Estimation of the electrical characteristics of PIN diode after Proton-Irradiated based on Monte carlo code

The study Estimation of the electrical characteristics of PIN diode after Proton-Irradiated based on Monte carlo code describes the correlation between radiation damages and electrical properties of the PIN diode after irradiation of the energy proton. The findings show that the penetration of protons into the PN diode leads to lattice defects in the form of vacancies, defect clusters, and dislocations.

Estimation of the Electrical Characteristics of PIN diode after Proton-Irradiated based on Monte Carlo code Hoang Sy Minh Tuan1, * Institute of Applied Technology - Thu Dau Mot University, 6, Tran Van On, Phu Hoa Ward, Thu Dau Mot City, Binh Duong, Vietnam, 820000 *hoangsyminhtuan@tdmu.edu.vn Abstract The present study describes the correlation between radiation damages and electrical properties of the PIN diode after irradiation of the energy proton The PN diodes were irradiated at difference irradiation energies of 5.26, 7.2, and 8.67 MeV with the proton doses of × 1010, × 1011, and × 1012 cm-2 The final 3D distribution of the ions and all kinetic phenomena associated with the ion energy loss, such as vacancies, sputtering, ionization, and phonon production, can be estimated using the calculation packages (SRIM/TRIM) The findings show that the penetration of protons into the PN diode leads to lattice defects in the form of vacancies, defect clusters, and dislocations As to the ionization effects in the PN diode, the total ionizing dose and single event effects were also calculated In practical terms, the capacitance-voltage and current-voltage characteristics of the PN diode after irradiation has been measured to deduce the correlation between the damage creations and the electrical properties Tóm tắt Nghiên cứu mô tả mối tương quan thiệt hại xạ tính chất điện diode PIN sau chiếu xạ proton lượng Các điốt PN chiếu xạ lượng chiếu xạ khác 5,26, 7,2 8,67 MeV với liều proton × 1010,1 × 1011 × 1012 cm-2 Sự phân bố 3D cuối ion tất tượng động học liên quan đến lượng ion, chẳng hạn vị trí lỗ trống, phún xạ, ion hóa sản xuất phonon, ước tính cách sử dụng gói tính toán (SRIM/TRIM) Các phát cho thấy xâm nhập proton vào diode PN dẫn đến việc sản xuất khuyết tật mạng lưới dạng vị trí tuyển dụng, cụm khuyết tật trật khớp Đối với hiệu ứng ion hóa diode PN, tổng liều ion hóa hiệu ứng kiện đơn tính tốn Về mặt thực tế, đặc tính điện áp điện áp điện áp dòng điện diode PN sau chiếu xạ đo để suy mối tương quan sáng tạo thiệt hại tính chất điện Keywords: Radiation damage; SRIM/TRIM; Proton; Semiconductor device 170 Introduction The structural product made up of electronic semiconductor components is widely applied in life, especially in electronics, communication, industries, etc., especially in mobile devices, computers, automobiles, etc Contributing much to the development of semiconductor component revenue development is applied in data processing, communication, electronic consumption Besides, the semiconductor components are susceptible to the effects of radiation However, they are the fundamental components of electronic circuits in high-radiation devices such as radiation measurement systems at nuclear power plants or research reactors, radiology machines at medical centers, semiconductor and microchip components used in satellites or spacecraft, military applications, and more Therefore, the study of the effect of radiation in semiconductors is a broad and complex topic Assessing the operational characteristics and tolerance of semiconductor components in radiation environments is interesting to scientists worldwide During irradiation, the duration of projection can be controlled by the dose of radiation, for which the dose of radiation can be measured correctly by controlling the flow intensity during irradiation Irradiation is the cause of reduced survival time of minority lead particles and reverse recovery time in semiconductor devices The degree of reduction depends on the form, energy, and fluence of the radiation used The irradiation will also increase the voltage drop, an essential parameter in high-pressure devices Incoming voltage drop is an essential factor in high-energy devices, as it will determine the loss of heat in the device during conduction When a material is irradiated with high-energy radiation, the forms' defects play the role of reunion centers and reduce the electrical bearing particle Most applications of diodes require a minimum voltage change to an incoming voltage drop with a change in switching time Diodes can achieve this by high-energy radiation The correct dose to reduce the desired switching time can be found by irradiating the diodes in different doses There are numerous studies [1, 2] on various aspects of displacement due to displacement and its effect on semiconductor materials and devices when irradiated that have been conducted for Ge semiconductors [3] and Si [4] At the same time, electronic characteristics are sensitive to shifting errors in the Si and Ge semiconductors when irradiated [5] Studies of the radiation effect on semiconductor devices sensitive to displacement are conducted with bipolar transistors, solar cells, and charging docking devices (CCDs) Many of the papers presented at the NSREC conference [6] have been incorporated into shifting error effects in bulk semiconductor materials, diodes, solar cells and other photoelectric devices, microwave devices, JFE (Junction FieldEffect transistors), bipolar transistors, and semiconductor balls of elemental integrated circuits (TTL) and ECL (Emitter-Coupled Logic) In addition, the articles mention the wrong effects of displacement in solar cells, GaAs devices, particle detectors, diodes, and bipolar transistors During the 1993-2003 period, many topics were covered, including shifting error effects in bulk semiconductor materials, bipolar technology, solar cells, photoelectric machines, possible imaging arrays, infrared devices, SiC devices, GaAs devices, InP devices, LED (Light-Emitting Diodes), laser diodes, particle detectors, HEMT (High Electronic Mobility Transistors), photodiodes and GaN Other areas to be dealt with include NIEL (Non-Ionizing Energy Loss) identification, false correlation, and synergistic effects of ionizing radiation and shifting error In 171 the most recent period (2003-2018), studies focused on shift error effects in SDRAM (Synchronous Dynamic Random-Access Memories) and memory devices In addition, there are fundamental analyses and calculations of errors caused by displacement and its effects During this period, the study focused on shift error, the correlation of effects on devices produced by different particles (electrons, protons, and neutrons) that are considered essential keys to understanding the mechanism of failure [7],[8] Due to their particular structure with some superior features, PIN diodes should often be applied in high voltage rectifying, optical sensor devices, or in RF applications that degrade and switch elements However, PIN diodes have the characteristic that poor reverse recovery time contributes to power loss The use of proton beams projected onto the PIN diode to assess the PIN diode's characteristics and increase the diode's recovery time is considered The study aims to assess the properties of PIN diodes caused by the radiation effect of beaming proton beams at different energy levels and dosages PIN diodes are specifically designed in Korea, followed by proton irradiation samples at the University of Natural Sciences of Hanoi National University The diode samples were then measured for I-V and C-V characteristic curves at the Ho Chi Minh City High-Tech Park The measurement of the specific routes of the PIN diode before and after the proton projection will give us a visual view of the effect of the distance caused by the proton beam on the PIN diode Methods The irradiated properties of electrons, protons, and fast neutrons are summarized in Table Electron and proton acceleration beams are commonly used The energy electrons make the errors evenly in the material The majority of recoil atoms can redemptively combine their vacant position, which is explained because the recoiling atoms remain around their original network position because of the small electron's small drive Protons effectively create defects by shifting enough momentum to network atoms to recede from their original positions, although the failures are local because of their inherent braking yield at Bragg Peak before stopping completely Electronic and proton irradiation methods improve the characteristics of the conversion Table 1: Compare radiation beams in adjusting the lifetime of load particles Radiation Damage Source Electron Gamma Proton Neutron Acceleration Co-60 Acceleration Reactor 10 keV~ Energy 0.4~10 MeV ~ 1.33 MeV 1.5~15 MeV 10 MeV 172 Effect granny Electron Electronic Proton Fast neutrons By depth Uniform Compton Almost Almost evenly evenly Misdistributed Cathode N+ Cathode N- Anode N+ N- P+ Anode P+ 2.1 Overview of SRIM/TRIM SRIM (Stopping and Range of Ions in Matter) is a well-known computer program for calculating the interaction of ions in matter The core of the simulation software is TRIM (TRansport of Ions in Matter), a Monte Carlo computer program developed by James F Ziegler that calculates the interaction of energetic ions with amorphic targets TRIM is a group of programs that effectively calculate ions' braking and running yield (10 eV ( GeV/amu) based on statistical algorithms TRIM software became popular due to its easy-to-use user interface, where input parameters can be systematically adjusted Different types of calculations and outputs can be selected They are displayed and saved as cells or lists of parameters The program package contains tables and charts related to the experimentally determined run and braking productivity for the most common materials SRIM/TRIM is widely used to calculate the process parameters involved in ion implantation and ion irradiation in the material This program is used to calculate how much radiation is destroyed by ion radiation, i.e., shifting per atom (DPA) In the field of radiation damage, DPA is widely used as a standard unit for damage caused by the original radiation, so researchers introducing ion beams of radiation damage need to know how to use SRIM In this study, SRIM/TRIM is used to investigate the loss of ionizing energy and proton running distances in diode PIN components 2.2 Design and order the production of PIN diodes The PIN diode used to project protons within the framework of this thesis was designed and manufactured at the Electric and Telecommunications Research Institute (ETRI) [9] in Korea with structures (Figures and 2) and the following parameters: 173 Figure Design structure and size of PIN diodes The PIN diode produced from the p-type Si FZ (TO-5) Si FZ wafer has a crystal presence of 111 and impeding is 150 m with the parameters in Table Si FZ is a very pure Si produced by vertical region melting Compared to the Czochralski method, the crystals of Si FZ have higher purity Due to the low impurities in the Si FZ wafer, it is easy to control defects and increase mechanical intensity Si FZ has a very high yield distribution, used primarily in probes The N adjoin is formed by phosphorus diffusion with a depth of 3.6 μm The SiO2 pole has a thickness of 700 nm The two diode sides with metal contact with the upper side are Al with a thickness of μm, and the underside is Cr (50 nm) or Au (80nm) Table 2: The parameters of the wafer Si FZ used to make the PIN diode Material FZ-Si Size (cm) 10.16 Direction (111) Thickness (μm) 400 ± 10 Dop Phosphorus Impedism (.m) 50 - 5000 Polishing Two sides 174 Figure The actual shape of the PIN diode is made at the ETRI Institute a Experimental After fabrication, the PIN diode samples were sent to the University of Natural Sciences of Hanoi National University irradiated with proton beams with 1010, 1011 and 1012 proton dosage levels.cm-2, respectively SRIM/TRIM is used to calculate the PKA and DPA values for PIN diodes with proton energy levels and fluctuating Pin diode samples after proton projection are brought to the Center for Research and Deployment of The High-Tech Park under the Management Board of ho Chi Minh City High-Tech Park to measure the parameters Keithley's I-V model 4200 SCS special line measurement system (USA) is equipped at the Center for Research and Deployment of Hi-Tech Park under the Management Board of Ho Chi Minh City Hi-Tech Park A world-class computer controls the Keithley 4200 system, and the DC series via the model is up to 210V/100 mA with a current resolution of 0.1 fA (Figure 3) The signals and currents obtained from the sample during the measurement are transmitted to the computer, and the KTEI software will process, display, and receive the measurement process This Keithley 4200 measuring system has been standard in component measurement, semiconductor microchip, with the advantages: high accuracy and stability, the current is measured to pA, so it is possible to accurately measure the current value especially with components with a very thin film of several nm, capable of exporting data or analyzing directly using integrated software 175 Figure I-V model 4200 SCS V specialline measurement system at the Center for Research and Deployment of Hi-Tech Park Results and Discussions Figure describes the direction of proton projection for PIN diodes with different energy levels and dosages The proton energy levels selected for PIN diode projection are 5.26; 7.2, and 8.67 MeV at the implant channel of the 5SDH-2 Pelletron accelerator with dosage levels of 1010, 1011, and 1012 proton.cm-2, respectively Pin diode models are placed in the projection chamber with × 10-9 torr pressure The PIN diode is mounted on a vertical metal ladder that allows direct contact with the beam and avoids energy loss during projection The irradiation is performed at room temperature with projection doses from 1010 to 1012 proton.cm-2 The beam always maintains the flow strength at 100 mA to avoid thermal effects A 2× mm beam is scanned on 12 × 12 mm2 using a magnetic scanner for uniform irradiation of diodes 176 Figure The model describes the direction of proton projection for PIN diodes with different energy levels and quantities 3.1 Use SRIM/TRIM software to calculate the PKA and DPA values for PIN diodes with proton energy levels and flum throughput Since SRIM/TRIM software can only simulate pencil beams, it is necessary to incorporate an SRIM-Supporting Software Module (SSSM) program to simulate an experimental proton beam This is a program capable of creating an ion beam with characteristic parameters (Figure 5) Figure Simulation of incoming proton beams using the TRIM program in combination with SSSM: (a) Standard TRIM Simulation, (b) Emission diagram of the beam generated; (c) Simulation of the actual size of the beam; (d) Simulation of the chromatic effect 3.2 The results calculated the scattering of the lost energy of the proton beam until the PIN diode with a thickness of 400 μm To understand the degradation in PIN diodes when projecting protons, it is necessary to analyze the effect of proton projection on the device structure and the role of the associated energy loss mechanism Se Elastic collisions with nuclei known as S loss nuclear power, which is preeminent with about keV/amu; and non-elastic collisions of protons with the atomic 177 electrons of diodes known as loss electrons, which dominate at the energy of about MeV/amu or more In insatiable collisions (category ~10-16 cm2), energy is transferred from protons to Si atoms in diodes through stimulating and ionizing surrounding electrons Electronic energy loss in each collision varies from tens of eV to a few keV per Angstrom The energy loss of protons is much smaller than the electronic energy loss in the diode's Si material due to the more negligible elastic scattering As a result, the maximum energy accumulated for the material is mainly due to the loss of electronic energy during passage through the Si material Figure Proton beam simulation Figure describes proton energy levels of 5.26; 7.2 and 8.67 MeV were selected for irradiation because based on trim software simulation results, the lost energy dispersion is within the thickness of the PIN diode and stops at the P+, P zone, P-N+ intersection of PIN diodes (Table 3) Proton beams irradiate the diodes with energy (Ep) of 5.26, 7.2, 8.67 MeV, and proton dosages are changed from 1×1010, 1×.1011, 1×1012 cm−2 per energy value Table 3: Proton energy dispersion zone in PIN diode with different energy levels Energy Depth Projection (MeV) (µm) 5.26 230 P+ Zone Back 7.20 320 Diode Center (P zone) Back 8.67 400 AdjojomingN+-P- Back Location direction 178 3.3 The number of DPA generated by PKA is calculated in TRIM with an Ed energy of 15 eV (Figure 7): Figure The correlation between DPA and PKA with Ed energy is 15 eV 3.4 The number of DPA generated by PKA is calculated in TRIM with an Ed energy of 15 eV (Figure 8): Figure Mis-distributed in PIN diodes for 5.26 energy proton beams; 7.2 and 8.67 MeV 3.5 The number of DPA generated by PKA is calculated in TRIM with an Ed energy of 15 eV (Figure 9): 179 Figure The wrong distribution in THE PIN diode in 3D for incoming proton energy is 5.26 and 7.20 MeV The graph is drawn using TRIM software 3.6 The DPA distribution in THE PIN diode is calculated by simulation via TRIM software (Figure 10): Figure 10 DPA distribution in PIN diodes is calculated using TRIM software 3.7 I-V characteristic curves of PIN diodes The I-V characteristic curves are measured using the Keithley 4200 system connected to a computer via KEI software to measure PIN diode patterns before and after proton projection 180 The I-V special gland before and after irradiation is measured by changing the V voltage from to 1.2 V (a) (b) 181 (c) Figure 11 I-V characteristic curves of PIN diodes with proton projection dose of (a) 1010cm2 , (b) 1011cm-2, (c) 1012cm-2 Figure 11 shows that the lower the energy level, the higher the I-V of the PIN diode With projection power levels of 7.2 and 8.67 at the 1012projection dose, the characteristic curves are almost horizontal, and the PIN diode is destroyed The threshold voltage (Vth) is determined when the I series strength is mA and is used to characterize PIN diodes before and after proton projection We have the results of Vth before and after irradiation (Table 4) Table 4: Threshold voltage (Vth) before and after proton projection with different projection doses Proton Energy Vth (V) (MeV) 1010 cm-2 1011 cm-2 1012 cm-2 non-irradiation 0.9 0.9 0.9 5.26 0.84 0.84 0,84 7.2 0.85 1.00 Destroy 8.67 0.88 1.04 Destroy Based on the results obtained in Table when measuring I-V special glands with different proton projection doses and proton energy levels of 5.26, 7.2, and 8.67 MeV We see that with a 182 proton projection dose of 1010 cm-2, the Vth value before the proton projection is 0.9 V, while after the projection, Vth decreases to 0.84; 0.85 and 0.88 V respectively for the projected energies of 5.26; 7.2 and 8.67 MeV For proton projection doses of 1011 cm-2, the Vth value before proton projection is 0.9 V After the screening, Vth decreased to 0.84 V with an energy of 5.26 MeV but increased to and 1.04 V respectively with projected energies of 7.2 and 8.67 MeV For proton projection doses of 1012 cm-2, the Vth value before proton projection is 0.9 V After the screening, Vth decreased to 0.89 V with an energy of 5.26 MeV The PIN diode is destroyed with projection power levels of 7.2 and 8.67 MeV The change in Vth threshold voltage can be explained by the appearance of traps at the adjoining layerS SiO2 and Si born after proton projection Traps form in the energy region of Si because of the decline in Si's flexibility and alter the resistance of diodes 3.8 I-V characteristic curves of PIN diodes The leakage current of the -2 V reverse voltage is measured by reverse voltage for PIN diodes The result is that IL increases with increased energy and proton projection dose (a) 183 (b) (c) Figure 12: I1L leakage flow of PIN diodes with proton projection dose of 1010 cm-2, (b) 1011 cm-2, (c) 1012 cm-2 The observed Table results may be caused by proton radiation in the SiO2 layer of the contiguity region that increases the recombination velocity of the surface The charge in the oxide increases the diode surface voltage causing the rate of diode recombination to increase as electron concentrations and holes become equivalent Therefore, the switching speed of the PIN diode decreases due to a decrease in voltage with increased leakage current Table 5: I211L leakage flow of PIN diodes before and after proton projection with different projection dose levels Proton Energy (MeV) non-irradiation IL (nA) 1010 cm-2 1011 cm-2 1012 cm-2 0.25 0.25 0.25 184 5.26 3.2 3.29 3.97 7.2 3.26 4.29 4.95 8.67 4.59 4.98 7.58 3.9 C-V characteristic curves of PIN diodes (a) (b) 185 (c) Figure 13 The C-V characteristic curves of the PIN diode with a proton projection dose of (a) 1010 cm-2, (b) 1011 cm-2, (c) 1012 cm-2 The C-V characteristic curves are analyzed to test the change in doped concentration according to energy levels and proton doses (Figure 13) The voltage range used to measure C is from -5 V with a band of 1kHz The C-V specific measurement results show that with proton energy of 8.67 MeV, the C-V special route is different from the rest of the projected energy levels Conclusions Simulated error parameters when projecting protons onto a PIN diode with proton energy levels of 5.26, 7.2, 8.67 MeV and proton dosages were changed from 1×1010, 1×1011, 1×1012 cm−2 per energy value I-V, C-V characteristic curves and IL and Vth values have been measured, and through the obtained values, it is possible to assess the effect of proton beams on PIN diodes with different energy levels and dosages The results obtained and the arguments are consistent with published studies demonstrating the reliability of these study results References [1] J R Srour, C J Marshall, and P W Marshall, "Review of displacement damage effects in silicon devices," IEEE Trans Nucl Sci., vol 50, no 3, pp 653–670, Jun 2003 [2] M Lannoo and J Bourgoin, Point Defects in Semiconductors I: Theoretical Aspects, ser Springer Series 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1882–1888, Dec 1989 [9] Stoller, R E., Toloczko, M B., Was, G S., Certain, A G., Dwaraknath, S., & Garner, F A (2013) On the use of SRIM for computing radiation damage exposure Nuclear instruments and methods in physics research section B: beam interactions with materials and atoms, 310, 7580 187 ... Park The measurement of the specific routes of the PIN diode before and after the proton projection will give us a visual view of the effect of the distance caused by the proton beam on the PIN diode. .. the loss of ionizing energy and proton running distances in diode PIN components 2.2 Design and order the production of PIN diodes The PIN diode used to project protons within the framework of. .. because based on trim software simulation results, the lost energy dispersion is within the thickness of the PIN diode and stops at the P+, P zone, P-N+ intersection of PIN diodes (Table 3) Proton