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amc electromagnetic band gap ebg and photonic band gap pbg surfaces

PHÂN TÍCH CHƯƠNG TRÌNH MÔ PHỎNG MỘTCHIỀU AMPS – 1D (Analysis of Microelectronic and Photonic Structures)

PHÂN TÍCH CHƯƠNG TRÌNH MÔ PHỎNG MỘTCHIỀU AMPS – 1D (Analysis of Microelectronic and Photonic Structures)

Khoa học tự nhiên

... thể n-Si/p-CIS 14 CHƯƠNG CHƯƠNG TRÌNH MÔ PHỎNG MỘTCHIỀU AMPS – 1D (Analysis of Microelectronic and Photonic Structures) Chương trình mô chiều AMPS – 1D chương trình đa để khảo sát ảnh hưởng cấu...
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Tài liệu Chapter XIII Electromagnetic Oscilation, Eletromagnetic Field and Wave doc

Tài liệu Chapter XIII Electromagnetic Oscilation, Eletromagnetic Field and Wave doc

Vật lý

... fields and magnetic fields They can create each other and form a system of electromagnetic fields Electromagnetic fields can propagate in the space (vacuum or material environment) We call them electromagnetic ... Energy and momentum in electromagnetic waves: 3.4.1 Energy flow and the Poynting vector: Electromagnetic waves contain energy We already know expressions for the energy density stored in static E and ... obey the wave equation, and depend sinusoidally on time and spacial distance • The peak of E and the peak of B differ by the factor c: • Electromagnetic waves transfer energy and momentum when they...
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Advances in optical and photonic devices Part 1 pot

Advances in optical and photonic devices Part 1 pot

Kĩ thuật Viễn thông

... quasicontinuous interband transition by the inhomogeneous Qdash ensembles To further enhance the broad spectrum emission and fine tune the lasing wavelength coverage, we further engineer the bandgap energy ... Lasers Broadband Emission in Quantum-Dash Semiconductor Laser 001 Chee L Tan, Hery S Djie and Boon S Ooi Photonic Quantum Ring Laser of Whispering Cave Mode 021 O’Dae Kwon, M H Sheen and Y C Kim ... laser biomedicine 2 Advances in Optical and Photonic Devices The first mid-infrared broadband semiconductor laser was demonstrated in an intersubband structure by adopting a quantum cascade configuration...
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Advances in optical and photonic devices Part 2 pot

Advances in optical and photonic devices Part 2 pot

Kĩ thuật Viễn thông

... nanostructures will be at high nonequilibrium and lead to broadband lasing even at room temperature 4.3 Ultrabroadband lasers - as-grown and bandgap tuned devices Fig 11(a) shows the light-current ... lasing peak with increasing injection up to J = x Jth and the insignificant observation of band filling effect indicates that photon Broadband Emission in Quantum-Dash Semiconductor Laser 13 reabsorption ... broadband emission from intermixed Qdash laser at an injection of J = x Jth 14 Advances in Optical and Photonic Devices dominant wavelength is shown in longer cavity Qdash lasers of 850 µm and...
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Advances in optical and photonic devices Part 3 pptx

Advances in optical and photonic devices Part 3 pptx

Kĩ thuật Viễn thông

... electronic bandgap can be changed The gain bandwidth available to multiple quantum well lasers is ~ 100 nm and Erbium Doped Fibre Amplifiers (EDFA) have access to ~ 40 nm in the C or L band Therefore ... convex and concave MCs for focusing and guiding the PQR light through lens media and free space The convex and concave lenses of the MC are designed and fabricated as shown in Figs 19(a) and (b) Photonic ... exp −2iβ b Lb (3) ) and tbr = tbl giving a power reflection and transmission is Rbl = (rbl)2 and Tbr = (tbr)2 respectively The reflection and transmission of the back section and slot region is...
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Advances in optical and photonic devices Part 4 doc

Advances in optical and photonic devices Part 4 doc

Kĩ thuật Viễn thông

... consistently came up with innovative solutions and components, to meet the market demand This in-phase, demand and supply, problem and solution and consumer need and innovation cycle, has ushered us in ... intrinsic component bandwidth and reduces frequency chirp considerably 68 Advances in Optical and Photonic Devices Emergence of Vertical-Cavity Lasers 2.1 Historical background and motivation It ... integrated devices from the front and back facets under permanent magnetic fields of +/-0.1T and 0T The front and back facets correspond to the optical isolator and the DFB LD sides, respectively...
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Advances in optical and photonic devices Part 5 doc

Advances in optical and photonic devices Part 5 doc

Kĩ thuật Viễn thông

... data delivery over medium and short distance links It would not be an exaggeration to state that consumer demand for multimedia and interactive applications and therefore bandwidth has increased ... extended bandwidth many times the original device bandwidth The modulation response of an injection-locked laser can be characterized as one of the following three: • High Resonance Frequency, Low Bandwidth ... Advances in Optical and Photonic Devices difference between the master and follower VCSELs can also be varied to achieve the desired effect (1) (2) Where N(t) and S(t) are the electron and photon densities,...
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Advances in optical and photonic devices Part 6 doc

Advances in optical and photonic devices Part 6 doc

Kĩ thuật Viễn thông

... Lee, S.-J Park, and B.-S Yoo, “All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-μm Wavelength Range for CWDM Band 100 Advances in Optical and Photonic Devices Applications, ” IEEE Photonics Technology ... dominated by the Hartley continuum superimposed by weak Hartley bands Band structures seen at wavelengths longer than 300 nm are the Huggins bands While the strongest absorption occurs at 260 nm these ... mJ/pulse, 1kHz) and photon counting for detection and laser with high energy but low PRF (100 mJ, 10 Hz) and conventional analog detection shows that the low energy 104 Advances in Optical and Photonic...
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Advances in optical and photonic devices Part 10 pptx

Advances in optical and photonic devices Part 10 pptx

Kĩ thuật Viễn thông

... 10 nm wide) surrounded by two thinner layers of higher band- gap material (barriers, typical 1.5 nm to nm), both sandwiched between low band- gap n-type material layers, typical the well material, ... infrared applications include intra -band and inter-sub -band photodetection, and infrared emission Below is presented a brief summary of the main progress on optical and optoelectronic devices whose ... of the bandwidth and modulation depth potential of the devices The modulation efficiency characterized by the bandwidth-to-drive-voltage ratio, defined as the ratio of the operation bandwidth...
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Advances in optical and photonic devices Part 11 potx

Advances in optical and photonic devices Part 11 potx

Kĩ thuật Viễn thông

... circuits, I and II, measured without the shunt resistorcapacitor RTD-LD circuits I and II analysed here have similar PCB layout designs and LD and shunt components The RTDs used in circuit I and II ... electrical and 196 Advances in Optical and Photonic Devices Fig 22 RTD-LD I relaxation oscillation (a) electrical and (b) photo-detected optical output waveforms at around 600 MHz Fig 23 Electrical and ... transmission line and wire bond equivalent inductance, the RTD intrinsic capacitance and the devices equivalent series resistance, respectively 194 Advances in Optical and Photonic Devices rf...
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Advances in optical and photonic devices Part 13 ppt

Advances in optical and photonic devices Part 13 ppt

Kĩ thuật Viễn thông

... optical frequency band with a 4-THz bandwidth and consequently to 40 WDM channels with a 100-GHz grid The tunable frequency of the 4-THz bandwidth is similar to the bandwidth of the C -band It should ... devices have been produced for photonic transport systems because conventional photonic networks have been constructed in the C- and L -band (C -band: 1530– 1565 nm, and L -band: 1565–1625 nm) The widening ... optical amplifier bandwidth has been intensively studied in the conventional photonic bands of the C- and L -band However, GaAs-based, Si-based, and SiGe-based semiconductor photonic devices will...
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Advances in optical and photonic devices Part 14 potx

Advances in optical and photonic devices Part 14 potx

Kĩ thuật Viễn thông

... absorption in semiconductor materials 252 Advances in Optical and Photonic Devices Equivalent noise charge (e) Photon with energy higher than band gap of semiconductor material is absorbed in depleted ... material and technologies compatible to the main mass production 258 Advances in Optical and Photonic Devices technology processes as CMOS technology and more important aspect that materials and technology ... other and both type of carriers electrons and holes could participate in the avalanche process and create self-sustaining avalanche process, so the curriers rises exponentially with time and reach...
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Advances in optical and photonic devices Part 16 doc

Advances in optical and photonic devices Part 16 doc

Kĩ thuật Viễn thông

... of St Andrews United Kingdom Introduction The mid-infrared spectroscopic region (~1.5-5μm) is one of ever increasing importance Many hazardous, contraband or otherwise important molecules and compounds ... lower energy photons (denoted the signal and idler); the energy (and hence, frequency) of which add up to that of the pump 294 Advances in Optical and Photonic Devices (see Fig 1) One of the simplest ... into signal and idler power ECOPOs have enjoyed something of a revival in recent years due to the 298 Advances in Optical and Photonic Devices availability of high power, high spatial and longitudinal...
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Advances in optical and photonic devices Part 18 pot

Advances in optical and photonic devices Part 18 pot

Kĩ thuật Viễn thông

... bandwidth of several Hz Because the bandwidth and the signal amplitude are inversely related in the AM, the bandwidth investigation is very important for the analysis of the sensitivity The bandwidth ... is an optimal rate to minimize the bandwidth and to maximize sensitivity In Ref (Savukov et al., 2005) it was found that the transverse relaxation rate or bandwidth are related to the magnetometer ... refractive indices for right and left circularly polarized light components n+ and n– are not equal, where λ is the wavelength and l is the pathlength This is possible when spin-up and spin-down ground-state...
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Advances in optical and photonic devices Part 19 pdf

Advances in optical and photonic devices Part 19 pdf

Kĩ thuật Viễn thông

... 350 Advances in Optical and Photonic Devices saving millions of lives Multi-channel MCG provides reach information on electrical activities in the heart non-invasively, and hence this modality ... magnetometers and their applications Among applications MEG and ULF MRI have been considered in some detail Because low-Tc SQIUDs have been known as the most sensitive magnetometers for a long time and ... heart anomalies and the analysis of their localization In addition to biomedical applications, AMs can be also used in submarine detection, geology, archeology, military applications, and many other...
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Recent Optical and Photonic Technologies Part 1 doc

Recent Optical and Photonic Technologies Part 1 doc

Kĩ thuật Viễn thông

... (position-dependent) photonic bandgap diagramfor n(x) in (a) Ai( N ) and Bi( N ) mark the frequencies of the foremost photonic bands on the long- and shortwavelength sides of the photonic bandgap of the ... frequency of bandgaps I and III approach the central gap inherited from the single periodic system as 1/N At some point, a bandgap of width Δω/ω0 = εi/ ε begins to substantially perturb the pass band ... the surrounding regions Thus, a band- edge mode splits off from either the upper or lower photonic band and moves into the spectral interval of the photonic bandgap This allows for the propagation...
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Recent Optical and Photonic Technologies Part 2 ppt

Recent Optical and Photonic Technologies Part 2 ppt

Kĩ thuật Viễn thông

... dimensions and can introduce a photonic bandgap (a range of frequencies for which electromagnetic radiation is non-propagating) with the same dimensionality The bandgap arises due to Bragg reflection and ... Soukoulis, C M., ed (1996) Photonic band gap materials, (Kluwer, Dordrecht) 30 Recent Optical and Photonic Technologies Stefanou, N & Modinos, A (1998) “Impurity bands in photonic insulators,” Phys ... al., 2006) Figures 6(b) and depict photonic crystal waveguide dispersion diagrams The mode depicted in Figure 3(a) is associated with the lowest frequency band in the bandgap and a propagation constant...
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Recent Optical and Photonic Technologies Part 3 ppt

Recent Optical and Photonic Technologies Part 3 ppt

Kĩ thuật Viễn thông

... fabrication of three dimensional (3D) photonic crystal structures However, the fabrication of those photonic crystals with a complete photonic bandgap, i.e can exhibit bandgaps for the incident lights ... arrangements of dielectric materials which exhibit unique dispersion properties (e.g such as photonic bandgap (PBG) [15]) and that manipulate light emission behaviors In this chapter, we will concentrate ... direct band gap and the promising potential for the optoelectronic devices, such as light emitting diodes (LEDs) and laser diodes (LDs) LEDs have the advantages of small size, conserve energy, and...
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Recent Optical and Photonic Technologies Part 4 pot

Recent Optical and Photonic Technologies Part 4 pot

Kĩ thuật Viễn thông

... the photonic band, not the wavelength of the exposure laser The band structure shows that a photonic full bandgap exists between the 2nd and 3rd bands with a bandgap size of 8.7 % of the gap ... face-centered-orthorhombic lattice; (right) photonic band structure for an orthorhombic photonic crystal λphoton is the wavelength of photons in the photonic band 4.3 Bandgap size vs shifting Δz and rotation α The significance ... in Fig The relative bandgap size is measured from the bandgap diagram as shown in Fig (right) and defined by the ratio of central frequency and the frequency range of the bandgap From Holographic...
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Recent Optical and Photonic Technologies Part 5 docx

Recent Optical and Photonic Technologies Part 5 docx

Kĩ thuật Viễn thông

... THz, and its tuning capability is relatively limited 110 Recent Optical and Photonic Technologies Only few sources bring together qualities such as room temperature operation, compactness, and ... the pump beam and the terahertz wave; g0 is the parametric gain in the low-loss limit, and takes the form g0 = πω pωi I p 2c3nT ni n p χ p ∝ ωiωT I p , (2) 112 Recent Optical and Photonic Technologies ... idler wave, and pump beam, respectively, ω0 is the resonance frequency of the lowest A1-mode, and S0 is the oscillator strength The nonlinear coefficients dE and dQ represent second- and third-order...
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