Tài liệu RF và mạch lạc lò vi sóng P11 ppt
Tài liệu RF và mạch lạc lò vi sóng P11 ppt
... nonlinear active device. In addition, since the
device is producing RF power, it must have a negative resistance.
The basic principle of an oscillator circuit can be explained via a linear feedback
system ... Abrupt
junction diodes provide very high Q and also operate over a very wide tuning voltage
range (typically, 0 to 60 V). These diodes provide an excellent phase noise
performance beca...
Tài liệu RF và mạch lạc lò vi sóng P1 ppt
... areas
where RF technology is being applied. While some of these applications have
traditionally used infrared (IR) technology, current trends are moving toward RF. The
fact is that RF is superior ... system.
Figures 1.3 and 1.4 list selected devices used at RF and microwave frequencies.
Solid-state devices as well as vacuum tubes are used as active elements in RF and
microwave circui...
Tài liệu RF và mạch lạc lò vi sóng P5 pptx
... re¯ection coef®cient of 0.2 is
acceptable, circuits (iii) and (iv) can provide much wider bandwidth in comparison
with those of the previous example. This concept can be used to shape the re¯ection
coef®cient ... signal
generator. It is to be matched with a 100-O load. Design a matching circuit that
provides perfect matching over the frequency band of 1 kHz to 1 GHz.
Determine power delivered...
Tài liệu RF và mạch lạc lò vi sóng P6 ppt
... such
requirements. The chapter begins with the single-section impedance transformer
that provides perfect matching at a single frequency. Matching bandwidth can be
increased at the cost of a higher ... Hence,
G
in
L
0
dG
in
1
2
L
0
e
Àj2bz
d
dz
ln
Zdz 6:7:3
Therefore, G
in
can be determined from (6.7.3) provided that
Zz is given. However,
the synthesis problem is a bit compl...
Tài liệu RF và mạch lạc lò vi sóng P7 pptx
... Z
o2
Z
2
Z
o2
b
2
a
2
7:6:22
Dividing (7.6.17) by a
1
and then using (7.6.21), we ®nd
b
1
a
1
G
1
Z
1
À Z
o1
Z
1
Z
o1
S
11
S
12
a
2
a
1
7:6:23
Now, dividing (7.6.18) by a
2
and then ... jb, the network becomes lossless. In that case,
S
11
S
12
S
21
S
22
!
0 e
Àjb`
e
Àjb`
0
!
Obviously, it is a unitary matrix now.
Example 7.19: Find scattering parameters of the two-por...
Tài liệu RF và mạch lạc lò vi sóng P8 ppt
... devise some way to control its
attenuation around the cutoff. Expression for the propagation constant of a T-section
is listed in Table 8.1. In order to ®nd g of this T-section, we ®rst divide ... two-port network. Filters have been designed using active devices such as
transistors and operational ampli®ers, as well as with only passive devices (inductors
and capacitors only). Therefore, thes...
Tài liệu RF và mạch lạc lò vi sóng P2 pdf
... applications and circuit design. In RF
and Microwave Circuit Design for Wireless Communications, L. E. Larsen (ed). Boston:
Artech House, 1996.
B. Razavi, RF Microelectronics. Englewood Cliffs, ... bandwidth of an antenna is de®ned as the frequency band
over which its performance with respect to some characteristic (HPBW, directivity,
etc.) conforms to a speci®ed standard.
Polarization
Po...
Tài liệu RF và mạch lạc lò vi sóng P3 docx
... converted to corresponding
impedance by moving to a point on the diametrically opposite side of the VSWR
circle. It shows a normalized load impedance as 2 j2. Moving from this point by
3.15 l toward ... transformer is also presented
along with a few examples to match resistive loads. Impedance measurement via the
voltage standing wave ratio is then discussed. Finally, the Smith chart is int...
Tài liệu RF và mạch lạc lò vi sóng P4 docx
... CIRCUITS
If the cavity is made of a perfect conductor and ®lled with a perfect dielectric then
it will have in®nite Q. However,it is not possible in practice. In the case of cavity
walls having a ®nite ... 3417,respectively.
Substituting these into (4.5.5), Q of this cavity is found to be 2106.
Circular Cylindrical Cavities
Figure 4.20 shows the geometry of a circular cylindrical cavity of ra...
Tài liệu RF và mạch lạc lò vi sóng P9 docx
... SIGNAL-FLOW GRAPH REPRESENTATION OF A PASSIVE
SINGLE-PORT DEVICE
Consider load impedance Z
L
as shown in Figure 9.18. It is a single-port device with
port voltage and current V
L
and I
L
,respectively. ...
Z
S
Z
o
V
ref
S
E
S
À 1À
Z
S
Z
o
V
in
S
or,
V
ref
S
Z
o
Z
o
Z
S
E
S
À
Z
o
À Z
S
Z
o
Z
S
V
in
S
Dividing it by
2Z
o
p
,we ®nd that
V
ref
S
2Z
o
p
Z
o
Z
o
...
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