Advanced gate stack for CMOS nanotechnology

... Metal gate/ SiO2 stack (b) Metal gate/ high-k stack Metal gate High-k dielectric SiO2 Si substrate SiO2 Si substrate Fig 1.3 An illustration of (a) metal gate/ SiO2 and (b) metal gate/ high-k stacks formed ... Typical gate leakage and (b) breakdown voltage showed better characteristics for NiSi gate stack incorporating a YIL and a TbIL A RTA at 950ºC was conducted before FUS...

Ngày tải lên: 11/09/2015, 16:01

... 1. 2 -1. 6 0. 9 -1. 3 0. 8 -1. 2 0. 7 -1. 1 Gate leakage at 10 0 oC for high performance (A/cm2) 2 70 4 ,00 0 17 ,00 0 54 ,00 0 1 10 , 000 Gate leakage at 10 0 oC for lowoperating-power (A/cm2) 0. 57 2 .19 4.55 18 .75 90. 9 Gate ... 22 16 11 EOT for high-performance (nm) 0. 9 -1. 4 0. 6 -1. 1 0. 5 -0. 8 0. 4 -0. 6 0. 4 -0. 5 EOT for low-operating-power (nm) 1....

Ngày tải lên: 15/09/2015, 21:16

... ADVANCED GATE STACKS FOR NANO- SCALE CMOS TECHNOLOGY WANG XIN PENG (M Eng., Tsinghua University; B Eng., Tsinghua University) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... Developments in Advanced Gate Stacks Involving High-k Dielectrics and Metal Gates Chapter Developments in Advanced Gate Stacks Involving High-k Dielectrics and Metal Gates 2.1 High-k Gate Di...

Ngày tải lên: 15/09/2015, 21:16

... mask effect on gate stacks of metal electrode / high- K dielectric should be investigated and understood for successful implementation of hard mask in the gate stack 1.3.4 Challenges of Metal Electrode ... replace current SiO2 dielectric and poly-Si electrode for continuous success of CMOS technology The study on the formation of advanced gate stacks usin...

Ngày tải lên: 12/09/2015, 08:16

... FABRICATION OF ULTRA- SHALLOW JUNCTIONS AND ADVANCED GATE STACKS FOR ULSI TECHNOLOGIES USING LASER THERMAL PROCESSING CHONG YUNG FU (B A Sc (First Class Hons.), NTU) A THESIS SUBMITTED FOR ... fabricate ultra- shallow p+/n junctions and advanced poly-Si gate stacks for ultra- large scale integration technologies LTP of ultra- shallow ju...

Ngày tải lên: 12/09/2015, 11:29

... dielectric, such as high- k gate dielectric, the physical thickness of the high- k (thigh -k) employed to the EOT can be obtained form the expression: Ch Introduction EOT thigh k = k SiO2 khigh k (1-4) or ... high- k gate dielectrics for advanced CMOS application Several approaches presented in this thesis can be used to effectively solve the major challenges for...

Ngày tải lên: 14/09/2015, 17:46

... p-FET performance i In summary, novel devices employing novel strain engineering techniques were studied They show promising potential for augmenting the performance of conventional CMOS transistors ... describe to my daddy, my mummy and my lovely brother, Henry I thank them for their care and love in my entire life, and thank daddy and mummy for the sacrifices they have...

Ngày tải lên: 14/09/2015, 08:37

... replacement for SiO2, the present work is aimed at exploring the feasibility of using atomic layer deposited (ALD) Hf -based materials as gate dielectrics in deep sub- 0.1 µm CMOS technology As ... Alternating Current ADF Annular Dark Field AFM Atomic Force Microscopy ALCVD Atomic Layer Chemical Vapor Deposition ALD Atomic Layer Deposition ALE Atomic Layer Ep...

Ngày tải lên: 30/09/2015, 14:23

... Addressing profitability challenges in Advanced Fiber Management for FTTP networks Advanced fiber management systems incorporate the latest techniques for optimizing access networks for accessibility ... profitability challenges in advanced fiber management for FTTP networks Out with the old Traditional ODF solutions are basically configured w...

Ngày tải lên: 21/12/2013, 07:17

... loves selling personal training, and loves showing other trainers how to get into sales too Webinar Objectives • Reveal Chris’s Step by Step Sales System • Provide You With Specific Tips, Techniques, ... new trainer to opening new locations with 10 sales managers & 15 trainers at each one for a major gym chain • He often *CRUSHED* his goal of $250,000 of membership & pe...

Ngày tải lên: 19/02/2014, 10:20

... stages for a domino path is typically comparable to the best number for a static path because both the best stage effort and the path effort 33 34 SOLUTIONS decrease for domino Using the same design, ... A B C D Y CHAPTER SOLUTIONS 4.11 D = N(GH)1/N + P Compare in a spreadsheet Design (b) is fastest for H = or Design (d) is fastest for H = 20 because it has a lower logical...

Ngày tải lên: 19/02/2014, 15:20

... original work is properly cited 22 Advanced Video Coding for Next-Generation Multimedia Services transform to produce a robust video coder An error-resilient video coding scheme using the MD technique ... Advanced Video Coding for Next-Generation Multimedia Services efficiency and error-resiliency The default settings of the original JM9.4 reference encoder are...

Ngày tải lên: 06/03/2014, 22:20

Ngày tải lên: 08/03/2014, 01:20

... ADVANCED VIDEO CODING FOR NEXTGENERATION MULTIMEDIA SERVICES Edited by Yo-Sung Ho Advanced Video Coding for Next-Generation Multimedia Services http://dx.doi.org/10.5772/45846 ... orders@intechopen.com Advanced Video Coding for Next-Generation Multimedia Services, Edited by Yo-Sung Ho p cm ISBN 978-953-51-0929-7 Contents Preface VII Section Advanced V...

Ngày tải lên: 16/03/2014, 22:20