Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology
Báo cáo hóa học: " Editorial Signal Processing with High Complexity: Prototyping and Industrial Design" docx
... on Signal Processing, EURASIP Journal of Applied Signal Processing, EURASIP Journal on Embedded Systems and is elected AdCom Member of EURASIP He authored and co-authored more than 200 papers and ... the IEEE Signal Processing Society e-letter His research interest focuses on applied signal processing with emphasis on multi-antenna systems, especially its applicability t...
Ngày tải lên: 22/06/2014, 22:20
báo cáo khoa học: " Drug Checking: A prevention measure for a heterogeneous group with high consumption frequency and polydrug use - evaluation of zurich’s drug checking services" potx
... and/ or amphetamines (74.8%) at least once in their life As shown in Figure 1, the initiation age for legal substances (alcohol and tobacco) was approximately 15 and the age for cannabis was approximately ... was responsible for the data analyses and prepared the first draft of the paper and the final manuscript AB assisted with the interpretation of the data, provided th...
Ngày tải lên: 11/08/2014, 18:20
High k dielectrics in metal insulator metal (MIM) capacitors for RF applications
... MIM capacitors This section briefly reviews some of the dominant works on the high- k dielectrics in the MIM capacitors for RF applications The insulators used in these works can be classified into ... loss Metal Metal -Insulator -Metal capacitor Fig 1-2: Development of capacitors for silicon integrated circuit from poly-insulatorsilicon structure [4] to poly -insul...
Ngày tải lên: 10/09/2015, 08:31
Application of high k dielectric to non volatile memory devices
... Flash Memory Devices 1.2 Flash Memory Devices Among various non- volatile memory devices, floating gate (FG) type flash memory devices are the core of every modern non- volatile semiconductor memory ... newer applications Thanks to the characteristics of non- volatile memory, it offers a wide range of applications from industrial computers to consumer hand...
Ngày tải lên: 11/09/2015, 09:16
Study on advanced gate stack using high k dielectric and metal electrode
... mask effect on gate stacks of metal electrode / high- K dielectric should be investigated and understood for successful implementation of hard mask in the gate stack 1.3.4 Challenges of Metal Electrode ... replace current SiO2 dielectric and poly-Si electrode for continuous success of CMOS technology The study on the formation of advanced gate stacks usin...
Ngày tải lên: 12/09/2015, 08:16
Hafnium oxide based high k dielectric gate stack
... thicker layer of oxides of higher dielectric constant (k) Intensive research is underway to develop oxides into new high quality electronic materials 1.4 Alternative high- k gate dielectrics candidates ... process from gate dielectric to Si channel While SiO2 provides us with the remarkable properties as the gate dielectric, the gate leakage current increases exponentially a...
Ngày tải lên: 13/09/2015, 20:42
Development and characterization of high k dielectric germanium gate stack
... the high- k material in consideration EOT is given by tox thigh k kSiO2 / khigh k , where thigh k and khigh k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Di...
Ngày tải lên: 14/09/2015, 08:25
Germanium MOSFETs with high k gate dielectric and advanced source drain structure
... Shang, K. -L Lee, P Kozlowski, C D Emic, I Babich, E Sikorski, M Ieong, H.-S P Wong, K Guarini, and W Haensch, “Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and ... Microprobe with a monochromatic and standard Al X-ray source 27 Chapter 2: Germanium MOS Device with High- κ Gate Dielectric 2.3 Results and discussion 2.3.1...
Ngày tải lên: 14/09/2015, 11:29
Schottky source drain transistor integrated with high k and metal gate for sub tenth nm technology
... SCHOTTKY SOURCE/ DRAIN TRANSISTOR INTEGRATED WITH HIGH- K AND METAL GATE FOR SUB- TENTH NM TECHNOLOGY LI RUI (B Sc., Univ of Science and Technology of China, CHINA) A THESIS SUBMITTED FOR THE ... integration of germanide Schottky source/ drain Ge channel MOSFET with high- k gate dielectric and metal gate for sub- tenth nm technology...
Ngày tải lên: 14/09/2015, 14:04
Gate stack engineering of germanium mosfets with high k dielectrics
... gate oxide thickness (tox) * tox=thigh -k* kSiO2/khigh -k, where thigh -k and khigh -k are the physical thickness and the effective relative permittivity of the high- k dielectric, Chapter 1: Introduction ... Copel, M.A Gribelyuk, H Okorn-Schmidt, C D’Emic, P Kozlowski, K Chan, N Bojarczuk, L.-A Ragnarsson, P Ronsheim, K Rim, R.J Fleming, A Mocuta, A Ajmera, “Ultrathin high- k...
Ngày tải lên: 15/09/2015, 17:09
Metal gate with high k dielectric in si CMOS processing
... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...
Ngày tải lên: 16/09/2015, 08:31
Characterization and numerical simulation of gallium nitride based metal oxide semiconductor high electron mobility transistor with high k gate stack
... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...
Ngày tải lên: 03/10/2015, 20:31
Interface study of high k oxide and ge for the future ge based MOSFET device
... (1) Ge on top of the high- k dielectrics material, which constitutes the structure called Germanium-on-insulator (GeOI); (2) high- k material on top of the Ge, which forms the stack of high- k gate ... first-principles study of interface of high- k material (STO) with Ge, and experimental study of crystal growth of Ge on high- k material (STO...
Ngày tải lên: 12/10/2015, 17:33
Characterization and numerical simulation of gallium nitride based metal oxide semiconductor high electron mobility transistor with high k gate stack
... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...
Ngày tải lên: 12/10/2015, 17:36
Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology
... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...
Ngày tải lên: 16/10/2015, 15:37