clustered sustainable regenerative plan for pullman theory and practice

... moral and religious understandings that is Jeff Spinner-Halev, “Cultural Pluralism and Partial Citizenship,” in Christian Joppke and Steven Lukes, eds., Multicultural Questions (Oxford: Oxford ... public reason, 115–117 and reciprocity, 115–116 and social cooperation, 115 democracy, 9, 11, 43–46 and liberty, 83–84 and particular circumstances, 62–64 and truth, 82–83 and value pluralism, ... of, 32–35 and liberalism, 57–58, 59–62 and moral particularism, 58 n19 and negative liberty, 52, 58, 63 and political pluralism, 38 and public reason, 44–45 radical v restricted, 49 and truth,

Ngày tải lên: 30/03/2020, 19:32

... reduced, and forward body bias (in this example, NMOS forward body bias) can be applied to further increase the performance. This combination reduces the guardband needed for maximum temperature and, ... logic levels for correct functionality IN−NOR OUT−NAND ,V 0.15 0.1 V V OUT−NAND ,V IN−NOR 0.2 0.05 0 0 0.2 0.15 0.1 0.05 Logic failure NAND NOR 0.05 V NAND NOR 0.1 0.15 ,V IN−NAND 0.2 OUT−NOR... ... power for the FBB design at the same clock frequency. When the adder is put into standby mode, ZBB is used for the core, and this results in a leakage reduction of 2×. Total power savings for

Ngày tải lên: 21/06/2014, 22:20

... the effort, hardware, and power are expended on something which is rarely used Given random operands, the longest carry chain in an N-bit adder is O(N), but the average length is O(log2(N)); for ... cache sleeping and methods for regulating the sleep voltage, as well as schemes for taking the cache into and out of sleep are discussed Finally, the chapter examines the yield and reliability, ... propagation To speed them up requires considerable effort, and hence hardware, and hence energy is typically expended in fast carry logic of some form This ensures that the critical path – propagating

Ngày tải lên: 06/08/2014, 01:21

... simultaneously optimize for both read and write margins in the same operation, as needed in a column-multiplexed design. Therefore, row- based voltage manipulation tends to be more suitable for non-column- ... Timing-Generation Scheme and a Lithographically Symmetrical... N-diffusion leakage Therefore, the proper choice between P and N sleep should be evaluated based on the specific process and SRAM cell ... of bits, thus saving worst case power and improving worst case di/dt However, savings for typical, random data would be lower, as Chapter 11 Dynamic and Adaptive Techniques in SRAM

Ngày tải lên: 06/08/2014, 01:21

... active de-skew for reliable low skew clocks, Cache Safe Technology® for robust cache operation, and Foxton Technology® for power management. Traditional test methods are discussed, and the specific ... engine and custom test patterns... voltage, frequency, and thermal testing of the processor this is known as “functional testing” Class testers and device handlers are very complex and ... power supply shorts, shorts and opens on a limited number of I/O pads and basic functionality. Basic functionality testing is performed through special test modes and “backdoor” features that

Ngày tải lên: 06/08/2014, 01:21

... Narendra and Anantha Chandrakasan ISBN 9 78- 0- 387 -25 737 -2, 20 05 Statistical Analysis and Optimization for VLSI: Timing and Power Ashish Srivastava, Dennis Sylvester, and David ... P max Large Guardband for Power measurment variability Small Guardband for Test environment issues Adaptive Op. Point Figure 12.18 Comparison of operating point with and without adaptation. ... Limitations and Guard-Banding In traditional testing, margin (also known as guard-band) is used to ensure reliable operation when the part is operating in less than ideal conditions. Guard-bands

Ngày tải lên: 06/08/2014, 01:21

... and p n Junction Theory 38 Similarly for holes we have (2. 38b) where R, and G are recombination and generation rates for holes These , equations are called continuity equations for ... Semiconductor and pn Junction Theory 0 FREE ELECTRON (-) 0 HOLE (+I Fig. 2.1 Energy band diagram of a semiconductor (silicon) separate bands of allowed energies, called the valence band and ... energy bands are shown in the energy band diagram (see Figure 2.1). The electron energy is considered a positive quantity and is plotted upward on the energy-band diagram. If E, and E,

Ngày tải lên: 13/08/2014, 05:22

... assumes E, = 1.1 1 eV for silicon, 0.67 eV for Germanium, and 0.69 eV for SBD. The temperature exponent factor p equals 3 for silicon and germanium while for SBD its value is 2. ... diode current I, and I, for the two different structures as a function of voltage and knowing A,, Pa, A, and P, for the two structures, we can calculate I,,,, and Iperi using ... (2.76) for Qdif and Id is given by Eq. (2.82). Using Eqs. (2.74) and (2.75) for Cj we get IOVd vd ' Fc($bi. (2.86) 64 2 Basic Semiconductor and pn Junction Theory

Ngày tải lên: 13/08/2014, 05:22

... Structure and Operation (primary substrate p-type for nMOST and n-well for pMOST) or a p-well process (primary substrate n-type for pMOST and p-well for nMOST). Another alternative is to form ... structure for n- channel MOSFET is formed by implanting phosphorous (P) and arsenic (As) into the source-drain region. A lightly doped n-region (n-) is first formed using P and then ... contact via and the channel region, p, is the sheet resistance per square (n/o) and W is device width. For a typical 1 pm CMOS technology, p, = 30 and 60R/O for n+ and p+ regions,

Ngày tải lên: 13/08/2014, 05:22

... expression for Q, that is valid for all the regimes of device operation by including both the holes and electrons and thus solving the Poisson Eq. (2.41). Using Eqs. (4.33) for n and p and ... C-V characteristics of implanted poly... to use Eq (4.48) for Q , or Eq (4 .57 ) for C, For 4 < 0 we have e - + s >> e C 2 + f > e - 2 + f + 6 sand therefore, E q (4.48) can be approximated ... and R A Haken, ‘0 .5 micron CMOS for high performance at 3.3V’, IEEE IEDM, Tech Dig., pp 5 2 -5 5 (1988) 1231 C Y Lu, J M Sung, H C Kirsch, S J Hollenius, T E Smith, and L Manchanda,

Ngày tải lên: 13/08/2014, 05:22

... profile of channel implanted region under the gate for a typical 2 prn CMOS process for (a) nMOST and (b) pMOST The result of the channel implant in an otherwise uniformly doped substrate ... channel implant of depth Xi term Vo(Ns, Xi) a correction term due to the threshold voltage The N,, is implant For a uniformly doped substrate (unimplanted channels), AV,, = V, = 0 For. .. equation ... threshold voltage V,, for n- and p-channel MOSFETs as a function of substrate doping N, for n+ polysilicon gate (left scale) and p+ polysilicon gate (right scale) for three different

Ngày tải lên: 13/08/2014, 05:22

... (b) and (c) are for channel implanted devices, curve (d) is for uniformaly doped device. Although both curves (b) and (c) are for enhance- ment devices, curve (b) has higher t0,(300A), and ... capacitance and is obtained by differentiating the bulk charge Qb. For example, for a uniformly doped substrate, we can write (5.110) YCOX Cd = 2d+Ti,b' On the other hand, Yang and Chaterjee's ... curve (a) and (b) (Figs. 5.31 and 5.32) which are for Vsb = 3 V and 0 V, respectively. n-Channel Devices (nMOST). For n-channel enhancement devices (n' polysilicon gate and p-substrate)

Ngày tải lên: 13/08/2014, 05:22

... and have made use of Eq. (6.23) for y and Eq. (6.22) for Vq!. Remembering that Vcb(y = 0) = V,b and Vcb(y = L) = V,b+ V,,, the inversion charge Qis and Qid at the source and ... between 0 and 0.5 and represents the contribution to the field due to drain voltage The exponent v is approximately 0.25 for n-channel and 0.15 for p-channel devices [SO] For devices ... (6.145) and (6.146) for cYxl and cYX2 and substituting in Eq (6.144) yields (6.147) Thus is related to the bulk depletion charge Qb and to the inversion charge Q i This equation for cYeff

Ngày tải lên: 13/08/2014, 05:22

... Advance Praise for Fit Nurse: Your Total Plan for Getting Fit and Living Well “Fit Nurse: Your Total Plan for Getting Fit and Living Well is an interactive book that ... that junk!) and celebrating every birthday and holiday on the calendar (and some that are made up!) with unhealthy comfort food, and you have the prescription for any number of physical and mental ... you would like, and you may reorder the book for your staff, friends, and colleagues DIRECTIONS: Key features of the book: •  eneficial nutritional and fitness plans, diagrams, and photos are...

Ngày tải lên: 06/03/2014, 12:21

... know; And she must not rule o’er him, It’s evidently so The husband is commanded To love his loving bride; And live as does a Christian, And for his house provide The woman is commanded Her husband ... forgiveness For those whose hearts are hardened, only death awaits Speak now, and be saved, or hold your tongues and be damned for all eternity “My word today to you husbands, in particular and ... hearth and pulled our robes out of the chimney She hurried back to the barn, her dark face gleaming, and handed around the robes and hoods Lydia and Iris had brought the horses, and we mounted and...

Ngày tải lên: 29/03/2014, 14:20

... components to inputs for its other components and outputs from itself, and for transforming its inputs into input for its components Algorithms for event scheduling, numerical integration, and other necessary ... methods for computing its output from its current state and for computing its next state from its current state and input A network model has methods for retrieving its set of components, for transforming ... the duty ratio for the left and right motors Now the simulation is run for s, long enough for the tank to reach is maximum speed of approximately 0.2 m/s and run at that speed for a little over...

Ngày tải lên: 29/03/2014, 22:20

... sources of leakage current, and each of these has a different dependence on both voltage and temperature [17] Understanding of the relation between leakage and both voltage and temperature requires ... current is due to band-to-band tunneling in the presence of high electric field and traps in the band gap If the electric field is high enough, carriers can simply tunnel across the band gap However, ... Core for Low-Power and High-Performance Applications,” IEEE Journal of Solid-State Circuits, Vol 36, pp 1599–1608, November 2001 [2] M Meijer, F Pessolano, and J P de Gyvez, “Limits to Performance...

Ngày tải lên: 21/06/2014, 22:20

... determine power-performance trade-offs and leakage reduction factors with AVS and ABB Each ring-oscillator uses minimum-sized standard-cell inverters as delay elements and a nand-2 gate for enabling ... Power and Frequency Tuning The ultimate use of the AVS and ABB schemes is for performance tuning with performance being the optimal combination of frequency and power, i.e the lowest power for ... Figure 2.5 Frequency scaling and tuning for the 65nm LP-CMOS ringo Let us now investigate the frequency-scaling and tuning ranges offered by AVS and ABB in 65nm LP-CMOS For this purpose, we determined...

Ngày tải lên: 21/06/2014, 22:20

... useful for power and delay tuning in the state-of-the-art CMOS technologies We observe the benefits of AVS primarily for low power and of ABB for performance tuning For instance, for a 65nm LP-CMOS, ... previous results for compensating process-dependent frequency and leakage spread The values for frequency, power supply voltage, and leakage current are plotted for reference and tuned process ... Nair, D Antoniadis, A Chandrakasan, and Vivek De, “Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage”, IEEE Solid-State...

Ngày tải lên: 21/06/2014, 22:20

... energy References [1] V Gutnik and A Chandrakasan, “Embedded power supply for low-power DSP,” IEEE Trans VLSI Syst., vol 5, no 4, pp 425–435, Dec 1997 [2] A Sinha and A Chandrakasan, “Dynamic power ... sources for implantable medical devices,” Medical Device Manufacturing and Technology, 2002 [5] S Roundy, P K Wright, and J Rabaey, “A study of low level vibrations as a power source for wireless ... analysis and optimization for VLSI: timing and power,” New York, Springer, pp 79–132, 2005 Chapter Adaptive Supply Voltage Delivery for U-DVS Systems 121 [11] B Zhai, S Hanson, D Blaauw, and D...

Ngày tải lên: 21/06/2014, 22:20