nvestigation of high k gate dielectrics for advanced CMOS application

... dielectric, such as high- k gate dielectric, the physical thickness of the high- k (thigh -k) employed to the EOT can be obtained form the expression: Ch Introduction EOT thigh k = k SiO2 khigh k (1-4) or ... high- k gate dielectrics for advanced CMOS application Several approaches presented in this thesis can be used to effectively solve the major challenges for...

Ngày tải lên: 14/09/2015, 17:46

... EOT = ε SiO T ε high − k high − k , phy (2-3) where EOT is the Equivalent Oxide Thickness of high- k dielectric, εSiO2 and high- k are the permittivity of SiO2 (3.9) and the high- k dielectrics, ... and Thigh -k, phy is the physical thickness of the high- k film In searching suitable high- κ dielectric materials for MIM capacitors, a simple criterion is h...

Ngày tải lên: 12/09/2015, 11:24

... Shang, K. -L Lee, P Kozlowski, C D Emic, I Babich, E Sikorski, M Ieong, H.-S P Wong, K Guarini, and W Haensch, “Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and ... Microprobe with a monochromatic and standard Al X-ray source 27 Chapter 2: Germanium MOS Device with High- κ Gate Dielectric 2.3 Results and discussion 2.3.1...

Ngày tải lên: 14/09/2015, 11:29

... investigation Another exploration of high- k dielectrics for SONOS type memory is to use highk dielectrics as charge storage layer instead of nitride The potential advantages of high- k charge storage ... the formation of NCs, device integration, and the memory performance The implementation of high- k dielectric instead of SiO2 brings additional advantage...

Ngày tải lên: 14/09/2015, 13:32

... (EOT) [17] The impact of the polycrystallization of the Al O layer on the electrical conduction of the gate stack has been analyzed at the nanoscale from current and CPD images obtained on fresh ... strength of the grain boundaries Finally, the influence of the environment conditions on the study of polycrystalline high-k dielectrics was also anal...

Ngày tải lên: 21/06/2014, 06:20

... the high- k material in consideration EOT is given by tox  thigh  k  kSiO2 / khigh  k , where thigh  k and khigh  k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Di...

Ngày tải lên: 14/09/2015, 08:25

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 03/10/2015, 20:31

... (1) Ge on top of the high- k dielectrics material, which constitutes the structure called Germanium-on-insulator (GeOI); (2) high- k material on top of the Ge, which forms the stack of high- k gate ... first-principles study of interface of high- k material (STO) with Ge, and experimental study of crystal growth of Ge on high- k material (STO...

Ngày tải lên: 12/10/2015, 17:33

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 12/10/2015, 17:36

... J.P. Thalen – April/June 2006 – University of Twente ADAS Interface Design Abstract Abstract ADAS For the Car of the Future Interface Concepts for Advanced Driver Assistant Systems in a Sustainable Mobility Concept of 2020 Background ­ Intelligent Vehicle Systems offer great potential to future  mobility. An increase of intelligent in­vehicle  ... ADAS Interface Design Report title:  ADAS ...

Ngày tải lên: 23/03/2014, 10:20

... the 3D wavelet transform, Kutil and Uhl have conducted a study of the software and hardware needs of the 3D wavelet transform [14] They have centered their study on the classic wavelet transform ... speed-up, and the quality of the signal 2.3 GOF-based 3D- WT One of the major challenges to overcome when computing the 3D- WT has to with the developm...

Ngày tải lên: 22/06/2014, 19:20

... yield information on this problem The RBE value of 14.6 for cell reproductive death is similar to values in the range of to 15 published for many other lines of cultured cells [45] The RBE of derived ... in tumour cells fail to correlate with their radiosensitivity [7] On the other hand, the RBE values for induction of chromosome aberrations are q...

Ngày tải lên: 09/08/2014, 09:20

... APPLICATION OF COMMITTEE k-NN CLASSIFIERS FOR GENE EXPRESSION PROFILE CLASSIFICATION Manik Dhawan Thesis Approved: Accepted: _ Advisor Dr Zhong-Hui Duan _ Dean of ... informative genes to feed a series of k-NN classifiers each having a different architecture Recruit the top performing k-NN classifiers to form a committee Evaluate the k-NN classifier based...

Ngày tải lên: 30/10/2014, 20:03

... father and my sister iv Nam Nguyen-Quang High-frequency matrix converters for induction heating To my mother v Nam Nguyen-Quang High-frequency matrix converters for induction heating Table of Contents ... most popular technique for 37 Nam Nguyen-Quang High-frequency matrix converters for induction heating the analysis and design of resonant c...

Ngày tải lên: 13/11/2014, 06:49

... integration of high- k dielectric with wide band- gap semiconductors 11 1.4 Research approaches 14 1.4.1 Nitridation treatment 14 1.4.2 Band offsets at high- k/ wide band- gap semiconductor ... offset and valence band offset between high- k dielectrics and wide band- gap semiconductors, respectively Band offsets above eV is one of the key criteria in t...

Ngày tải lên: 10/09/2015, 15:52