transistor circuit techniques discrete and integrated

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transistor circuit techniques discrete and integrated

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[...]... simple d.c and a.c models which prove so useful in circuit analysis A brief description of semiconductors and device operation is justified in providing a basis for understanding diode and transistor behaviour, their characterization and limitations Great importance is attached to a basic appreciation of integrated devices, bipolar and field-effect, particularly in terms of their matching and thermal... cut-off and saturation applied to a BJT To describe the structure of integrated circuit components—BJTs, resistors and capacitors To explain the value of the (planar) integrated circuit process in being able to produce components which are matched and whose parameters track with temperature In the design of electronic circuits it is important to know about discrete semiconductor devices such as diodes and. .. purely numbers and do not give the inherent prediction of parameter variation with bias current and current gain which is the forte of the hybrid-π and simple models A wide range of transistor circuitry, both linear and switching, is covered in terms of fundamental qualitative circuit operation followed by analysis and design procedure No apology is made for the extensive analytic treatment of circuits xiii... subsequently is applied to the design of amplifiers and switching circuits Although the emphasis is on discrete components and fundamental circuit techniques, the influence of integrated circuit design is equally important Semiconductors A pure or intrinsic semiconductor is conveniently recognized as having a conductivity between that of a metal and of an insulator although, as we shall see later,... the device package Integrated circuits An integrated, or monolithic, circuit is a small chip of silicon (typically between 1 mm and 5 mm square and 0.25 mm thick) containing hundreds of thousands of components and capable of performing tasks ranging from simple combinational logic or amplification to very complex functions such as those required in microprocessors Morant (1990) and Chapter 5 of Sparkes... with bipolar techniques but it is essential to realize that MOS transistors are the key to the integration of very complex circuits They are described in Chapter 7 Economic forces Despite a high utilization of computer aids, the design of an integrated circuit is a lengthy and expensive procedure In order that the integrated circuits themselves are inexpensive, they must be mass-produced and satisfy... general references are useful for this chapter: Millman and Grabel (1987), Chapters 1–5 Sparkes (1987) GaAs, GaP and GaAIAs are particularly important as materials for optical devices such as light-emitting diodes, photodetectors and lasers Germanium has largely been supplanted by silicon for diodes and transistors and is not used in integrated circuit fabrication A formal treatment of conduction mechanisms... the order of 400 pF/ mm2) and, for this reason, total chip capacitance is usually limited to a maximum of approximately 100 pF Therefore, it is impossible to integrate capacitors with nanofarad values and integrated circuit design techniques avoid, wherever possible, the use of capacitors Essential high-valued capacitors must be discrete components external to the integrated circuit package However,... flow through the device, Fig 1.6 Schematic structures, symbols, voltages and currents for (a) n-p-n and (b) p-n-p BJTs providing discrimination between the symbol for the n-p-n transistor and its p-n-p counterpart Figure 1.6 shows that for both n-p-n and p-n-p transistors, (1.12) where IE, IC and IB are the emitter, collector and base currents, respectively 13 Text © G.J.Ritchie 1983, 1987, 1993 Fig... junctions with the substrate (the Fig 1.10 Section (not to scale) of an isolated integrated BJT, resistor and capacitor 20 Text © G.J.Ritchie 1983, 1987, 1993 substrate is connected to the most negative potential in the circuit) Isolated bipolar transistors, resistors and capacitors are fabricated in these wells Integrated BJTs An integrated n-p-n planar BJT (see Fig 1.10) is fabricated by performing a ptype . to the design of amplifiers and switching circuits. Although the emphasis is on discrete components and fundamental circuit techniques, the influence of integrated circuit design is equally important. Semiconductors A. chapter, with answers at the end of the book. Text © G.J.Ritchie 1983, 1987, 1993 Transistor Circuit Techniques discrete and integrated Third edition G.J.Ritchie Department of Electronic Systems Engineering University. junction transistor 12 BJT operation 14 BJT current gain 15 BJT characteristics 16 Load line 18 BJT ratings 19 Integrated circuits 19 The planar process 20 Integrated BJTs 21 Integrated diodes 22 Integrated

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  • nt1134fm.pdf

    • Transistor Circuit Techniques: discrete and integrated, Third edition

      • Contents

      • Preface to the third edition

      • Preface to the second edition

        • Preface to the first edition

        • Appendix A: Preferred Values for Passive Components

        • Appendix B: Transient response of R-C circuits

        • Appendix C: h-parameter modelling of BJTs

        • References

        • Answers to problems

        • nt1134ch1.pdf

          • Table of Contents

          • Chapter 1: Introduction to semiconductor devices

            • Objectives

            • Semiconductors

            • The junction diode

              • Diode in equilibrium

              • Reverse bias

              • Forward bias

              • The diode equation

              • Breakdown

              • Diode capacitance

              • Diode ratings

              • Diode models

                • d.c. model

                • Small-signal a.c. model

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