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[1] R. A. Soref and J. P. Lorenzo, “All-silicon active and passive guided-wave components for ߣ=1.3 and 1.6μm,” IEEE Journal of Quantum Electronics QE-22, (1986) 873-879 |
Sách, tạp chí |
Tiêu đề: |
All-silicon active and passive guided-wave components for ߣ=1.3 and 1.6μm,” "IEEE Journal of Quantum Electronics |
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[2] R. A. Soref, “Silicon-based optoelectronics,” Proceedings of the IEEE 81, (1993) 1687-1706 |
Sách, tạp chí |
Tiêu đề: |
Silicon-based optoelectronics,” "Proceedings of the IEEE |
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[3] L.Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature, 408, (2000) 440-444 |
Sách, tạp chí |
Tiêu đề: |
Optical gain in silicon nanocrystals,” "Nature |
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[4] J. Ruan, P. M. Fauchet, L. Dal Negro, C. Mazzoleni, and L.Pavesi, “Stimulated emission in nanocrystalline silicon superlattice,” Applied Physics Letters 83, (2003) 5479-5481 |
Sách, tạp chí |
Tiêu đề: |
Stimulated emission in nanocrystalline silicon superlattice,” "Applied Physics Letters |
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[5] M. J. Chen, J. L. Yen, J. Y. Li, J. F. Chang, S. C. Tsai, and C. S. Tsai, “Stimulated emission in a nanostructured silicon pn-junction diode using current injection,” Applied Physics Letters 84, (2004) 2163-2165 |
Sách, tạp chí |
Tiêu đề: |
Stimulated emission in a nanostructured silicon pn-junction diode using current injection,” "Applied Physics Letters |
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[7] G. Franzò and S. Coffa, “Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes,” Journal of Applied Physics 81, (1997) 2784-2793 |
Sách, tạp chí |
Tiêu đề: |
Mechanism and performance of forward and reverse bias electroluminescence at 1.54 "μ"m from Er-doped Si diodes,” "Journal of Applied Physics |
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[8] F. Priolo, G. Franzò, S. Coffa and A. Carnera, “Excitation and nonradiative deexcitation processes of Er 3+ in crystalline Si,” Physical Review B 57, (1998) 4443-4455 |
Sách, tạp chí |
Tiêu đề: |
Excitation and nonradiative deexcitation processes of Er3+ in crystalline Si,” "Physical Review B |
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[9] A. J. Kenyon, P. F. Trwoga, M. Federighi, and C W Pitt “Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,” Journal of Physics: Condensed Matter 6, (1994) L319- 324 |
Sách, tạp chí |
Tiêu đề: |
Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,”" Journal of Physics: Condensed Matter |
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[12] A. Liu, H. Rong, M. Paniccia, O. Cohen, D. Hak, “Net optical gain in a low loss silicon- on-insulator waveguide by stimulated Raman scattering,” Optics Express 12, (2004) 4261-4268 |
Sách, tạp chí |
Tiêu đề: |
Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering,” "Optics Express |
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[13] O. Boyraz and B. Jalali, “Demonstration of a silicon Raman laser,” Optics Express 12, (2004) 5269-5273 |
Sách, tạp chí |
Tiêu đề: |
Demonstration of a silicon Raman laser,” "Optics Express |
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[14] B. Jalali, “Silicon photonics,” Journal of Lightwave Technology 24, (2006) 4600-4615 |
Sách, tạp chí |
Tiêu đề: |
Silicon photonics,” "Journal of Lightwave Technology |
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[15] H. Park, A. W. Fang, S. Kodama, and J. E. Bowers, “Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells,” Optics Express 13, (2005) 9460-9464 |
Sách, tạp chí |
Tiêu đề: |
Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells,” "Optics Express |
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[16] J. H. Park and A. J. Steckl, “Demonstration of a visible laser on silicon using Eu-doped GaN thin films,” Journal of Applied Physics 98, (2005) 056108 |
Sách, tạp chí |
Tiêu đề: |
Demonstration of a visible laser on silicon using Eu-doped GaN thin films,” "Journal of Applied Physics |
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[17] Z. Mi, P. Bhattacharya, J. Yang, and K. P. Pipe, “Room-temperature self-organized In 0.5 Ga 0.5 As quantum dot laser on silicon,” Electronics Letters 41, (2005) 742-744 |
Sách, tạp chí |
Tiêu đề: |
Room-temperature self-organized In0.5Ga0.5As quantum dot laser on silicon,” "Electronics Letters |
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[18] L. Esaki and R. Tsu, "Superlattice and negative differential conductivity in semiconductors", IBM Journal of Research and Development 14, (1970), 61-65 |
Sách, tạp chí |
Tiêu đề: |
Superlattice and negative differential conductivity in semiconductors |
Tác giả: |
L. Esaki and R. Tsu, "Superlattice and negative differential conductivity in semiconductors", IBM Journal of Research and Development 14 |
Năm: |
1970 |
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[19] R. F. Kazarinov and R. Suris, “Electric and electromagnetic properties of semiconductors with a superlattice,” Soviet Physics – Semiconductors 5, (1971) 797.284 Advances in Lasers and Electro Optics |
Sách, tạp chí |
Tiêu đề: |
Electric and electromagnetic properties of semiconductors with a superlattice,” "Soviet Physics – Semiconductors |
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[6] E. Desurvire, Erbium-doped Fiber Amplifiers: Principles and Applications, Wiley, New York, (1994) |
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