SIMULATION OF GRAPHENE NANORIBBON FIELD EFFECT TRANSISTOR

... lift-off process A graphene FET with source-drain separation and top-gate length is shown in Figure [30] Figure Structure of top-gate graphene field- effect transistor [30] is used in our simulations ... Register, S.K Banerjee, and A.H MacDonald, Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field- effect transi...

Ngày tải lên: 12/06/2016, 08:14

... conductance of BS3- and Art KSI-labeled SiNW-FET remained constant on the addition of 19-NA up to 0.3 pM, indicating that the background disturbance of 19-NA is insignificant [Fig 5 (a) ; data for ... Lieber, Label-free detection of smallmolecule-protein interactions by using nanowire nanosensors, Proc Natl Acad Sci U.S .A 102 (2005) 3208–3212 [23] F.S Klawahara, S.F Wang, P Talal...

Ngày tải lên: 16/03/2014, 15:23

... 093504 (2013) Laser direct writing of silicon field effect transistor sensors Woongsik Nam,1,2 James I Mitchell,1,2 Chookiat Tansarawiput,2,3 Minghao Qi,2,3 and Xianfan Xu1,2,a) School of Mechanical ... fabricate silicon wires for field effect transistor sensors Boron-doped silicon wires are fabricated using laser direct writing in combination with chemical...

Ngày tải lên: 06/05/2014, 08:54

... result in the variation of the operation point, it is desirable to keep the current level constant over a range of temperatures In order to realize such operation of the nanoribbon FETs, we propose ... the bottom of the channel surface Table compares the off-state drain leakage portion of the two methods at different temperatures As shown in Table 1, in the case of method (1...

Ngày tải lên: 21/06/2014, 08:20

... this article as: Jones et al.: Comparison of Radioimmuno and Carbon Nanotube Field-Effect Transistor Assays for Measuring InsulinLike Growth Factor-1 in a Preclinical Model of Human Breast Cancer ... conditions in the University of Maryland, Baltimore animal facility and maintained in accordance with institutional guidelines approved by the Univ...

Ngày tải lên: 11/08/2014, 00:23

... Ballistic Transport and Device Limits, all conducted using the Ultra -Thin Body (UTB) devices with a sub- 10nm thin film In segment (1), we begins with an assessment of Si and Ge thin film semiconductors’ ... 2.2 34 34 An Analysis of Subband Structure and Electrostatics of Two-Dimensional Electron Gas in Thin Film Silicon and Germanium Semiconductor Using Effect...

Ngày tải lên: 13/09/2015, 21:19

Ngày tải lên: 05/03/2013, 17:10

... Đặc tuyến truyền dẫn ID(VGS) ID (mA) VGS = 5V VGS = 4V VGS = 3V VGS = 2V VGS = 1V VDS (v) Hình 5.16 Đặc tuyến ngõ ID(VGS) +V cc b Phân cực RG2 RD ID D G S 73 RG1 R ID Chương 5: Transistor hiệu ứng ... dòng thoát ID ID VGS = 0V IDSS VGS = -1V VGS = -2V VGS = -3V VGS = -4V VPO VDS (v) Hình 5.5 67 Chương 5: Transistor hiệu ứng trường Khi VGG...

Ngày tải lên: 19/09/2013, 17:03

... (c) Scanning electron microscope image of the electrodes connecting to the nanofibers as indicated in (b) dominated by an injection barrier between the injecting metal electrode and the organic ... compressing the nanofibers during the transfer, and the nanofibers were transferred by rolling the cylinder with the nanofibers onto the device substrates under conditions of high...

Ngày tải lên: 21/06/2014, 04:20

... considered, the conductance of the conduction and valence bands is always symmetrical as determined by the formulation of the energy dispersion relation, equation In the case of graphene nanoribbons, the ... close to the K point but significant discrepancies occur at higher energies Conductance of Graphene Nanoribbons and Junctions Conductance in graphen...

Ngày tải lên: 21/06/2014, 11:20

... manuscript No (will be inserted by the editor) Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight-binding π-bond model Sai-Kong Chin∗1 , Kai-Tak ... of states and transmissions characteristics with that of the more expensive transport calculations for the tight-binding π-bond model Keywords: graphene na...

Ngày tải lên: 21/06/2014, 17:20

... cương phân loại • FET ( Field Effect Transistor) -Transistor hiệu ứng trường – Transistor trường • Có loại: - Junction field- effect transistor - viết tắt JFET: Transistor trường điều khiển tiếp ... semiconductor transistor (viết tắt MOSFET) • Trong loại transistor trường có cực cửa cách điện chia làm loại MOSFET kênh sẵn (DE-MOSFET) MOSFET kênh cảm ứng (E-MOSFE...

Ngày tải lên: 05/07/2014, 12:20

... 1.1.1 Graphene in carbon family 15 1.1.2 Electronic properties of graphene 17 1.1.3 Band structure in graphene 18 1.1.4 Band gap in graphene nanoribbon (GNR) 19 1.2 Thermoelectrical ... Thermoelectrical properties of graphene 21 1.2.1 Seebeck coefficient and the figure of merit ZT 21 1.2.2 Thermoelectrical properties in graphene 23 1.3 Chapter 2.1 Objective and s...

Ngày tải lên: 02/10/2015, 17:13

... CHAPTER 4: Characteristics Field- Effect Transistor CHAPTER 4: CHARACTERISTICS OF FIELD- EFFECT TRANSISTOR 4. 1 INTRODUCTION The operation of the field- effect transistor (FET) ... values of vDS in the pinchoff region:  v  iD  I DSS   GS   V  p0   Val de Loire Program p.61 CHAPTER 4: Characteristics Field- Effect Transistor 4. 4 JFET BIAS LINE AND...

Ngày tải lên: 18/05/2014, 18:57

... perpendicular external magnetic field, both for the case of a single potential kink, as well as for a kink-antikink pair One advantage of such a setup is the fact that in an experimental realization of ... levels of a kink-antikink potential as function of an external magnetic field for (a) ky = and (b) ky = 0.2 For the kink-antikink case, the overlap b...

Ngày tải lên: 21/06/2014, 02:20