µt cz growth of benzophenone crystals
Báo cáo y học: " Inhibition of constitutively active Jak-Stat pathway suppresses cell growth of human T-cell leukemia virus type 1-infected T-cell lines and primary adult T-cell leukemia cells" potx
Ngày tải lên :
13/08/2014, 09:21
... reporting induction of apoptosis by ectopic expression of a dominantnegative form of Stat5 in MT-2 cells [25] Our data of a weaker effect of AG490 on the growth of normal PBMCs than that of ATL cells ... or βcasein probe AG490 inhibits the cell growth of HTLV-1-infected T-cell lines and primary ATL cells Next we examined the effect of AG490 on the growth of HTLV-1-infected T-cell lines and primary ... expression of anti-apoptotic proEffects of AG490 on the expression of anti-apoptotic proteins (A) HTLV-1-infected T-cell lines were treated with increasing concentrations of AG490 for 24 h Amounts of...
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Báo cáo y học: "Growth of Microorganisms in Total Parenteral Nutrition Solutions Without Lipid"
Ngày tải lên :
26/10/2012, 09:39
... Effects of lipid and multivitamins on the growth of Staphylococcus aureus in peripheral parenteral nutrition solutions Clin Nutr 2005;24:706-707 Rowe CE, Fukuyama TT, Martinoff JT Growth of microorganisms ... N8) of Candida albicans Experiment 2: The standard strain was used for each microorganism; the ATCC653 of S aureus, the ATCC13880 of S marcescens, the ATCC11778 of B cereus, and the ATCC10231 of ... the growth of all strains employed were examined in a commercial TPN solution without lipid in the 1st experiment To identify which factor is effective to inhibit microbial growth, the growth of...
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Tài liệu Báo cáo khoa học: MicroRNA-23a promotes the growth of gastric adenocarcinoma cell line MGC803 and downregulates interleukin-6 receptor pdf
Ngày tải lên :
18/02/2014, 04:20
... because of its higher fold of upregulation in gastric adenocarcinoma tissues Although the extent of upregulation of miR-23a in the four pairs 3730 of gastric tissues showed great variance because of ... candidate target of miR-23a miR-23a expression level 20 growth activities at the same time points (Fig 2A) To detect the effect of miR-23a on the long-term and independent growth activity of MGC803 ... addition, knockdown or overexpression of miR-23a also enhanced or decreased IL6R protein expression, respectively (Fig 5C) The effects of miR-23a on the growth of MGC803 cells after IL6R knockdown...
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Tài liệu Báo cáo Y học: The effects of ring-size analogs of the antimicrobial peptide gramicidin S on phospholipid bilayer model membranes and on the growth of Acholeplasma laidlawii B ppt
Ngày tải lên :
21/02/2014, 01:21
... presence of agents which often alter protein conformation There is good evidence from studies of the interaction of GS and its analogs with bacterial cells that the destruction of the integrity of ... components of the outer monolayer of the lipid bilayer of bacterial membranes [18,19] Finally, we investigated the relative abilities of GS10, GS12 and GS14 to inhibit the growth of A laidlawii ... Myr2Gro-PGro and other members of the homologous series of linear saturated PGs, see Zhang et al [24] The addition of mol percent of one of the three GS ring-size analogs of GS studied has a relatively...
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Báo cáo "Correlation Effects in Atomic Thermal Vibration of fcc Crystals " pdf
Ngày tải lên :
05/03/2014, 14:20
... vibration of fcc crystals 27 The purpose of this work is to study the correlation effects in atomic vibrations of fcc crystals in XAFS, i.e., to develop a new procedure for calculation of the DCF ... new procedure for study of DebyeWaller and of the atomic correlated vibration in XAFS theory Acknowledgements One of the authors (N V Hung) thanks Prof J J Rehr (University of Washington) for very ... dependence of our calculated correlation function DCF C R of Cu and Ni is illustrated in Figure and their ratio with function u2 and Figure 3: Temperature dependence of the calculated DCF C R of Cu...
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Đề tài " Growth of the number of simple closed geodesics on hyperbolic surfaces " docx
Ngày tải lên :
06/03/2014, 08:21
... the calculation of volumes of moduli spaces of bordered Riemann surfaces Idea of the proof of Theorem 4.1 Here we briefly sketch the main idea of how to calculate the integral of fγ over Mg,n ... surfaces of type Sg,n (γ), the surface that we get by cutting Sg,n along γ [Mirz3] See equation (5.5) An alternative proof In a sequel, we give a different proof of the growth of the number of simple ... number of pants decompositions of length ≤ L on a hyperbolic surface X were obtained by M Rees in [Rs] Idea of the proof of Theorem 1.2 The crux of the matter is to understand the density of Modg,n...
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Báo cáo " Growth of CdS thin films by chemical bath deposition technique " pptx
Ngày tải lên :
14/03/2014, 13:20
... VNU Journal of Science, Mathematics - Physics 24 (2008) 119-123 (a) (b) Fig SEM images of CdS thin films prepared in the bath with ml of 1M CdSO4 solution for 9h (a) and with 25 ml of 1M CdSO4 ... et al / VNU Journal of Science, Mathematics - Physics 24 (2008) 119-123 123 As reported in [6], the PL spectra of thin films growth by the spray pyrolysis technique consist of a characteristic ... h for the bath containing 25 ml of 1M CdSO4 solution and h for the bath with ml of 1M CdSO4 solution 2.2 Characterization The X-ray diffraction (XRD) patterns of the as-deposited CdS thin film...
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Báo cáo " Calculation of dispersion relation and real atomic vibration of fcc crystals containing dopant atom using effective potential " pot
Ngày tải lên :
14/03/2014, 13:20
... Ni or by Al Here the mass of dopant Ni is close to the one of Cu (host), then the forbidden zone is small, but the mass of dopant Al is more different from the one of Cu (host), then the forbidden ... magnitudes of the vibrational function of Cu atoms for Cu doped by Ni or by Al atom in the optic branch ( ω > ωmax ) Here the vibrations of dopants Ni and Al are localized at l = 0, and the mass of dopant ... than the one of Cu, then the amplitude changes of the atomic vibration of Cu are smaller than the one for Cu doped by Ni Fig 2a shows the calculated atomic vibration u2 (l = 2) of Cu and its...
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Báo cáo " Anharmonic effective potential, thermodynamic parameters, and EXAFS of hcp crystals " docx
Ngày tải lên :
14/03/2014, 13:20
... where α describes the width of the potential and D is the dissociation energy In the case of relative vibrations of absorber and backscatterer atoms, including the effect of correlation and taking ... Atomic vibrations are quantized in terms of phonon, and anharmonicity is the result of phononˆ phonon interaction, that is why we express y in terms of annihilation and creation operators, a ... the square of the many body overlap term, N j is the atomic number of each shell, the remaining parameters were defined above, the mean free path λ is defined by the imaginary part of the complex...
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Direct growth of amorphous silica nanowires by solid state transformation of sio2 films
Ngày tải lên :
16/03/2014, 15:04
... formation of a titanium oxide (TiOx ) phase by removal of oxygen from the silica layer [9] The reduction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs The growth of silica ... decomposition of TiN films The Ni islands act as a nucleation site for the a-SiONW growth, and expedite the reduction of TiN by supplying extra hydrogen by thermal decomposition of Fig FESEM photographs of ... suppresses the decomposition of TiN, as a result, it limits the growth of a-SiONWs nanowires by the mechanism Oxygen seems Fig A schematic diagram showing a growth mechanism of silica nanowires by...
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Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism
Ngày tải lên :
16/03/2014, 15:05
... layer consists of nanoparticles of a few Fig Schematic depiction of SiNW growth by the SLS mechanism: Ža deposition of a thin layer of Ni on the Si Ž111 substrate; Žb formation of the Si–Ni eutectic ... in the growth of SiNWs Because this growth process involves solid–liquid–solid phases, it is called SLS growth which is, in fact, an analogous to the VLS mechanism The growth process of a-SiNWs ... of Si atoms through the substrate–liquid ŽSL interface into the liquid droplets, and growth of SiNWs through the liquid– wire ŽLS interface; Žd final state of SiNW growth The smooth surface of...
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Growth of amorphous silicon nanowires
Ngày tải lên :
16/03/2014, 15:05
... amounts of nanowires are formed, which are of a uniform length up to micrometers The growth rate of the nanowires is estimated to be ca 15 nm/min The diameter of the nanowires is about 40 nm A lot of ... size of catalyst on the tip of the nanowires become larger than that of the particles shown in Fig 4b In the end, the bifurcation growth is formed Fig Schematic diagrams of the bifurcation growth ... extend the work of H2 gas etchings to the nanowires growth The eect of H2 gas etchings on the catalytic size and the eect of the catalytic particle size on the diameter and alignment of amorphous...
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Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane
Ngày tải lên :
16/03/2014, 15:06
... size-confined effect on the growth of SiNWs, but also facilitate the pyrolysis and deposition of silane on iron and growth of the SiNWs because of their carbothermal reduction The growth process proposed ... two-dimensional fourier transform of the outer layer of the triangle (indicated by arrow) depicting lattice spacing of Si(1 1) of 0.31 nm, Si(2 1) of 0.22 nm and Si(2 0) of 0.38 nm, respectively, the ... In a word, with the assistance of the CNTs and the catalysis of Fe particles, preference of taking the least lattice mismatch between Si and Fe leads to the growth of the single-crystal SiNWs with...
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Rational growth of highly oriented amorphous silicon nanowire films
Ngày tải lên :
16/03/2014, 15:07
... details of the edge of the layer, and reveals that the film consists of fine free-standing wires of very high density, and has a thickness of about 30 lm (also the length of the nanowires) The growth ... nanoparticles were composed of both silicon and nickel Those nanoparticles can provide evidence for the growth mechanism of the nanowires It was found that the growth mechanism of the amorphous silicon ... unusual high growth rate The estimated growth rate is about 100 nm/s Such a high growth rate may explain why the resulting nanowires are amorphous instead of crystalline, because the growth is so...
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Ultrafast growth of single crystalline si nanowires
Ngày tải lên :
16/03/2014, 15:13
... feature of SLS growth As shown by the arrow in Fig 3(c), SiNWs terminated at one end in a nanoparticle with a diameter 1∼1.2 times that of the connected nanowire Fig 3(d) shows the TEM image of an ... diffraction (SAED) pattern The d-spacings of the nanocrystals calculated from the two diffraction dots of the SAED pattern are consistent with those of Si (200) and (400) It is well established ... ultrafast growth of fabrication Conclusion In summary, Si nanowires were catalytically synthesized by calcining Si nanopowder containing Fe(NO3)3 in an H2 A pathway of the growth of SiNWs was presented...
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Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism
Ngày tải lên :
16/03/2014, 15:14
... in the growth of SiNWs Because this growth process involves solid–liquid–solid phases, it is named as a SLS growth, which is in fact an analogy of the VLS mechanism The growth process of the ... interface; (d) ÿnal state of the SiNW growth The smooth surface of the original substrate becomes rough at the end of the SiNW growth via a SLS mechanism Fig 4(a) shows an SEM image of oriented a-SiNWs ... species were ablated o by the laser beam, and the growth of the SiNWs is controlled by the well-known VLS mechanism The central idea of the VLS growth of SiNWs is that, the catalysts (usually Ni,...
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Growth of silicon nanowires on UV structurable glass using self organized nucleation centres
Ngày tải lên :
16/03/2014, 15:17
... solid growth (VLS -growth) of such large nanowires, the LMS crystals exhibit a size which seems to correspond to the diameter of the nanowires Since the eutectic temperature of the Ag–Si system of ... flux of 60 J/cm2 and tempered at 570 1C for several hours prior to the nanowire growth, which leads to the formation of Ag-clusters which initialize the growth of lithium meta silicate (LMS) crystals ... a substrate consisting of GaN on sapphire with the aid of an evaporated gold layer of nm which served as catalyst Though the growth of these nanowires follows the VLS growth regime, which is...
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Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)
Ngày tải lên :
16/03/2014, 15:17
... effects of different diffusion coefficients of gold and indium on silicon, the solubility of substrate atoms in the two metals, the surface tension of gold and indium and the surface energy of silicon ... from indium by means of PVD were found In our case, the growth of nanowires from indium seems to be rather insensitive to change of parameters like substrate temperature, rate of metal and silicon ... enhancement of decomposition of a silicon oxide layer by indium were found From the phase diagrams In–Si and Au–Si (Fig 4), it can be seen that the solubilities of silicon in gold and indium at our growth...
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