§ 3 basic waveguide fabrication and characterization

... 26 28 30 32 33 33 Chapter Metal strip and wire waveguides for surface plasmon polaritons, J.R Krenn (Graz, Austria) and J.-C Weeber, A Dereux (Dijon, France) 35 2.1 ... 4.1 The basic idea 4.2 Using the extinction spectrum 2 23 224 228 231 233 234 238 238 239 Contents x 4.2.1 ... index and were thick enough to accommodate the EM eld of the 1, y 3] Basic waveguide fabrication and characterization 13 LRSPP This was guaranteed by applying the same polymer for the top and bottom...

Ngày tải lên: 04/06/2014, 14:57

... Eq (3. 2)) limits the temperature of the experimental environment, length and diameter of the specimen as follows: (3. 2) where g = 16!"T0 3/ (#CpD), $ = L2/(%2&) and & = k/(#Cp) Equation (3. 3) should ... etching 3. 3 Ge nanowire growth The process chosen for Ge nanowire growth is VLS as discussed in section 2 .3. 1.1 Growth of GeNWs was carried out in a three-zone furnace (Lindberg/Blue STF5 534 6C) ... exposure process and may lead to under-exposure problem Experimental Details 63 !"#$%&' ()' *+,,&%-' /' ,0&' 1' &2 &3, %.4&5' 4%+6-' +/,&%' &78&+9' &:;.5$%&' +-4' *

Ngày tải lên: 13/10/2015, 15:57

... Meth Phys Res B42 (3) : 30 3 30 6 Becker R 1990 Magnetic fields calculated by Intmag compared with analytical solutions and precision measurements Nucl Instr Meth Phys Res A298: 13 21 Bhawalkar D D, ... restricted to less than 20◦ C The inductance and resistance of the solenoid coils were measured using precision LCR meter (Model:PM 630 6, Design, fabrication, and characterization of a solenoid system ... water pressure drop and flow, the inlet and outlet connections were provided Total five inlet and five outlet connections were provided The water flow rate liter/min and pressure 3 5 kg/cm2 was maintained...

Ngày tải lên: 22/12/2013, 08:58

... appropriate rinsing and drying (30 0 °C, 30 min); for the second treatment, the films were immersed in TiCl4(aq) (0.1 M, 1.5 h) again and then annealed at either 35 0 or 450 °C for 30 Parts a/c and b/d of ... duration of anodization and F- Figure SEM images of ATO NT after treatments with TiCl4: (a) and (c) top and side views with annealing temperature 35 0 °C; (b) and (d) top and side views with annealing ... cm-2) and Active Area 0.28 cm2a t/h 0.5 L/µm JSC/mA cm-2 VOC/V FF 6.4 8.0 10.0 9.7 11.4 12.2 12.0 12.5 0.76 0.76 0.72 0. 73 0.72 0.71 0.70 0.72 0.62 0.61 0.60 0.61 0.60 0.58 0.59 0.58 3. 0 3. 7 4.3...

Ngày tải lên: 19/03/2014, 16:48

... (Ω) Voc (V) Jsc (mA/cm2) FF (%) h (%) Graphenes 31 , 600 SWNTs 2, 510 16.212 0.7 13. 1 63. 6 5.87 35 .34 7 0.71 13. 0 52 .3 Composites 6, 31 0 4.94 17. 631 0.7 12.7 56.5 5.17 Rct1, redox frequency; Voc, ... films Nat 1990, 35 3: 737 -740 Grätzel M: Dye-sensitized solar cells J Photochem Photobiol C: Photochem Rev 20 03, 4:145-1 53 Grätzel M: Photoelectrochemical cells Nat 2001, 414 :33 8 -34 4 Grätzel M: ... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ...

Ngày tải lên: 20/06/2014, 23:20

... (Ω) Voc (V) Jsc (mA/cm2) FF (%) h (%) Graphenes 31 , 600 SWNTs 2, 510 16.212 0.7 13. 1 63. 6 5.87 35 .34 7 0.71 13. 0 52 .3 Composites 6, 31 0 4.94 17. 631 0.7 12.7 56.5 5.17 Rct1, redox frequency; Voc, ... films Nat 1990, 35 3: 737 -740 Grätzel M: Dye-sensitized solar cells J Photochem Photobiol C: Photochem Rev 20 03, 4:145-1 53 Grätzel M: Photoelectrochemical cells Nat 2001, 414 :33 8 -34 4 Grätzel M: ... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ...

Ngày tải lên: 21/06/2014, 17:20

... Lett 2009, 9:1 839 -18 43 Xu CX, Sun XW: Field emission from zinc oxide nanopins Appl Phys Lett 20 03, 83: 3806 -38 08 Kuo HS, Hwang IS, Fu TY, Wu JY, Chang CC, Tsong TT: Preparation and characterization ... constants equal to 1.56 × 10−10 A eV V−2 and 6. 83 × 1 03 eV 3/ 2 V µm−1, respectively The field enhancement factor is β, and ϕ is the work function; β and ϕ could be extracted by fitting the straight ... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and...

Ngày tải lên: 21/06/2014, 17:20

... (cm2) 144 101 171 238 .9 2 43 1 03 3.7 4 4 Jsc (mA/cm2) 41.8 39 .5 40.0 37 .5 37 .2 38 .7 41.4 41.8 38 .4 38 .9 38 .5 Voc (mV) 740 750 738 724 733 733 730 7 23 722 727 735 FF (%) 82.7 83. 2 81.9 81.9 81.8 ... 25.6 24.7 24.2 22 .3 22 .3 22.2 24.7 23. 4 22 .3 22.1 21.9 Publication year 2014 20 13 20 13 20 13 20 13 2012 20 13 2012 2012 20 13 2011 Ref [11] [9] [22] [ 23] [24] [25] [26] [27] [28] [29] [30 ] The efficiency ... principle 31 2.7 Basics of semiconductor device modelling 32 CHAPTER : Design, fabrication and characterisation of doped silicon thin films 38 3. 1 Methodology 38 3. 2 Results and...

Ngày tải lên: 09/09/2015, 11:15

... 53 3.1.1 Fabrication Process 53 3.1.2 Sample cleaning 54 3. 1 .3 Photoresist coating .55 3. 1.4 Laser interference lithography 56 3. 1.5 RIE etching 64 3. 1.6 ... 73 vi 3. 2.4 Variable angle spectroscopic ellipsometry 75 3. 2.5 Raman spectroscopy 76 3. 3 Simulation tool 77 3. 3.1 FDTD 77 3. 4 Summary .78 3. 5 References ... 66 3. 1.7 Lift-off 67 3. 1.8 Thermal annealing .68 3. 2 Characterization 69 3. 2.1 Scanning electron microscopy 70 3. 2.2 Atomic force microscopy 72 3. 2 .3 UV-Vis-NIR...

Ngày tải lên: 09/09/2015, 11:17

... 29 3. 1 Introduction 29 3. 2 Sample preparation 29 3. 3 Laser micro-lens array (MLA) lithography 31 3. 4 Metal film deposition and lift-off 34 3. 5 Optical ... Lim, L.P Shi, and T.C Chong Applied Physics A, 101, 33 -36 (2010) Fabrication and Characterization of Broadband Terahertz Wire-grid Polarizer Z.C Chen, M.H Hong, C.S Lim, L.P Shi, and T.C Chong ... Hybrid design at core sizes of 24, 28, 32 and 34 µm and a constant gap of µm and (d) Hybrid design at gap sizes of 2, 4, and µm and a constant core size of 32 µm The insert for each image shows...

Ngày tải lên: 10/09/2015, 08:40

... Introduction 48 3. 2 Device Fabrication 50 3. 3 Results and Discussions 54 3. 3.1 Material Characterization: XPS and TEM 54 3. 3.2 Electrical Characterization of the ... Characterization of Interface State Density 33 2 .3. 1 Need for Electrical Characterization at an Elevated Temperature 33 2 .3. 2 Method of Extracting Interface State Density [109] 35 2 .3. 3 ... lattice constant of GaN, C 13 and C 33 are the elastic constants, and e31 and e 33 are piezoelectric constants With a linear interpolation between the physical properties of GaN and AlN, the lattice constant...

Ngày tải lên: 10/09/2015, 09:11

... 0.072 0.8 47@-3V - 2010 [2.15] WG PIN 1 .3 1.1 36 .8@-3V - 2010 [2.41] WG MSM 90 0.14 40@-2V - 2008 [2.42] ~10@25V ~15.6@~25V@ 1 .3 m ~12@~25V 34 0 2010 [2. 43] ~100@23V 16.8@~23V 5@~23V 105 2010 [2.44] ... 2005 [2 .34 ] NI PIN ~0.8 0.56 8.5@-1V - 2005 [2 .31 ] NI PIN RCE 0 .38 @-5V 0. 73 12.1@-3V - 2006 [2.14] NI PIN ~10 0.2 10@-1V - 2007 [2 .35 ] WG MSM 130 25@-6V - 2007 [2.19] WG PIN 0.9 0.87 7.5@-3V - 2007 ... ° C 25 nm Ge 730 nm 400 ° C 730 ° C 40 nm Ge 30 0 nm 400 ° C 670 ° C 100 nm Ge 1.2 μm 35 0 ° C 600 ° C 50 nm Ge 400 nm thin LT 550°C buffer μm 35 0 ° C 600 ° C 30 nm Ge μm 36 0 ° C 730 ° C 60 nm Ge...

Ngày tải lên: 10/09/2015, 15:47

... 7.2.2 Hollow fiber fabrication …………………………………………… 151 7.2 .3 Characterization …………………………………………………… 1 53 7 .3 Results and discussion……………………………… …………………… 1 53 7 .3. 1 Hollow fiber spinning and the separation ... ………………………………… 74 3. 2.1 Pure gas permeation …………………………………………………… 74 3. 2.2 Mixed gas permeation…………………………………………… …… 81 3. 3 Characterization of physical properties…………………………………… … 83 3 .3. 1 Field emission ... selection…………………………………………………… …. 13 1 .3. 2 Membrane formation and modification…………………………….…….20 1 .3. 2.1 Membrane formation …………………………………… ……20 1 .3. 2.2 Membrane modification………………………………….… ….25 1 .3. 3 Membrane module...

Ngày tải lên: 12/09/2015, 11:24

... Experimental setup 50 3. 3 Effects of oxidation, thermal annealing, and plasma treatment 51 3. 3.1 3. 3.2 Luminescent pictures 58 3. 3 .3 3.4 Photoluminescence spectra ... [29 ,30 ], ion implantation of Si+ into Si dioxide (SiO2) films [31 ,32 ], co-sputtering of Si and SiO2 [26 ,33 ], evaporation of Si monoxide (SiO) [34 ,35 ], pulsed-laser deposition (PLD) of Si [36 ,37 ], ... 20 2 .3 Results and discussion 24 2 .3. 1 2 .3. 2 Structure and composition of the deposited Si NC films 26 2 .3. 3 Photoluminescence spectra of the deposited Si NC films 35 2 .3. 4 2.4...

Ngày tải lên: 12/09/2015, 11:25

... Units and Europium Complex 62 3. 1 Introduction 62 3. 2 Experiment 63 3.2.1 Preparation and Characterization of the PKEu Copolymer 63 3.2.2 Device Fabrication and Characterization 64 3. 3 Results and ... derivatives including naphthalene [32 ], anthracene [32 , 33 ], tetracene [32 , 34 -36 ], pentacene [37 ], perylene [32 , 35 ], p-quaterphenyl [36 ], p-quinquephenyl [38 ] and some of their derivatives, such ... Science 2 93, 1746 (2001) [29] J C Scott, Science 30 4, 62 (2004) [30 ] Z Y Hua and G R Chen, Vacuum 43, 1019 (1992) [31 ] C U Pinnow and T Mikolajick, J Electrochem Soc 151, K 13 (2004) [32 ] S G Garrett,...

Ngày tải lên: 12/09/2015, 11:29

... phenomena 3. 3.2.7 3. 3 .3 Effect of H2 plasma annealing Electrical transport properties 89 93 3 .3. 3.1 Temperature-dependent resistivity 93 3 .3. 3.2 Temperature-dependent conductance 95 3. 3 .3. 3 Magnetoresistance ... properties 65 3. 3.2 Magnetic properties 67 3. 3.2.1 M-H curves 67 3. 3.2.2 ZFC, FC and TRM 70 3. 3.2 .3 High temperature phase 74 3. 3.2.4 Relaxation 80 3. 3.2.5 Ac susceptibility 81 3. 3.2.6 Our model ... (La0.7Sr0 .3) MnO3 3d-eg (Mn) 3d-t2g (Mn) 280 -38 0 3. 7 72-95 30 -35 Fe3O4 - 3d-t2g(Fe) 860 39 -85 36 -39 Tl2Mn2O7 Mn (t2g) Tl (6s) 120 66 40,41 (Co1-xFex) S2 Co (eg) - 100 - NiMnSb - Ni (eg) 730 Mn2VAl...

Ngày tải lên: 12/09/2015, 11:29

... 86 3. 3 .3 Experimental Set-up 86 3. 3.4 Chemical Analysis .87 3. 3.5 3. 4 Chemicals 85 Experimental Procedure 88 Results and Discussion 90 3. 4.1 3. 4.2 ... through the TMS Model .82 3. 2.5 Mean Pore Size and Pore Size Distribution Simulated from the Solute Transport Method 83 3 .3 Experimental 85 3. 3.1 3. 3.2 Composite Nanofiltration ... pressure ([NaCl] = 1.7 mol m -3, [Na2SO4] = 3. 4 mol m -3) 1 03 xiii Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes WANG KAI YU Figure 3. 14 Ion rejection in the...

Ngày tải lên: 12/09/2015, 11:29

... constants and a0 is the lattice constant AlN GaN InN PSP (C/m2) -0.081 -0.029 -0. 032 e 33 (C/m2) 1.46 0. 73 0.97 e31 (C/m2) -0.60 -0.49 -0.57 C 13 (GPa) 108 1 03 92 C 33 (GPa) 37 3 405 224 a0 (Å) 3. 112 3. 189 ... 30 1.8 2/1 30 250 87.5 30 12.2 2/2 30 250 89 55 18 .35 3/ 1 30 250 85 100 34 .3 1/1 30 0 43 3.2.6 Results and Discussions Group has samples included in the Table 3. 2, 2/1 and 2/2 Sample 2/1 has been ... polarization and is given by: PPE = a − a0 C e31 − e 33 13 a0 C 33 (2.22) where a is the lattice constant under strain, and a0 is the lattice constant of the relaxed material The constants e31 and e 33 are...

Ngày tải lên: 05/10/2015, 22:32

... devices 35 3. 3.1 Control of evaporation flux to reduce sidewalls 35 3. 3.2 Capping pads to improve electrical contact of structures 37 3. 3 .3 Angled evaporation for conformal step coverage 38 3. 3.4 ... AutoCAD and a schematic of the mask is shown in Figure 3. 3 Figure 3. 3 Schematic of mask design drawn using AutoCAD 25 Chapter Three: Fabrication and characterization of lateral spin valves 3. 2.1 .3 ... 40 3. 4 Characterization Techniques 3. 4.1 Scanning Electron Microscope 42 42 iii 3. 4.2 Room temperature magnetoresistance measurement 43 3.4 .3 Low temperature magnetoresistance measurement 43 3.5...

Ngày tải lên: 05/10/2015, 22:32

... 74, 39 33- 3 935 (1999) [51] G Subramania, R Biswas, K Constant, M M Sigalas, and K M Ho, Phys Rev B 63, 235 111 (2001) [52] Q B Meng, Z Z Gu, O Sato, and A Fujishima, Appl Phys Lett 77, 431 3- 431 5 ... (1998) [33 ] O D Velev, T A Jede, R F Lobo, and A M Lenhoff, Nature 38 9, 447-448 (1997) [34 ] O D Velev, T A Jede, R F Lobo, and A M Lenhoff, Chem Mater 10, 35 97 -36 02 (1998) [35 ] B T Holland, C ... 57, 37 01 -37 05 (1998) [30 ] R Biswas, M M Sigalas, G Subramania, C M Soukoulis, and K M Ho, Phys Rev B 61, 4549-45 53 (2000) [31 ] A Imhof and D J Pine, Nature 38 9, 948-951 (1997) 22 [32 ] A Imhof and...

Ngày tải lên: 05/10/2015, 22:32