Fabrication and characterization of planar hall devices

... developing process, evaporation, lift off, sputtering and wire bonding process 3.1 Fabrication of Planar Hall Devices by Using Shadow Mask 3.1.1 Layout of Masks In the fabrication process using conventional ... magnetoresistance (AMR), giant magnetoresistance (GMR) and the Planar Hall Effect (PHE) are introduced The role of interlayer exchange coupling and advantages...

Ngày tải lên: 05/10/2015, 22:32

... structure for memory application Results of the present study may enhance our understanding of the application of organic and polymer materials to the organic memory device and it may also contribute ... observed from a lot of organic/ polymer materials based device since 1960s, none of the devices based on these materials can fulfill all the requireme...

Ngày tải lên: 12/09/2015, 11:29

... 2006 Acquisition and analysis of Langmuir probe characterization for ECR plasma Indian J Phys 80: 1011–1015 Jain S K, Jain A, Hannurkar P R, Kotaiah S 2007 Characterization of plasma parameter, ... distance for (a) mirror magnetic field, and (b) flat magnetic field the magnetic field can cause diffusion of the plasma particles to the wall of the plasma ch...

Ngày tải lên: 22/12/2013, 08:58

... on working electrodes made of highly ordered anodic titanium oxide nanotube arrays of varied tube length directly formed on Ti foil The lengths of these ATO NT were controlled from to 41 µm while ... Because of the robust structure of the NT arrays and the loose structure of the surface debris, the unwanted deposits on the ATO surface Anodic TiO2 Nanotube Arra...

Ngày tải lên: 19/03/2014, 16:48

... processing of large-scale graphene Nat Nanotech 2009, 4:25-29 doi:10.1186/1556-276X-7-53 Cite this article as: Kim et al.: Fabrication and characterization of carbon-based counter electrodes prepared by ... graphene, SWNTs, and graphene-SWNT composites could perform sufficiently well as counter electrodes for DSSCs Figure Nyquist plot of DSSCs Nyquist plot of D...

Ngày tải lên: 20/06/2014, 23:20

... processing of large-scale graphene Nat Nanotech 2009, 4:25-29 doi:10.1186/1556-276X-7-53 Cite this article as: Kim et al.: Fabrication and characterization of carbon-based counter electrodes prepared by ... graphene, SWNTs, and graphene-SWNT composites could perform sufficiently well as counter electrodes for DSSCs Figure Nyquist plot of DSSCs Nyquist plot of D...

Ngày tải lên: 21/06/2014, 17:20

... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and ... process, and the exposed silicon substrate is etched away to form the nanotip The field emission property of the ultra-sharp nanotip is measured, and the turn-on f...

Ngày tải lên: 21/06/2014, 17:20

... integration into heterojunction silicon wafer solar cells and subsequently the modelling of heterojunction and hybrid heterojunction silicon wafer solar cells that utilize these films Three key ... monocrystalline/multicrystalline solar cells, thin- film solar cells, organic solar cells, tandem cells, concentrator cells and varying choice of mat...

Ngày tải lên: 09/09/2015, 11:15

... energy bandgap, and high electron mobility High electron mobility transistors (HEMTs) employing the AlGaN/GaN heterostructure further exploit the high electron mobility in the two-dimensional electron ... Abstract Fabrication and Characterization of Advanced AlGaN/GaN High- Electron- Mobility Transistors by LIU Xinke Doctor of Philosophy − Electrical...

Ngày tải lên: 10/09/2015, 09:11

... FABRICATION AND CHARACTERIZATION OF GERMANIUM PHOTODETECTORS WANG JIAN B Sci (Peking University, P R China) 2006 A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL ... due to its ease of process Due to the bandwidth-efficiency tradeoff, typical NI incidence Ge photodetectors offer moderate quantum efficiencies and bandwidths Among the re...

Ngày tải lên: 10/09/2015, 15:47

... Comparison of separation performance for hollow fiber membranes between the O2/N2 mixed gas and pure gas measurements……… … 245 Table B.3 Comparison of separation performance for hollow fiber membranes ... FABRICATION AND CHARACTERIZATION OF COMPOSITE MEMBRANES FOR GAS SEPARATION JIANG LANYING (B Sci., Wuhan University, P R China) A THESIS SUBMITTED FOR...

Ngày tải lên: 12/09/2015, 11:24

... roughness of the SiOx films as a function of the flow ratio R 88 Fig 4.7 IR spectra of the as-deposited SiOx films at different flow ratios of R 90 Fig 4.8 IR spectra of the SiOx films ... Introduction and Literature Survey NC films The annealing and oxidation effects on the structures and properties of Si NCs were studied Chapter 4: Thermal Annealing and Oxidation...

Ngày tải lên: 12/09/2015, 11:25

... FABRICATION AND CHARACTERIZATION OF NANOSTRUCTURED HALF METALS AND DILUTED MAGNETIC SEMICONDUCTORS LI HONGLIANG (M Eng., Tongji University, P R China) A THESIS SUBMITTED FOR THE DEGREE OF ... focused on the fabrication and characterization of two kinds of spintronic materials: Fe3O4 and Ge1-xMnx The former is a kind of half metal, while the latter is a...

Ngày tải lên: 12/09/2015, 11:29

... curves of PBI membranes at pressure of 15 bar124 xiv Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes WANG KAI YU Figure 4.10 The salt rejection by PBI nanofiltration ... Membranes and their Application in the Separation of Pharmaceuticals 75 3.1 Introduction 75 iii Fabrication and Characterization of Ultrafiltration...

Ngày tải lên: 12/09/2015, 11:29

... fundamentals of the GaN related materials and the theory of the AlGaN /GaN HEMT are described The experimental procedures for the fabrication of ohmic contact, Schottky contact and AlGaN /GaN HEMTs are ... majority of this semiconductor stems from its ability to form alloys with GaN producing AlGaN and allowing the fabrication of AlGaN /GaN based electronic and...

Ngày tải lên: 05/10/2015, 22:32