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Direct growth of graphitic carbongraphene on si (111) by using electron beam evaporation

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Cấu trúc

  • CHAPTER 1. INTRODUCTION

    • 1.1. General introduction

    • 1.2. Outline

  • CHAPTER 2. STRUCTURAL PROPERTIES, STUDIED METHOD AND EXPERIMENTAL TECHNIQUES

    • 2.1. Introduction

    • 2.2. Structure of C/Si (111) samples

    • 2.3. Crystallographic structures of relevant materials

    • 2.4. Sample preparation

    • 2.5. Experimental techniques

    • 2.6. Summary

  • CHAPTER 3. GROWING GRAPHENE ON SI: STATE OF THE ART

    • 3.1. Introduction

    • 3.2. Electron beam evaporators

    • 3.3. MBE growth

    • 3.4. CVD growth

    • 3.5. Laser irradiation

    • 3.6. Transfer processes

    • 3.7. Summary

  • CHAPTER 4. EXPERIMENTAL RESULTS AND DISCUSSION

    • 4.1. Introduction

    • 4.2. Preparation of Si (111) 7x7 substrate

    • 4.3. Growing graphene of Si (111) 7x7 substrate

    • 4.4. Summary

      • 2.1 Introduction

      • 2.2 Structure of C/Si(111) samples

      • 2.3 Crystallographic structures of relevant materials

        • 2.3.1 Real and reciprocal lattice vectors

        • 2.3.2 Reciprocal characterization

        • 2.3.3 Crystallographic structure in the real and reciprocal space

          • a Si(111) 77 surface reconsctruction

          • b Silicon carbide

          • c Amorphous carbon

          • d Graphite - graphene

        • 2.3.4 Summary

      • 2.4 Sample preparation

        • 2.4.1 Principle of e-beam evaporation

          • a Evaporation and deposition rates

          • b Evaporation sources

          • c Evaporation materials

          • d E-beam power and deposition rate

          • e Advantages and disadvantages

        • 2.4.2 Experimental setup

          • a Main components needed to setup the experiment using graphite rod form of evaporation

          • b Principle of operation

          • c Experimental conditions for carbon evaporation

      • 2.5 Experimental techniques

        • 2.5.1 Ultra-high vacuum

        • 2.5.2 Low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED)

          • a Principle of LEED and RHEED

          • b LEED geometry

          • c RHEED geometry

        • 2.5.3 Auger electron (AE) and X-ray photoelectron (XP) spectroscopies

          • a Principle of AES and XPS

          • b Depth profiling of AES and XPS

        • 2.5.4 Raman spectroscopy (RS)

          • a Principle of Raman

          • b Raman for graphene

        • 2.5.5 Scanning tunneling microscopy (STM) and atomic force microscopy (AFM)

          • a STM principle

          • b Mode of operation

          • c AFM principle

          • d Mode of operation

      • 2.6 Summary

  • CHAPTER 5. CONCLUSION

    • 5.1. Summary of the results

    • 5.2. Perspectives

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