Electronic devices and circuits

www.elsolucionario.net www.elsolucionario.net www.elsolucionario.net Dr K Lal Kishore Ph.D, MIEEE, FIETE, MISTE, MISHM Registrar and Professor of Electronics & Communication Engineering, Jawaharlal Nehru Technological University, Kukatpally, Hyderabad - 500 072 SSP BS Publications 4-4-309, Giriraj Lane, Sultan Bazar, Hyderabad - 500 095 A P Phone: 040-23445688 www.elsolucionario.net Electronic Devices and Circuits www.elsolucionario.net Copyright © 2008 by publisher Published by : SSP BS Publications - 4-4-309, Giriraj Lane, Sultan Bazar, Hyderabad - 500 095 AP Phone: 040-23445688 Fax: 040 - 23445611 e-mail: contactus@bspublications.net www.bspublications.net Printed at Adithya Art Printers Hyderabad ISBN: 81-7800-167-5 www.elsolucionario.net All rights reserved No part of this book or parts thereof may be reproduced, stored in a retrieval system or transmitted in any language or by any means, electronic, mechanical, photocopying, recording or otherwise without the prior written permission of the publishers www.elsolucionario.net CONTENTS BriefHistory ofElectronics Chapter Electron Dynamics and CRO 1-39 1.1 Electron Dynamics 1.2 Motion of Charged Particles in Electric and Magnetic Fields 1.3 Simple Problems Involving Electric and Magnetic Fields Only 24 1.4 Principles of CRT 26 1.5 Deflection Sensitivity 29 1.6 Applications ofCRO 36 Summary 36 Objective Type Questions 37 Essay Type Questions 38 Multiple Choice Questions 38 Chapter2 Junction Diode Characteristics 39-134 2.1 Review of Semiconductor Physics 40 2.2 Energy Band Structures 61 2.3 Conduction in Semiconductors 62 2.4 Conductivity of an Intrinsic Semiconductor 66 www.elsolucionario.net Contents Symbols 2.5 Donor Type or n-Type Semiconductors 67 2.6 Acceptor Type or p-Type Semiconductors 68 2.7 Ionization Energy 68 2.8 Holes and Electrons 68 2.9 Mass Action Law 70 2.10 Law of Electrical Neutrality 70 2.11 The Fermi Dirac Function 75 2.12 Total Current in a Semiconductor 84 2.13 Einstein Relationship 90 i Continuity Equation 90 2.15 The Hall Effect 92 2.16 Semiconductor Diode Characteristics 96 2.17 The p-n Junction Diode in Reverse Bias 98 2.18 The p-n Junction Diode in Forward Bias 98 2.19 Band Structure of an Open Circuit p-n Junction 99 2.20 The Current Components in a p-n Junction Diode 102 2.21 Law of the Junction 103 2.22 Diode Current equation 104 2.23 Volt-Ampere Characteristics of a p-n Junction diode 105 2.24 Temperature Dependance ofp-n Junction Diode Characteristics 107 2.25 Space Charge or Transition Capacitance CT 108 2.26 Diffusion Capacitance, CD 111 2.27 Diode Switching Times 113 2.28 Break Down Mechanism 118 2.29 Zener Diode 119 2.30 The Tunnel Diode : 2.31 Varactor Diode .' 123 0' ••••••••••••••• 120 Summary : 129 Objective Type Questions 130 Essay Type Questions 13 Multiple Choice Questions 132 www.elsolucionario.net www.elsolucionario.net www.elsolucionario.net Chapter 3.1 Rectifiers 136 3.2 Half-Wave Rectifier 136 3.3 Full Wave Rectifier ( FWR ) 146 3.4 Bridge Rectifiers 150 3.5 Comparison of Rectifier Circuits 151 3.6 Voltage Doubler Circuit 152 3.7 Inductor Filter Circuits 152 3.8 Capacitor Filter 157 3.9 LC Filter 161 3.10 CLC or 1t Filter 165 3.11 Multiple LC Filters 169 3.12 Introduction to Regulators 173 3.13 Terminology 182 Summary 183 Objective Type Questions 183 Essay Type Questions 184 Multiple Choice Questions 184 Chapter Transistor Characteristics 185-266 4.1 Bipolar Junction Transistors ( BJT's ) 186 4.2 Transistor Construction 190 4.3 The Ebers-Moll Equation 191 4.4 Types of Transistor Configurations 192 4.5 Convention for Transistors and Diodes 202 4.6 Field Effect Transistor (FET) 213 4.7 FET Structure 215 4.8 FET Operation 219 4.9 JFET Volt-Ampere Characteristics 222 www.elsolucionario.net Rectifiers, Filters and Regulators 135-184 4.10 Transfer Characteristics of FET 224 4.11 FET Small Signal Model 228 4.12 FET Tree 233 4.13 The Depletion MOSFET 240 4.14 CMOS Structure (Complementary MOS) 243 4.15 Silicon Controlled Rectifier 246 4.16 Unijunction Transistor (UJT) 251 4.17 LED's 255 4.18 Photo Diodes 255 4.19 Photo Transistors 256 Summary 257 Objective Type Questions 258 Essay Type Questions 259 Multiple Choice Questions 260 Chapter Transistor Biasing and Stabilization 261-312 5.1 Transistor Biasing 268 5.2 Fixed Bias Circuit or (Base Bias Circuit) 270 5.3 Bias Stability 271 5.4 Thermal Instability 271 5.5 Stability Factor'S' for Fixed Bias Circuit 272 5.6 Collector to Base Bias Circuit 273 5.7 Self Bias or Emitter Bias Circuit 276 5.8 Stability Factor'S' for Self Bias Circuit 277 5.9 Stability Factor S I 278 5.10 Stability Factor S" for Self Bias Circuit 280 5.11 Practical Considerations 280 5.12 Bias Compensation 281 5.13 Biasing Circuits For Linear Integrated Circuits 284 www.elsolucionario.net www.elsolucionario.net www.elsolucionario.net 5.14 Thermistor and Sensistor Compensation 285 5.15 Thermal Runaway 286 5.16 Stability Factor S" for Self Bias Circuit 292 5.17 FETBiasing _ 298 5.18 Basic FET Circuits 302 Summary 309 Objective Type Questions 310 Essay Type Questions 310 Chapter Amplifiers 313-380 6.1 Introduction 314 6.2 Black Box Theory 314 6.3 Transistor Hybrid Model 318 6.4 Transistor in Common Emitter Configuration 318 6.5 Determination of h-Parameters From the Characteristics of a Transistor 319 6.6 Common Collector Configuration ( CC ) 321 6.7 Hybrid Parameter Variations 322 6.8 Conversion of Parameters From C.B to C.E 323 6.9 Measurement of h-Parameters 325 6.10 General Amplifier Characteristics 327 6.11 Analysis of Transistor Amplifier Circuit Using h-Parameters 330 6.12 Comparison of the CE, CB, CC Configurations 334 6.13 Small Signal Analysis of Junction Transistor 337 6.14 High Input Resistance Transistor Circuits 354 6.15 Boot Strapped Darlington Circuit 358 6.16 The Cascode Transistor Configuration 361 6.17 The JFET Low frequency Equivalent Circuits 365 6.18 Comparison of FET and BJT Characteristics 369 www.elsolucionario.net Multiple Choice Questions 311 www.elsolucionario.net 6.19 R C Coupled Amplifier 370 6.20 Concept of fa' fp and fT 373 Summary 375 Objective Type Questions 376 Essay Type Questions 377 Multiple Choice Questions 378 Chapter 7.1 FeedbackAmplifiers 382 7.2 Classification ofAmplifiers 382 7.3 Feedback Concept 385 7.4 Types of Feedback 387 7.5 Effect of Negative Feedback on Transfer Gain 387 7.6 Transfer Gain with Feedback 392 7.7 Classifaction of Feedback Amplifiers 396 7.8 Effect of Feedback on Input Resistance 397 7.9 Effect of Negative Feedback on Ro 7.10 400 Analysis of Feedback Amplifiers 406 Summary 424 Objective Type Questions 425 Essay Type Questions 426 Multiple Choice Questions 427 Chapter Oscillators 429-453 8.1 Oscillators 430 8.2 Sinusoidal Oscillators 433 8.3 Barkhausen Criterion : 433 8.4 R - C Phase-Shift Oscillator (Using JFET) 434 8.5 Transistor RC Phase-Shift Oscillator 437 www.elsolucionario.net FeedbackAmplifiers 381-428 www.elsolucionario.net 490 19 0.912 26.3 35.9 8.05 20 0.813 33.2 32 10.1 21 0.723 41.9 28.5 12.8 22 0.644 52.8 25.3 16.1 23 0.573 66.7 22.6 20.3 24 0.511 83.9 20.1 25.7 25 0.455 106 17.9 32.4 26 0.405 134 15.9 41 27 0.361 168 14.2 51.4 28 0.321 213 12.6 64.9 29 0.286 267 11.3 81.4 30 0.255 337 10 103 31 0.227 425 8.9 130 32 0.202 537 164 33 0.180 676 7.1 206 34 0.160 855 6.3 261 35 0.143 1071 5.6 329 www.elsolucionario.net APPENDICES www.elsolucionario.net www.elsolucionario.net www.elsolucionario.net 492 Electronic Devices and Circuits Chapter-1 V I &= - V = f = a = Circle d m T = r < 12 Nickel Cylinder with a coating of Barium and Strontium 13 Sawtooth Wave form 14 The deflection produced when the deflecting voltage is I V 15 The deflection produced when the deflectin~magnetic field intensity is I wblm Vim or V/cm ~2X:XV B x I x L Newtons Ee m 16 Electron volt 21tm 17 NIT Be 18 Parabolic path mv Be 19 3000 20 BIL /xD 21 Circular 22 Electrostatic 23 Electrostatic 24 Lissajous SE = 2sV emN g; /xL 2m x JVa S = 10 Graticules 11 Acquadag Coating M mO 25 ~I_ V 2 C Answers to Multiple Choice Questions d a a a d 10 b c d a c www.elsolucionario.net Answers to Objective Type Questions www.elsolucionario.net 493 Answers Chapter-2 Answers to Objective Type Questions < 1028/m and> 107 electrons/m 10 Q-cm J = cr.E 18 Impurities added in, n 19 Immobile, Space J = (nell + pell ).E.e n p Eo = l.leV 20 E 21 E n x p = n2 i 3/2 22 P(0) KTln( N~~A o 0.5eV o n n oc T v I (e1'\VT_1) I 23 NA + n =ND + P 24 Decreases 10 Decreases as V 11 Valance Band 12 Con'duction Band 13 It gets doubled for every 10 rise in temperature 14 V = 0.026V e I www.elsolucionario.net o Germanium = O.IVand = 0.5V Silicon mcreases 25 26 27 I o High T 28 15 T 11,600 29 16 Insulator 17 Lower than, Conduction 30 Negative Resistance Characteristic Answers to Multiple Choice Questions a b d a d a c b b 10 c 11 b 12 c 13 a 14 c 15 d 16 d 17 b 18 b www.elsolucionario.net Electronic Devices and Circuits 494 Chapter-3 Answers to Objective Type Questions AC to unidirectional flow Unidirectional flow to DC Ripple Factor = 1.21 Inductance varies with current permissable limits Good regulation and conduction angle of 180 for the diode Answers to Multiple Choice Questions a c d c www.elsolucionario.net 111 www.elsolucionario.net 495 Answers Chapter-4 I NPN the direction of conventional current when the E-8 Junction is forward biased h fe and hFE Large Signal Current Gain IS 16 Small Signal Current Gain 17 J 8, 19 20, IpC 13 14 IpE ::1 a = 13* y a 22 23, P = (I + 13) Change in base width with the change in the base voltage V BE MOSFET UNIPOLAR gain band width product is less C,B,E Pinch off Voltage Pinch off Voltage few tens of ohms to few hundred ohms J 24, IE: a 7, 13= {I-a} 10 Ic = I 13 I B + (13 + I )I CBO V 26 I 27 the saturation value of the drain current when gate is shorted to source i.e., V GS = voltage variable /-l = rd * gm JFET Depletion MOSFET ( DMOSFET ) GS leBo - CEO - {I-a} l3' = 8I e I 8I B II =(J_~)2.Vp a 25, VC'E=K Small Signal Common Emitter Forward Current Gain 28 29 30 31 IDSS(I- VGS)2 Vp = DS Answers to Multiple Choice Questions b a c d c a c d a 10 b 11 d 12 a 13 b 14 c 15 d 16 b 17 a 18 c 19 d 20 a www.elsolucionario.net Answers to Objective Type Questions www.elsolucionario.net 496 Electronic Devices and Circuits Chapter- Answers to Objective Type Questions Quiescent point, Q - point, Biasing point Ico' V BE' The centre of the active region on the load line VCE = 0.5 Vee' Base bias circuit Emitter bias, semiversal bias or Voltage divider bias circuit aleo 10 II J3 = K, VAl = K I S ' =ale -aV BE I", a~ 13 ale I s - aiel S" = =K,J3=K S= S ~ VSE = K, leo = K I-P(~:;) l+~( RE www.elsolucionario.net ) RE +RB 12 2.5mv/oC 13 Negative (NTCR) 14 Sensistors 15 Oxides ofNi, Mn, Co Answers to Multiple Choice Questions c a b b b 10 d d a a c www.elsolucionario.net Answers Chapter-6 n, mhos and constants 10 the units of different parameters are not the same 11 Decreases 12 Low hllll +h 12V 13 Large h21 I I + h22 V 14