Metallic thin film on sige si substrates 3
Metallic thin film on sige si substrates 3
... reached Si Ge 3 3 Ge diffusion (b) 500oC (a) RT Ge desorption Ge desorption 3 3 Ge diffusion (c) 620oC Ge diffusion (d) 640-700oC Fig 3. 19 Schematic drawing of the cross-section structure of Si0 .8Ge0.2 ... explain the reason for Ge desorption from Si0 .8Ge0.2 in region-II, we will resort to the difference in bond dissociation enthalpies of Ge-Ge, Ge -Si and SiSi, which are 2. 73,...
Metallic thin film on sige si substrates 1
... Co95-96 ,10 3 -10 5, Cr95 ,10 5, Dy102, Ir95 ,10 5, Mn105, Mo95 ,10 5, Ni94,95,98 -10 1 ,10 4 -10 5, Pd95,97-98 ,10 1 ,10 3, Pt94,99 ,10 1, Re105, Rh95, Ru105, Ta95, Tb102, Ti95 and W95 ,10 5 According to their oxidation ... more pronounced for Ge-rich Si1 -xGex Similar to Park’s observation122, only SiO2 is formed on the surface for low Ge content Si1 -xGex such as SiGe (10 -25% Ge )11...
Metallic thin film on sige si substrates 2
... shown in Fig 2. 12 Si 2p Intensity (a.u.) Si 2p3 /2 1 02 Si 2p1 /2 101 100 99 98 97 Binding Energy (eV) Fig 2. 12 Curve-fitting of Si 2p XPS spectrum The overlapping Si 2p3 /2 and Si 2p1 /2 are resolved ... clean Si (001) surfaces 44 Chapter Experimental 2. 2.3 Ni deposition method In this dissertation work, Ni deposition on Si, Ge and Si0 .8Ge0 .2 surface is achi...
Metallic thin film on sige si substrates 4
... grows on H -Si( 001) (Fig 4. 5) and clean Si( 001) (Fig 4. 11) can be rationalized as follows The passivation of Si dangling bond by hydrogen on the surface appears to promote diffusion of adatoms on ... surface morphology of Ni thin film grown on Ge substrates, although the effect is not as significant as on Si substrates 144 Chapter Ni Growth on Si, Ge & Si0 .8Ge...
Metallic thin film on sige si substrates 5
... 20% Ni/H -Si( 001) 10% Ni/H -Si( 001) 858 857 Before oxidation 856 855 854 853 852 851 Binding Energy (eV) Intensity (a.u.) (a) 859 75% Ni/H -Si( 001) 60% Ni/H -Si( 001) 50 % Ni/H -Si( 001) 41% Ni/H -Si( 001) ... 6.0 Ni 2p3/2 ~ Ge 2p3/2 5. 5 Ni 2p3/2 ~ Ge 3d Ni% 5. 0 4 .5 4.0 3 .5 3.0 2 .5 2.0 1 .5 40 45 50 55 60 65 70 75 o 80 85 90 95 Photoelectron take-off angle ( ) Fig 5. 19...
Metallic thin film on sige si substrates 6
... Ni 2Si- like thin films Si Si-Substrate Ni 3λ increase temperature (a) NiSi thin films Si Si-Substrate increase temperature (b) NiSi2 thin films 3λ Si- Substrate (c) Fig 6. 8 Schematic representation ... layers 3λ Si, Ge or Si0 .8Ge0.2 -substrates Fig 6. 7 A schematic drawing of the “NiSi-like”, “NiGe-like” and “NiSi0.8Ge0.2-like” layers upon Ni thin films deposition on S...
Metallic thin film on sige si substrates 7
... semiconductor materials GaN, AlN, InN, BN, SiC, SiGe New York, John Wiley, 2001 E Kasper and L Klara, Properties of Silicon Germanium and SiGe: Carbon London, INSPEC, 2000 F d'Heurle, C.S Petersson, ... and the substrates (Si/ Ge) were oxidized on all Si, Ge and Si0 .8Ge0.2 substrates A power law can be used to fit the evolution of SiO2 /Si and (GeO2+GeO)/Ge ratio as a function of...
Báo cáo hóa học: " Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy" ppt
... interference in our Al thin film Conclusions In conclusion, we have performed magnetotransport measurements on an aluminum thin film grown on a GaAs substrate A crossover from electron- to holedominant ... Chiquito AJ: Magnetoresistance in Sn-Doped In2 O3 Nanowires Nanoscale Res Lett 2009, 4:921 12 Hikami S, Larkin AI, Nagaoka Y: Spin-Orbit Interaction and M...
Báo cáo vật lý: "Electrical Conductivity of Chlorophyll with Polythiophene Thin Film on Indium Tin Oxide as P-N Heterojunction Solar Cell" ppsx
... deposition of different thicknesses of CHLO thin films on the PT thin films is also successfully done by spin coating technique The electrical conductivity in dark condition was increased with the ... increasing of PT thin film thickness While, with the increasing of CHLO thin film thickness, electrical conductivity in the dark is consecutively change Under dark...
Tài liệu Báo cáo " Survey of WO3 thin film structure built on ito/glass substrates by the Raman and xrd spectroscopies" doc
... case, the vibrational frequencies of m -WO3 are quite higher than these of o -WO3 And the reason is that parameters of crystalline structure of m -WO3 are smaller than that of o -WO3 or the force constant ... cm-1 of covalent bonds W – O, there is only one clear modification, comparing to Raman spectra of film on thinner ITO layers The only difference is a...
Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment docx
... reduction of electron concentration in the N2 Otreated films Conclusions The postfabrication N2 O plasma treatment on the asfabricated MOCVD ZnO TFTs changed their device operation from depletion-mode ... number of ionized oxygen vacancies in the ZnO film.57–59,61–63) In general, an ionized oxygen vacancy in a ZnO film donates two electrons to the conduction band, which is mainly res...
Báo cáo hóa học: " Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application" potx
... region (a) Schematically illustration of multi-bit storage operation for embossed regions on a PZT film (b) Remnant polarization ratio of the embossed and the un-embossed regions in a PZT film ... http://www.nanoscalereslett.com/content/6/1/474 characterizations The same measurements were also performed on un-patterned regions for comparison Results and discussion Figure 1a il...
Báo cáo hóa học: " Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si" pot
... Position is plotted vertically along the sample where one region has a 20-nm Au film (top of Figure 1) and the bottom region only Si (c-d) SEM images corresponding to the postirradiation condition ... concentration of gold in the sample during irradiation as a function of fluence after LEISS and XPS quantification The plot of relative concentration (% Au) versus fluence displays t...
influence of polymerization temperature on nh3 response of pani tio2 thin film gas sensor
... Response time (T1 ) and recovery time (T2 ) of sensors based on PANI/ TiO2 thin films prepared at 0, 10 and 20 ◦ C when exposed to NH3 of various concentrations at room temperature Concentration ... absorbance wavelengths of PANI/ TiO2 thin films prepared at different polymerization temperature Polymerization temperature (◦ C) Fig FTIR spectra of pure PANI an...
sensitivity properties of a novel no2 gas sensor based on mesoporous wo3 thin film
... Selected-area electron diffraction patterns recorded on mesoporous WO3 that is characteristic of diffuse electron diffraction rings demonstrate that the walls of our material are made up of nanocrystallite ... lead to excellent sensing properties upon exposure to low concentration of NO2 in air at low temperatures and enabled the selective detection of NO2 and H2 gases...
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