Bsi bs en 60747 16 5 2013

BS EN 60747-16-5:2013 BSI Standards Publication Semiconductor devices Part 16-5: Microwave integrated circuits — Oscillators BRITISH STANDARD BS EN 60747-16-5:2013 National foreword This British Standard is the UK implementation of EN 60747-16-5:2013 It is identical to IEC 60747-16-5:2013 The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors A list of organizations represented on this committee can be obtained on request to its secretary This publication does not purport to include all the necessary provisions of a contract Users are responsible for its correct application © The British Standards Institution 2013 Published by BSI Standards Limited 2013 ISBN 978 580 62661 ICS 31.080.99 Compliance with a British Standard cannot confer immunity from legal obligations This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 September 2013 Amendments/corrigenda issued since publication Date Text affected BS EN 60747-16-5:2013 EUROPEAN STANDARD EN 60747-16-5 NORME EUROPÉENNE EUROPÄISCHE NORM September 2013 ICS 31.080.99 English version Semiconductor devices Part 16-5: Microwave integrated circuits Oscillators (IEC 60747-16-5:2013) Dispositifs semiconducteurs Partie 16-5: Circuits intégrés hyperfréquences Oscillateurs (CEI 60747-16-5:2013) Halbleiterbauelemente Teil 16-5: Integrierte Mikrowellenschaltkreise Oszillatoren (IEC 60747-16-5:2013) This European Standard was approved by CENELEC on 2013-07-24 CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member This European Standard exists in three official versions (English, French, German) A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom CENELEC European Committee for Electrotechnical Standardization Comité Européen de Normalisation Electrotechnique Europäisches Komitee für Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B - 1000 Brussels © 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members Ref No EN 60747-16-5:2013 E BS EN 60747-16-5:2013 EN 60747-16-5:2013 -2- Foreword The text of document 47E/452/FDIS, future edition of IEC 60747-16-5, prepared by SC 47E, "Discrete semiconductor devices", of IEC TC 47, "Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60747-16-5:2013 The following dates are fixed: • • latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement latest date by which the national standards conflicting with the document have to be withdrawn (dop) 2014-04-24 (dow) 2016-07-24 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent rights Endorsement notice The text of the International Standard IEC 60747-16-5:2013 was approved by CENELEC as a European Standard without any modification In the official version, for Bibliography, the following note has to be added for the standard indicated: IEC 60679-1:2007 NOTE Harmonized as EN 60679-1:2007 (not modified) BS EN 60747-16-5:2013 EN 60747-16-5:2013 -3- Annex ZA (normative) Normative references to international publications with their corresponding European publications The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application For dated references, only the edition cited applies For undated references, the latest edition of the referenced document (including any amendments) applies NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies Publication Year Title EN/HD Year IEC 60617 Data base Graphical symbols for diagrams - - IEC 60747-1 + corr August + A1 2006 2008 2010 Semiconductor devices Part 1: General - - IEC 60747-4 2007 Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors - - IEC 60747-16-3 + A1 2002 2009 Semiconductor devices Part 16-3: Microwave integrated circuits Frequency converters EN 60747-16-3 + A1 2002 2009 IEC 61340-5-1 - Electrostatics EN 61340-5-1 Part 5-1: Protection of electronic devices from electrostatic phenomena - General requirements IEC/TR 61340-5-2 - Electrostatics CLC/TR 61340-5-2 Part 5-2: Protection of electronic devices from electrostatic phenomena - User guide - BS EN 60747-16-5:2013 –2– 60747-16-5  IEC:2013 CONTENTS Scope Normative references Terms and definitions Essential ratings and characteristics 11 4.1 General requirements 11 4.1.1 Circuit identification and types 11 4.1.2 General function description 11 4.1.3 Manufacturing technology 11 4.1.4 Package identification 11 4.2 Application description 11 4.2.1 Conformance to system and/or interface information 11 4.2.2 Overall block diagram 11 4.2.3 Reference data 11 4.2.4 Electrical compatibility 12 4.2.5 Associated devices 12 4.3 Specification of the function 12 4.3.1 Detailed block diagram – Functional blocks 12 4.3.2 Identification and function of terminals 12 4.3.3 Function description 13 4.4 Limiting values (absolute maximum rating system) 13 4.4.1 Requirements 13 4.4.2 Electrical limiting values 14 4.4.3 Temperatures 14 4.5 Operating conditions (within the specified operating temperature range) 15 4.6 Electrical characteristics 15 4.7 Mechanical and environmental ratings, characteristics and data 16 4.8 Additional information 16 Measuring methods 16 5.1 5.2 5.3 General 16 5.1.1 General precautions 16 5.1.2 Characteristic impedance 17 5.1.3 Handling precautions 17 5.1.4 Types 17 Oscillation frequency (f osc ) 17 5.2.1 Purpose 17 5.2.2 Circuit diagram 17 5.2.3 Principle of measurement 17 5.2.4 Circuit description and requirements 17 5.2.5 Precautions to be observed 17 5.2.6 Measurement procedure 18 5.2.7 Specified conditions 18 Output power (P o,osc ) 18 5.3.1 Purpose 18 5.3.2 Circuit diagram 18 5.3.3 Principle of measurement 18 BS EN 60747-16-5:2013 60747-16-5  IEC:2013 5.4 5.5 5.6 5.7 5.8 –3– 5.3.4 Circuit description and requirements 18 5.3.5 Precautions to be observed 18 5.3.6 Measurement procedure 18 5.3.7 Specified conditions 18 Phase noise ( L (f)) 19 5.4.1 Purpose 19 5.4.2 Measuring methods 19 Tuning sensitivity (S f,v ) 24 5.5.1 Purpose 24 5.5.2 Circuit diagram 24 5.5.3 Principle of measurement 24 5.5.4 Circuit description and requirements 24 5.5.5 Precautions to be observed 24 5.5.6 Measurement procedure 24 5.5.7 Specified conditions 24 Frequency pushing (f osc,push ) 24 5.6.1 Purpose 24 5.6.2 Circuit diagram 25 5.6.3 Principle of measurement 25 5.6.4 Circuit description and requirements 25 5.6.5 Precautions to be observed 25 5.6.6 Measurement procedure 25 5.6.7 Specified conditions 25 Frequency pulling (f osc,pull ) 25 5.7.1 Purpose 25 5.7.2 Circuit diagram 25 5.7.3 Principle of measurement 26 5.7.4 Circuit description and requirements 26 5.7.5 Precautions to be observed 26 5.7.6 Measurement procedure 26 5.7.7 Specified conditions 27 n-th order harmonic distortion ratio (P nth /P ) 27 5.8.1 Purpose 27 5.8.2 Circuit diagram 27 5.8.3 Principle of measurement 27 5.8.4 Circuit description and requirements 27 5.8.5 Measurement procedure 27 5.8.6 Specified conditions 27 Output power flatness ( ∆ P o,osc ) 28 5.9.1 Purpose 28 5.9.2 Circuit diagram 28 5.9.3 Principle of measurement 28 5.9.4 Circuit description and requirements 28 5.9.5 Precautions to be observed 28 5.9.6 Measurement procedure 28 5.9.7 Specified conditions 28 5.10 Tuning linearity 28 5.10.1 Purpose 28 5.10.2 Circuit diagram 28 5.9 BS EN 60747-16-5:2013 –4– 5.10.3 5.10.4 5.10.5 5.10.6 5.10.7 60747-16-5  IEC:2013 Principle of measurement 29 Circuit description and requirements 29 Precautions to be observed 29 Measurement procedure 29 Specified conditions 30 5.11 Frequency temperature coefficient ( α f,temp ) 30 5.11.1 Purpose 30 5.11.2 Circuit diagram 30 5.11.3 Principle of measurement 30 5.11.4 Circuit description and requirements 31 5.11.5 Precautions to be observed 31 5.11.6 Measurement procedure 31 5.11.7 Specified conditions 31 5.12 Output power temperature coefficient ( α P,temp ) 31 5.12.1 Purpose 31 5.12.2 Circuit diagram 31 5.12.3 Principle of measurement 31 5.12.4 Circuit description and requirements 32 5.12.5 Precautions to be observed 32 5.12.6 Measurement procedure 32 5.12.7 Specified conditions 32 5.13 Spurious distortion ratio (P s /P ) 32 5.13.1 Purpose 32 5.13.2 Circuit diagram 32 5.13.3 Principle of measurement 32 5.13.4 Circuit description and requirements 33 5.13.5 Measurement procedure 33 5.13.6 Specified conditions 33 5.14 Modulation bandwidth (B mod ) 33 5.14.1 Purpose 33 5.14.2 Circuit diagram 33 5.14.3 Principle of measurement 34 5.14.4 Circuit description and requirements 34 5.14.5 Precautions to be observed 34 5.14.6 Measurement procedure 34 5.14.7 Specified conditions 35 5.15 Sensitivity flatness 35 5.15.1 Purpose 35 5.15.2 Circuit diagram 35 5.15.3 Principle of measurement 35 5.15.4 Circuit description and requirements 36 5.15.5 Precautions to be observed 36 5.15.6 Measurement procedure 36 5.15.7 Specified conditions 36 Verifying methods 36 6.1 Load mismatch tolerance ( Ψ L ) 36 6.1.1 Purpose 36 6.1.2 Verifying method (spurious intensity) 36 BS EN 60747-16-5:2013 60747-16-5  IEC:2013 6.1.3 –5– Verifying method (no discontinuity of frequency tuning characteristics of VCO) 37 Load mismatch ruggedness ( Ψ R ) 38 6.2.1 Purpose 38 6.2.2 Circuit diagram 38 6.2.3 Circuit description and requirements 38 6.2.4 Precautions to be observed 38 6.2.5 Test Procedure 38 6.2.6 Specified conditions 39 Bibliography 40 6.2 Figure – Circuit diagram for the measurement of the oscillation frequency f osc 17 Figure – Circuit diagram for the measurement of the phase noise L (f) (method 1) 20 Figure – Circuit diagram for the measurement of the phase noise L (f) (method 2) 21 Figure – Circuit diagram for the measurement of the phase noise L (f) (method 3) 22 Figure – Circuit diagram for the measurement of the frequency pulling f osc,pull 26 Figure – Tuning linearity 29 Figure – Circuit diagram for the measurement of the oscillation frequency temperature coefficient α f,temp 30 Figure – Circuit diagram for the measurement of the modulation bandwidth B mod 34 Figure – Sensitivity flatness 36 Table – Comparison of phase noise measuring methods 19 BS EN 60747-16-5:2013 –8– 60747-16-5  IEC:2013 SEMICONDUCTOR DEVICES – Part 16-5: Microwave integrated circuits – Oscillators Scope This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit oscillators This standard is applicable to the fixed and voltage-controlled semiconductor microwave oscillator devices, except the oscillator modules such as synthesizers which require external controllers NOTE This document is not applicable to the quartz crystal controlled oscillators They are specified by IEC 60679-1 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application For dated references, only the edition cited applies For undated references, the latest edition of the referenced document (including any amendments) applies IEC 60617, Graphical symbols for diagrams (available from ) IEC 60747-1:2006, Semiconductor devices – Part 1: General 1) Amendment 1:2010 IEC 60747-4:2007, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors IEC 60747-16-3:2002, Semiconductor devices – Part 16-3: Microwave integrated circuits – ) Frequency converters Amendment 1:2009 IEC 61340-5-1, Electrostatics – Part 5-1: Protection of electronic devices from electrostatic phenomena – General requirements IEC/TR 61340-5-2, Electrostatics – Part electrostatic phenomena – User guide 5-2: Protection of electronic Terms and definitions 3.1 oscillation frequency f osc frequency measured at the output port _ 1) A consolidated edition (2010) exists, including IEC 60747-1:2006 and its Amendment 2) A consolidated edition (2010) exists, including IEC 60747-16-3:2002 and its Amendment devices from BS EN 60747-16-5:2013 – 28 – 60747-16-5  IEC:2013 Output power flatness ( ∆ P o,osc ) 5.9 5.9.1 Purpose To measure the output power flatness under specified conditions 5.9.2 Circuit diagram See the circuit diagram shown in Figure 5.9.3 Principle of measurement See the principle of measurement in 5.3.3 Output power flatness is derived from the following equation: ∆Po,osc = Po,osc(max) − Po,osc(min) (10) where P o,osc(max) and P o,osc(min) are the maximum and the minimum output power in the specified control voltage range, respectively 5.9.4 Circuit description and requirements See the circuit description and requirements in 5.3.4 5.9.5 Precautions to be observed See the precautions to be observed in 5.2.5 5.9.6 Measurement procedure The bias under specified conditions is supplied Vary the control voltage in the specified voltage range Obtain the maximum output power and the minimum output power in the specified control voltage range Output power flatness is derived from Equation (10) 5.9.7 Specified conditions – Ambient or reference-point temperature – Bias conditions – Control voltage range 5.10 5.10.1 Tuning linearity Purpose To measure the tuning linearity under specified conditions 5.10.2 Circuit diagram See the circuit diagram shown in Figure BS EN 60747-16-5:2013 60747-16-5  IEC:2013 5.10.3 – 29 – Principle of measurement See the principle of measurement in 5.2.3 Tuning linearity δ f is derived from following equation: δf = fdev f osc,range × 100 (11) f osc,range = f osc (Vmax ) − f osc (Vmin ) where f osc (V max) f osc (V ) f dev NOTE is the oscillation frequency at the specified maximum control voltage V max; is the oscillation frequency at the specified minimum control voltage V ; is the maximum difference of the oscillation frequency from the ideal oscillation frequency on the straight line that is obtained by connecting the oscillation frequency at the minimum and the maximum control voltage A best-fit straight line obtained by regression method can be used for the ideal straight line See Figure Tuning linearity δ f is the value indicated in % fosc fosc Best fit line fosc(Vmax) fosc(Vmax) fosc,range fosc,range fdev fosc(Vmin) Vmin fdev fosc(Vmin) Vmax Control voltage Vmin IEC 1338/13 Figure – Tuning linearity 5.10.4 Circuit description and requirements See the circuit description and requirements in 5.2.4 5.10.5 Precautions to be observed See the precautions to be observed in 5.2.5 5.10.6 Measurement procedure The bias under specified conditions is supplied Vary the control voltage in the specified voltage range Vmax Control voltage IEC 1339/13 BS EN 60747-16-5:2013 – 30 – 60747-16-5  IEC:2013 Plot the oscillation frequency versus the control voltage characteristics in the specified control voltage range Tuning linearity δ f is derived from Equation (11) 5.10.7 Specified conditions – Ambient or reference-point temperature – Bias conditions – Control voltage range 5.11 5.11.1 Frequency temperature coefficient ( α f,temp ) Purpose To measure the oscillation frequency temperature coefficient under specified conditions 5.11.2 Circuit diagram The measuring circuit is shown in Figure Θ Thermometer Temperature sensor Environmental test chamber - Attenuator + A Device being measured A V V A Power meter B W Hz A Bias voltage NOTE Directional coupler Control voltage Frequency meter or spectrum analyser IEC 1340/13 The device being measured can contain a resonance circuit Figure – Circuit diagram for the measurement of the oscillation frequency temperature coefficient α f,temp 5.11.3 Principle of measurement The oscillation frequency temperature coefficient is derived from the following equation: α f,temp = f osc (T1 ) − f osc (T2 ) T1 − T2 where T and T are the ambient or reference-point temperatures; (12) BS EN 60747-16-5:2013 60747-16-5  IEC:2013 f osc (T ) f osc (T ) 5.11.4 – 31 – is the oscillation frequency at the temperature T ; is the oscillation frequency at the temperature T Circuit description and requirements See the circuit description and requirements in 5.2.4 5.11.5 Precautions to be observed See the precautions to be observed in 5.2.5 5.11.6 Measurement procedure The bias under specified conditions is supplied The ambient temperature is set to the specified value T by the environmental chamber, the temperature sensor and the thermometer In case of VCO, the oscillation frequency is set to the specified value The value f osc (T ) is measured by the frequency meter or spectrum analyser at the specified temperature T The ambient temperature is set to the specified value T by the environmental chamber, the temperature sensor and the thermometer The value f osc (T ) is measured by the frequency meter or spectrum analyser at the specified temperature T The oscillation frequency temperature coefficient α f,temp is derived from Equation (12) 5.11.7 Specified conditions – Ambient or reference-point temperatures, T and T Bias conditions – In case of VCO, oscillation frequency – 5.12 5.12.1 Output power temperature coefficient ( α P,temp ) Purpose To measure the output power temperature coefficient under specified conditions 5.12.2 Circuit diagram See the circuit diagram shown in Figure 5.12.3 Principle of measurement The output power temperature coefficient is derived from the following equation: Po,osc (T1) = P1 + L1 (13) Po,osc (T2 ) = P2 + L1 (14) BS EN 60747-16-5:2013 – 32 – α P,temp = 60747-16-5  IEC:2013 Po,osc (T1 ) − Po,osc (T2 ) P1 − P2 = T1 − T2 T1 − T2 (15) where L1 is the insertion loss from point A to point B in dB; T and T P1 are the ambient or reference-point temperatures; P2 5.12.4 is the value indicated by power meter in dBm at the temperature T ; is the value indicated by power meter in dBm at the temperature T Circuit description and requirements See the circuit description and requirements in 5.3.4 5.12.5 Precautions to be observed See the precautions to be observed in 5.2.5 5.12.6 Measurement procedure The bias under specified conditions is supplied The ambient temperature is set to the specified value T by the environmental chamber, the temperature sensor and the thermometer In case of VCO, the oscillation frequency is set to the specified value The value P is measured by the power meter at the specified temperature T The ambient temperature is set to the specified value T by the environmental chamber, the temperature sensor and the thermometer In case of VCO, the oscillation frequency is set to the specified value once more The value P is measured by the power meter at the specified temperature T The output power temperature coefficient α P,temp is derived from Equations (13) to (15) 5.12.7 Specified conditions See the specified conditions in 5.11.7 5.13 5.13.1 Spurious distortion ratio (P s /P ) Purpose To measure the spurious distortion ratio under specified conditions 5.13.2 Circuit diagram See the circuit diagram shown in Figure 5.13.3 Principle of measurement The spurious distortion ratio P s /P is derived from the following equation: BS EN 60747-16-5:2013 60747-16-5  IEC:2013 – 33 – P s /P1 = P s − P1 (16) where P1 is the output power of the fundamental (or desired) frequency in dBm; Ps is the maximum power of the spurious output, except harmonic components, in dBm; P s /P is expressed in dBc 5.13.4 Circuit description and requirements See the circuit description and requirements in 5.2.4 5.13.5 Measurement procedure The bias under specified conditions is supplied In case of VCO, the oscillation frequency is set to the specified value The value P and P s are measured at the spectrum analyser within the specified observing frequency range The spurious distortion ratio P s /P is derived from the Equation (16) 5.13.6 Specified conditions – Ambient or reference-point temperature – Bias conditions – In case of VCO, oscillation frequency – Observing frequency range Modulation bandwidth (B mod ) 5.14 5.14.1 Purpose To measure the modulation bandwidth under specified conditions 5.14.2 Circuit diagram The measuring circuit is shown in Figure Signal generator f G Bias network Control terminal Device being measured Attenuator Directional coupler Spectrum analyser A V V A Control voltage A Oscilloscope Hz Frequency meter Bias voltage IEC 1341/13 BS EN 60747-16-5:2013 – 34 – NOTE 60747-16-5  IEC:2013 The device being measured can contain a resonance circuit Figure – Circuit diagram for the measurement of the modulation bandwidth B mod 5.14.3 Principle of measurement In a practical VCO, frequency deviation for a constant modulation signal voltage V mod reduces as the frequency of modulation signal f mod increases The frequency at which the frequency deviation reduces to −3 dB (or 0,707) of the dc value is a measure of the frequency response of the control terminal It is defined as the modulation bandwidth B mod In terms of frequency modulation (FM) system, the spectral response of a carrier follows a Bessel function characteristics The amplitude of the sideband signal is proportional to the nth order Bessel function J n ( β ) The carrier amplitude is proportional to the J ( β ), the first sideband amplitude is to J ( β ), etc Where β is named "modulation index" and defined by the following equation: β = ( frequency deviation ) / f mod = ( S f,v × Vmod ) / f mod (17) And the amplitude of the modulation signal is derived from: Vmod = ( β × f mod ) / S f,v (18) where S f,v is the tuning sensitivity of the VCO, V mod and f mod are the amplitude and frequency of the modulation signal respectively With certain values of β , there are nulls of the magnitude 5.14.4 Circuit description and requirements See the circuit description and requirements in 5.2.4 The output impedance of the signal generator is usually 50 Ω It can be transformed to an appropriate value by a transformer 5.14.5 Precautions to be observed See the precautions to be observed in 5.2.5 The whole voltage applied to control terminal shall not exceed its range 5.14.6 Measurement procedure The bias under specified conditions is supplied The oscillation frequency is set to the specified value The value P osc (V mod = 0) is measured by the spectrum analyser as the power of the unmodulated carrier The frequency of the modulation signal f mod is adjusted to a tenth of the anticipated modulation bandwidth B mod and the magnitude of modulation signal V mod is set to achieve a modulation index β of 2,4 using Equation (18) BS EN 60747-16-5:2013 60747-16-5  IEC:2013 – 35 – Ensure that the magnitude of the carrier is suppressed to less than −30 dB of P osc (V mod = 0) by tuning V mod finely Increase the modulation frequency f mod and the amplitude of modulation signal V mod slowly, keeping the ratio of V mod /f mod constant When the magnitude of carrier increases to −8 dB of P osc (V mod = 0), the modulation index β is equal to 1,697 (= 2,4 × 0,707) and the frequency deviation is reduced to −3 dB (or 0,707) from Equation (17) The value f mod ( β = 1,697) is read from the signal generator The modulation bandwidth B mod is equal to f mod ( β = 1,697) 5.14.7 Specified conditions – Ambient or reference-point temperature – Bias conditions – Oscillation frequency 5.15 5.15.1 Sensitivity flatness Purpose To measure the sensitivity flatness under specified conditions 5.15.2 Circuit diagram See the circuit diagram shown in Figure 5.15.3 Principle of measurement See the principle of measurement in 5.5.3 Sensitivity flatness δ S is derived from following equation: δS = Sdev × 100 Sref Sref = f osc,range Vmax -Vmin (20) f osc,range = f osc (Vmax ) − f osc (Vmin ) where V max is the specified maximum control voltage; V is the specified minimum control voltage; f osc (V max) is the oscillation frequency at the specified maximum control voltage V max; is the oscillation frequency at the specified minimum control voltage V ; f osc (V ) S dev is the maximum difference of the tuning sensitivity from the ideal tuning sensitivity S ref obtained as the ratio of the oscillation frequency range to the control voltage range See Figure Sensitivity flatness δ S is the value indicated in % BS EN 60747-16-5:2013 – 36 – 60747-16-5  IEC:2013 Sf,v Sdev Sref Control voltage Vmin Vmax IEC 1342/13 Figure – Sensitivity flatness 5.15.4 Circuit description and requirements See the circuit description and requirements in 5.2.4 5.15.5 Precautions to be observed See the precautions to be observed in 5.2.5 5.15.6 Measurement procedure The bias under specified conditions is supplied Vary the control voltage in the specified range Obtain the maximum difference of the tuning sensitivity in the specified control voltage by using the measurement procedure in 5.5.6 The sensitivity flatness δ S is derived from Equation (20) 5.15.7 Specified conditions – Ambient or reference-point temperature – Bias conditions – Control voltage range Verifying methods 6.1 Load mismatch tolerance ( Ψ L ) 6.1.1 Purpose To verify the load mismatch tolerance under specified conditions 6.1.2 6.1.2.1 Verifying method (spurious intensity) Circuit diagram See the circuit diagram shown in Figure BS EN 60747-16-5:2013 60747-16-5  IEC:2013 6.1.2.2 – 37 – Circuit description and requirements See the circuit description and requirements in 5.7.4 6.1.2.3 Precautions to be observed See the precautions to be observed in 5.7.5 6.1.2.4 Test procedure The bias under specified conditions is supplied In case of VCO, the oscillation frequency is set to the specified value The load VSWR is set to the specified value by adjusting variable attenuator The phase angle is swept continuously by varying the length of the line stretcher Spurious components less than the specified intensity are confirmed by using the spectrum analyser at all phase angles NOTE Instead of the line stretcher, slide screw tuner can be used An automatic stub-tuner or an electronic tuner is also used to enable the specified VSWR for convenience The demerit of the tuners is that phase condition is discrete and cannot be swept continuously 6.1.2.5 Specified conditions – Ambient or reference-point temperature – Load VSWR – Bias conditions – In case of VCO, oscillation frequency – Spurious intensity 6.1.3 6.1.3.1 Verifying method (no discontinuity of frequency tuning characteristics of VCO) Circuit diagram See the circuit diagram shown in Figure 6.1.3.2 Circuit description and requirements See the circuit description and requirements in 5.7.4 The control supply (voltage source) shall be capable of sweeping the output voltage electronically 6.1.3.3 Precautions to be observed See the precautions to be observed in 5.7.5 6.1.3.4 Test procedure The bias under specified conditions is supplied The sweep voltage range of the control supply is set to the specified value The load VSWR is set to the specified value by adjusting variable attenuator BS EN 60747-16-5:2013 – 38 – 60747-16-5  IEC:2013 The phase angle is swept continuously by varying the length of the line stretcher The oscillation frequency is swept continuously and repeatedly by varying the control voltage from minimum voltage to the maximum voltage during all that time No discontinuity of the frequency tuning characteristics is confirmed by using the spectrum analyser at all phase angles NOTE Instead of the line stretcher, slide screw tuner can be used An automatic stub-tuner or an electronic tuner is also used to enable the specified VSWR for convenience The demerit of the tuners is that phase condition is discrete and cannot be swept continuously 6.1.3.5 Specified conditions – Ambient or reference-point temperature – Load VSWR – Bias conditions – Control voltage range 6.2 6.2.1 Load mismatch ruggedness ( Ψ R ) Purpose To verify the load mismatch ruggedness under specified conditions 6.2.2 Circuit diagram See the circuit diagram shown in Figure 6.2.3 Circuit description and requirements See the circuit description and requirements in 5.7.4 6.2.4 Precautions to be observed See the precautions to be observed in 5.7.5 6.2.5 Test Procedure DC and RF characteristics are measured under specified conditions before the following load mismatch test procedure The load reflection coefficient or VSWR is set to the specified value by adjusting variable attenuator The bias under specified conditions is supplied The phase angle is swept continuously by varying the length of the line stretcher The device is kept in operation during the specified operation time at all phase angles DC and RF characteristics are measured under specified conditions once more Load mismatch ruggedness Ψ R is verified using specified degradation criteria of DC and RF characteristics BS EN 60747-16-5:2013 60747-16-5  IEC:2013 6.2.6 – 39 – Specified conditions – Ambient or reference-point temperature – Load reflection coefficient or VSWR – Bias conditions – Operation time – Degradation criteria of DC and RF characteristics – Measurement conditions of DC and RF characteristics BS EN 60747-16-5:2013 – 40 – 60747-16-5  IEC:2013 Bibliography IEC 60679-1:2007, Quartz crystal controlled oscillators of assessed quality – Part 1: Generic specification _ This page deliberately left blank NO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAW British Standards Institution (BSI) BSI is the national body responsible for preparing British Standards and other standards-related publications, information and services BSI is incorporated by Royal Charter British Standards and other standardization products are published by BSI Standards Limited About us Revisions We bring together business, industry, government, consumers, innovators and others to shape their combined experience and expertise into standards -based solutions Our British Standards and other publications are updated by amendment or revision The knowledge embodied in our standards has been carefully assembled in a dependable 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