Schottky source drain transistor integrated with high k and metal gate for sub tenth nm technology

... SCHOTTKY SOURCE/ DRAIN TRANSISTOR INTEGRATED WITH HIGH- K AND METAL GATE FOR SUB- TENTH NM TECHNOLOGY LI RUI (B Sc., Univ of Science and Technology of China, CHINA) A THESIS SUBMITTED FOR THE ... integration of germanide Schottky source/ drain Ge channel MOSFET with high- k gate dielectric and metal gate for sub- tenth nm technology...

Ngày tải lên: 14/09/2015, 14:04

... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...

Ngày tải lên: 16/10/2015, 15:37

... Hình 11: Công bố Intel nghiên cứu công nghệ high – k Phát kiến transistor high- k plus metal gate đột phá quan trọng Mặc dù tiếp tục giảm k ch thước transistor tới 45nm theo công nghệ cũ, không cần ... xuất theo công nghệ sử dụng hoàn toàn Hafnium Hình vẽ thể công nghệ thay Silicon – dioxide vật liệu high k mà Intel làm được: Hình 8: Công nghệ th...

Ngày tải lên: 17/05/2015, 18:10

... Shang, K. -L Lee, P Kozlowski, C D Emic, I Babich, E Sikorski, M Ieong, H.-S P Wong, K Guarini, and W Haensch, “Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and ... Microprobe with a monochromatic and standard Al X-ray source 27 Chapter 2: Germanium MOS Device with High- κ Gate Dielectric 2.3 Results and discussion 2.3.1...

Ngày tải lên: 14/09/2015, 11:29

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 03/10/2015, 20:31

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 12/10/2015, 17:36

... gate oxide thickness (tox) * tox=thigh -k* kSiO2/khigh -k, where thigh -k and khigh -k are the physical thickness and the effective relative permittivity of the high- k dielectric, Chapter 1: Introduction ... Copel, M.A Gribelyuk, H Okorn-Schmidt, C D’Emic, P Kozlowski, K Chan, N Bojarczuk, L.-A Ragnarsson, P Ronsheim, K Rim, R.J Fleming, A Mocuta, A Ajmera, “Ultrathin high- k...

Ngày tải lên: 15/09/2015, 17:09

... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...

Ngày tải lên: 16/09/2015, 08:31

... hMnSOD has a low level of product inhibition, similar to that of the parent mutant Q143A hMnSOD, while exhibiting higher catalytic activity and efficiency Although even higher catalytic activity would ... efficiency and similarly low product inhibition compared with the Q143A hMnSOD parent Our results demonstrate the ability of directed evolution to engineer variants...

Ngày tải lên: 07/03/2014, 11:20

... Establishment of astroglial cell lines from SAMR1, SAMP8 and ICR mice Primary astrocyte cells were cultured from day neonates from SAMR1, SAMP8, and ICR mice [17] Cells were obtained from neonates ... Retrovirology 2008, 5:104 http://www.retrovirology.com/content/5/1/104 Figure Confirmation of cell- type of established astroglial cell lines by immunocytochem...

Ngày tải lên: 13/08/2014, 05:21

... the high- k material in consideration EOT is given by tox  thigh  k  kSiO2 / khigh  k , where thigh  k and khigh  k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Di...

Ngày tải lên: 14/09/2015, 08:25

... Yoshitomi, Y Ebuchi, H Kimijama, T Ohguro, E Morifuji, H S Momose, K Kasai, K Ishimaru, F Matsuoka, Y Katsumata, M Kinugawa, and H Iwai, High performance MIM capacitor for RF BiCMOS LSIs,” in Proc ... method, and a high capacitance density of 17 fF/µm2 has been achieved for AlTaOx MIM capacitor [41] In particular, the RF performance of high- κ MIM capacitors have b...

Ngày tải lên: 16/09/2015, 17:11

... 3,6 kV) Power cables with extruded insulation and their accessories for rated voltages from kV (Um = 1,2 kV) up to 30 kV (Um = 36 kV) Part 1: Cables for rated voltages of kV (Um = 1,2 kV) and kV ... POWER CABLES WITH EXTRUDED INSULATION AND THEIR ACCESSORIES FOR RATED VOLTAGES FROM kV (Um = 1,2 kV) UP TO 30 kV (Um = 36 kV) Part 1: Cables...

Ngày tải lên: 25/12/2013, 11:08

... exhibits a maximum at thereafter Hypothetical data set a heritability value of about 0.81 and decreases rapidly by Gianola and Foulley Table II shows the maximum a posteriori estimates of the parameters ... use of an animal model is currently the state of the art for genetic evaluation of breeding animals Basically, all the practical and theoretical reasons in...

Ngày tải lên: 09/08/2014, 18:22