Yan, The effect of La doping concentration on the properties of zinc oxide films prepared by the solegel method, J. Wang, Optical and structural properties of Sr-doped ZnO thin films, Mate[r]
(1)Original Article
The effect of strontium doping on structural and morphological
properties of ZnO nanofilms synthesized by ultrasonic spray pyrolysis
method
A Ouhaibia, M Ghamniaa,*, M.A Dahamnia, V Heresanub, C Fauquetb, D Tonneaub
aLaboratoire LSMC, Departement de Physique, Universite d'Oran Ahmed Ben Bella, 31100 Oran, Algeria bCentre CINaM, Campus de Luminy, Universite d'Aix-Marseille, Marseille 13009, France
a r t i c l e i n f o
Article history:
Received 20 December 2017 Received in revised form 26 January 2018 Accepted 26 January 2018 Available online 16 February 2018 Keywords:
Ultrasonic spray pyrolysis Sr-doped ZnO
Morphology study Optical properties
a b s t r a c t
Pristine and strontium doped ZnO nanometric films were successfully synthesized on heated glass substrates by the ultrasonic spray pyrolysis technique The samples were characterized by means of X-ray diffraction (XRD), Atomic Force Microscope (AFM), UVevisible spectroscopy and photoluminescence (PL) X-ray diffraction patterns confirmed the hexagonal (wurtzite) structure, where the most pronounced (002) peak indicates the preferential orientation along the c-axis perpendicular to the sample surface The intensity of this peak was increased rapidly from thefirst doping of 1% and its position was shifted toward higher angles under Sr-doping effect For the used doping range of 1e5%, the Sr-doping at 3% attracted an especial attention At this concentration, the particular transformation in the surface morphology of doped ZnOfilms was observed The surface became granular and rough by expanding the crystallites' size From optical measurements, transmittance and PL spectra were found to be sensitive to Sr-doping, where two different behaviors were observed before and after 3% of Sr-doping
© 2018 The Authors Publishing services by Elsevier B.V on behalf of Vietnam National University, Hanoi This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/)
1 Introduction
Pristine and doped zinc oxide (ZnO) is among the most studied materials because of its interesting characteristics such as its easy synthesis, its non toxicity, its chemical stability, its suitability for doping with different metals ZnO has several favourable properties such as good transparency, strong room temperature luminescence, high electron mobility In materials science, ZnO is a n-type semi-conductor with a wide direct bandgap (3.37 eV), a large excitation binding energy (60 meV) and high transmission in the visible range For these important physical properties, ZnO is used successfully in a variety of applications such as in electronics, in optoelectronic
de-vices, in solar cells, in light emitter diodes[1e5]
ZnO thinfilms can be easily nanostructured and synthesized by
several techniques The growth techniques must be physical as
sputtering, evaporation, pulsed laser deposition, … [6e8] or
chemical as solegel, chemical vapour deposition (CVD),
metal-organic CVD, hydrothermal and spray pyrolysis…[9e13] Among
these chemical synthesis methods, we explored in this paper, the
ultrasonic spray pyrolysis technique for its low cost and especially
for its simplicity to implement for fabricating oxide thinfilms of
good qualities The crystalline quality, through the control in composition and the synthesis in large scale on substrates, is easily obtained by this technique In order to improve some physical properties of ZnO, lot of works has been carried out on the doping
of ZnO thinfilms ZnO has often been doped with metal ions such as
Mn, Al, Ni[14e16] It has been shown that the ferromagnetism, the
magnetism, the performance of organic solar cells or the conduc-tivity related to the structural, optical and electrical properties are improved after having doped ZnO
It is in this context that the present paper is inscribed It is about the synthesizing and characterizing of strontium (Sr) doped ZnO A few work were carried on the strontium doped ZnO obtained by chemical synthesis or physical growth We can mention the
work of K Pradeev Raj et al [17] on SreZnO obtained by the
co-precipitation method, the work of Xu et al.[18]who used the
solegel method and the works of Raghavendra et al.[19,20]who
studied Sr-ZnO using the spray pyrolysis synthesize Sr is an * Corresponding author LSMC Laboratory, Oran University, 31000, Oran, Algeria
E-mail address:mghamnia@yahoo.fr(M Ghamnia)
Peer review under responsibility of Vietnam National University, Hanoi
Contents lists available atScienceDirect
Journal of Science: Advanced Materials and Devices
j o u r n a l h o m e p a g e : w w w e l s e v i e r c o m / l o c a t e / j s a m d
https://doi.org/10.1016/j.jsamd.2018.01.004
(2)element which has a large cationic radius (1.18 Å) and a heavy atomic weight (87.62 g) in comparison with zinc (the ionic radius of 0.6 Å and the atomic weight of 65.4 g) Due to this size effect (the
radius ratio RSr=RZn¼ 1.96), doping with Sr is somehow difficult to
obtain It induces changes in structural, morphological and optical properties of ZnO In this work, we show that the strontium doping
of concentrations ranging from to 5% caused a significant
modi-fication of the surface state Experimental
Pristine and Sr-doped ZnO nanofilms were synthesized using
the ultrasonic spray pyrolysis technique As reported in reference
[21], this technique differs slightly from the classical spray
pyrol-ysis We dissolved zinc acetate di-hydrate (Zn (CH3OO)2, 2H2O) salt
as precursor of the ZnO particles in 100 ml of methanol for
obtaining a transparent solution concentred at 0.3 M L1 To obtain
ZnO doped with strontium (Sr), we added to the 0.3 M L1solution
different amounts of strontium chloride hexahydrate (SrCl2, 6H2O)
In this way, we got the following doping: 1%, 2%, 3%, 4%, and 5% The resulting aqueous solution was stirred for 24 h before spraying it onto heated glass substrates Before spraying and in order to eliminate residual contamination caused by air contact, the glass substrates were previously cleaned in diluted acetone and rinsed in deionised water for several cycles After the chemical cleaning, the
samples were dried with nitrogen gas In Fig we present a
simplified schematic of the ultrasonic spray pyrolysis assembled by
us After having vaporized ultrasonically the solution, the vapour is
sprayed and deposited on glass substrates heated at 350 C and
held at a 20 cm from the spray nozzle With the deposit time, ZnO films were thus prepared
The structural characteristics of the pristine and Sr-doped ZnO
films were examined by x-ray diffraction using Cu-Kasource of
wavelength of 1.54 Å The state of the surface morphology was characterized by AFM in a tapping mode The optical properties
were studied at room temperature by using uvevisible
spectros-copy and photoluminescence (PL) Results and discussion
3.1 Structural and morphological characterization of ZnO and
Sr-ZnO thinfilms
The XRD patterns of pristine and Sr-doped ZnO are shown in
Fig 2(a) From thisfigure, six orientations of different intensities
can be identified: (100), (002), (101), (102), (110) and (103)
Ac-cording to JCPDS 036-1451 card, these peaks indicate the hex-agonal (wurtzite) structure of ZnO As we can observe from these spectra, the (002) and (101) planes are the most pronounced As the (002) peak is the most intense, the ZnO growth is preferen-tially made in this direction along the c-axis perpendicular to the sample surface But its intensity does not follow the increase in Sr-doping concentration It is observed to be increased rapidly
from thefirst doping (1%) and then it slowly decreases (Fig 2(b))
till 3% of Sr-doping and increases again from to 5% This may be
explained by the size effect of strontium (RSr/RZn ratio ¼ 1.96)
which is probably at the origin of the formation of several ZnO nanocrystallite phases With Sr-doping, the (002) peak shifts
to-wards high diffraction angles 2qas observed inFig 2(c) This shift
moves up till 3% of Sr-doping whereD(2q)¼ 0.12and it returns
toward low angles for and 5% XRD signal shows no additional
peak which may suggest that Sr2ỵions go to the regular Zn sites
in the ZnO The used concentrations of strontium from to 5% did not form a new compound and we attribute the shift of the (002) peak, the instability of its intensity and its up and down behaviour to the change of the crystallinity of Sr-ZnO The method of preparation may also contribute to this perturbation of
the (002) peak but its effect is not significant in this study As
reported previously in references [22e25], the difference in
atomic size provokes changes in the density of defects, induces stress, lattice distortion and leads to the reduction of oxygen
vacancies[25] The effect of Sr-doping is also responsible for the
changes in the ZnO lattice parameters as shown inTable
According to the values listed inTable 1corresponding to the
(002) peak, c decreases slightly with increasing the Sr-doping con-centration from to 3% and increases for and 5% Sr-doping This decrease/increase of the c lattice parameter is consistent with the displacement of the (002) peak and the variation of its intensity To better understand these, we determine the average grain size (D)
from the XRD pattern of the (002) peak using the DebyeeScherrer's
formula[26]
D¼b0:9coslq (1)
where l is the wavelength of X-ray, b is the full-width half
maximum (FWHM) of the XRD peak, andqis the diffraction angle
The estimated values of ZnO particle sizes are summarized in
Table It is clearly seen that the grain size of ZnO increases from
to 3% of Sr-doping and decreases for 4e5% In general, the doping
reduces the surface roughness and consequently the size of ZnO particles must decrease; it is not the case here and indeed, the Sr-doping was observed to play an important role in the ZnO
struc-turedfilms The 3% Sr-doping particularly attracts our attention
where we can say that the Sr-ZnO films have two behaviours
delimited by the 3% doping: a behaviour for a doping situated be-tween and 3% (where c was decreased and the grains size increased) and a second behaviour for and 5% of Sr-doping (c was increased and the grains size decreased) This is clearly observed in
the AFM analysis whose results were discussed just below (Fig 4),
showing that the roughness present also two behaviours delimited by the 3% Sr-doping
Surface morphology was characterized with atomic force mi-croscope (AFM, Model Dimension Edge of Bruker) operating at room temperature in a tapping mode, and the images were treated
using WSxM software [27] We have used the scanning area
3mm 3mm for the study of surface morphology AFM images were
acquired with a resolution of 512 512 pixels The AFM analysis
allows us to determine the surface roughness The roughness is
defined either by the mean square roughnesss(rms) or the average
Fig Simplified scheme of the ultrasonic pyrolysis technique
(3)roughnesssa These two roughnesses are defined by the following
expressions[28]:
srmsị ẳ PN
iẳ1Zi Zavgị2 N
!1
(2)
and
sa¼ PN
iẳ1Zi Zavgị
N (3)
where N is the number of points, Ziis the number of ith point of Z and
Zavg is the average value of Z These two expressions of the
rough-nesses were treated by WsXM software and their profiles were
extracted from AFM images as shown inFig 3(a) and (b) Thisfigure
shows the examples of pristine and 5% Sr-doped ZnOfilms where
the roughnesssrms is determined to be and 75 nm, respectively
. . . . . . . .
Fig (a) XRD spectra of pristine and Sr-doped ZnOfilms (b) Profile of the (002) peak intensity (c) Shift of the (002) peak under Sr-doping content variations
Table
Determination of the lattice parameters a, c and the grain size from XRD patterns for pristine and Sr-doped ZnOfilms
Sr-doping concentration (%) Parameter a (Å) Parameter c (Å) Grain size (Å)a Cluster size (nm)b
0 3.2506 5.2128 23.39 40
1 3.2486 5.2084 24.53 150
2 3.2466 5.2010 26.23 180
3 3.2474 5.1996 28.22 200
4 3.2516 5.2090 27.57 172
5 3.2520 5.2098 27.81 153
(4)The AFM characterization of the pristine ZnOfilm revealed ho-mogeneous and continuous surface uniformly distributed
nano-metre sized grains where the surface roughness srms is
determined to be ~4 nm The state of the surface changed under
Sr-doping effect and the ZnO films became granular with irregular
ZnO particles and somewhat porous As shown inFig 4(c), the 3%
Sr-concentration affected noticeably the surface morphology where ZnO nanoparticles agglomerated on the surface and formed flower-like clusters The clusters grew with increasing Sr concen-tration from to 3% and became large-sized grains covering partially the surface and reducing thus the roughness for 3% doping The increase and decrease of the roughness with
Sr-doping (Fig 5) are in agreement with what we have observed on
the grain size determined from the (002) XRD peak and especially on the shift of this peak at the 3% Sr-doping Overall, the change on the surface morphology of ZnO was observed as a result of the Sr-doping effect In order to complete the study of the surface
morphology, the particle size of pristine and doped ZnO thinfilms
were evaluated by the WSxM software analysis According to the
calculated grain size and as reported inTable 1, the cluster size is
40 nm for pristine ZnO, 150 nm for 1%, 180 nm for 2%, 200 nm for 3%, 172 nm for 4%, and 153 nm for 5% Sr-doping We also observed that the 3% Sr-doping is the limit between two different behaviours
of the ZnO films In the doping range 0e3%, the cluster size
increased whereas it decreased for and 5% Sr-doping The in-creases in size of ZnO particles may be due to Sr ions that
substituted into Zn2ỵsites We recall that the Sr2ỵradius is greater
than that of Zn2ỵ, so the incorporation of Sr2ỵdistorts the lattice
and creates supplementary structure defects that are responsible for changes in the morphology and structure of ZnO surface
prob-ably composed of several phases.Fig 4(b), (d) and (f) represent the
variation of the z-height as a function of the Sr doping These
profiles reflect well the state of the surface and its roughness
3.2 Optical properties
3.2.1 Uvevisible analysis
The optical properties of the pristine and Sr-doped ZnOfilms
were determined from transmission measurements in the range of
300e1400 nm The transmittance spectra are shown inFig It can
Fig AFM images and roughness profile (a) Pristine ZnO films, (b) roughness profile for pure ZnO films withsrms¼ nm (c) Sr-doped ZnO at 5%, (d) roughness profile with srms¼ 75 nm
(5)(6)be seen that all the ZnOfilms show a high transmittance in the visible region The visible transmission is ranging in the interval
88e92.5% The increase of Sr-doping induces a displacement of the
absorption edge towards the lower wavelengths around 385 nm in the uv region The shift in the absorption threshold may be due to the scattering of the light by the increasing of the roughness surface from to 3% Sr-doping concentration For the 4% Sr-doping, the decrease of the roughness was probably responsible for the improvement of optical transmittance and for the change of the optical gap discussed bellow A slight decrease of the transmittance yield was observed from pristine to Sr-doped ZnO This decrease can be ascribed to the effect of the incorporation of Sr-atoms which induced changes in the homogeneity of the surface morphology caused by the apparition of porous surface areas with agglomera-tion of some ZnO nanocrystallites as revealed from the AFM analysis
The analysis of the transmission spectra allows us to access the
calculation of the optical gap of pristine and Sr-doped ZnOfilms
using the following relation of Tauc[29]:
(ahn)2¼ A(hne Eg), (4)
whereais the absorption coefficient, A is a parameter depending
on the transition probability, h Planck constant,v the frequency of
the incident photons.ais determined from the relationship:
a¼1 dln
T
(5)
T is the transmittance of thefilm and d is the film thickness
In the plot of the relation (6) inFig 7, we determine the gap by
extrapolation of the linear part of the curve (ahn)2and its
inter-section with the energy axis gives the value of the bandgap
The examples are given for the undoped ZnOfilm and for the 5%
Sr-doped ZnO film The determined gap values for the pristine
and Sr-doped ZnOfilms are listed inTable As shown inFig 8, the
band gap of ZnO is found to decrease from 3.263 to 3.264 eV for to
Fig Variations of the roughnesssrms and averagesawith Sr doping
Fig Transmittance spectra of pristine and Sr-doped ZnOfilms
Fig Determination of the band gap value: (a) Pristine ZnOfilm and (b) 5% Sr-doped ZnOfilm
Table
Determination of the band gap values using the relation (ahn)2¼ A (hne Eg).
Sr-doping concentration (%) Band gap value (eV)
Solid ZnO 3.370
0 3.267
1 3.263
2 3.264
3 3.285
4 3.286
5 3.285
(7)2% Sr-doping and it enhances rapidly to 3.285 eV when Sr-doping reaches 3% Eg decreases again for the 5% Sr-doping and stabilizes at 3.285 eV This behaviour at 3% Sr-doping may be attributed to the
modification of structural defects caused by the presence of Sr2ỵin
the ZnO matrix As discussed above, the substitution of Sr2ỵ for
Zn2ỵcreates non-linear defects due to the difference in atomic size
and reduces oxygen vacancies as confirmed below by the
photo-luminescence analysis
3.2.2 Photoluminescence analysis
Photoluminescence (PL) is achieved in this study to complete
the optical investigation of Sr-doped ZnOfilms It helps us to
un-derstand, analyze, and refine more effectively the effect of Sr
doping on the structure of these films PL measurements were
recorded at room temperature in the wavelength range
200e1000 nm.Fig 9displays PL spectra with their deconvolutions
of pristine and Sr-doped ZnO films PL spectra are composed of
three principal peaks for all the samples One peak appearing in the uv region is detected at 398 nm (3.11 eV) and is usually attributed to Fig Plot of Eg versus Sr-doping concentration
400 500 600 700 800 900 0 6000 12000 18000 ). u. a( yti s ne t nI Wavelength (nm) Pristine ZnO (a)
400 500 600 700 800 900 0 1000 2000 3000 ). u. a( yti s ne t nI Wavelength (nm)
1% Sr-doped ZnO
(b)
400 500 600 700 800 900 0
500 1000
1500 2% Sr-doped ZnO
). u. a( yti s ne t nI Wavelength (nm) (c)
400 500 600 700 800 900 0 600 1200 1800 ). u. a( yti s ne t nI Wavelength (nm)
3% Sr-doped ZnO
(d)
400 500 600 700 800 900
0 900 1800 2700 ). u. a( yti s ne t nI Wavelength (nm)
4% Sr-doped ZnO
(e)
400 500 600 700 800 900 0 1000 2000 3000 4000 ). u. a( yti s ne t nI Wavelength (nm)
5% Sr-doped ZnO
(f)
(8)the recombination of free excitons It corresponds to the near-band
edge transition (NBE) of ZnO[28,29] The other two peaks appear in
the visible region and are located toward 500 nm (2.48 eV) and 700 nm (1.77 eV) The blue emission (500 nm) may be due to the oxygen vacancies and results from the recombination between the electron localized at the oxygen defect and the hole in the valence band The large red emission peak detected around 700 nm is probably related to stoichiometry defect due to the technique
synthesis of ZnO thinfilms
From the PL spectra, we note that the incorporation of strontium in the host ZnO matrix reduced 25% of the PL intensity signal for all samples doped At the 3% Sr-doping, the blue emission disappeared completely and the red emission was at the lower intensity (Fig 9(d)) The intensity of PL signal enhanced again for 4% and 5% Sr doping concentrations This is in full agreement with the results
observed from the XRD, AFM and uvevis measurements The Sr
doping concentration at 3% is the limit where the structural and morphological changes of the system Sr-ZnO take place with respect to reducing of the density defects related to the oxygen
vacancies and to the interstitial sites occupied initially by Zn2ỵ The
crystalline quality of ZnOfilms was improved for the 3% Sr-doping
4 Conclusion
The undoped and Sr-doped ZnO nanofilms were successfully
synthesized on glass substrates via the ultrasonic spray pyrolysis technique From the X-ray diffraction analysis, the preferred (002)
oriented hexagonal phase of ZnO was confirmed for all samples
studied Sr-doped ZnO thinfilms showed an increase in intensity
for this peak for Sr-doping between and 3%, whereas it decreased beyond 3% This peak was shifted toward the high diffraction angle
(2q) The behaviour of Sr-doping effect before and after the 3% Sr
doping were also revealed in the AFM analysis and the optical study The morphology of Sr-doped ZnO surface became rough and composed of crystallite clusters of different sizes which were
enhanced in the Sr-doping range 1e3% and decreased for and
5% The transmittance signal was shifted toward low wavelengths, while the photoluminescence intensity decreased The PL peak of the blue emission near 500 nm disappeared totally at a 3% Sr-doping concentration This doping concentration is considered as a doping limit in the transformations of the Sr-doped ZnO films and on its crystalline quality improvement
Acknowledgements
The authors thank a lot A Ranguis from CINaM of Aix-Marseille University (France) for some experimental measurements and R Baghdad from Tiaret University (Algeria) for the samples' syn-thesis The authors thank also the Algerian-French cooperation through the Tassili 14MDU915 project for the funding support References
[1] T Wang, H Wu, H Zheng, J.B Wang, Z Wang, C Chen, Y Xu, C Liu, Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3
inter-layer, Appl Phys Lett 102 (14) (2013),https://doi.org/10.1063/1.4801761, 141912
[2] R Navamathavan, R Nirmala, C.R Lee, Effect of NH3plasma treatment on the
device performance of ZnO based thinfilm transistors, Vacuum 85 (9) (2011) 904e907,https://doi.org/10.1016/j.vacuum.2011.01.008
[3] M Ortel, S Pittner, V Wagner, Stability and spacial trap state distribution of solution processed ZnO-thinfilm transistors, J Appl Phys 113 (15) (2013),
https://doi.org/10.1063/1.4801892, 154502
[4] B.Y Oh, M.C Jeong, T.H Moon, W Lee, J.M Myoung, J.Y Huang, D.S Seo, Transparent conductive Al-doped ZnOfilms for liquid crystal displays, Appl Phys 99 (12) (2006), 124505
[5] Q Wan, Q.H Li, Y.J Chen, T.H Wang, X.L He, J.P Li, C.L Lin, Fabrication and ethanol sensing characteristics of ZnO nano wire gas sensors, Appl Phys Lett 84 (2004) 3654e3656
[6] S.H Ko, D Lee, H.W Kang, K.H Nam, J.Y Yeo, S.J Hong, C.P Grigoropoulos, H.J Sung, Nano forest of hydro thermally grown hierarchical ZnO nano wires for a high efficiency dye-sensitized solar cell, Nano Lett 11 (2011) 666e671 [7] Y.R Ryu, T.S Lee, J.A Lubguban, H.W White, Y.S Park, C.J Youn, ZnO devices: photodiodes and p-typefield-effect transistors, Appl Phys Lett 87 (2005), 153504
[8] W Peng, Y He, C Wen, K Ma, Surface acoustic wave ultraviolet detector based on zinc oxide nano wires sensing layer, Sens Actuators A Phys 184 (2012) 34e40
[9] J.B.K Law, J.T.L Thong, Simple fabrication of a ZnO nano wire photo detector with a fast photoresponse time, Appl Phys Lett 88 (2006), 133114 [10] R Yousefi, F Jamali-Sheini, M Cheraghizade, S Khosravi-Gandomani,
A Sa
́
aedi, Nay M Huang, W Jefrey Basirun, M Azarang, Enhanced visible-light photocatalytic activity of strontium-doped zinc oxide nanoparticles, Mater Sci Semicond Process 32 (2015) 152e159
[11] N.L Tarwal, A.V Rajgure, J.Y Patil, M.S Khandekar, S.S Suryavanshi, P.S Patil, M.G Gang, J.H Kim, J.H Jang, A selective ethanol gas sensor based on spray-derived AgeZnO thin films, J Mater Sci 48 (2013) 7274e7282
[12] J.T Chen, J Wang, F Zhang, G.A Zhang, Z.G Wu, P.X Yan, The effect of La doping concentration on the properties of zinc oxidefilms prepared by the solegel method, J Cryst Growth 310 (2008) 2627e2632
[13] L Xu, S Xiao, C Zhang, G Zheng, J Su, L Zhao, J Wang, Optical and structural properties of Sr-doped ZnO thin films, Mater Chem Phys 148 (2014) 720e726
[14] T.A Vijayan, R Chandramohan, S Valanarasu, J Thirumalai, S.P Subramanian, Nanocrystalline Mn and Fe doped ZnO thin films prepared using SILAR method for dilute magnetic semiconductor application, J Mater Sci 43 (2008) 1776e1782
[15] T.P Rao, M.C Santhoshkumar, A Safarulla, V Ganesan, S.R Barman, C Sanjeeviraja, Physical properties of Ga-doped ZnO thinfilms by spray py-rolysis, Physica B 405 (2010) 2226e2231
[16] J Tauc, Amorphous and Liquid Semiconductors, Plenum Press, New York, 1974
[17] K Pradeev raj, K Dasaiyandi, A Kennedy, R Thamizselvi, Structural, optical, photoluminescence and photocatalytic assessment of Sr-doped ZnO nano-particles, Mater Chem Phys 183 (2016) 24e36
[18] Linhu Xu, Shaorong Xiao, Chengyi Zhang, Gaige Zheng, Jing Su, Lilong Zhao, Junfeng Wang, Optical and structural properties of Sr-doped ZnO thinfilms, Mater Chem Phys 184 (2014) 720e726
[19] P.V Raghavendra, J.S Bhat, N.G Deshpande, Enhancement of photo-luminescence in Sr doped ZnO thinfilms prepared by spray pyrolysis, Mater Sci Semicond Process 68 (2017) 262e269
[20] P.V Raghavendra, J.S Bhat, Optical properties of strontium doped zinc oxide thin films, AIP Conf Proc (2017), https://doi.org/10.1063/1.4980527, 1832080067
[21] B Ergin, E Ketenci, F Atay, Characterization of ZnOfilms obtained by ultra-sonic spray pyrolysis technique, Int J Hydrogen Energy 34 (12) (2009) 5249e5254
[22] B.D Cullity, Elements of X-Ray Diffraction, second ed., Wesley, Reading, 1978 [23] S Sali, M Boumaour, M Kechouane, S Kermadi, F Aitamar, Nanocrystalline ZnOfilm deposited by ultrasonic spray on textured silicon substrate as an anti-reflection coating layer, Physica B 407 (2012) 2626e2631
[24] A Bedia, F.Z Bedia, M Aillerie, N Maloufi, S Ould Saad Hamady, O Perroud, B Benyoucef, Optical, electrical and structural properties of nano-pyramidal ZnO films grown on glass substrate by spray pyrolysis technique, Opt Mater 36 (7) (2014) 1123e1130
[25] L.P Peng, L Fang, X.F Yang, Y.J Li, Q.L Huang, F Wu, C.Y Kong, Effect of annealing temperature on the structure and optical properties of In-doped ZnO thinfilms, J Alloys Compd 484 (2009) 575
[26] A Guinier, Theorie et Technique de la Radiocristallographie, Dunod, Paris,
1964
[27] I Horcas, R Fermandez, J.M Gomez-Rodriguez, J Colchero, J Gomez-Herrero, A.M Baro, WSXM: a software for scanning probe microscopy and a tool for nanotechnology, Rev Sci Instrum 78 (2007) 013705
[28] C Periasamy, R Prakach, P Chakrabarti, Effect of post-annealing on structural and optical properties of ZnO thinfilms deposited by vacuum coating tech-nique, J Mater Sci Mater Electron 21 (3) (2010) 309e315
[29] P Chand, A Gaur, A Kumar, Structural and optical properties of ZnO nano-particles synthesized at different pH values, J Alloys Compd 539 (2012) 174e178
http://creativecommons.org/licenses/by/4.0/ ScienceDirect w w w e l s e v i e r c o m / l o c a t e / j s a m d https://doi.org/10.1016/j.jsamd.2018.01.004 https://doi.org/10.1063/1.4801761 https://doi.org/10.1016/j.vacuum.2011.01.008 https://doi.org/10.1063/1.4801892, B.Y Oh, M.C Jeong, T.H Moon, W Lee, J.M Myoung, J.Y Huang, D.S Seo,Transparent conductive Al-doped ZnO Q Wan, Q.H Li, Y.J Chen, T.H Wang, X.L He, J.P Li, C.L Lin, Fabrication andethanol sensing characteristics of ZnO nano wire gas sensors, Appl Phys Lett. S.H Ko, D Lee, H.W Kang, K.H Nam, J.Y Yeo, S.J Hong, C.P Grigoropoulos,H.J Sung, Nano forest of hydro thermally grown hierarchical ZnO nano wires Y.R Ryu, T.S Lee, J.A Lubguban, H.W White, Y.S Park, C.J Youn, ZnO devices:photodiodes and p-type W Peng, Y He, C Wen, K Ma, Surface acoustic wave ultraviolet detectorbased on zinc oxide nano wires sensing layer, Sens Actuators A Phys 184 J.B.K Law, J.T.L Thong, Simple fabrication of a ZnO nano wire photo detectorwith a fast photoresponse time, Appl Phys Lett 88 (2006), 133114 R Yousefi, F Jamali-Sheini, M Cheraghizade, S Khosravi-Gandomani,A Sa ́ N.L Tarwal, A.V Rajgure, J.Y Patil, M.S Khandekar, S.S Suryavanshi, P.S Patil,M.G Gang, J.H Kim, J.H Jang, A selective ethanol gas sensor based on J.T Chen, J Wang, F Zhang, G.A Zhang, Z.G Wu, P.X Yan, The effect of Ladoping concentration on the properties of zinc oxide L Xu, S Xiao, C Zhang, G Zheng, J Su, L Zhao, J Wang, Optical and structuralproperties of Sr-doped ZnO thin 1776e1782 T.P Rao, M.C Santhoshkumar, A Safarulla, V Ganesan, S.R Barman,C Sanjeeviraja, Physical properties of Ga-doped ZnO thin J Tauc, Amorphous and Liquid Semiconductors, Plenum Press, New York,1974 .K Pradeev raj, K Dasaiyandi, A Kennedy, R Thamizselvi, Structural, optical,photoluminescence and photocatalytic assessment of Sr-doped ZnO P.V Raghavendra, J.S Bhat, N.G Deshpande, Enhancement of photo-luminescence in Sr doped ZnO thin https://doi.org/10.1063/1.4980527 B Ergin, E Ketenci, F Atay, Characterization of ZnOfilms obtained by B.D Cullity, Elements of X-Ray Diffraction, second ed., Wesley, Reading, 1978 S Sali, M Boumaour, M Kechouane, S Kermadi, F Aitamar, NanocrystallineZnO A Bedia, F.Z Bedia, M Aillerie, N Maloufi, S Ould Saad Hamady, O Perroud,B Benyoucef, Optical, electrical and structural properties of nano-pyramidal L.P Peng, L Fang, X.F Yang, Y.J Li, Q.L Huang, F Wu, C.Y Kong, Effect ofannealing temperature on the structure and optical properties of In-doped A Guinier, Theorie et Technique de la Radiocristallographie, Dunod, Paris,1964 I Horcas, R Fermandez, J.M Gomez-Rodriguez, J Colchero, J Gomez-Herrero,A.M Baro, WSXM: a software for scanning probe microscopy and a tool for C Periasamy, R Prakach, P Chakrabarti, Effect of post-annealing on structuraland optical properties of ZnO thin 174178.