Room temperature ferromagnetism in nickel doped wide band gap ferroelectric bi0 5k0 5tio3 nanocrystals

... by Cu2+, Mn2+, Co2 + ions [7-11] In this paper, we study the role of color luminescence centers Cu, Mn, Co in the semiconductors with wide band gap of ZnS, ZnO and test application of ZnS:Cu material ... band is greater than that of the blue band As increasing the concentration of Cu, the intensity of the blue band decreases whi...

Ngày tải lên: 22/03/2014, 11:20

... promising candidates for spintronics materials The ferromagnetism mechanism in ZnO based and carbon based systems are probably similar [63] Therefore, to further study the ferromagnetism in carbon ... providing explanations for the high temperature ferromagnetism in ZnO materials, such as nonmagnetic metal clusters inducing ferromagnetism in metallic Zn doped...

Ngày tải lên: 10/09/2015, 15:50

... to magnetic properties, semiconductors can be classified as magnetic semiconductors, dilute magnetic semiconductors, and non -magnetic semiconductors in terms of the amount and distribution of magnetic ... Diluted magnetic semiconductors (DMS), alloys between nonmagnetic semiconductors and magnetic elements, are semiconductors formed by replacing a fraction of...

Ngày tải lên: 01/10/2015, 17:27

... integration of high- k dielectric with wide band- gap semiconductors 11 1.4 Research approaches 14 1.4.1 Nitridation treatment 14 1.4.2 Band offsets at high- k/ wide band- gap semiconductor ... offset and valence band offset between high- k dielectrics and wide band- gap semiconductors, respectively Band offsets above eV is one of the key criteria in t...

Ngày tải lên: 10/09/2015, 15:52

... alkaline element) are attracting considerable interest because they reveal interesting phenomena such as magnetoresistance, MCE, charge ordering, spin-glass behaviour, and magnetostriction effect ... reground to fine particles, and sintered at 12000C for 15 h The structure of samples was examined by using a Bruker D5005 X-ray diffractometer The microstructure was studied in a scanning ele...

Ngày tải lên: 28/03/2014, 13:20

... in a QW can be approximated Figure Power-dependence spin diffusion coefficient and spin lifetime (a) Spin diffusion coefficient Ds versus pump power, i.e., spin 0 density; the blue line ... Optical spin orientation in (110) GaAs quantum wells at room temperature Phys Status Solidic 2007, 4:475, Ohno Y, Terauchi R, Adachi T, Matsukura F, Ohno H: Spin relaxation...

Ngày tải lên: 21/06/2014, 05:20

... selection of a parsing strategy for an on-line machine translation system in a sublanguage domain A new practical comparison." In Proceedings o/the 1st International Workshop on Parsing Technologies ... rule invocation from cheap (static) rule indexing, using discrimination trees keyed on the feature values in each rule's first daughter to interleave rule access with unificat...

Ngày tải lên: 20/02/2014, 21:20

... dependency resolution can be obtained automatically for wide-coverage, robust, probabilistic LFG resources automatically acquired from treebanks We extract LFG subcategorisation frames and paths linking ... Linguistically Interpreted Corpora (LINC-03), pages 1–8, Budapest D Klein and C Manning 2003 Accurate Unlexicalized Parsing In Proceedings of the 41st Annual Meeting of th...

Ngày tải lên: 08/03/2014, 04:22

... as well as with higher annealing temperature Since these poly-Si grains are intended to serve as single- electron islands in laterally structured nanowires, the annealing time has to be very short ... poly-Si grains and is therefore ascribed to stronger electron conÿnement inside the grains at high magnetic ÿelds Summary In summary, we have fabricated single- electron devices out...

Ngày tải lên: 16/03/2014, 15:21

... with Si ions at room temperature One set of samples was implanted with 400 keV Si ions to doses of 0.6, 1.0, 2. 0, 3.0, 4.0 and 6.0;10 Si cm\, whilst a second set was implanted with five successive ... strongest emission is observed for a relatively narrow range of Si doses, corresponding to peak Si concentrations around 2; 10 Si cm\ The stronger emission afte...

Ngày tải lên: 16/03/2014, 15:26

... Butterworths–Heinemann, London, 1997, p 1008 [15] S Okazaki, H Nakagawa, S Asakura, Y Tomiuchi, N Tsuji, H Murayama, M Yashiya, Sensing characteristics of an optical fiber sensor for hydrogen leak 93 (2003) ... treat the phenomena within a single crystal to avoid the implications associated with grain boundaries It Fig A mechanism model for the hydrogen reduction H Nakagawa et al...

Ngày tải lên: 19/03/2014, 16:47

... electronegativity of the oxygen atom than that of the nitrogen atom The other is that there is a lone electron pair in NH3 What is more important is that lowtemperature ammonia oxidation was observed ... degree from State Key Laboratory of Silicon Materials at Zhejiang University in 2004 Now, he is a teacher at Zhejiang University His research interest is preparation and application...

Ngày tải lên: 19/03/2014, 16:47

... similar to the pore diameter of the template These LSCO nanotubes are put over two Pt/Ti electrodes The capacitive NH3 sensing properties of LSCO nanotubes were measured at room temperature by placing ... on a layer of silicon dioxide (SiO2 ) thermally grown on top of a silicon wafer The suspension of LSCO was strewn on the IDE fingers 63 Fig SEM image of LSCO nanotubes o...

Ngày tải lên: 20/03/2014, 13:04

... Conclusion We have investigated the ammonia sensing properties of W18 O49 nanowires prepared by a low temperature solvothermal technique The electrical resistance of W18 O49 nanowires is increased when ... behavior of the W18 O49 nanowires to ammonia is related with the ultra-thin diameter (less than nm) The high sensitivity of the W18 O49 nanowires in the detection...

Ngày tải lên: 20/03/2014, 13:07

... microscopy (SEM) sputter coating unit E-2500 before taking the image 2.3 LPG sensing properties p- polyaniline/ n- TiO2 heterojunction Fig A schematic representation of a p- polyaniline/ n- TiO2 heterojunction ... p- polyaniline/ n- TiO2 heterojunction at a fixed voltage of +2 V and at a concentration of 0.1 vol% LPG is concluded that the gas response is a function of LP...

Ngày tải lên: 20/03/2014, 13:07