Integration of silicon nanowires in MOS technology

Carbon assisted synthesis of silicon nanowires

Carbon assisted synthesis of silicon nanowires

... The XRD pattern of the product, given in Fig 2b, is characteristic of cubic silicon with a small impurity of silica Reaction of silicon powder with activated carbon in the absence of H2 , by procedure ... planes of silicon The crystallinity of the nanowires is considerably higher when only argon was used instead of a mixture of argon and hydrogen The role of hydr...
Ngày tải lên : 16/03/2014, 15:04
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Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... the growth of the Si nanowires, as does Au, without loss of components by chemical reaction or evaporation Thus, it has been demonstrated that Pt is a stable catalyst for the VLS mechanism The growth ... dependent on the type of catalyst This could be explained by the effect of the catalyst on the barrier energy to the nucleation of a new step at the growth front of t...
Ngày tải lên : 16/03/2014, 15:05
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Optical spectroscopy of silicon nanowires

Optical spectroscopy of silicon nanowires

... shows the Raman scattering spectra of the SiNWs and crystal silicon A very sharp and Fig A typical SEM image of the morphology of aligned silicon nanowires of uniform diameter distribution on ... linewidth of crystalline silicon, and D is the size of crystal Eq (1) was used to fit the Raman spectra The continuous line in Fig shows the best-fit result, and the average crystal...
Ngày tải lên : 16/03/2014, 15:06
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Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

... the temperature dependence of the morphology of SiNWs synthesized by laser ablation In this Letter, we present the results on this project Our results show that the morphology and diameter of ... B, the temperature dependence of the morphology and diameter of the SiNWs is similar to that by thermal evaporation, reported recently by Peng et al [14] I...
Ngày tải lên : 16/03/2014, 15:09
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Temperature dependence of the quality of silicon nanowires produced over a titania supported gold catalyt

Temperature dependence of the quality of silicon nanowires produced over a titania supported gold catalyt

... both, the bare catalyst and the product may generate Raman bands, the spectra of a reference silicon wafer and that of the fresh catalyst are included in the figure The spectrum for the fresh catalyst ... quantitative comparison of the density of SiNW left on the catalyst surface after reaction at different temperatures, the Fig SEM micrograph of silicon nan...
Ngày tải lên : 16/03/2014, 15:09
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A study in the growth mechanism of silicon nanowires with or without metal catalyst

A study in the growth mechanism of silicon nanowires with or without metal catalyst

... Metal- assisted growth of SiNWs A basic aspect of the VLS mechanism is the metal particle acting as a catalyst for the anisotropic growth of SiNW with a crystalline structure A catalyst particle ... substrate (Fig 2B a) , a liquid metal Si alloy will be formed With more and more Si atoms added, the Si content in the If the growth with a...
Ngày tải lên : 16/03/2014, 15:09
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Infrared spectra of silicon nanowires

Infrared spectra of silicon nanowires

... of ∼ 1085 cm− The improvement of crystalline quality can also be indicated from the change of silicon lattice absorption peaks Compared with the IR spectra of sample-I, the absorption bands of ... explained from the analysis of oxide layer on SiNWs grown under different conditions The crystalline quality of sample-II is better than that of sample-I because of the improve...
Ngày tải lên : 16/03/2014, 15:11
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Synthesis and characterization of silicon nanowires using tin catalyst for solar cells application

Synthesis and characterization of silicon nanowires using tin catalyst for solar cells application

... characteristics of the fabricated SiNWs solar cell under dark and light conditions the thickness of Si base substrate more thinly For improvement of conversion efficiency of the SiNWs solar cells, the ... performance Therefore, further reduction of the reflectance will be expected from the optimization of the synthesis conditions of SiNWs For analysis of the electri...
Ngày tải lên : 16/03/2014, 15:12
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Synthesis of silicon nanowires after hydrogen radical treatment

Synthesis of silicon nanowires after hydrogen radical treatment

... XRD pattern of the metal oxide film (a) before and (b) after hydrogen radical treatment The FE-SEM image after hydrogen radical treatment is shown in Fig 1(c) The typical XRD peaks of the asdeposited ... peaks after hydrogen radical treatment for at 400 °C (c) FE-SEM image of the as-fabricated indium nanocrystals as metal catalysts after hydrogen radical tr...
Ngày tải lên : 16/03/2014, 15:13
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Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

... orientation of the evolving Si-NWs In this study, we investigate the morphological evolution of Si-NWs on Si substrates grown by nanoscale Au–Si island- catalyzed rapid thermal chemical vapor deposition ... morphological and dimensional evolution of the Si-NWs on Si (0 1) and (1 1) surfaces grown 157 by using Au–Si nanoisland -catalyzed RTCVD For a given growth c...
Ngày tải lên : 16/03/2014, 15:15
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Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

... possibility of having grown silica or silicon nitride instead of pure silicon nanowires However, the nanowires and the photostructurable glass were expected to contain mainly silicon and oxygen ... such that the growth of silicon nanowires is favoured However, the initialization of the nanowire growth requires additional investigations The chemical composition of...
Ngày tải lên : 16/03/2014, 15:17
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Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

... insertion of the sample into the UHV chamber in spite of the preceding HF-dip There are hints in the literature [11 ] that deposition of gold onto a thin layer of SiO2 on Si (1 1) favors the decomposition ... melting point (15 7 1C) [13 ] As the surface tension of most liquids decreases in a nearly linear fashion with increasing temperature [14 ], there is...
Ngày tải lên : 16/03/2014, 15:17
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Investigation of capacitive humidity sensing behavior of silicon nanowires

Investigation of capacitive humidity sensing behavior of silicon nanowires

... 600–604 Fig Equivalent capacitance model of silicon nanowires sensor Fig Schematic diagram of testing platform of humidity characteristic for silicon nanowires sensor 12000 Sample Sample Sample ... seen when the relative humidity comes back to the same value So the silicon nanowires humidity sensors can work repeatedly 3.3 Stability In this study, the silicon nanowi...
Ngày tải lên : 16/03/2014, 15:18
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Optical and electrical studies of silicon nanowires in photovoltaic applications

Optical and electrical studies of silicon nanowires in photovoltaic applications

... development and prominent properties are presented briefly in Chapter 1.2 Integration of silicon nanowires into PV devices There has been increasing research interests in deploying nanostructures, silicon ... highlighting the advantages and promising prospect of SiNWs in the design and fabrication of third generation solar cells In previous works, SiNWs were fabricat...
Ngày tải lên : 12/10/2015, 17:35
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Integration of silicon nanowires in MOS technology

Integration of silicon nanowires in MOS technology

... theoretical study of the effect of interface states on nanowires Integration of Silicon nanowires MOS technology II Julien POIZAT 2004 Death of CMOS Technology: II.1 Miniaturization: Progress of micro-electronics, ... is the SOI technology (Silicon On Insulator) It is compatible to CMOS technology It consists of building a transistor over a thin Silicon layer 1...
Ngày tải lên : 08/11/2015, 16:30
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