Silicon micromachined resonant accelerometer with CMOS interface circuits
Silicon micromachined resonant accelerometer with CMOS interface circuits
... principle of silicon resonant accelerometer will be presented - 19 - Silicon micromachined resonant accelerometer Chapter 3.1 HE LIN 2008 Silicon resonant accelerometer Sense principle A resonant accelerometer ... of this work with previous capacitive MEMS accelerometer 104 7.3 Comparison of this work with previous silicon resonant accelerometer 104 - vii -...
Ngày tải lên: 14/09/2015, 14:13
Silicon carbide nanowires synthesized with phenolic resin and silicon powders
... are key factors for the formation of b-SiC nanowires This paper proposed a method to synthesize SiC nanowires with phenolic resin and silicon powders without using any metal catalysts The advantages ... of SiC nanowires includes the following steps: (1) As is described in our previous work [23], precursor powders, core/shell silicon/ phenolic resin powders, were fabri...
Ngày tải lên: 16/03/2014, 15:20
Design of Analog CMOS Integrated Circuits potx
... Design of Analog CMOS Integrated Circuits Behzad Razavi Errata in Problem Sets Chapter In Eq (2.44), n must be ... gate voltage of M2 to Vb2 In Problem 3.4, Fig 3.71(a), change the gate voltage of M= to Vb1 In Fig 3.72(e), Vb1 must be changed to Vin In Fig 3.73(h), the output is at the source of M2 In Problem ... change M2 to M1 Problem 10.17 should read: between the gate a...
Ngày tải lên: 23/03/2014, 08:20
parasitic-aware optimization of cmos rf circuits
... Parasitic-Aware Optimization of CMOS RF Circuits This page intentionally left blank Parasitic-Aware Optimization of CMOS RF Circuits by David J Allstot Kiyong Choi Jinho Park University of ... Design of Mixers 98 Optimization of Mixers COST FUNCTION 5.1 PARAMETER TO BE OPTIMIZED 5.2 99 99 100 Parasitic-aware optimization of CMOS RF circuits x 5.3 O...
Ngày tải lên: 01/06/2014, 10:55
báo cáo hóa học:" Stabilization of mid-sized silicon nanoparticles by functionalization with acrylic acid" pptx
... Stabilization of mid-sized silicon nanoparticles by functionalization with acrylic acid Robert Bywalez*1, Hatice Karacuban2, Hermann Nienhaus2,3, Christof Schulz1,3, and Hartmut ... that functionalization of mid-sized silicon nanoparticles is challenging While the functionalization with alkenes, as also established in our group, yields stable dispersions from s...
Ngày tải lên: 21/06/2014, 17:20
Báo cáo hóa học: " Editorial CMOS RF Circuits for Wireless Applications" doc
... also a President of CMOS Emerging Technologies, Inc., a consulting company in Vancouver His research interests are in advanced CMOS devices and circuits for ultra-low-power wireless systems, medical ... around the world related to RF- MEMS devices, RFICs, and millimeter-wave passive circuits He published over 60 technical papers, and one book chapter on lowvoltage 5-GHz RFIC fron...
Ngày tải lên: 22/06/2014, 22:20
Silicon micromachined vibratory diffraction gratings for miniaturized high resolution rapid laser scanning
... Cheo, F.S Chau, “MEMS-driven diffraction gratings for rapid scanning of laser beams with very high optical resolution Proceedings of the SPIE - The International Society for Optical Engineering, ... the dynamic deformation of the micromachined thin reflector has became a limiting factor for realizing high- speed high- resolution laser scanning, such as projection d...
Ngày tải lên: 09/09/2015, 18:57
nGaAs n MOSFETS with CMOS compatible sourcedrain technology and the integration on si platform
... a InGaAs transistor with non-self-aligned S/D contacts, showing the various resistance components in a device Rc, Rn-doped, and Rchannel are the contact resistance, the resistance of the n- doped ... important for enabling the co -integration of highmobility InGaAs electronic and photonic devices on Si substrate at the intra-chip level Finally, the main contributions...
Ngày tải lên: 10/09/2015, 09:26
Phase change memory engineering and integration with CMOS technology
... Non-volatile Memory Technology 1.2 Phase Change Memory Technology 1.2.1 Phase change materials and memory device structures 1.2.2 Basic principles of phase change memory 1.2.3 Phase ... nitrogen doping concentration and application in phase change memory 154 7.1.4 Silicide electrode contacts for compact integration of phase change memory with CMO...
Ngày tải lên: 10/09/2015, 15:53
Micromachining of silicon via ION irradiation with porous silicon formation 1
... characterization of the various anodization parameters for silicon wafers of di erent resistivities as well as the characterization of the reduced porous silicon formation rate for irradiated silicon ... together with the formation of porous silicon This thesis also aims to apply this micromachining method for the fabrication of various devices and structures for...
Ngày tải lên: 11/09/2015, 10:02
Micromachining of silicon via ION irradiation with porous silicon formation 2
... reduced PSi formation rates show similar trends with irradiation Chapter E ects of ion irradiation on roughness of silicon surface After machining silicon structures and devices, one often needs ... 10 mA/cm2 , 30mA/cm2 , 50mA/cm2 , 70mA/cm2 and 83 mA/cm2 Trial (red): 10 mA/cm2 , 30mA/cm2 , 50mA/cm2 , 70mA/cm2 and 83 mA/cm2 Trial (green): 30mA/cm2 , 60mA/cm2 , 90mA/cm2 All l...
Ngày tải lên: 11/09/2015, 10:02
Micromachining of silicon via ION irradiation with porous silicon formation 3
... darker layers are of lower porosity Fig 5 .3 shows the cross sections of successfully fabricated multilayer PSi structures With the knowledge of the PSi formation rates (Fig 3. 2) at di erent current ... (d): Ratio Rn/n Figure 5.8: (a): Variation of the unirradiated result to that of The assumption that the refractive index remains unchanged with ion irradiation is 60...
Ngày tải lên: 11/09/2015, 10:02