Growth of germanium nanowires for thermoelectric applications
Growth of germanium nanowires for thermoelectric applications
... GROWTH OF GERMANIUM NANOWIRES FOR THERMOELECTRIC APPLICATIONS YOUCEF BANOUNI (Eng Deg., INSTITUT NATIONAL DES TÉLÉCOMMUNICATIONS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING ... in the thermoelectric performance of a device Although silicon is known as a poor thermoelectric material, it was shown that silicon in the form of nanowires exhibits ther...
Semiconductor nanowires for thermoelectric applications
... 22 2.3 Semiconductor nanowire for thermoelectric applications .23 2.3.1 Fabrication Methods 24 iii 2.3.2 Development of silicon/silicon-germanium/germanium nanowire for thermoelectrics ... improving the and value ratio [2.21] 2.3 Semiconductor nanowire for thermoelectric applications The thermal properties of crystal are an important area for study, with the first work pio...
Fabrication and characterization of semiconductor nanowires for thermoelectric application 5 6
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Fabrication and characterization of semiconductor nanowires for thermoelectric application 3
... 3/ (#CpD), $ = L2/(%2&) and & = k/(#Cp) Equation (3. 3) should be satisfied for the thermal conductivity calculated to be within +/ -3. 5% of the actual value < 2'$ < (3. 3) The parameters of the lock-in ... working frequency for the Ge nanowire sample was 1000 Hz, 0. 03 s of time constant was sufficient for stability 3. 11 Ceramic heater setup for temperature dependence c...
Fabrication and characterization of semiconductor nanowires for thermoelectric application 4
... roughness of the nanowires and act as a form of phonon-scattering elements at several length scales If precipitates are incorporated carefully, the k of Ge Thermal Conductivity of GeNw and SiNw 77 nanowires ... resistivity of the GeNw were measured and extracted accordingly as below Electrode to 2, to and to : 0. 349 ! m Electrode to and to : 0 .41 3 ! m Electrode to :...
Fabrication and characterization of semiconductor nanowires for thermoelectric application 1 2
... of germanium nanowires 11 " 2. 3 .1" Growth mechanism of germanium nanowires 11 " iv 2. 3 .2 Different nanowire synthesis techniques 18 " 2. 4 Fabrication of silicon nanowires by ... Introduction and Motivation 1" 1. 1" Background 1" 1. 2" Efficiency of a thermoelectric material 3" 1. 3" Opportunity in semiconductor nanowires 4" 1. 4" Organization of ....
Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)
... insertion of the sample into the UHV chamber in spite of the preceding HF-dip There are hints in the literature [11 ] that deposition of gold onto a thin layer of SiO2 on Si (1 1) favors the decomposition ... melting point (15 7 1C) [13 ] As the surface tension of most liquids decreases in a nearly linear fashion with increasing temperature [14 ], there is...
Investigation and integration of piezoresistive silicon nanowires for MEMS applications
... can categorize the efforts as basic investigation of the SiNWs for its unique properties and integration of SiNWs with Micro-Electro-Mechanical-Systems (MEMS) for various applications In this ... the practical value of SiNWs and their integration with MEMS for applications In this chapter on literature review, the focus is the piezoresistive effect of SiNWs an...
Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1 55 micron region
... GaN/AlGaN/AlN/Si (11 1) template 15 Fig 1- 10: Amorphous SiNx formed during an attempt to grow InN directly on Si (11 1) with preflow of TMI 17 Fig 1- 11: Melting points of Group III nitrides and ... [24] 15 Fig 1- 9: (left) In droplets formed together with InN (when the growth temperature is too low, appearing as the In (10 1) peak in XRD ω-2θ rocking curve scans (ri...
A capillary-based method determining the permeability of sand layer for geothermal applications
... role in the modelling of the heat transfer of BHEs in an aquifer for geothermal applications This paper presented a novel laboratory method determining the hydraulic permeability of sand layer using ... that, except for sand samples, the present method can also be applied for other porous materials with the grain diameter of 0.1-0.6 mm For porous...
Tài liệu Real-Time Digital Signal Processing - Appendix C: Introduction of C Programming for DSP Applications ppt
... 470 APPENDIX C: INTRODUCTION OF C PROGRAMMING FOR DSP APPLICATIONS C program (Source) Preprocessor Compiler Assembly code Assembler Object code Linker (loader) Libraries Execution Data ... ba is assigned to c 476 APPENDIX C: INTRODUCTION OF C PROGRAMMING FOR DSP APPLICATIONS The modulus operator is useful in implementing a circular pointer for si...
On the Control Aspects of Semiactive Suspensions for Automobile Applications doc
... Semiactive Configuration The states of the model are: • The deflection of the suspension ( x ) • The velocity of the sprung mass ( x ) • The deflection of the tire ( x ) • The velocity of the unsprung ... suspensions) and the damping ratio of the sprung mass ζ S for the passive configuration For the semiactive suspensions, ζ S is replaced by...
Growth of silicon nanowires on UV structurable glass using self organized nucleation centres
... possibility of having grown silica or silicon nitride instead of pure silicon nanowires However, the nanowires and the photostructurable glass were expected to contain mainly silicon and oxygen ... such that the growth of silicon nanowires is favoured However, the initialization of the nanowire growth requires additional investigations The chemical composition of...
Synthesis and characterization of semiconducting nanowires for gas sensing
... the electrical and gas sensing behavior of ZnO nanowires Fig Characteristics of In3 O2 nanowires: (a) SEM image of In3 O2 nanowires, (b) TEM image of nanowire 70 nm in width, and (c) ED pattern ... image of a nanowire, and (e) linescan of the HAADF signal (solid line) and numerical fit of the shape of the nanowire (dashed line) As both composition and phase ca...
Diffusion controlled growth of semiconductor nanowires vapor pressure versus high vacuum deposition
... concentration of alloy As shown in Ref [24], if U is much higher than the alloy supersaturation f, the wire growth is mainly controlled by the transport of semiconductor particles to the drop Our growth ... length of GaAs nanowires grown by MBE on the GaAs(1 1)B surface activated by Au drops within the temperature range of 460–600 °C It is seen that the average growth rate...
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