Reliability modeling of ultra thin gate oxide and high k dielectrics for nano scale CMOS devices

... that of the direct tunneling leakage current of 13 - 20 Å at its initial unstressed state higher than that of post-QB leakage in thicker oxides Due to this high gate leakage for ultra- thin oxides, ... Device Scaling and Dielectric Performance 23 2.5 Ultra- thin oxide Reliability 24 2.6 High- K Dielectrics Reliability 27 2.6.1 High- K charge trapping 28 2.6.2...

Ngày tải lên: 16/09/2015, 17:12

... ADVANCED GATE STACKS FOR NANO- SCALE CMOS TECHNOLOGY WANG XIN PENG (M Eng., Tsinghua University; B Eng., Tsinghua University) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... Developments in Advanced Gate Stacks Involving High-k Dielectrics and Metal Gates Chapter Developments in Advanced Gate Stacks Involving High-k Dielectrics and Metal Gates 2.1 High-k Gate Di...

Ngày tải lên: 15/09/2015, 21:16

... perspective of the nano-scale multi- gate transistor devices based on extensive process and device simulation study Impact of fringing field, the dimension and material of spacer and the gate dielectric ... at the terminals of the test key for measuring the I-V characteristics of the N and P drivers and the DUT, and, the C-V measurement of N and P-type SNW DUTs...

Ngày tải lên: 12/09/2015, 11:29

... transparent and hydrophobic polymer We investigated the effect of thermal annealing on the secondary crystallization as a function of film thickness The effect of film thickness on the surface chemical ... properties of ultra- thin polymer films that are widely used in the industries today In this work, we investigated the thickness dependenc...

Ngày tải lên: 05/10/2015, 19:04

... to initiate resonant transport thus defines the conductance gap of the device The conductance gap changes with the difference of the adsorbates The adsorbates control the conductance gap as the ... semiconductor Applying a gate voltage leads to an increase/decrease in conductance The binding of molecules to a nanowire is analogous to applying a voltage using a gat...

Ngày tải lên: 16/03/2014, 15:32

... assumed that a range of a has a linear variation between 15 and 115, with a c value of 0.3 at a a = 15 and a value of 0.2 at a = 15 After modifying a, the surface tension is a constant and ... details Department of Mechanical and Electro-Mechanical Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung, Taiwan 804 2Ma...

Ngày tải lên: 21/06/2014, 03:20

... sulfosuccinate (AOT) as co-templates and tetraethoxysilane (TEOS) as silica source and then annealed in air For obtaining the ultrafine magnetic hollow silica NPs, we added hollow magnetite NPs (ca 100 ... synthesis of a particle size of less than 30 nm for hollow silica materials Herein, we present an advance in a simple and scalable wet chemical and subsequent...

Ngày tải lên: 22/06/2014, 00:20

... biofilms on the respiratory mucosa of humans and other mammals and it has been hypothesized that this contributes to the chronicity of these infections [1,2] They are the most frequently detected ... appear only once in the entire global population The model requires four parameters: the number of core genes, the number of contingency genes, the probability of...

Ngày tải lên: 14/08/2014, 07:21

... sequence contained exactly one functional binding site for each of the six transcription factors: Pax6, TP53, IRF2, PPARG, ROAZ, and YY1E2F YY1E2F is a composite TFBS consisting of YY1 and E2F binding ... expected Poisson rates of replacement turnover events for TFBS (E2F) and TFBS (Myc) Similarly, the probability of a replacement turnover of one and only one of...

Ngày tải lên: 14/08/2014, 08:20

... MODELING OF OPENCAST MINES USING SURPAC AND ITS OPTIMIZATION THESIS IS SUBMITTED IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF BACHELOR OF TECHNOLOGY IN MINING ... entitled Modeling of opencast mines using Surpac and its optimization submitted by Mr Harshit Agrawal (Roll No-108MN048) in partial fulfillment of the requirements for the aw...

Ngày tải lên: 04/11/2014, 09:21

... reference to Coordination chemistry of pyrazolone based schiff bases relevant to uranyl 663 Table 4b1 Various bond length of compound (5) S No Atoms Actual bond length Optimal bond length S No Atoms ... satisfactory analytical data and all the studies presented above suggest that the complexes are of the compositions, Coordination chemistry of pyrazolone b...

Ngày tải lên: 02/09/2015, 13:48

... TRIBOLOGICAL STUDIES OF ULTRA- THIN FILMS AT HEAD/ MEDIA INTERFACE FOR MAGNETIC DATA STORAGE SYSTEMS EHSAN RISMANI-YAZDI (B E, Isfahan University of Technology, Isfahan, ... common devices for mass storage of information Hard drives are magnetic storage devices in which data is recorded as magnetized bits on the surface of a thin layer of ferrom...

Ngày tải lên: 09/09/2015, 10:17

... four kinds of wave modelings to study a prototype wave system, i.e., analytical modeling, empirical modeling, physical modeling and numerical modeling With their inherent advantages and disadvantages, ... technology, numerical modeling becomes more and more popular and important to study water waves A numerical wave model is the combination of mathematical re...

Ngày tải lên: 13/09/2015, 20:56

... is devoted to the study of thermal stability of thin and ultra- thin diffusion barrier in Cu/Low-k interconnect system The investigation is conducted on different Ta based barrier (single and bilayer) ... shortings The use of a diffusion barrier in the metal lines is imperative for the successful implementation of copper into the system Advanci...

Ngày tải lên: 14/09/2015, 08:25

... THERMODYNAMIC PROPERTIES OF CERIA THIN FILM 145 of the thermodynamic quantities have not been studied in detail Temperature and pressure dependences of the thermodynamic and elastic properties ... consider a ceria free thin film of n layers with the film thickness d Suppose two top and bottom layers (surface layers) of ceria thin film are la...

Ngày tải lên: 31/10/2015, 10:44