Tài liệu RF và mạch lạc lò vi sóng P3 docx
Tài liệu RF và mạch lạc lò vi sóng P3 docx
... converted to corresponding
impedance by moving to a point on the diametrically opposite side of the VSWR
circle. It shows a normalized load impedance as 2 j2. Moving from this point by
3.15 l toward ... impedance Z
L
to a
70
TRANSMISSION LINES
Measurementof Impedance
Impedance of a one-port microwave device can be determined from measurement on
the standing wave at its input. Those required...
Tài liệu RF và mạch lạc lò vi sóng P4 docx
... air-®lled circular cylindrical cavity that resonates at 9 GHz in TE
011
mode. It should be made of copper and its height should be equal to its diameter.
Find Q of this cavity.
22. Design a TE
01d
mode ... frequencies from a wide signal spectrum. Resonant circuits provide such
®ltering. There are well-developed,sophisticated methodologies to meet virtually
any speci®cation. However,a simple c...
Tài liệu RF và mạch lạc lò vi sóng P9 docx
... SIGNAL-FLOW GRAPH REPRESENTATION OF A PASSIVE
SINGLE-PORT DEVICE
Consider load impedance Z
L
as shown in Figure 9.18. It is a single-port device with
port voltage and current V
L
and I
L
,respectively. ...
Z
S
Z
o
V
ref
S
E
S
À 1À
Z
S
Z
o
V
in
S
or,
V
ref
S
Z
o
Z
o
Z
S
E
S
À
Z
o
À Z
S
Z
o
Z
S
V
in
S
Dividing it by
2Z
o
p
,we ®nd that
V
ref
S
2Z
o
p
Z
o
Z
o
...
Tài liệu RF và mạch lạc lò vi sóng P10 docx
... source
terminal of the MESFET via inductor L
S
. Capacitor C
S
grounds the source at RF
while L
S
blocks it from the dc supply. Inductor L
G
grounds the gate for dc while
stopping the RF. Similarly, bias ... S
21
6 180
Determine the maximum gain possible with this transistor and design an RF circuit
that can provide this gain.
(i) Stability check:
k
1 ÀjS
11
j
2
ÀjS
22
j
2
jDj
2...
Tài liệu RF và mạch lạc lò vi sóng P1 ppt
... areas
where RF technology is being applied. While some of these applications have
traditionally used infrared (IR) technology, current trends are moving toward RF. The
fact is that RF is superior ... system.
Figures 1.3 and 1.4 list selected devices used at RF and microwave frequencies.
Solid-state devices as well as vacuum tubes are used as active elements in RF and
microwave circui...
Tài liệu RF và mạch lạc lò vi sóng P2 pdf
... This chapter begins with an overview
of microwave communication systems and the radio frequency wireless services to
illustrate the applications of circuits and devices that are described in the ... D
t
is the directivity of transmitting antenna.
Power collected by the receiving antenna is
P
r
A
er
w
t
2:4:19
From (2.4.6),
A
er
l
2
4p
G
r
2:4:20
where the receiving antenna gain is ......
Tài liệu RF và mạch lạc lò vi sóng P5 pptx
... at RF and microwave frequencies.
As shown in Figure 5.1, impedance matching networks are employed at the input
and the output of an ampli®er circuit. These networks may also be needed to perform
some ... on the upper scale of the Smith chart. Moving from this
point toward the load (that is counterclockwise), open-circuit admittance
(zero) is found ®rst. Moving further in the same direction,...
Tài liệu RF và mạch lạc lò vi sóng P6 ppt
... k
2
r
0:0247
which is approximately one-fourth of the previous (two-section transformer) case.
218
IMPEDANCE TRANSFORMERS
Z
1
is obtained by solving the equation (6.6.18) as follows,
Z
L
À Z
o
tan
2
y
z
Z
2
1
Z
o
... as well.
Exact formulation of the multisection impedance transformer is conveniently
developed via the power loss ratio, P
LR
, de®ned as follows:
P
LR
Power loss ratio ...
Tài liệu RF và mạch lạc lò vi sóng P7 pptx
... comprising
resistors, inductors, capacitors, and dependent sources. Thus, it may include
electronic devices but not the independent sources. Further, it has four terminals,
two for input and the other ... output of the signal. There may be a few more
terminals to supply the bias voltage for electronic devices. However, these bias
conditions are embedded in equivalent dependent sources. Hence,...
Tài liệu RF và mạch lạc lò vi sóng P8 ppt
... method is more powerful in
the sense that it provides a speci®ed response of the ®lter. Both of these techniques
are included in this chapter. It concludes with a design overview of microwave ... preceding section
provides a simple design procedure. However, transfer characteristics of this circuit
cannot be shaped as desired. On the other hand, the insertion loss method provides
ways to shap...
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