Growth and characterization of germanium and silicon nanostructures

... exploration of self-assembled synthesis and the possible applications of new Si and/ or Ge nanostructures and, (b) achieving a controlled growth of Si and Ge nanostructures 1.4 Organization of Thesis ... Abstract In this dissertation, the growth and characterization of five different types of germanium (Ge) and silicon (Si) nanostructures are presented Th...

Ngày tải lên: 11/09/2015, 10:04

... of carbon before 2004 Nanotubes Graphite Sheets 1D 2D The most beautiful side of carbon Fullerene Amorphous Carbon 0D 3D The dark, soft and tough side of carbon The shining and hard side of carbon ... Structure of Two Dimensional Carbon 1.3 Carbon Nanowalls – Disordered 2D Carbon 1.3.1 Fabrication of Carbon Nanowalls 1.3.2 Structure and Morphology 11 1....

Ngày tải lên: 14/09/2015, 08:40

... [10±13] and thermal evaporation [14±17] are two methods normally used for the synthesis of SiNWs The key point in these two methods is the formation of a sucient amount of silicon atoms and/ or silicon ... made of a Si core and a SiO2 sheath The one-dimensional growth of SiNWs is facilitated by the SiO2 sheath that con®nes the lateral growth of SiNWs, and the...

Ngày tải lên: 16/03/2014, 15:06

... FABRICATION AND CHARACTERIZATION OF GERMANIUM PHOTODETECTORS WANG JIAN B Sci (Peking University, P R China) 2006 A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL ... due to its ease of process Due to the bandwidth-efficiency tradeoff, typical NI incidence Ge photodetectors offer moderate quantum efficiencies and bandwidths Among the re...

Ngày tải lên: 10/09/2015, 15:47

... crystalline silicon without oxygen and other impurities Conclusion Tin- catalyzed silicon nanowires (SiNWs) were synthesized at various hydrogen gas flow rates using the hydrogen radical- assisted deposition ... images of the as -synthesized SiNWs at hydrogen gas flow of (a) 130 sccm, (b) 150 sccm and (c) 180 sccm All the scale bars represent 2.5 µm (d) XRD patt...

Ngày tải lên: 16/03/2014, 15:10

... dissertation, the growth and characterization of nickel oxide (NiO) for various novel device applications are investigated In the aspect of growth, many methods of both solution-based and physical ... nanowires was demonstrated for the first time The applications of NiO thin films and nanostructures were then investigated for resistive switching memo...

Ngày tải lên: 09/09/2015, 10:07

... understanding of the physical and chemical properties of solid surface and interface is of great importance in many areas of science and technology, such as in material growth, chemical reactions and ... images of MnSb crystallites with diameter of (b) nm and (c) 15 nm 96 Fig 5.3 (a) Core-level XPS spectra of Mn 2p of MnSb nanoparticles with different d (b) Mn...

Ngày tải lên: 07/10/2015, 10:10

... method of pulsed laser deposition (PLD); investigate the growth mechanism of high quality MgO films on silicon Fabricate highly oriented CoFe2O4 films on silicon with the help of MgO buffer layer and ... thesis 2.1.1 Pulsed- laser deposition One of the most significant approaches to oxide film growth is pulsed- laser deposition Pulsed- laser dep...

Ngày tải lên: 07/10/2015, 10:10

... characteristics of the fabricated SiNWs solar cell under dark and light conditions the thickness of Si base substrate more thinly For improvement of conversion efficiency of the SiNWs solar cells, the ... performance Therefore, further reduction of the reflectance will be expected from the optimization of the synthesis conditions of SiNWs For analysis of the electri...

Ngày tải lên: 16/03/2014, 15:12

... asymptotically the value of the band-gap of the undoped Si-nw This is another indication of how doping can modify the electronic and optical properties of the Si nanostructures Conclusions 3.2 3.4 ... systematic analysis of the effect of the B and P codoping in Si-nw, concentrating not only on the structural properties but also on how doping i...

Ngày tải lên: 16/03/2014, 15:15

... Fig – XPS Spectra of WO3 nanostructures: a) O1 s and b) W4 f axis with an inter-planar distance of 0.38 nm Raman, EDS and XPS analysis confirmed that the chemical structure and oxidation states ... procuring WO3 nanostructures is a modification of the method reported by Albiter et al for MoO3 nanorods [20] and Therese et al for WO3 nanostructures [18] The main d...

Ngày tải lên: 20/03/2014, 13:08

... al.: Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires Nanoscale Research Letters 2011 6:469 Submit your manuscript to a journal and ... July 2011 Figure The optical reflectivity and PL spectra of Si-O-N nanowires (a) Reflectivity of Si-O-N nanowire mat and its comparison with literature data of...

Ngày tải lên: 21/06/2014, 01:20

... article as: Gryzia et al.: Preparation of monolayers of [MnIII6CrIII] 3+ single-molecule magnets on HOPG, mica and silicon surfaces and characterization by means of non-contact AFM Nanoscale Research ... explained by a neutralization of charge of [MnIII6CrIII]3+ caused by the mirror-charge effect in the first layer but by anions in the other ones...

Ngày tải lên: 21/06/2014, 01:20

... doi:10.1186/1556-276X-6-187 Cite this article as: Potié et al.: Growth and characterization of gold catalyzed SiGe nanowires and alternative metal -catalyzed Si nanowires Nanoscale Research Letters 2011 ... mechanical characterization has also been carried out on Si and GaN NW for comparison SiGe NW growth First, the growth of SiGe NW using gold as c...

Ngày tải lên: 21/06/2014, 05:20

... paths of secondary electrons and fluorescence photons at the absorption edges probed Information on the bulk of the film was provided by the TEY spectra at the Si K-edge and the FLY spectra at the ... aspects of the isochronal study as well as the acquisition of XANES data in the isothermal study KD participated in the acquisition and analysis of RBS da...

Ngày tải lên: 21/06/2014, 05:20