Semiconductors and semimetals volume 99, pages 2 228 (2018)

SERIES EDITORS CHENNUPATI JAGADISH Distinguished Professor Department of Electronic Materials Engineering Research School of Physics and Engineering Australian National University Canberra, ACT2601, Australia ZETIAN MI Professor Department of Electrical Engineering and Computer Science University of Michigan 1310 Beal Avenue Ann Arbor, MI 48109 United States of America Academic Press is an imprint of Elsevier 50 Hampshire Street, 5th Floor, Cambridge, MA 02139, United States 525 B Street, Suite 1650, San Diego, CA 92101, United States The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, United Kingdom 125 London Wall, London, EC2Y 5AS, United Kingdom First edition 2018 © 2018 Elsevier Inc All rights reserved No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying, recording, or any information storage and retrieval system, without permission in writing from the publisher Details on how to seek permission, further information about the Publisher’s permissions policies and our arrangements with organizations such as the Copyright Clearance Center and the Copyright Licensing Agency, can be found at our website: www.elsevier.com/permissions This book and the individual contributions contained in it are protected under copyright by the Publisher (other than as may be noted herein) Notices Knowledge and best practice in this field are constantly changing As new research and experience broaden our understanding, changes in research methods, professional practices, or medical treatment may become necessary Practitioners and researchers must always rely on their own experience and knowledge in evaluating and using any information, methods, compounds, or experiments described herein In using such information or methods they should be mindful of their own safety and the safety of others, including parties for whom they have a professional responsibility To the fullest extent of the law, neither the Publisher nor the authors, contributors, or editors, assume any liability for any injury and/or damage to persons or property as a matter of products liability, negligence or otherwise, or from any use or operation of any methods, products, instructions, or ideas contained in the material herein ISBN: 978-0-12-815099-3 ISSN: 0080-8784 For information on all Academic Press publications visit our website at https://www.elsevier.com/books-and-journals Publisher: Zoe Kruze Acquisition Editor: Jason Mitchell Editorial Project Manager: Shellie Bryant Production Project Manager: Abdulla Sait Cover Designer: Alan Studholme Typeset by SPi Global, India CONTRIBUTORS Tomohiro Amemiya Institute of Innovative Research (IIR), Tokyo Institute of Technology, Tokyo, Japan (ch4) Shigehisa Arai Institute of Innovative Research (IIR), Tokyo Institute of Technology, Tokyo, Japan (ch4) Alexei N Baranov IES, Univ Montpellier, CNRS, Montpellier, France (ch1) Mohamed Benyoucef Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), Center of Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Kassel, Germany (ch2) John E Bowers Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, United States (ch6) Laurent Cerutti IES, Univ Montpellier, CNRS, Montpellier, France (ch1) Brian Corbett Tyndall National Institute, University College Cork, Cork, Ireland (ch3) Michael L Davenport Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, United States (ch6) Dimitris Fitsios Centre de Nanosciences et de Nanotechnologies, CNRS, Universite Paris Saclay, Palaiseau, France (ch5) Yuqing Jiao Photonic Integration Group, Eindhoven University of Technology, Eindhoven, The Netherlands (ch7) Tin Komljenovic Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, United States (ch6) Ruggero Loi Tyndall National Institute, University College Cork, Cork, Ireland (ch3) James O’Callaghan Tyndall National Institute, University College Cork, Cork, Ireland (ch3) Fabrice Raineri Centre de Nanosciences et de Nanotechnologies, CNRS, Universite Paris Saclay, Palaiseau; Universite Paris Denis Diderot, Sorbone Paris Cite, Paris, France (ch5) vii viii Contributors Johann Peter Reithmaier Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), Center of Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Kassel, Germany (ch2) Jean-Baptiste Rodriguez IES, Univ Montpellier, CNRS, Montpellier, France (ch1) Gunther Roelkens Ghent University-Imec, Technologiepark-Zwijnaarde, Ghent, Belgium (ch3) Roland Teissier IES, Univ Montpellier, CNRS, Montpellier, France (ch1) Eric Tournie IES, Univ Montpellier, CNRS, Montpellier, France (ch1) Minh A Tran Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, United States (ch6) Jos J.G.M van der Tol Photonic Integration Group, Eindhoven University of Technology, Eindhoven, The Netherlands (ch7) Kevin A Williams Photonic Integration Group, Eindhoven University of Technology, Eindhoven, The Netherlands (ch7) PREFACE It can safely be stated that electronics dominated the 20th century, whereas photonics begins to dominate the 21st century The insatiable need for large bandwidth in data and telecom applications, handheld devices, and internet of things, all of which devour huge amount of energy, cannot be satisfied solely by electronics or photonics It is in this context silicon photonics is considered as an enabling technology for the next-generation highbandwidth optical communication systems (from intrachip to long distance) by combining relevant building blocks such as waveguides, filters, couplers, modulators, resonators, detectors, and lasers on silicon Several of these building blocks can be realized in silicon in a CMOS fab Silicon being a poor material for optical gain, light sources (lasers) and amplifiers are normally fabricated with III–V semiconductors The lasers in telecom wavelengths, 1.3 and 1.55 μm, can be propagated via silicon/silicon dioxide waveguides with low losses in the sub-dB/cm ranges The large difference in the refractive indices of silicon and silicon dioxide enables to confine light produced by III–V materials in submicron or even nanoscale dimensions with high bending capabilities; thereby smaller footprints and large integration densities are facilitated in silicon photonics The relevant roadmaps on silicon photonics (David Thomson et al., 2016, Roadmap on silicon photonics, J Opt 18, 073003 and 2017 Integrated photonic systems roadmap, AIM Photonics, March 2018) both clearly point out that the need for high bandwidth, energy efficiency, and low latency (data transfer) will be the driving force for silicon photonics that will enable optical interconnects which will gradually outperform electrical interconnects This volume collects the state-of-the-art results on achieving silicon photonic components toward fulfilling the promise of silicon photonics In Chapter 1, Epitaxial integration of antimonide-based semiconductor lasers on Si, Eric Tournie et al demonstrate that III-Sb quantum well lasers can be directly grown on silicon and the lasing emission at 1.5–2.3 μm wavelength range operating under CW conditions at room temperature has been achieved In addition, InAs/AlSb quantum cascade lasers on silicon emitting near 11 μm operating up to 400 K have also been demonstrated The ability to achieve both telecom and mid-IR wavelengths opens up the feasibility of achieving silicon photonic components for optical communication and sensing applications ix x Preface In Chapter 2, III–V on silicon nanocomposites, J.P Reithmaier and M Benyoucef describe a very novel approach of embedding III–V quantum dots in a defect-free planar Si matrix This method is particularly designed to be compatible with CMOS fabrication since the novel hybrid material containing quantum dots in silicon matrix is fabricated prior to subjecting it to CMOS processes Thereby the hybrid material will still have optoelectronic properties similar to that of III–V materials and yet will be compatible with CMOS processing In Chapter 3, Transfer printing for silicon photonics, B Corbett et al demonstrate microtransfer printing technique as a flexible and viable technology for integrating several types of components on silicon By this method, the authors demonstrate stand-alone lasers on silicon, integrated laser and waveguide on silicon, evanescent laser on Si using a tapered coupling, grating coupling photodiodes on silicon/silicon nitride, FTTH (fiber to the home) transceiver array made of III–V on silicon, and an optical link consisting of light emitting diode and a photodiode are some of the examples In Chapter 4, Semiconductor membrane lasers and photodiode on Si, Shigehisa Arai and Tomohiro Amemiya focus on the aspect of achieving ultra-low power consumption in optical interconnects To this end they realize lateral-current-injection-type membrane distributed feedback (DFB) and distributed reflector lasers They demonstrate a modulation bandwidth of 20 Gbits/s with the energy cost of less than 100 fJ/bit, which is projected to decrease to 30 fJ/bit if the waveguide losses in the optical link and the electrical resistance can be reduced In Chapter 5, Photonic crystal lasers and nanolasers on silicon, Dimitris Fitsios and Fabrice Raineri demonstrate physics and technology of highperformance photonic crystal (PhC) nanolasers on silicon platform Electrically injected photonic crystal nanolasers on Si/SOI circuitry have been demonstrated and have shown the maturity to be integrated in commercial CMOS-integrated nanophotonics Of particular interest is the implementation of PhC cavity-based optical memory device with a record footprint of 6.2 μm2 and an actual repetition rate of Gbits/s Having a switching times