field effect transistor model maker
báo cáo khoa học: " Comparison of Radioimmuno and Carbon Nanotube Field-Effect Transistor Assays for Measuring Insulin-Like Growth Factor-1 in a Preclinical Model of Human Breast Cancer" doc
... nanotube field effect Biosens Bioelectr 2009, 24:3372-3378 doi:10.1186/1477-3155-9-36 Cite this article as: Jones et al.: Comparison of Radioimmuno and Carbon Nanotube Field- Effect Transistor ... investigated the possibility of using a carbon nanotube field- effect transistor (CNT-FET) to measure serum IGF-1 levels in the Brca1-associated mouse model of human breast cancer This assay was compared ... BRCA1: Breast Cancer Susceptibility gene; CNT: carbon nanotube; CNT-FET: carbon nanotube field- effect transistor; ELISA: Enzyme-Linked Immunosorbent Assay; IGF-1: Insulin like growth factor-1;...
Ngày tải lên: 11/08/2014, 00:23
giao trinh linh kien dien tu TRANSISTOR HIỆU ỨNG TRƯỜNG (FIELD EFFECT TRANSISTOR = FET)
... Chương 5: Transistor hiệu ứng trường Hình 5.1 Cấu tạo JFET D D G G JFET N JFET P S S Hình 5.2 Ký hiệu JFET ... hai đặc tuyến JFET RD VCC VDC RS Hình 5.3 5.2.4.1 Đặc tuyến chuyển ID(VGS) VDS=const 66 Chương 5: Transistor hiệu ứng trường Giữ VDS không đổi, thay đổi VGS khảo sát biến thiên ID ID IDSS VP0 VGS ... thoát ID ID VGS = 0V IDSS VGS = -1V VGS = -2V VGS = -3V VGS = -4V VPO VDS (v) Hình 5.5 67 Chương 5: Transistor hiệu ứng trường Khi VGG =0V tức VGS=0V, mối nối P-N G S không phân cực, mối nối P-N G...
Ngày tải lên: 19/09/2013, 17:03
Detection of an uncharged steroid with a silicon nanowire field effect transistor
... immobilization of the Art KSI/mA51 onto the SiNW, these SiNW were pretreated with an UV/ozone plasma (Samco model UV-1) The SiNW were further treated with 3aminopropyltriethoxysilane (APTES, Merck) on adding ... reduction [33], the negatively charged AuNPs are expected to bind to the amine-derivatized surface effectively via an electrostatic interaction [34] After coupling with BS3, the amine-derivatized ... BS3-activated surface The resulting substrate was treated with AuNP If the immobilization of KSI 126C is effective, the deposition of AuNP becomes much increased, presumably through the formation of an...
Ngày tải lên: 16/03/2014, 15:23
laser direct writing of silicon field effect transistor sensors
... APPLIED PHYSICS LETTERS 102, 093504 (2013) Laser direct writing of silicon field effect transistor sensors Woongsik Nam,1,2 James I Mitchell,1,2 Chookiat Tansarawiput,2,3 Minghao ... online March 2013) We demonstrate a single step technique to fabricate silicon wires for field effect transistor sensors Boron-doped silicon wires are fabricated using laser direct writing in combination ... American Institute of Physics [http://dx.doi.org/10.1063/1.4794147] During the past decades, field effect transistor (FET) sensors, in which the surface potential of the conduction channel is modulated...
Ngày tải lên: 06/05/2014, 08:54
Báo cáo hóa học: " Organic nanofibers integrated by transfer technique in field-effect transistor devices" pot
... bottom contact/bottom gate; BC/TG: bottom contact/top gate; FET: field- effect transistor; OLEFETs: organic light-emitting field- effect transistors; TC/BG: top contact/bottom gate 18 Acknowledgements ... Organic Field- Effect Transistors Chem Rev 2007, 107:1296-1323 Gundlach DJ, Zhou L, Nichols JA, Jackson TN, Necliudov PV, Shur MS: An experimental study of contact effects in organic thin film transistors ... in organic field effect transistors Monatsh Chem 2009, 140:735-750 Chua L-L, Zaumseil J, Chang F-J, Ou EC-W, Ho PK-H, Sirringhaus H, Friend RH: General observation of n-type field- effect behaviour...
Ngày tải lên: 21/06/2014, 04:20
BÀI GIẢNG : TRANSISTOR TRƯỜNG ỨNG FET (FIELD EFFECT TRANSISTOR) pot
... ( Field Effect Transistor) -Transistor hiệu ứng trường – Transistor trường • Có loại: - Junction field- effect transistor - viết tắt JFET: Transistor trường điều khiển tiếp xúc P-N (hay gọi transistor ... - Insulated- gate field effect transistor - viết tắt IGFET: Transistor có cực cửa cách điện • Thông thường lớp cách điện dùng lớp oxit nên gọi metal - oxide - semiconductor transistor (viết tắt ... thường gọi tắt transistor trường loại MOS Tên gọi MOS viết tắt từ ba từ tiếng Anh là: Metal - Oxide - Semiconductor • Transistor trường MOS có hai loại: transistor MOSFET có kênh sẵn transistor MOSFET...
Ngày tải lên: 05/07/2014, 12:20
Numerical quantum modeling of field effect transistor with sub 10nm thin film semiconductor layer as active channel physical limits and engineering challenges
... Mobility in Germanium and Strained Silicon Channel Ultra-Thin Body Metal Oxide Semiconductor Field Effect Transistors 3.4.1 Calculated mobility in Si UTB MOSFETs 117 3.4.2 ... Hole Mobility in Germanium and Silicon channel in Ultra-Thin Body Metal Oxide Semiconductor Field Effect Transistors 120 3.5.1 Optimum channel orientation 120 3.5.2 Optimum ... follows after the birth of IC was of course history Engineers began shrinking transistors dimension, resulting in increased transistor density count and operating frequencies For decades, progress...
Ngày tải lên: 13/09/2015, 21:19
Tài liệu Junction Field Effect Transistors doc
... Notes Introduction T he Junction Field Effect Transistor (JFET) exhibits characteristics which often make it more suited to a particular application than the bipolar transistor Some of these applications ... (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page H-4 H-4 01/99 Junction Field Effect Transistors InterFET Application Notes the gate to drain reverse biased depletion region ... Analog and Digital Circuits and Systems, McGraw-Hill Book Company, New York, 1972 Sevin, L.J.: Field Effect Transistors, McGraw Hill Book Co., New York, 1965 Grove, A.S.: Physics and Technology of...
Ngày tải lên: 13/12/2013, 22:15
Chapter 4 characteristics of field effect transistors
... CHAPTER 4: Characteristics Field- Effect Transistor CHAPTER 4: CHARACTERISTICS OF FIELD- EFFECT TRANSISTOR 4.1 INTRODUCTION The operation of the field- effect transistor (FET) can be explained ... flow; the transistor is therefore called unipolar Two kinds of field- effect devices are widely used: the junction fieldeffect transistor (JFET) and the metal-oxide semiconductor field- effect transistor ... CHAPTER 4: Characteristics Field- Effect Transistor 4.4 JFET BIAS LINE AND LOAD LINE Fig 4-3 JFET amplifier bias Val de Loire Program p.62 CHAPTER 4: Characteristics Field- Effect Transistor The commonly...
Ngày tải lên: 18/05/2014, 18:57
Báo cáo hóa học: " High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors" pot
... suppressed in the linear scale values of the drain currents This is due to the negative VSUB, which effectively depletes the carriers in the channel This can also be seen in Fig 5b and c, where no ... level was drastically reduced by the negative substrate bias, as the carriers in the channel are effectively depleted, thus compensating for the fluctuating off-current level Although both approaches ... two-dimensional numerical simulations, which show that the substrate bias causes the channel to be effectively depleted or accumulated Acknowledgements This work was supported by National Research...
Ngày tải lên: 21/06/2014, 08:20
CHAPTER 7: Junction Field-Effect Transistors doc
... drain, gate, and source which are similar to the collector, base, and emitter of a bipolar junction transistor (BJT) • JFETs come in N-channel and P-channel types similar to NPN and PNP for BJTs • ... from device to device (or in the same device as the temperature changes) can have only a small effect on ID Source Biasing Can be done, but not commonly used Input Impedance: Zin • Since the...
Ngày tải lên: 08/08/2014, 16:22
Morphology and charge transport in polymer organic semiconductor field effect transistors
... Organic field- effect transistors (OFETs) The principle of the field- effect transistor (FET) was first proposed by Lilienfeld in 193026 but it was not until the 1980s where organic field- effect transistors ... two most important models of a semicrystalline -stacked OSC with reasonably high field- effect carrier mobility that have been widely studied in both organic field- effect transistor (OFET) and ... H., Tsumura, A & Ando, T Field- effect transistor with polythiophene thin film Synth Met 18, 699-704 (1987) 28 Tsumura, A., Koezuka, H & Ando, T Polythiophene field- effect transistor: Its characteristics...
Ngày tải lên: 10/09/2015, 08:34
Advanced transistors for supply voltage reduction tunneling field effect transistors and high mobility MOSFETS
... field- effect transistor Nitrogen NH4OH Ammonium hydroxide Ni Nickel Ni(GeSn) nTFET Nickel stanogermanide N-channel metal-oxide-semiconductor fieldeffect transistor N-channel tunneling field- effect ... Field- Effect Transistor (TFET) 2.1 Introduction As discussed in Chapter 1, the device physics of tunneling field- effect transistor (TFET) is different from that of metal-oxide-semiconductor field- effect ... feedback field- effect transistor (FB-FET) [8]-[9], mechanical gate field- effect transistor [10]-[12], and tunneling field- effect transistor (TFET) [13]-[67] However, some disadvantages are identified...
Ngày tải lên: 10/09/2015, 09:01
Charge transport in polymer semiconductor field effect transistors
... Chapter Introduction 1.1 Basics of organic field- effect transistors 1.1.1 Organic semiconductors 1.1.2 Field- effect transistors 1.1.3 OFET applications ... hopping nature of transport of field- induced carriers in polymer field- effect transistors has been known for over two decades now, the quantitative description of field effect mobility-carrier density-temperature ... HOMO/LUMO band in ethylene as an example for single crystals.10 1.1.2 Field- effect transistors The first practical field- effect transistor (FET) was invented by Shockley in 1947 and the modern metal-oxide-insulator...
Ngày tải lên: 10/09/2015, 09:05
Tunneling field effect transistors for low power logic design, simulation and technology demonstration
... Metal-oxide-semiconductor field effect transistor Ni Nickel Ni(GeSn) Stanogermanide nMOSFET N-channel metal-oxide-semiconductor field effect transistor nTFET N-channel tunneling field effect transistor pMOSFET ... replace the metal-oxide-semiconductor field effect transistor (MOSFET) for low power applications Among the device candidates, the tunneling field effect transistor (TFET) is the most promising ... transistor pMOSFET P-channel metal-oxide-semiconductor field effect transistor P Phosphorus PR Photoresist pTFET P-channel tunneling field effect transistor TCAD Technology computer-aided design TEM...
Ngày tải lên: 10/09/2015, 09:24
Investigation on performance and reliability improvements of gan based heterostructure field effect transistors
... metal-semiconductor field effect transistor MIS metal-insulator-semiconductor MOCVD metal organic chemical vapor deposition MODFET modulation doped field effect transistor MOSFET metal-oxide-semiconductor field ... the field of wide bandgap compound semiconductor materials and devices [Pearton1999, Jain 2000] 1.2 AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) The heterostructure field effect transistor ... known as the modulation doped field effect transistor (MODFET), two-dimensional electron gas field effect transistor (TEGFET), and selectively doped heterojunction transistor (SDHT) It is also...
Ngày tải lên: 11/09/2015, 10:05
Contact and source drain engineering for advanced III v field effect transistors
... Metal-Oxide-Semiconductor Field- Effect Transistors 2.1 INTRODUCTION In this Chapter, the equivalent of the self-aligned silicide (‘salicide’) in Si technology is explored for III-V metal-oxide-semiconductor field- effect ... shrinking of the transistors that form the basic building blocks of integrated circuits Modern logic circuits rely on n-channel and p-channel metal-oxide-semiconductor field- effect transistors (n-MOSFETs ... metal-oxide-semiconductor field- effect transistors (p-MOSFETs and nMOSFETs, respectively) that form the basis of today’s complementary metal-oxidesemiconductor (CMOS) logic circuits The scaling down of transistors...
Ngày tải lên: 30/09/2015, 05:43
Fabrication and characterization of tunneling field effect transistors (TFETs)
... double-gate tunneling field- effect transistor by silicon film thickness optimization," Applied Physics Letters, vol 90, 2007 K K Bhuwalka, et al., "P-channel tunnel field- effect transistors down to ... -channel nanowire tunnel field- effect transistor by source material optimization," Journal of Applied Physics, vol 104, 2008 15 Chapter Experimental Study of Tunneling Field Effect Transistors This chapter ... attention in recent years are the impact-ionization MOS transistor (I-MOS) and the Tunneling Field Effect Transistor (TFET or tunneling FET) The I-MOS transistor utilizes the phenomenon of impact ionization...
Ngày tải lên: 06/10/2015, 20:36