a special case of fiber refractive index reconstruction

... electronics are increasing dramatically The ease of fabrication, wide-viewing angle, mechanical flexibility, transparency and excellent scalability are some of the attractive features of such devices Especially, ... angles and surface energies 75 Table 3.4: Summary of the average advancing contact angles 76 Table 3.5: Summary of the average receding contact angles 76 Table 3.6: Summary of contact angle hysteresis ... in Eastman Kodak Company reported a small molecular OLED (SM-OLED) consisting of a bi-layer thin film via vapor deposition process, to achieve a substantial advance towards a practical organic...

Ngày tải lên: 11/09/2015, 10:17

... analysis of Langmuir probe characterization for ECR plasma Indian J Phys 80: 1011–1015 Jain S K, Jain A, Hannurkar P R, Kotaiah S 2007 Characterization of plasma parameter, first beam results, and ... development at CEA/Saclay Rev Sci Instrum 75(5): 1414–1416 http://laacg1.lanl.gov Poisson code, Reference manual, LA-UR-87-126, LANL 1987 Jain S K, Jain A, Sharma D, Hannurkar P R 2006 Acquisition and analysis ... solutions and precision measurements Nucl Instr Meth Phys Res A2 98: 13–21 Bhawalkar D D, Bhujle A G, Fatnani P, Hannurkar P R, Joshi S C, Karmarkar M G, Kotaiah S, Mhaskar S P, Pande S A, Prabhu S...

Ngày tải lên: 22/12/2013, 08:58

... film annealed at 350 °C is greater than that for annealing at 450 °C owing to larger surface area of the former for enhanced dye loading A higher temperature of annealing of the latter might aid ... Dan-oh, Y.; Kasada, C.; Ohga, Y.; Shinpo, A. ; Suga, S.; Sayama, K.; Arakawa, H Langmuir 2004, 20, 4205 (35) Gao, F.; Wang, Y.; Zhang, J.; Shi, D.; Wang, M.; Humphry-Baker, R.; Wang, P.; Zakeeruddin, ... of ATO NT after ultrasonic cleaning: (a) top view and (b) side view The inset of (a) shows the enlarged pattern of the ATO NT arrays Figure Length of ATO NT (L) as a function of anodization period...

Ngày tải lên: 19/03/2014, 16:48

... three different carbon-based materials measured under similar deposition conditions of optical transmittance showed that graphene is the most suitable material for application as a counter electrode ... by an electrochemical impedance analyzer (Compacstat, Ivium Technologies, Fernandina Beach, FL, USA) Electrochemical impedance spectroscopy measurements were carried out with a bias illumination ... distance between the FTO and the stainless steel substrate was kept at cm, and a voltage of 30 V was applied The counter electrodes were annealed at 600°C for min, after which they were gradually...

Ngày tải lên: 20/06/2014, 23:20

... three different carbon-based materials measured under similar deposition conditions of optical transmittance showed that graphene is the most suitable material for application as a counter electrode ... by an electrochemical impedance analyzer (Compacstat, Ivium Technologies, Fernandina Beach, FL, USA) Electrochemical impedance spectroscopy measurements were carried out with a bias illumination ... distance between the FTO and the stainless steel substrate was kept at cm, and a voltage of 30 V was applied The counter electrodes were annealed at 600°C for min, after which they were gradually...

Ngày tải lên: 21/06/2014, 17:20

... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and ... technology are fabricated The apex of the nanotip can reach down to nm in radius By using this method, a large-area, well-aligned, and patternable nanotip array with high aspect ratio, ultra-sharp tip ... when applying the voltage Conclusions We have fabricated a large-area and well-aligned ultra-sharp nanotip array by photolithography and reactive ion etching techniques The apex of the nanotip can...

Ngày tải lên: 21/06/2014, 17:20

... certain degree of parasitic absorption, it is demonstrated in this thesis that the advantages far outweigh the disadvantages in which an increasing number of DBR unit blocks lead to (a) an increased ... peak reflectance and (b) an increased conductivity of the combined stacks For the target peak reflectance wavelength range of 900 ± 200 nm, a peak reflectance of over 90% and a sheet resistance ... coefficient of the μc-Si:H(n) film as it approaches the optical gap (absorption band edge) [see Fig 4] 163 Figure A- 2 Comparison of the calculated reflectance and absorbance of an air/5...

Ngày tải lên: 09/09/2015, 11:15

... 5.1 (a) Cross-sectional TEM image of a gate stack of the fabricated AlGaN/GaN MOS-HEMT (b) Zoomed-in image of a TaN/Al2O3/AlGaN stack (d) Cross-sectional TEM image of the TaN/Al2O3/AlGaN/GaN/Buffer ... image of a TaN/HfAlO/AlGaN/GaN stack without in situ VA and SiH4 treatment, showing that a native oxide interfacial layer is formed on the AlGaN surface (d) Cross-sectional TEM image of a TaN/HfAlO/AlGaN/GaN ... illumination[47], and various gas plasma treatments, 21 Device Passivation Surface Passivation Gate Dielectric AlGaN GaN Fig 2.1 Schematic diagram illustrating two approaches for passivating AlGaN/GaN...

Ngày tải lên: 10/09/2015, 09:11

... external bias MSM photodetectors possess the advantage of low capacitance and relative ease of fabrication The intrinsically low capacitance resulting from its configuration has always been utilized ... complexities and potential introduction of doping contaminants into the Si CMOS devices since III-V materials also act as dopants for group IV materials Germanium, a group IV material the same as Si, avoids ... high quality Ge epi-layer as v the gate of JFET was achieved using a novel epi-growth technique By laser surfaceillumination of mW on the Ge gate, an Ion/Ioff ratio up to 185 was achieved at wavelength...

Ngày tải lên: 10/09/2015, 15:47

... downstream Fig 1.1 is a schematic diagram of membrane-based gas separation process of a two-component mixture Upstream Membrane Feed Downstream Permeate l Fig 1.1 Schematic diagram of membrane separation ... finding a more stable material in scale-up of these separations Membrane technology has shared a large market in separation territories, nowadays The rapidly increasing use of membranes for gas separation ... 1994) Among these emerging applications, the separation of hydrocarbons and chlorofluoro carbon vapors from air appears to be rapidly transferred to the status of commercialization Separation of...

Ngày tải lên: 12/09/2015, 11:24

... molecular mass of ambient gases The mass ratio between Si plasma plume and ambient gas atoms (Ar, He) has a major effect on the plume dynamics in the 0– Torr pressure range [9] The heavier gas has a ... (PLD) and plasmaenhanced chemical vapor deposition (PECVD) The physical and optical properties of the Si NC films were studied as a result of high-vacuum thermal annealing, laser annealing, plasma ... identical with that of Si target for other droplets On the other hand, the Raman spectrum of the background film shows a weak crystalline peak at 515 cm-1 and the features of a- Si with a broad band...

Ngày tải lên: 12/09/2015, 11:25

... (SRAM), and flash memory (NAND and NOR) DRAM is a random access memory that stores each bit of data in a separate capacitor As the real-world capacitors are not ideal and have tendency to leak electrons, ... 1.4 Schematic structure of a nanocrystal flash memory cell Nanocrystal storage uses a silicon nanocrystal as the floating gate, and is also called nano-floating gate memory (NFGM) Instead of injecting ... Hashgawa, and Y Tokura, J Phys Soc Jpn 75, 051016-1 (2006) [58] Y Iwasa, T Koda, Y Tokura, S Koshihara, N Iwasawa, and G Saito, Appl Phys Lett 55, 2111 (1989) [59] T Ravindran and S V Subramanyam,...

Ngày tải lên: 12/09/2015, 11:29

... that of the high-temperature phase, leading to the appearance of a negative thermal remanent magnetization Detailed magnetic and electrical transport measurements revealed that the low-temperature ... of sample A4 at different temperatures; (b) MR 98 ratio as a function of temperature for sample A4 ; (c) MR curves for samples A2 , A3 , A4 , and A6 at 4.2 K FIG 3.27 (a) Hall effect for sample A4 ... a function of the applied magnetic field in sample A4 FIG 3.12 Normalized M-T curves for amorphous samples A1 , A2 , A3 , 78 A4 , and A6 at a magnetic field of T FIG 3.13 (a) Simulation results of...

Ngày tải lên: 12/09/2015, 11:29

... ii Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes 2.2 WANG KAI YU Characterization of Structural Parameters of UF hollow fiber membranes from solute separation ... 75 iii Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes 3.2 WANG KAI YU Fundamentals of the Characterization Scheme of Nanofiltration Membranes Structure ... Devalopment and Applications of Nanofiltration Membranes 15 1.2.1 Nanofiltration separation mechanisms 18 1.2.2 Nanofiltration separation models 22 1.2.3 Fabrication of nanofiltration...

Ngày tải lên: 12/09/2015, 11:29

... 20] Table 1.1 summarises the key material parameters [21] for AlGaAs/GaAs, 4H SiC and AlGaN/GaN transistors It can be seen that with large energy bandgap, high breakdown voltage, high saturation ... AlGaAs/GaAs, 4H SiC and AlGaN/GaN transistors [21] Metric AlGaAs/GaAs 4H SiC AlGaN/GaN Energy Bandgap (eV) 1.43 for GaAs 3.2 3.4 for GaN 12.5 10.0 9.5 2-3 x 1012 N /A 1-5 x 1013 20 33 8500 N /A ... Undoped GaN 2DEG AlN Sapphire Substrate Figure 2.4: Schematic of a conventional AlGaN/GaN HEMT EF 2DEG 100Å Gate Metal n+-AlGaN Donor Layer AlGaN Spacer Layer GaN Channel Layer Al2O3 Substrate Figure...

Ngày tải lên: 05/10/2015, 22:32

... shows a general schematic of a conventional vertical spin valve and a lateral spin valve respectively (a) (b) FM FM NM FM FM FM Cu Figure 1.1 Schematic diagram of a (a) vertical spin valve and a ... Last, S Hacia, M Wahle, S F Fischer and U Kunze, J Appl Phys 96, 6706 (2004) 21 Chapter Three: Fabrication and characterization of lateral spin valves CHAPTER THREE FABRICATION AND CHARACTERIZATION ... detector Anti-parallel magnetization – Low output Figure 2.3 Lateral spin valves with (a) parallel magnetization and (b) antiparallel magnetization of the FM injector and detector, giving rise to a...

Ngày tải lên: 05/10/2015, 22:32

... the array fashion and was favorable to form a square array Thirdly, the effect of pre-heating treatment on the photonic bandgap properties of silica colloidal crystals was also explored by heating ... have a complete band 16, 17 gap An alternative method is the use of chemically assisted ion beam etching to drill narrow 18, 19 channels into a GaAs or GaAsP wafer in a manner similar to that ... substrate, which can only be accommodated by the creation of cracks, and defects accommodate lattice mismatch in epitaxially grown materials The final result is a compact of spheres arranged according...

Ngày tải lên: 05/10/2015, 22:32

... possible She is also very grateful to her laboratory mates from Information Storage Materials Lab – Aung Kyaw Oo, Lim Zhao Lin, Chen Fang Hao, Zhao Zhiya, Muhammad Khaled Husain, Zhao Qiang, Fong Kien ... resistance anisotropy between the parallel and normal directions of magnetization Fig 2.2 (a) Schematic diagram of AMR configuration (b) Graph for AMR vs angle θ Fig 2.3 Schematic diagram of spin state ... magnetoresistance (GMR) and the Planar Hall Effect (PHE) are introduced The role of interlayer exchange coupling and advantages of planar Hall Effect (PHE) over anisotropic magnetoresistance (AMR) are also...

Ngày tải lên: 05/10/2015, 22:32

... is an ambipolar device, off-state leakage current would also be increased, as band-toband tunneling could also occur at the drain-to-channel junction at negative gate bias This ambipolar behavior ... experiments and simulation In this study, fabrication of lateral TFETs was carried out Fabricated devices were physically and electrically characterized and analyzed Besides an experimental study of TFET, ... side of the tunneling barrier It can be seen that the material band gap plays an important role in determining the band-to-band generation rate Utilizing a material with a smaller band gap could...

Ngày tải lên: 06/10/2015, 20:36