dc sputtering and radio frequency rf magnetron sputtering

... my research and I am grateful to all of them Especially, I would like to sincerely thank my supervisors Prof Ariando and Prof T Venkatesan for educating and encouraging me Prof Ariando keeps me ... X Wang, K Gopinadhan, Z Huang, S Dhar, T Venkatesan, and Ariando “Electronic correlation and strain effects at the interfaces between polar and nonpolar complex oxides” http://prb.aps.org/abstract/PRB/v86/i8/e085450 ... Gopinadhan, T Venkatesan, and Ariando “Magnetoresistance of 2D and 3D electron gas in LaAlO3/SrTiO3 Heterostructures: influence of magnetic ordering, interface scattering and dimensionality” http://prb.aps.org/abstract/PRB/v84/i7/e075312...

Ngày tải lên: 10/09/2015, 09:11

... field, and (b) flat magnetic field are shown in figure The calculation was also performed analytically (Montgomery 1966) using standard relations for calculating magnetic field Design, fabrication, and ... conductor, water pressure drop and flow, the inlet and outlet connections were provided Total five inlet and five outlet connections were provided The water flow rate liter/min and pressure 3·5 kg/cm2 was ... up to kV dc was tested using high voltage Megger (Model:220123-47, Make:Megger, Biddle, England) Magnetic field mapping The performance of an electromagnet gets influenced by the design and material...

Ngày tải lên: 22/12/2013, 08:58

... duration of anodization and F- Figure SEM images of ATO NT after treatments with TiCl4: (a) and (c) top and side views with annealing temperature 350 °C; (b) and (d) top and side views with annealing ... two standard errors b Additional component in electrolytes A-D contains guanidinium thiocyanate (GuNCS, 0.1 M) in a mixture of acetonitrile and valeronitrile (volume ratio 15/1 for A and B, and ... Gratzel ¨ and co-workers,21 was designed for both front- and backilluminated NP-DSSC devices The large concentration of I2 and lack of Li+ in electrolyte C lead to the decrease in both JSC and VOC...

Ngày tải lên: 19/03/2014, 16:48

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... the surlyn polymer foil and a cover glass The deposited SWNTs, graphenes, and carbon composites were characterized by field-emission scanning electron microscopy [FE-SEM] and ultraviolet-visible ... Technologies, Fernandina Beach, FL, USA) Electrochemical impedance spectroscopy measurements were carried out with a bias illumination of 100 mW/cm2 under an open-circuit condition and in a frequency...

Ngày tải lên: 20/06/2014, 23:20

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... the surlyn polymer foil and a cover glass The deposited SWNTs, graphenes, and carbon composites were characterized by field-emission scanning electron microscopy [FE-SEM] and ultraviolet-visible ... Technologies, Fernandina Beach, FL, USA) Electrochemical impedance spectroscopy measurements were carried out with a bias illumination of 100 mW/cm2 under an open-circuit condition and in a frequency...

Ngày tải lên: 21/06/2014, 17:20

... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and Tissue ... completely and a nanotip with pyramid-like shape is developed The field emission property was measured, and the turn-on field and work function of the ultra-sharp nanotip was about 5.37 V/µm and 4.59 ... 1,000 V and measured the emission current Results and discussion The progress of transformation of the tips and photoresist at different etching time is displayed in Table From the eagle-view and...

Ngày tải lên: 21/06/2014, 17:20

... situated at 0.46 eV and 0.66 eV from the valence band edge 88 Table 4.5 Influence of a-Si:H(i)/c-Si interface defect density Dit on simulated effective carrier lifetime curves and standard heterojunction ... for this work The clustertool consists of four separate radio frequency (RF) 13.56 MHz excitation parallel-plate PECVD chambers, and one sputtering chamber for TCOs 39 Figure 3.2 Cross-sectional ... Al-coated substrate and (ii) standard μc-Si:H(n) and ZnO:Al thickness on an Al-coated substrate For the DBR stack, the μc-Si:H(n) and ZnO:Al layer thickness is chosen as 69 nm, and 142 nm respectively...

Ngày tải lên: 09/09/2015, 11:15

... index sensing and surface enhanced Raman spectroscopy (SERS) These nanostructures are patterned by low-cost and high-efficient nanofabrication tools: thermal annealing and laser interference lithography ... (a) Surface plasmon polaritons at a dielectric-metal interface (b) Plasmon dispersion curves at a metal/air interface The dispersion curves of plasmons (red solid line for surface plasmon and blue ... and (e) λ = 1298 nm) and the dipole resonances ((b) λ = 1233 nm, (d) λ = 1599 nm, and (f) λ = 1887 nm) The lattice constants of the nanorod array are 800 nm for (a) and (b), 1100 nm for (c) and...

Ngày tải lên: 09/09/2015, 11:17

... the narrow working band arising from the resonance properties In order to cover a broadband working frequency band, this study covers the metamaterials design, fabrication, and characterization ... size, (c) Hybrid design at core sizes of 24, 28, 32 and 34 µm and a constant gap of µm and (d) Hybrid design at gap sizes of 2, 4, and µm and a constant core size of 32 µm The insert for each ... resonance frequency and the size of the SRR is not valid at the visible frequency range Although adding more gaps can help keep this relationship to higher frequency, it still cannot reach the frequency...

Ngày tải lên: 10/09/2015, 08:40

... MOS-HEMTs with and without in situ VA and SiH4 treatment The number of the measured devices with and without in situ VA and SiH4 treatment are 29 and 23, respectively With in situ VA xiii and SiH4 ... wafer and Si (111) substrate removal, and BCB stands for benzocyclobutene (c) GaN/AlGaN buffer bonded to a glass wafer (d) Final device structure after releasing the carrier wafer G, S and D stand ... Ga-ON and Ga-N bond energies are located at 20 and 19.6 eV, respectively (a) Ga-ON peak is observed for the sample without VA and SiH4 treatment, and (b) is absent for the sample with VA and SiH4...

Ngày tải lên: 10/09/2015, 09:11

... high stand-by power consumption thus making Ge MSM photodetectors unfavorable and not practical Due to the narrow bandgap and strong Fermi-level pinning of the metal/Ge interface at valence band, ... that the bandwidth are

Ngày tải lên: 10/09/2015, 15:47

... husband, Feng Zhao, for his unwavering and unconditional love and support My parents and parents’ in-law also deserve the special recognition for their love and continuous encouragement and support ... adjustment of syngas ratios and recovery of hydrogen from nitrogen (ammonia production) and hydrocarbons (refinery processes) (Ho and Sirkir, 1992; Kesting and Fritzsche, 1993; Paul and Yampol’skii, 1994) ... Spillman and Sherwin, 1990; Paul and Yampol’skii, 1994; Mulder, 1996): ease of installation and operation, size and weight efficiency, potentially low energy consumption, environmentally benign and...

Ngày tải lên: 12/09/2015, 11:24

... physics and chemistry Research work has been focused on the unique structures, stability, optical and electronic properties, and chemical reactivity of Si NCs, both in free space and on surfaces ... memories include dynamic-random-access memory (DRAM) and flash memory DRAM allows fast write and erase However, its data retention is limited by junction and transistor leakages and thus frequent refresh ... surface species is only one of a number of possible luminescent mechanisms 1.2.2 Surface states or defects In the surface state models, the observed PL bands have origins related to the surface...

Ngày tải lên: 12/09/2015, 11:25

... non-volatile and rewritable [81] The model trilayer device, Al/AIDCN/Al/AIDCN/Al, had an ON/OFF ratio of more than 106 and a million write and erase cycles had been performed on this device (AIDCN=2-amino-4,5-imidazoledicarbonitrile) ... all-organic CT complexes, including C60-BDCP [61], C60-TCNQ [62], C60-DDME [63], MC-TCNQ [64], BBDN-TCNQ [64], DC- BDCB [65], DC- BDCP [66], DAB-NBMN [67], p-DA-NBMN [68], and TTF-NBMN [69], were prepared ... mainstream memory technologies include dynamic random-access memory (DRAM), static random-access memory (SRAM), and flash memory (NAND and NOR) DRAM is a random access memory that stores each bit of...

Ngày tải lên: 12/09/2015, 11:29

... asymmetry coefficient ( β ) and interface spin asymmetry coefficient ( γ ) are defined as: β= γ = ρF↓ − ρF ↑ ρF ↓ + ρF ↑ , (1.2) ↓ ↑ ↓ ↑ ARF − N − ARF − N ARF − N + ARF − N , (1.3) We can simplify ... NM interfacial scattering played a crucial role in determining the MR ratio [8] Interfacial scattering is dependent on the bandstructure of FM and NM metals at the Fermi level If the bandstructure ... the frequency- dependent shift in χ´ FIG 3.16 Temperature dependence of (a) real part (χ´) and (b) imaginary 84 part (χ˝) of the ac susceptibility for sample A4 at different dc fields and a frequency...

Ngày tải lên: 12/09/2015, 11:29

... (temperature and composition) of internal and external coagulants, bore fluid flow rate, air gap length and humidity, fiber take-up speed play important roles on membrane morphology and separation performance ... Wang, my parents and my family for their endless love, encouragement and support that enable me to continue my academic pursuing i Fabrication and Characterization of Ultrafiltration and Nanofiltration ... 1.5 Research Objectives and Project Organization 34 Chapter Effects of Flow Angle within Spinneret, Shear Rate and Elongational Ratio on Morphology and Separation Performance of Ultrafiltration...

Ngày tải lên: 12/09/2015, 11:29

... for optimum performance RF Output Power 50W SiC GaN Si 10W SiGe GaAs InP GHz 10 GHz 100 GHz Frequency Figure 1: Semiconductor materials for RF electronics RF power is plotted against Frequency [1-5] ... researchers and the device performance was investigated These included small signal microwave performance, dc performance, power performance, etc A comparison of the cutoff frequency versus gate length ... applications, and their performance is greatly dependent on the fabrication process, device structure and material parameters In order to realize high performance AlGaN/GaN HEMTs for high power and high frequency...

Ngày tải lên: 05/10/2015, 22:32

... Leong and Mr Wong Wai Kong for their technical support and help Last but not least, I would also like to thank all those who have helped me in one way or another and whose support and understanding ... varies and it depends on the cleanliness of the interface between the FM and NM Ku et al [16] attributed their high spin polarization of 26 % to the well-controlled interface treatment between FM and ... the spin injector and detector in order to study the spin relaxation lengths in copper and aluminum The spin relaxation lengths of copper and aluminum at 20 K were found to be µm and 300nm, respectively...

Ngày tải lên: 05/10/2015, 22:32

... Acknowledgements First and foremost, I thank my supervisor, A/Prof Liu Xiang Yang and co-supervisor, A/Prof Ji Wei, and Dr Zhang Keqin for their invaluable guidance and advice throughout my entire candidature ... Denning, and A J Turberfield, Nature 404, 53-56 (2000) [24] Y Monovoukas and A P Gast, J Colloid Interface Sci 128, 533-548 (1989) [25] P N Pusey, W van Megen, P Bartlett, B J Ackerson, J G Rarity, and ... [35] B T Holland, C F Blanford, and A Stein, Science 281, 538-540 (1998) [36] B T Holland, C F Blanford, T Do, and A Stein, Chem Mater 11, 795-805 (1999) [37] J E G J Wijnhoven and W L Vos, Science...

Ngày tải lên: 05/10/2015, 22:32

... (300nm) of Aluminium at rate of 1.2 Å/s using DC sputtering The details of sputtering parameters are listed in Table 3.1 and Table 3.2 Sputtering Type Sputtering Materials Base pressure Sputter ... caused by surface scattering of polarized electrons, while the PHE, in principle, does not depend on surface scattering and, therefore, only the tensorial notation of AMR is to be measured, and the ... Fundamental and Applications”, Hard covered, 1995 [2] W Thomson., Proc R Soc London 8, 546 (1857) [3] B Dieny, M Li, S.H Liao, C Horng, and K Ju, J Appl Phys., 88, pp 4140-4143 [4] Shan X Wang and Alexander...

Ngày tải lên: 05/10/2015, 22:32