fabrication of photovoltaic devices by layer by layer polyelectrolyte deposition method
Báo cáo hóa học: " Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application" pdf
Ngày tải lên :
21/06/2014, 03:20
... the HfO2 layer, showing redeposition of reaction by- products on the sidewalls (c) View of the nanostructured HfO2 stripes approximately 30 s As shown in the image, a tapered etch profile with ... profile with a 70° inclination angle is achieved by the formation of a sidewall passivation layer comprised of non-volatile reaction by- products of the CF4 etching process It should be noted here ... process (a) Schematic drawing of the starting multilayer structure (b) Patterning of the photoresist by laser interference lithography (c) Pattern transfer to the SiO2 layer by CF4 ICP-RIE (d) Pattern...
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OPTIMAL placement of FACTS devices by genetic algorithm for the increased load ability of a power system
Ngày tải lên :
26/03/2016, 02:38
... placement of costly FACTS devices Here cost functions of the different FACTS devices are considered and associated in the objective function Without FACTS devices transmission loss can be minimized by ... limits of the variables Here C1(E) is the cost due to energy loss and C2(F) is the total investment cost of the FACTS Devices In this approach at first the locations of FACTS devices are defined by ... function of the GA is to find the optimum value of the different FACTS devices Here three different types of FACTS devices are used And for each type of FACTS devices, three positions are assigned Again...
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Simulation, modelling and fabrication of novel devices with steep subthreshold slope
Ngày tải lên :
14/09/2015, 14:11
... same Ioff 50 Figure 3.21 (a) Plot of off-state current Ioff measured at (VG–VT) = 0.2 V as a function of VT for pchannel I-MOS devices The Ioff of Si I-MOS device is much higher than that of SiGe ... flexibility of VT tuning 112 Figure 6.8 Plot of Ioff and Ion/Ioff ratio as a function of I-region length LI Ioff increases rapidly as LI becomes comparable to LG This also causes the Ion/Ioff ratio ... 4.11 (a) Plot of drain current ID as a function of gate overdrive (VG –VT) for I-MOS with Si RSD, and Si0.99C0.01 RSD Both devices have a LG of 60 nm and LI of 60 nm with an EOT of 30 Å The elevated...
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Báo cáo hóa học: " Layer-dependent nanoscale electrical properties of graphene studied by conductive scanning probe microscopy" docx
Ngày tải lên :
21/06/2014, 00:20
... height of a graphene layer on top of graphene is close to the interlayer distance of graphite [15,25] we fitted the measured graphene height (h) as a function of the assigned layer number (n) by ... bias of V, the ΔC values of SLG are slightly smaller than those of BLG, but at the DC bias of +3 V, the ΔC values of SLG are larger than those of BLG Figure 2e, f Page of 0 Figure AFM image of ... -10 -11 -12 Number of layers -5 -6 Number of layers Figure EFM phase images EFM phase images of the same area of Figure at bias voltages of +2 V (a) and -2 V (b) The phase shift of graphene with...
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Báo cáo hóa học: " Synthesis of Novel Double-Layer Nanostructures of SiC–WOx by a Two Step Thermal Evaporation Process" potx
Ngày tải lên :
22/06/2014, 00:20
... effect of tungsten oxide source material This simple method of fabricating a new type of double -layer nanostructures with one of the nanostructures acting as substrate for the growth of other ... new type of doublelayer nanostructures by a two-step thermal evaporation process We believe that the similar kind of growth method can be applied for other materials to grow double -layer nanostructures ... Synthesis of SiC–WOx Double -Layer Nanostructures The growth of 1D SiC–W18O49 double -layer nanostructure was achieved by a simple two step evaporation process The first step was the growth of SiC...
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Stabilisation of an excavation by an embedded improved soil layer
Ngày tải lên :
17/09/2015, 17:20
... mid-level of improved soil layer with different widths of gap (simulation of Test Gap) 195 Figure 6.21 Effect of gap width on the composite stiffness of improved soil layer 196 Figure 6.22 Effect of ... 166 6.3.4 Effect of Stiffness of Improved Soil Strut 168 6.4 Influence of Gap of Untreated Soil in between the Retaining Wall and Improved Soil Layer 171 6.4.1 Behaviour of Gap of Untreated Soil ... of Composite Ground Resistance on Passive Side 128 5.2.7 Performance of Improved Soil Layer in A Braced Excavation 132 5.3 Effect of Stiffness of Improved Soil Strut 133 5.4 Effect of Width of...
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Báo cáo hóa học: " Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering" potx
Ngày tải lên :
21/06/2014, 04:20
... was controlled by the deposition time The deposition rates were found to be 7.4 and 7.8 nm/min, for SiO2 and SiGe + SiO2 layers, respectively The thicknesses of SiGe + SiO2 and SiO2 layers are and ... was applied to examine the layer structure of the as-grown multilayers Figure shows the depth profiles of the as grown and annealed films obtained from the fits [15] of the measured RBS intensity ... presence of Ge atoms in the layers near the interface filmsubstrate The lack of the presence of for any Raman feature can be interpreted as a consequence of the decrease in the amount of material...
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Báo cáo hóa học: " Fabrication of ordered nanoporous anodic alumina prepatterned by mold-assisted chemical etching" docx
Ngày tải lên :
21/06/2014, 05:20
... mediated by a PDMS template By means of using the diluted (2%) mixed acid solution as a chemical etchant, the wet soft stamp can indent nanoscale shallow concaves on aluminum without the need of excessive ... Whitesides GM: Solvent Compatibility of Poly (Dimethylsiloxane)-Based Microfluidic Devices Anal Chem 2003, 75:6544 22 Ono S, Masuko N: Evaluation of pore diameter of anodic porous films formed on ... and 0.2 M CH3COOH) The nitric acid consumes some of the aluminum material to form an aluminum oxide layer This oxide layer is then dissolved by the phosphoric acid, and more Al 2O3 is formed...
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Báo cáo hóa học: " Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy" pptx
Ngày tải lên :
21/06/2014, 08:20
... take place in case of very low As supply to the Ga droplets [16] In these conditions of very low As flux, the surface mobility of Ga atoms is so large that an uniform layer of GaAs might be formed ... discussed, only a fraction of the total supplied Ga is effectively crystallized to form the Triple Rings, while the remaining 6–7 MLs of Ga atoms concur to the formation of a 2D layer of GaAs, as described ... complete reaction of metallic Ga with As It is worth mentioning that a growth interruption time of around h was used to reach the thermal stability of the sample after each change of the substrate...
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Báo cáo hóa học: "Fabrication of Uniform Au–Carbon Nanofiber by Two-Step Low Temperature Decomposition" docx
Ngày tải lên :
21/06/2014, 20:20
... region of the channel At the same time, due to the strong adhesion between the aluminol groups of AAO and the hydroxyl groups of sucrose, [21] a thin layer of sucrose might remain on the wall of ... diffraction peaks of Au in the XRD pattern of Au/ C–AAO are identical to those of Au–AAO [15] This indicates that the crystal structure of the Au nanoparticles Fig XRD patterns of (a) carbonized ... diameter of the Au nanoparticles and the distance of the bridge in the crosslinked CNFs is the same as the diameter of AAO channel suggests that the fibers are the splits of the tubular shape of carbon...
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Báo cáo hóa học: "Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3 Nanowires Based on Porous Anodic Alumina Film" potx
Ngày tải lên :
21/06/2014, 20:20
... like to thank Prof S S Fan, Prof Y D Li, Prof L J Bie, and Mr Y C Sun for their help and valuable discussions This work was supported by the National Natural Science Foundation of China under ... that most of the alumina nanowires have been converted into the AlN nanowires during heat treatment Fig FE-SEM images of densely packed alumina nanowires produced by chemical etching of the porous ... the supplement of the additional evaporated aluminum, and thus gives a larger diameter of the AlN nanowires than that of the Al2O3 ones Summary and Conclusions Fig FE-SEM image of close-packed...
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Báo cáo hóa học: " Research Article Problem Solving of Low Data Throughput on Mobile Devices by Artefacts Prebuffering Ondrej Krejcar" pptx
Ngày tải lên :
21/06/2014, 22:20
... left side of the screen contains the text field of artefact metadata as a position in 3D space This position is determined by the artefact size (in case of building plan) or by binding of the artefact ... of WiFi signals of nearby APs (time of these operations is measured in Locator Time text window) will start The info about nearby APs is sent to the PDPT Server which responds with a number of ... combination of a predicted user position with prebuffering of data associated with physical locations bears many advantages in increased throughput of mobile devices An interesting solution (Microsoft...
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Báo cáo hóa học: " Fabrication of transparent lead-free KNN glass-ceramics by incorporation method" potx
Ngày tải lên :
22/06/2014, 00:20
... 1960 by Egerton and Dillon [1] It also has a high curie temperature of 420°C, piezoelectric constant (d33) of 80 pC/N, and coupling factor coefficient (kp) of 0.35 The crystal structure of KNN ... respectively Materials and methods Figure compared the conventional glass-ceramic method and the incorporation method In the conventional glass-ceramic method, all simple oxides of a desired composition ... glass-ceramic method, the high temperature of about 700°C was used to precipitate a high-niobate phase which caused small angle light scattering By using the incorporation method, a lower temperature of...
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Báo cáo hóa học: " Fabrication of Carbon Nanotube/SiO2 and Carbon Nanotube/ SiO2/Ag Nanoparticles Hybrids by Using Plasma Treatment" pptx
Ngày tải lên :
22/06/2014, 00:20
... Discussion Plasma Treatment of SWCNT and Fabrication of SWCNT@SiO2 Therby The side walls of SWCNTs can be modified with hydroxyl groups by means of plasma treatment The presence of hydroxyl groups bearing ... diameter of ca nm) The further evidence of the existence of Ag nanoparticles is provided by EDS (Fig 3e), which reveals the presence of S and Ag on the surface of SWCNT@SiO2/Ag Similarly, by using ... introduce hydroxyl groups homogeneously on the side walls of SWCNTs Preparation of SWCNT@SiO2 Composite Scheme Schematic illustration of fabrication of SiO2-coated single wall carbon nanotubes (SWCNT@SiO2)...
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Báo cáo hóa học: " Facile Fabrication of Ultrafine Hollow Silica and Magnetic Hollow Silica Nanoparticles by a Dual-Templating Approach" pdf
Ngày tải lên :
22/06/2014, 00:20
... have a lot of potential applications As show in previous study, there are two mainly approaches include hard template (inorganic or polymer by layer -by- layer assembly, direct chemical deposition ... determined by a multipoint BET method using the adsorption data in the relative pressure (P/P0) range of 0.05–0.3 A desorption isotherm was used to determine the pore size distribution by the Barret–Joyner–Halender ... micrographs of annealed samples S3 and S4 The inset is the image of the product with high magnification image b, d The corresponding size distribution histograms of S3 and S4 e The magnification image of...
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Báo cáo hóa học: " The Fabrication of Nano-Particles in Aqueous Solution From Oxyfluoride Glass Ceramics by Thermal Induction and Corrosion Treatment" pdf
Ngày tải lên :
22/06/2014, 01:20
... In order to compare the intensity of the luminescence of all the samples as accurately as possible, the position and power of the pumping beam and the width of the slit to collect the luminescence ... ionic radius of 0.129 nm are partially substituted by Cd2? ions whose ionic radius is 0.097 nm and RE-ion with ionic radius about 0.100 nm [15] This result is further supported by TEM of our glass-ceramics ... dispersion of surface active agent Figure shows the XRD spectrum and TEM image of nano-particles after corrosion treatment process Phase identification of the nano-particles has been studied by using...
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Báo cáo hóa học: " Fabrication of Highly Ordered Polymeric Nanodot and Nanowire Arrays Templated by Supramolecular Assembly " pot
Ngày tải lên :
22/06/2014, 01:20
... 461 Fig Scheme of the fabrication of highly ordered polymeric nanodot and nanowire arrays templated by nanoporous thin films Characterization of the Ordered Thin Films The thickness of the polymer ... the samples were treated in vapors of chloroform to arrange parallel alignment of the nanodomains Nanoporous thin film was fabricated by selective extraction of HABA with methanol The nanoporous ... chloroform, methanol, and dichloromethanes were purchased from Acros Organics and used as supplied Fabrication of Ordered Nanodots and Nanowire Arrays PS-PVP and HABA (1 mol of HABA and mol of...
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Báo cáo hóa học: " Fabrication of CuO nanoparticle interlinked microsphere cages by solution method" ppt
Ngày tải lên :
22/06/2014, 22:20
... 2:107–111 Experimental Fabrication of CuO nanoparticle interlinked microsphere cages can be very simple by conversion of conventional CuO in solution and similar to that of converting conventional ... floated on the surface of the solutions but not precipitated down to the bottom of beakers, we can imagine that the precipitations were taken onto the surface of the solutions by ammonia gas Figure ... spectra of (" 111) and (111) plane to estimate their crystallite size and then average them in order to decrease the error of the system The XRD peaks of monoclinic tenorite CuO (" 111) and (111) of...
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a study of hedging devices in conversations in gone with the wind by margaret mitchell = nghiên cứu các phương tiện rào đón trong các cuộc hội thoại của tác phẩm cuốn theo chiều gió của nhà văn margaret mitchell
Ngày tải lên :
02/03/2015, 14:19
... some of 55 one of 50 many/ many of 49 a lot of/ lots of/ a lot 33 most/ most of 31 much 26 a few/ few of 18 a little/ a little of/ little a bit of a number of 495 Subtotal Approximators of frequency ... Taxonomy of hedging devices by Salager-Meyer (1994) Table 2: Summary of hedging functions and the devices used to express them by Hyland (1998) Table 3: Taxonomy of hedging devices by Yu (2009) Table ... types of hedging devices: subjunctives, tag questions, and depersonalization vi LIST OF FIGURES Figure Distribution of hedging devices in conversations in Gone with the Wind Figure Distribution of...
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An analysis of cohesive devices used in pride and prejudice by jane austen in comparison with its vietnamese translation
Ngày tải lên :
17/07/2015, 11:06
... 1 Rationale of the study Aims of the study Research questions Scope of the study Methods of the study Design of the study ... Cohesive Devices 49 2.3.1 Treatment of Referential cohesion 51 2.3.2 Treatment of Substitution 56 iv 2.3.3 Treatment of Conjunctions 57 2.3.4 Treatment of Lexical Cohesion Devices ... 1.4.2 A brief summary of “Pride and Prejudice” 25 1.4.3 The selection of certain chapter 26 CHAPTER 2: AN ANALYSIS OF COHESIVE DEVICES USED IN “PRIDE AND PREJUDICE” BY JANE AUSTEN IN...
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