combinational logic circuits and sequential logic circuits ppt

Advanced Microwave Circuits and Systems Part 11 ppt

... isolation between ports 1 and 4, and 2 and 3 is greater than 19 dB in the 3.1 to 10.6 GHz frequency band. In the same band, the coupling between ports 1 and 3 and 2 and 4 is 3 dB with a ±1 dB ... simulated and measured return loss characteristics at Port 1 and the simulated and measured transmission coefficients between port 1 and Port 8 and 9. Similarly, Fig. 11 presents the simulated and ... Port 8 and 9 of the reflectometer. Fig. 11. Simulated and measured reflection coefficient at Port 2, and simulated and measured transmission coefficients between Port 2 and Port 3, 8 and 9....

Ngày tải lên: 20/06/2014, 11:20

35 308 0

Advanced Microwave Circuits and Systems Part 13 pptx

... AdvancedMicrowave Circuits and Systems442 complex reflection coefficient as defined in (6) due to open, short and load conditions for    and   . The incident and backscatter waves ... consisting of a pole and zero as shown in Fig. 8 located inside a segment of bandwidth with start and stop frequencies f1 and f2. We are allowed to move the positions of poles and zeros within ... AdvancedMicrowave Circuits and Systems446 There could be alternative ways to recover the phase ripple information and this method is not claimed to be the optimum one. We observe that the detection bandwidth...

Ngày tải lên: 20/06/2014, 11:20

35 346 0

Advanced Microwave Circuits and Systems Part 15 ppt

... between larvae and adults mortality rate of Tribolium and Sitophilus Granarius exposed to microwave radiation (2.44 GHz) in terms of exposed time AdvancedMicrowave Circuits and Systems488 ... lives will AdvancedMicrowave Circuits and Systems490 Ikediala, J. N.; Tang, J.; Neven, L. G.; Drake, S. R.; (2000). “Dielectric Properties of apple culvitars and codling moth larve, Transaction ... Agriculture” , 3rd International Conference on Broadband Dielectric Spectroscopy and its Applications, 23-26 August 2004, Delft, Netherlands, pp.200. Nelson, S.O.; Tetson, L. E.; (1974). “Possibilities...

Ngày tải lên: 20/06/2014, 11:20

8 263 0

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 4 ppt

... AdvancedMicrowave and MillimeterWave Technologies:SemiconductorDevices, Circuits and Systems122 device quality factor (Q) and (iv) of SDR and DDR diodes for both flat and SLHL structures,. ... and Johnson’s FOM for Si as unity, the Baliga and Johnson’s FOM for GaAs are 11.0 and 7.1, respectively, while those for WBG semiconductor SiC are 29.0 and 278 and those for GaN are 77.8 and ... IMPATT diodes are designed and studied thoroughly by Mukherjee et al. (2009 a) at three different window frequencies: 35 GHz (Ka-band), 140 GHz (D-band) and 220 GHz (Y- band) and the corresponding...