Metal gate with high k dielectric in si CMOS processing

... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...

Ngày tải lên: 16/09/2015, 08:31

... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...

Ngày tải lên: 16/10/2015, 15:37

... mask effect on gate stacks of metal electrode / high- K dielectric should be investigated and understood for successful implementation of hard mask in the gate stack 1.3.4 Challenges of Metal Electrode ... replace current SiO2 dielectric and poly-Si electrode for continuous success of CMOS technology The study on the formation of advanced gate stacks usin...

Ngày tải lên: 12/09/2015, 08:16

... Shang, K. -L Lee, P Kozlowski, C D Emic, I Babich, E Sikorski, M Ieong, H.-S P Wong, K Guarini, and W Haensch, “Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and ... Microprobe with a monochromatic and standard Al X-ray source 27 Chapter 2: Germanium MOS Device with High- κ Gate Dielectric 2.3 Results and discussion 2.3.1...

Ngày tải lên: 14/09/2015, 11:29

... SCHOTTKY SOURCE/ DRAIN TRANSISTOR INTEGRATED WITH HIGH- K AND METAL GATE FOR SUB- TENTH NM TECHNOLOGY LI RUI (B Sc., Univ of Science and Technology of China, CHINA) A THESIS SUBMITTED FOR THE ... integration of germanide Schottky source/ drain Ge channel MOSFET with high- k gate dielectric and metal gate for sub- tenth nm technology...

Ngày tải lên: 14/09/2015, 14:04

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 03/10/2015, 20:31

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 12/10/2015, 17:36

... decomposition process usually completes faster for thinner SRSO layer, resulting in the formation of Si- ncs and SiO2 phase (instead of SiOx one) So, the formation of Si- ncs/SiO2 barrier instead of Si- ncs/SiO ... al.: Hf-based high-k materials for Si nanocrystal floating gate memories Nanoscale Research Letters 2011 6:172 Submit your manuscript to a journal and benefit f...

Ngày tải lên: 21/06/2014, 05:20

... MIM capacitors This section briefly reviews some of the dominant works on the high- k dielectrics in the MIM capacitors for RF applications The insulators used in these works can be classified into ... loss Metal Metal -Insulator -Metal capacitor Fig 1-2: Development of capacitors for silicon integrated circuit from poly-insulatorsilicon structure [4] to poly -insul...

Ngày tải lên: 10/09/2015, 08:31

... thicker layer of oxides of higher dielectric constant (k) Intensive research is underway to develop oxides into new high quality electronic materials 1.4 Alternative high- k gate dielectrics candidates ... process from gate dielectric to Si channel While SiO2 provides us with the remarkable properties as the gate dielectric, the gate leakage current increases exponentially a...

Ngày tải lên: 13/09/2015, 20:42

... the high- k material in consideration EOT is given by tox  thigh  k  kSiO2 / khigh  k , where thigh  k and khigh  k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Di...

Ngày tải lên: 14/09/2015, 08:25

... MOSFET scaling 1.2 High- k dielectrics 1.3 Metal gates 1.4 Band alignments 1.4.1 Band offsets at high- k dielectrics/ semiconductor interfaces 1.4.2 Schottky barrier height at metal gate /high- k dielectrics ... dielectrics/ semiconductor interfaces 1.4.2 Schottky barrier height for metal gate /high- k dielectrics interfaces While metal gate shows its advantages as...

Ngày tải lên: 14/09/2015, 13:27

... gate oxide thickness (tox) * tox=thigh -k* kSiO2/khigh -k, where thigh -k and khigh -k are the physical thickness and the effective relative permittivity of the high- k dielectric, Chapter 1: Introduction ... Copel, M.A Gribelyuk, H Okorn-Schmidt, C D’Emic, P Kozlowski, K Chan, N Bojarczuk, L.-A Ragnarsson, P Ronsheim, K Rim, R.J Fleming, A Mocuta, A Ajmera, “Ultrathin high- k...

Ngày tải lên: 15/09/2015, 17:09

... that, in terms of predicting retention, a daily dose exceeding 80 mg will have a probability of 0.8 in accurately predicting that the patient will be retained in treatment In terms of predicting ... other independent studies also showed that high doses of methadone were significantly more effective in suppressing illicit heroin use and in retaining patients in the...

Ngày tải lên: 11/08/2014, 18:20

... Flash Memory Devices 1.2 Flash Memory Devices Among various non- volatile memory devices, floating gate (FG) type flash memory devices are the core of every modern non- volatile semiconductor memory ... newer applications Thanks to the characteristics of non- volatile memory, it offers a wide range of applications from industrial computers to consumer hand...

Ngày tải lên: 11/09/2015, 09:16