The DatasheetArchive Datasheet Search Engine ©2002 Fairchild Semiconductor Corporation Rev A3, September 2002 K SA 1015 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwi[.]
KSA1015 KSA1015 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage : VCBO= -50V • Complement to KSC1815 TO-92 1 Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -50 Units V VCEO VEBO Collector-Emitter Voltage -50 V Emitter-Base Voltage -5 IC Collector Current V -150 mA IB Base Current -50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 °C TST9 Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min -50 BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 ICBO Collector Cut-off Current VCB= -50V, IE=0 IEBO Emitter Cut-off Current VEB= -5V, IC=0 hFE1 hFE2 DC Current Gain VCE= -6V, IC= -2mA VCE= -6V, IC= -150mA VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA VBE (sat) Base-Emitter Saturation Voltage IC= -100mA, IB= -10mA fT Current Gain Bandwidth Product VCE= -10V, IC=-1mA Typ Max V V 70 25 -0.1 µA -0.1 µA 400 -0.1 -0.3 -1.1 80 Cob Output Capacitance VCB= -10V, IE=0, f=1MHz NF Noise Figure VCE= -6V, IC= -0.1mA f=100Hz, RG=10kΩ Units V V V MHz pF 0.5 dB hFE Classification Classification O Y GR hFE1 70 ~ 140 120 ~ 240 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev A3, September 2002 KSA1015 Typical Characteristics 1000 -50 VCE = -6V IB = -400µ A IB = -350µ A -40 IB = -300µ A -35 IB = -250µ A -30 IB = -200µ A -25 -20 IB = -150µ A -15 IB = -100µ A -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 10 IB = -50µ A -5 -0.1 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -1 Figure DC current Gain -10 -100 IC=10IB VCE =-6V IC[mA], COLLECTOR CURRENT VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE Figure Static Characteristic -0.1 -100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -10 VBE(sat) V CE(sat) -0.01 -0.1 -1 -10 -10 -1 -0.1 -0.0 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE (sat)[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure Base-Emitter On Voltage 1000 VCE=-6V 10 hFE, DC CURRENT GAIN Cob[pF], CAPACITANCE f=1MHz IE =0 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure Current Gain Bandwidth Product Rev A3, September 2002 KSA1015 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev A3, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein: Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only ©2002 Fairchild Semiconductor Corporation Rev I1