to self broadening effect demonstrate a broad and continuous emission spectrum Broadband Emission in Quantum-Dash...

Ngày tải lên: 21/06/2014, 13:20

... directly and independently controlled by controlling the effective refractive index in these mirror regions Any change 46 Advances in Optical and Photonic Devices in the effective refractive index in ... Advances in Optical and Photonic Devices in this case That is the reason why we make use of the flower design in enhancing the PQR light output power since the increase of the PQR region by sacrificing ... Advances in Optical and Photonic Devices total cavity length is ~ 2345 µm and each slot has a length in the propagation direction of ~ µm By having slightly differing slot spacing in the front and...

Ngày tải lên: 21/06/2014, 13:20

... came up with innovative solutions and components, to meet the market demand This in- phase, demand and supply, problem and solution and consumer need and innovation cycle, has ushered us in to the ... layer and the grating layer is 50nm A grating is defined by electron-beam lithography in DFB LD section After the InGaAsP grating formation by wet chemical etching, 1μm-thick p-InP upper cladding ... heat sink temperature from to 25 ºC, here the temperature is varied linearly over this range increasing from left to right in Fig 17 below A continuous tuning of over nm while maintaining a SMSR...

Ngày tải lên: 21/06/2014, 13:20

... Advances in Optical and Photonic Devices other researchers on other semiconductor materials such as GaAs, InSb, Si and InP The tunnel junction is formed by joining two highly doped (degenerate) “p” and ... localize the current injection without having to etch a mesa 74 Advances in Optical and Photonic Devices The resulting device was therefore coplanar in structure It can be ascertained from Table.1.1 ... changing the bias current During the optical injection-locking process the internal parameters of the cavity are changed by varying the photon concentration inside the cavity Since the locking...

Ngày tải lên: 21/06/2014, 13:20

... and is therefore distinctly multimode Since optical injection-locking favours single-mode operation by eliminating longitudinal modes and since the modes generated in VCSELs are not longitudinal, ... be eliminated Also, injection-locking experiments in the static domain such as linewidth, polarization and RIN measurements could be carried out using fibred follower VCSEL without suffering from ... S21 curves An increase in injected optical power, while remaining keeping the VCSELs in negative detuning configuration, results in the increase of effective bandwidth Effective bandwidths as...

Ngày tải lên: 21/06/2014, 13:20

... whereas infrared applications include intra-band and inter-sub-band photodetection, and infrared emission Below is presented a brief summary of the main progress on optical and optoelectronic devices ... 1987) and photo-detecting (PD) structures (Chen et al., 1991) The nature and the energies involved in the carrier transition induced by the light interaction with the tunnelling layers determine ... capacitance C, resulting from charging and discharging of electrons of DBQW and depletion regions, in parallel with a voltage depend current source I = F(V), a series resistance R arising mainly from the...

Ngày tải lên: 21/06/2014, 13:20

... routing has been attracting much interest to overcome the bottleneck of routing function in high-speed networks In particular, photonic label routing network is expected to provide fast routing ... transmission line and wire bond equivalent inductance, the RTD intrinsic capacitance and the devices equivalent series resistance, respectively 194 Advances in Optical and Photonic Devices rf out V ... laser output showing frequency division by when a signal with fin = 0.9 GHz was injected into an RTD-LD free-running oscillating at around 0.5 GHz Since the sub-harmonic windows appear in limited...

Ngày tải lên: 21/06/2014, 13:20

... external 236 Advances in Optical and Photonic Devices (b) QD FP laser diode Nomarized emission intensity (a) Ultra Wide Band -O-band O-band InAs Quantum Dot in Well+Sb InGaAs Quantum Dot+Sb 1000 ... and L-band: 1565–1625 nm) The widening of an optical amplifier bandwidth has been intensively studied in the conventional photonic bands of the C- and L-band However, GaAs-based, Si-based, and SiGe-based ... photonic transport in the 1-μm waveband, a long-distance single-mode holey fiber (HF) and an arrayed waveguide grating (AWG) are also introduced for the transmission line and MUX/DEMUX devices, respectively...

Ngày tải lên: 21/06/2014, 13:20

... the value of intrinsic gain of level 106 or more in semiconductor structures is not trivial task in development of silicon photomultipliers For remaining, the principle of internal gain of multiplication ... photon interaction in the space distributed structure of equivalent micro-cells and integrated on the output and correspondent to the number of incoming photons Future of such devices is providing ... multiplication process and produce a self-sustaining current The initiation could be as result of incoming photon interaction or termal created carrier inside depleted area For the stopping of the avalanche...

Ngày tải lên: 21/06/2014, 13:20

... as this information must be first determined before specifying the centre-point and bandwidth of the coating pertaining to the idler and, of particular importance for the reasons outlined above, ... thermal lensing (and, in extreme cases, optical damage) but is a useful trick to try when out of other options 3.2 Phase-matching and tuning Much has been written about phase matching in nonlinear ... consequence of a thermallyinduced increase in the focal power induced in the Nd crystal reducing the mode size (and hence, increasing intensity) of the pump field within the PPLN crystal at higher...

Ngày tải lên: 21/06/2014, 13:20

... are routinely used for the analysis of various schemes for manipulating nuclear spins NMR-like effects, such as the free-induction decay, spin echo, rf broadening, gradient broadening, exist in ... illustrated in Fig By substituting the ST distribution into the DM equation, Eq 4, we find that it is a solution of this equation The ST distribution is maintained in the SERF regime in the static and ... spin of initially disoriented spins and can lead to build up of spin polarization Although magnetic field prepolarization can be in principle used to create the preferential spin orientation and...

Ngày tải lên: 21/06/2014, 13:20

... 350 Advances in Optical and Photonic Devices saving millions of lives Multi-channel MCG provides reach information on electrical activities in the heart non-invasively, and hence this modality ... Magnetometers and Their Applications 351 Knappe, S.; Schwindt, P D D.; Gerginov, V., Shah, V.; Liew, L.; Moreland, J.; Robinson, H G.; Hollberg, L & Kitching, J (2006) Microfabricated atomic clocks and ... spin-exchange optical pumping of 3He and 129Xe Phys Rev A vol 58, p 1412 Appelt, S.; Ben-Amar Baranga, A.; Young, A R & Happer, W (1999) Light narrowing of rubidium magnetic-resonance lines in...

Ngày tải lên: 21/06/2014, 13:20

... increase in annealing temperature initiates more intermixing, and therefore improves the uniformity in shape, size and composition of Qdash leading to reduction in PL linewidth The result points ... PL spectra in Fig are broadened with increasing optical excitation densities Furthermore, an increase in integrated PL intensity after intermixing 10 Advances in Optical and Photonic Devices occurs ... changing broadband lasing is obtained from the quasicontinuous interband transition by the inhomogeneous Qdash ensembles To further enhance the broad spectrum emission and fine tune the lasing...

Ngày tải lên: 21/06/2014, 18:20

... effect in the longitudinal direction and band-filling effect, are shown as an important role in broadened lasing spectrum as injection level increases After an intermediate degree of postgrowth interdiffusion ... variation in each individual quantized energy state owing to large ensembles of noninteracting nanostructures with different sizes and compositions, in addition to self inhomogeneity broadening within ... quasi-supercontinuum interband laser diodes via the process of IFVD to promote group-III intermixing in InAs/InAlGaAs quantum-dash structure Our results show that monolithically integration of different gain...

Ngày tải lên: 21/06/2014, 18:20

... came up with innovative solutions and components, to meet the market demand This in- phase, demand and supply, problem and solution and consumer need and innovation cycle, has ushered us in to the ... Optical injection-locking is proposed as a solution to these problems It enhances the intrinsic component bandwidth and reduces frequency chirp considerably 68 Advances in Optical and Photonic Devices ... localize the current injection without having to etch a mesa 74 Advances in Optical and Photonic Devices The resulting device was therefore coplanar in structure It can be ascertained from Table.1.1...

Ngày tải lên: 21/06/2014, 18:20

... and is therefore distinctly multimode Since optical injection-locking favours single-mode operation by eliminating longitudinal modes and since the modes generated in VCSELs are not longitudinal, ... be eliminated Also, injection-locking experiments in the static domain such as linewidth, polarization and RIN measurements could be carried out using fibred follower VCSEL without suffering from ... S21 curves An increase in injected optical power, while remaining keeping the VCSELs in negative detuning configuration, results in the increase of effective bandwidth Effective bandwidths as...

Ngày tải lên: 21/06/2014, 18:20

... significant continuous wave (CW) output power at room temperature in the 2-3 and in the 4-9 µm range, respectively, while maintaining single mode operation and being reproducibly tunable in a manner ... MnAs thin films grown on the InGaAs contact layer showed strong magnetocrystalline anisotropy——an intrinsic property of a ferrimagnet, independent of grain size and shape; the MnAs thin films ... threewave mixing can be performed thanks to form birefringence This is obtained by oxidizing a few AlAs thin layers in the waveguide core, with AlAs being transformed into a low-index non-stoichiometric...

Ngày tải lên: 21/06/2014, 18:20