Fundamentals of materials science and engineering 5th callister (2005)

Ngày tải lên: 28/05/2016, 12:11

... Thus the rate of transfer per unit area is Ni  jg(Cig  CigI)  hL(CiLI  CiL) 1222 VAPOR AND GASEOUS POLLUTANT FUNDAMENTALS - CBB PN OxY XxYx TRS A LB HB EIE-D U DMH-M U DIE-D U CMF-I U CLB U ... 44.6 decomposes — H2SO4 VAPOR AND GASEOUS POLLUTANT FUNDAMENTALS Ammonia 1215 11/18/2005 2:32:41 PM © 2006 by Taylor & Francis Group, LLC 1216 VAPOR AND GASEOUS PO...

Ngày tải lên: 10/08/2014, 20:20

... Fitzgerald -1 9 99 14 Extracting Typical τ for Metals • τ ~1 0 -1 4 sec for metals in Drude model 3.225 © E.A Fitzgerald -1 9 99 15 Thermal Velocity • So far we have discussed drift velocity vD and scattering ... independent of magnitude of L and W Useful for working with films of thickness, t R R R 3.225 © H.L Tuller-20 01 17 How to Make Resistance Measurements Rc2 I Rc1 Rs V...

Ngày tải lên: 11/08/2014, 14:20

... For Si, Eg=1.1eV, and let µe and µh be approximately equal at 1000cm2/V-sec (very good Si!) σ~1010cm-3*1.602x1 0-1 9*1000cm2/V-sec=1.6x1 0-6 S/m, or a resistivity ρ of about 106 ohm-m max • • One important ... atoms per cm-3 – n~10 15, p~1020/10 15~ 1 05 σ/σi~(p+n)/2ni~n/2ni~1 05! Impurities at the ppm level drastically change the conductivity ( 5- 6 orders of magnitude) 3.2 25...

Ngày tải lên: 11/08/2014, 14:20

... conductivity: σ = 4.4 10 -1 8 S cm-1 T [°C] 900 -4 800 700 600 500 10 Y-cut -5 -1 σ [S cm ] 10 -1 σ0 = 2.1 S cm EA = 105 kJ mol -6 10 -1 -7 10 3.225 10 11 10 /T [1/K] 12 13 © H.L Tuller-2001 26 13  ... Substrate: Si wafer 20 40 60 80 110 100 90 80 70 60 50 40 30 20 10 -1 0 110 100 90 80 70 60 50 40 30 20 10 -1 0 20 MFC2 Feuchte Temp CO 40 NO2...

Ngày tải lên: 11/08/2014, 14:20

... Tuller-2001 Influence of Dopants on Electrical Conductivity of SrTiO3 log(σ / (Ωcm )-1 ) λ 0 .99 5 1,005 T = 800 °C no -1 ac -2 ce pto -3 rd op rd op ed ed -4 Sr2+ Ti4+ O 2-3 -5 acceptor donor -2 0 -1 6 ... Versatility High Strain (Pb0 .98 La0.02(Zr0.7Hf0.3)1-xTixO3 AFE­ FE System (C Heremans and H.L Tuller, J Euro Ceram Soc., 19, 11 39 ( 199 9).) Atmosphere de...

Ngày tải lên: 11/08/2014, 14:20

... are discrete 3. 225 © E Fitzgerald-1999 24 12 Representation of E,k for 1-D Material E= states electrons h 2k p = 2m 2m E EF All e- in box accounted for m=+1/2 ,-1 /2 En+1 En En-1 Quasi-continuous ... k y ) E(kx,ky) 2m ky kx 3. 225 © E Fitzgerald-1999 Representation of E,k for 3- D Material kz Ε(kx,ky,kz) ky kF E= m π2 2mE h3 Fermi Surface or Fermi Sphere k F = (3 n )3 vF = 2m kx 2π...

Ngày tải lên: 11/08/2014, 14:20

... when you join these together? 3.225 © E Fitzgerald-1999 11 Drift and Diffusion - - - - - + + + + + + + + Holes diffuse Electrons diffuse - - - - - - + + + + E + + + + An electric field forms due ... force of diffusion until EF is flat - - + + + + Holes diffuse Electrons diffuse 3.225 © E Fitzgerald-1999 13 Space Charge, Electric Field and Potentia...

Ngày tải lên: 11/08/2014, 14:20

... of positive and negative ions 3.225 © E Fitzgerald-1999 © H.L Tuller, 2001 Ferroelectrics Applications • Capacitors • Non-volatile memories • Photorefractive materials 3.225 Characteristics of ... τ=9.5x1 0-1 1 sec, ω~1010 microwave oven, transmission of E-M waves 3.225 © E Fitzgerald-1999 19 Dielectric Constant vs Frequency • Completely general ε due to the localized charge in m...

Ngày tải lên: 11/08/2014, 14:20

... =0,1,2,…,n-1 ml =- l, - l+1,…,0,…, l , -1 (ms=+ or - 1/2) U(r) -1 3.6eV 3.225 © E Fitzgerald-1999 16 Relationship between Quantum Numbers s s p s p d Origin of the periodic table © E Fitzgerald-1999 ... © E Fitzgerald-1999 © H.L Tuller-2001 Energy Gap and Mobility Trends Material Eg(eV)°K µn(cm2/V·s) GaN 3.39 150 AlAs 2.3 180 GaP 2 .4 2,100 GaAs 1.53 16,000 InP 1 .41 44...

Ngày tải lên: 11/08/2014, 14:20

... magnetic material Material Type χ Paramagnetic +1 0-5 -1 0-4 Diamagnetic -1 0-8 -1 0-5 Ferromagnetic +105 3.225 © E Fitzgerald-1999 Microscopic Source of Magnetization • No monopoles • magnetic dipole ... E~-S1S2 > Energy if Fe, Ni, Co -> J positive! Other elements J is negative Rule of Thumb: interatomic distance r ≡ > 2ra 2(atomic radius) J is a function of distance! 3...

Ngày tải lên: 11/08/2014, 14:20

... Representation of Waves sin(kx-ωt), cos(kx-ωt), and e-i(kx-ωt) are all waves e -i(kx-ωt) is the complex one and is the most general imaginary A θ Acosθ iAsinθ real e iθ=cosθ+isinθ 3 .22 5 © E.A Fitzgerald-1999 ... metals • Valence =2 and 3, magnitude and sign suggest problems 3 .22 5 © E.A Fitzgerald-1999 25 13 Response of Free e- to AC Electric Fields • Microscopic picture EZ =...

Ngày tải lên: 11/08/2014, 14:20

... 2.25 5.9 Electronic and ionic polarisation H2O 1 .77 80.4 Electronic, ionic, and molecular polarisation Polarization that is active depends on material and frequency 3.225 © E Fitzgerald-1999 Microscopic ... 3.225 © E Fitzgerald-1999 15 Ionic Polarizability Eloc •2 coupled differential eqn’s •1 for + ions •1 for - ions - + - + M= p u- u+ Ionic materials always have ioni...

Ngày tải lên: 11/08/2014, 14:20

... Faculty of Computer Science and Engineering Department of Computer Science Return element of s is appended into q with the same order For example if q = {1,2 ,3} , s = {4,5,6} then q = {1,2 ,3, 4,5,6} ... reverse(Q) while(Q->front!=NULL) dequeue(q,temp) 3/ 4 enqueue(Q,temp) return Q End append Faculty of Computer Science and Engineering Department of Comput...

Ngày tải lên: 13/02/2014, 13:20

... Faculty of Computer Science and Engineering Department of Computer Science Question Suggest a data structure that supports the following operation and given time complexities: ... class Node { E data; Node left, right; } Node root; } 2/3 Faculty of Computer Science and Engineering Department of Computer Science Write a recursive method called isCompleteBi...

Ngày tải lên: 13/02/2014, 13:20