Erratum Temperature dependence of Debye Waller factors of semiconductors

Vacuum 107 (2014) 33 Contents lists available at ScienceDirect Vacuum journal homepage: www.elsevier.com/locate/vacuum Corrigendum Corrigendum to “Temperature dependence of DebyeeWaller factors of semiconductors” [Vacuum 101 (2013) 63e66] Nguyen Van Hung a, *, Cu Sy Thang b, Nguyen Cong Toan a, Ho Khac Hieu c,1 a Department of Physics, Hanoi University of Science, 334 Nguyen Trai, Thanh Xuan, Hanoi, Viet Nam Institute of Geological Sciences (IGS), Vietnam Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi, Viet Nam c National University of Civil Engineering, 55 Giai Phong, Hai Ba Trung, Hanoi, Viet Nam b The authors regret that the following sentence appeared twice in the paragraph below “Equaling the one of P (Fig 2b).” The correct sentences are reproduced below:Beside the comparisons of our calculated results of MSD for Ga and the one for As in GaAs (Fig 2a), for Ga and the one for P in GaP (Fig 2b), for In and the one for P in InP (Fig 3a), as well as for In and the one for Sb in InSb (Fig 3b) with those of M S Kushwaha [26] at several temperatures, the following detailed analyses and conclusions have been done: At 1000 K the calculated value of MSD of Ga in GaAs is 0.0275 Ǻ2 equaling the one of As (Fig 2a); but also this value of the same Ga in GaP is 0.024 Ǻ2 equaling the one of P (Fig 2b) Similarly, the calculated value of MSD of In in InP is 0.0275 Ǻ2 (Fig 3a) equaling the one of P; but also this value of the same In in InSb (Fig 3b) is 0.042 Ǻ2 equaling the one of Sb The authors would like to apologize for any inconvenience this may have caused to the readers of the journal DOI of original article: http://dx.doi.org/10.1016/j.vacuum.2013.07.021 * Corresponding author E-mail addresses: hungnv@vnu.edu.vn, hung41043@gmail.com (N Van Hung) Duy Tan University, K7/25 Quang Trung, Danang, Viet Nam http://dx.doi.org/10.1016/j.vacuum.2014.03.019 0042-207X/Ó 2014 Elsevier Ltd All rights reserved