field effect transistors and pnpn devices
Advanced transistors for supply voltage reduction tunneling field effect transistors and high mobility MOSFETS
Ngày tải lên :
10/09/2015, 09:01
... The energy band alignment between Ge and In0.53Ga0.47As is illustrated, showing the conduction band offset of 0.2 ± 0.1 eV and valence band offset of 0.5 ± 0.1 eV The bandgap narrowing effect due ... electric field and EG is the bandgap A and B , where 18 2q GBTBT A ħ is the reduced Planck’s constant, and mr is the reduced tunneling mass mr is related to the electron effective mass me* and ... Ge0.97Sn0.03 pMOSFETs with no PMA, 450 ˚C PMA, and 500 ˚C PMA The LG and W of these devices are μm and 100 μm, respectively Both drive current and S are improved for devices with PMA In addition, PMA causes...
- 208
- 295
- 0
Morphology and charge transport in polymer organic semiconductor field effect transistors
Ngày tải lên :
10/09/2015, 08:34
... Organic field- effect transistors (OFETs) The principle of the field- effect transistor (FET) was first proposed by Lilienfeld in 193026 but it was not until the 1980s where organic field- effect transistors ... & Ando, T Field- effect transistor with polythiophene thin film Synth Met 18, 699-704 (1987) 28 Tsumura, A., Koezuka, H & Ando, T Polythiophene field- effect transistor: Its characteristics and ... rr-P3HT and PBTTT, and the general mechanism and electrical characteristics of an organic field- effect transistor (OFET) Then a brief review of the known ix ambient stability of these materials, and...
- 137
- 533
- 0
Tunneling field effect transistors for low power logic design, simulation and technology demonstration
Ngày tải lên :
10/09/2015, 09:24
... concentration Na and donor concentration Nd) along B-B’ in (b) (e) Band diagram illustrating the band-to-band tunneling of electrons along A-A’ in (a) (f) Band diagram illustrating the band-toband tunneling ... and f c (E ) are the Fermi-Dirac distribution functions, and g c (E ) and g v (E ) are the density-of-states in the conduction band and the valence band, respectively According to Eqs (1.2) and ... (HH), and spin-orbit split-off bands, and the tensile strain in Si splits Ec into Δ2 and Δ4, causing the reduction in BTBT barrier and leading to higher Ion of TFET 54 Fig 3.13 Band-to-band...
- 195
- 383
- 0
Investigation on performance and reliability improvements of gan based heterostructure field effect transistors
Ngày tải lên :
11/09/2015, 10:05
... in the field of wide bandgap compound semiconductor materials and devices [Pearton1999, Jain 2000] 1.2 AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) The heterostructure field effect ... with GaN, and the overlayer of amorphous SiO2 could, on the other hand, help withstand the higher field and reduce the gate leakage It was reported that transistors with 1-µm length gate and fabricated ... GaN-based devices 25 1.5 Motivation and synopsis of the thesis 31 CHAPTER PHYSICS IN GAN-BASED DEVICES AND CHARACTERIZATION TECHNIQUES 2.1 Physics in GaN-based devices 36 2.1.1 Schottky contact and...
- 230
- 269
- 0
Contact and source drain engineering for advanced III v field effect transistors
Ngày tải lên :
30/09/2015, 05:43
... metallization and the S/D semiconductor, and metal resistance Rmetal RSD, in particular, is a major resistance component in fin field- effect transistors (FinFETs) with narrow fin width and nanowire ... the transistors that form the basic building blocks of integrated circuits Modern logic circuits rely on n-channel and p-channel metal-oxide-semiconductor field- effect transistors (n-MOSFETs and ... has long been used as the channel material in the p-channel and nchannel metal-oxide-semiconductor field- effect transistors (p-MOSFETs and nMOSFETs, respectively) that form the basis of today’s...
- 162
- 957
- 0
Fabrication and characterization of tunneling field effect transistors (TFETs)
Ngày tải lên :
06/10/2015, 20:36
... band to band tunneling BBTBT Material related parameters for band to band tunneling xi CBTBT Material related parameters for band to band tunneling Eg Material band gap Ev,1, EFp,1 Valence band ... Equation 2.3 where EV,1 and EFp,1 are the valence band energy and hole Fermi energy on one side of the tunnel barrier, and EC,2 and EFn,2 are the conduction band energy and electron Fermi energy ... material band gap plays an important role in determining the band-to-band generation rate Utilizing a material with a smaller band gap could greatly increase the band-to-band generation rate and thus...
- 114
- 385
- 0
Tài liệu Junction Field Effect Transistors doc
Ngày tải lên :
13/12/2013, 22:15
... References: Millman, J and Halkias, C.: Integrated Electronics Analog and Digital Circuits and Systems, McGraw-Hill Book Company, New York, 1972 Sevin, L.J.: Field Effect Transistors, McGraw Hill ... Physics and Technology of Semiconductor Devices, John Wiley And Son, New York, 1967 Grebene, A.B.: Analog Integrated Circuit Design, Van Nostrand Reinhold, New York, 1972 Pierce, J.F and Paulus, ... two transistors be closely matched electrically and physically located near each other for thermal stability Either input and either output can be used or both inputs and only one output and...
- 11
- 471
- 2
Chapter 4 characteristics of field effect transistors
Ngày tải lên :
18/05/2014, 18:57
... Two kinds of field- effect devices are widely used: the junction fieldeffect transistor (JFET) and the metal-oxide semiconductor field- effect transistor (MOSFET) 4.2 JFET CONSTRUCTION AND SYMBOLS ... CHAPTER 4: Characteristics Field- Effect Transistor CHAPTER 4: CHARACTERISTICS OF FIELD- EFFECT TRANSISTOR 4.1 INTRODUCTION The operation of the field- effect transistor (FET) can be explained ... of n-chanel devices applies equally to p-channel devices if complementary (opposite in sign) voltages and currents are used Val de Loire Program p.58 CHAPTER 4: Characteristics Field- Effect Transistor...
- 10
- 378
- 0
Báo cáo hóa học: " High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors" pot
Ngày tải lên :
21/06/2014, 08:20
... ‘on’ state b at room temperature and c T = 150°C with VSUB = 0, and for the ‘off’ state d at room temperature and e T = 150°C with VSUB = density contours Figure 3b and c show the conduction current ... operation of the devices at elevated temperatures, and the measurements were compared with the two-dimensional simulation results obtained from structures identical to those of the fabricated devices ... characteristics of the fabricated (solid lines) and simulated (dashed lines) nanoribbon FETs as a function of temperature in the range between 25 and 150°C Figure 3b, c, d and e show the channel crosssections...
- 5
- 230
- 0
CHAPTER 7: Junction Field-Effect Transistors doc
Ngày tải lên :
08/08/2014, 16:22
... which are similar to the collector, base, and emitter of a bipolar junction transistor (BJT) • JFETs come in N-channel and P-channel types similar to NPN and PNP for BJTs • JFETs conduct majority ... Describe and Analyze: • JFET theory • JFETS vs Bipolars • JFET Characteristics • JFET Biasing • JFET Circuits & Applications • Troubleshooting Introduction • JFETs have three leads: drain, gate, and ... source pin The gate is grounded through a high valued resistor, and the gate current is zero So the gate is at ground potential Based on and 2, the gate becomes negative with respect to the source...
- 22
- 249
- 0
Charge transport in polymer semiconductor field effect transistors
Ngày tải lên :
10/09/2015, 09:05
... Chapter Introduction 1.1 Basics of organic field- effect transistors 1.1.1 Organic semiconductors 1.1.2 Field- effect transistors 1.1.3 OFET applications ... hopping nature of transport of field- induced carriers in polymer field- effect transistors has been known for over two decades now, the quantitative description of field effect mobility-carrier density-temperature ... electric and opto-electric properties of undoped organic materials can be used for electronic devices which are organic field- effect transistors (OFETs)1-3, organic light-emitting diodes (OLEDs)4,5 and...
- 172
- 195
- 0
Báo cáo hóa học: " Organic nanofibers integrated by transfer technique in field-effect transistor devices" pot
Ngày tải lên :
21/06/2014, 04:20
... microscopy, and the field- effect transistor characteristics were recorded with a probe station and a labview-controlled characterization system based on a data acquisition card and voltage and current ... similar field- effect transistor configurations and are therefore an obvious next subject to be studied The performance of such organic transistors is influenced by a range of factors and optimization ... bottom contact/bottom gate; BC/TG: bottom contact/top gate; FET: field- effect transistor; OLEFETs: organic light-emitting field- effect transistors; TC/BG: top contact/bottom gate 18 Acknowledgements...
- 8
- 279
- 0
báo cáo khoa học: " Comparison of Radioimmuno and Carbon Nanotube Field-Effect Transistor Assays for Measuring Insulin-Like Growth Factor-1 in a Preclinical Model of Human Breast Cancer" doc
Ngày tải lên :
11/08/2014, 00:23
... carbon nanotube field effect Biosens Bioelectr 2009, 24:3372-3378 doi:10.1186/1477-3155-9-36 Cite this article as: Jones et al.: Comparison of Radioimmuno and Carbon Nanotube Field- Effect Transistor ... Baltimore animal facility and maintained in accordance with institutional guidelines approved by the University of Maryland, Baltimore Animal Care and Use Committee To compare RIA and CNT-FET assays, ... MMTV-Cre mice and wild type C57Bl/6 mice were euthanized at 3, and 12 months of age to collect trunk blood For histology, mammary tissue from 3, and 12 month old mice was removed post mortem and formalin...
- 6
- 329
- 0
Báo cáo y học: "Effect of the molecular adsorbent recirculating system and Prometheus devices on systemic haemodynamics and vasoactive agents in patients with acute-on-chronic alcoholic liver failure" potx
Ngày tải lên :
13/08/2014, 01:20
... vivo, as suggested by Stamler and colleagues [38] and Rafikova and colleagues [39], and result in the removal of NO in this way by MARS, remains subject to practical and theoretical criticism [38-41] ... (Aspirant mandaat – FWO Vlaanderen) FN was supported by FWO Vlaanderen G.0495.04 References Authors' contributions WL, AW and FN were involved in the design, performance, coordination and statistical ... potential elimination by the devices, circulating endogenous vasopressors and NOx levels were also measured in the albumin dialysate of both the MARS and Prometheus devices Determination of the...
- 13
- 432
- 0
Numerical quantum modeling of field effect transistor with sub 10nm thin film semiconductor layer as active channel physical limits and engineering challenges
Ngày tải lên :
13/09/2015, 21:19
... Subband Structure and Device Electrostatics (2) Homogeneous Transport and Low -Field Mobility (3) Quantum Ballistic Transport and Device Limits, all conducted using the Ultra-Thin Body (UTB) devices ... sufficiency of a six-band Hamiltonian [Luttinger55] approach Fig shows the comparison of hole subband structure calculated with an eight-band and six-band ˙ Hamiltonian for a Si and Ge quantum well ... = ∂L2 RM S 39 (20) (21) Subband Energy (meV) 100 ky=0 Silicon Bandstructure kx=ky 200 300 400 Six Bands Eight Bands (a) -0.2 -0.1 0.0 0.1 -1 0.2 Six Bands Eight Bands 200 300 ky=0 400 (b) -0.2...
- 237
- 254
- 0
Carbon nanotube field effect transistor based decimal decoder and multiplexer circuits
Ngày tải lên :
16/09/2016, 17:12
... charge screening effects, doped source-drain extension regions, scattering (nonideal near-ballistic transport), back-gate (substrate bias) effect and Source/Drain, and Gate resistances and capacitances ... than 3D and 2D device structures In terms of the device operation mechanism, CNFET can be categorized as either Schottky Barrier (SB) controlled FET (SB-CNFET), MOSFET-like FET and band-to-band tunneling ... nanotube and two metallic contacts with a specific work function, acting as source and drain The work function of the metallic source and drain determines the type of the channel (N or P ) and consequently...
- 5
- 346
- 0
Mechanisms and Mechanical Devices Sourcebook - Chapter 3
Ngày tải lên :
22/10/2012, 14:26
... Cutoff and transfer devices for glass tubes The upper part of a rotating glass tube is held by a chuck (not shown) When the cutter cuts the tube to a given length, the mandrel comes down and a ... APPLICATIONS Viscous liquid adhesives are used to glue fabrics and paper, apply paper labels, make cardboard and wooden boxes and shoes, and bind books Specially designed machines are required if ... strike and rest on pin Pin now moves into the passage way, and if the bottom of the “U” is facing to the right, the pin would kick over the part as shown by the dotted lines If, on the other hand,...
- 41
- 567
- 1
Mechanisms and Mechanical Devices Sourcebook - Chapter 4
Ngày tải lên :
22/10/2012, 14:26
... 4, and T3/T4 = L3/L4 = 2/3, where T3 and T4 are the numbers of teeth on gears and T1 and T2 will denote the numbers of teeth on gears and 98 and S = ∆θ 3/θ30 Hence θ30(1 + S)L3 = 360º For S = and ... = r4 and r2 = r3, there is no “differential motion” and the output remains stationary Thus if one gear pair, say and 4, is made partly circular and partly noncircular, then where r2 = r3 and r1 ... comprises a system that tends to hold the link and pawl against the outside circumference of the wheel and to push the stub and pawl point toward each other and into differently spaced wells between...
- 33
- 507
- 0
Mechanisms and Mechanical Devices Sourcebook - Chapter 5
Ngày tải lên :
22/10/2012, 14:26
... 11:45 AM Page 134 TWELVE EXPANDING AND CONTRACTING DEVICES Parallel bars, telescoping slides, and other devices that can spark answers to many design problems Figs and Expanding grilles are often ... Dynamic and static balancing is simplified when an expanding wheel is attached to a nonexpanding main wheel As a pulley, an expanding wheel can have a steel band fastened to only one section and ... steel band, or rope around the drum is fastened to the driving and driven members; sprocket-wheels and chain can replace the drum and belt GEARS Fig Matching gear-segments Fig 10 Racks and coupled...
- 46
- 572
- 0