Micromachining of silicon via ION irradiation with porous silicon formation 3

... characterization of the various anodization parameters for silicon wafers of dierent resistivities as well as the characterization of the reduced porous silicon formation rate for irradiated silicon ... together with the formation of porous silicon This thesis also aims to apply this micromachining method for the fabrication of various devices and structures for...

Ngày tải lên: 11/09/2015, 10:02

... reduced PSi formation rates show similar trends with irradiation Chapter Eects of ion irradiation on roughness of silicon surface After machining silicon structures and devices, one often needs ... 10 mA/cm2 , 30mA/cm2 , 50mA/cm2 , 70mA/cm2 and 83 mA/cm2 Trial (red): 10 mA/cm2 , 30mA/cm2 , 50mA/cm2 , 70mA/cm2 and 83 mA/cm2 Trial (green): 30mA/cm2 , 60mA/cm2 , 90mA/cm2 All l...

Ngày tải lên: 11/09/2015, 10:02

... darker layers are of lower porosity Fig 5 .3 shows the cross sections of successfully fabricated multilayer PSi structures With the knowledge of the PSi formation rates (Fig 3. 2) at dierent current ... (d): Ratio Rn/n Figure 5.8: (a): Variation of  the unirradiated result to that of The assumption that the refractive index remains unchanged with ion irradiation is 60...

Ngày tải lên: 11/09/2015, 10:02

... or with an optical ber [ 84] These kind of concave cavities are of interest in quantum information science, particularly in the fabrication of atom chips [49 , 84] or for small particles detections ... prevent irradiation induced-damage to the underlying silicon The uence was set at ¢ 10 14 ions/cm2 , which is high enough to greatly reduce the subsequent rate of PSi formation...

Ngày tải lên: 11/09/2015, 10:02

... Conclusion The technique and capability of two and three dimensionally micro machining silicon/ PSi using ion irradiation together with PSi formation is clearly presented in this thesis In addition, ... this machining technique of silicon using ion irradiation is Three dimensional and free standing silicon structures, thin silicon walls, thin silicon lms as well as s...

Ngày tải lên: 11/09/2015, 10:02

... Session Log out from your CDE session, then log back in to see what has changed 3- 36 Fundamentals of Solaris Copyright 1999 Sun Microsystems, Inc All Rights Reserved Enterprise Services August 1999, ... any aspects of this exercise q  Experiences Applications Explore with students how they might apply what they learned in this exercise to situations at their workplace Fundamen...

Ngày tải lên: 13/08/2014, 02:23

... dimensions These nanoparticles necessarily have a size smaller than the pores of the AAO mask and will be responsible for the constant dimensions of the synthesized nanowires Figure shows the surface of ... structure of the membrane and before the treatment conditions allow the nanowires growth As can be seen there, the catalyst can be observed as small particl...

Ngày tải lên: 21/06/2014, 01:20

... Position is plotted vertically along the sample where one region has a 20-nm Au film (top of Figure 1) and the bottom region only Si (c-d) SEM images corresponding to the postirradiation condition ... concentration of gold in the sample during irradiation as a function of fluence after LEISS and XPS quantification The plot of relative concentration (% Au) versus fluence displays t...

Ngày tải lên: 21/06/2014, 03:20

... characterization Chapter focuses on the procedure of fabrication of silicon- on-oxidized porous silicon waveguides Fabrication of silicon- on-oxidized porous silicon waveguides using our ion irradiation and ... motivation of our work is to investigate different schemes to fabricate different kinds of low loss silicon waveguides and c-bend waveguides u...

Ngày tải lên: 09/09/2015, 11:21

... machining process via ion beam irradiation will be applied to fabrications of silicon photonics in 2D and 3D on bulk silicon and SOI platforms The ion beam irradiation induced silicon machining process ... in Si photonics A review of other studies on the fabrication of Si photonic devices is also presented 1.1 Photonics and Si photonics The word photo...

Ngày tải lên: 10/09/2015, 09:04

... Letters 371 ( 200 3) 394– 400 coverage, when the carbothermal reduction occurring at the CNPs/substrate interface is terminated after complete consumption of CNPs in contact with Si On the contrary, ... Letters 371 ( 200 3) 394– 400 Fig Pyramidal-shaped voids formed at the CNPs /Si(1 0) interface annealed at 105 0 °C (a) SEM image of pyramidal void and (b) magnified view of silicon n...

Ngày tải lên: 16/03/2014, 15:08

... Metal- assisted growth of SiNWs A basic aspect of the VLS mechanism is the metal particle acting as a catalyst for the anisotropic growth of SiNW with a crystalline structure A catalyst particle ... substrate (Fig 2B a) , a liquid metal Si alloy will be formed With more and more Si atoms added, the Si content in the If the growth with a...

Ngày tải lên: 16/03/2014, 15:09

... asymptotically the value of the band-gap of the undoped Si-nw This is another indication of how doping can modify the electronic and optical properties of the Si nanostructures Conclusions 3.2 3.4 ... systematic analysis of the effect of the B and P codoping in Si-nw, concentrating not only on the structural properties but also on how doping i...

Ngày tải lên: 16/03/2014, 15:15

... silicon islands with the STM and examined the quality of STM images of the islands Note that after the creation of islands with the STM, the accumulation of silicon atoms on the tip apex was not ... distinguish mechanisms of the early stage and late stage of island growth At the late stage, the transfer of silicon atoms from the STM tip...

Ngày tải lên: 16/03/2014, 15:32

... demonstrated the growth of thin SiO2 layers with embedded metal and metal silicide NCs by the combination of Si:Me mixture by PLD at room temperature and its thermal oxidation By means of this fabrication ... doi:10.1186/1556-276X-6-148 Cite this article as: Novikau et al.: Properties of silicon dioxide layers with embedded metal nanocrystals produ...

Ngày tải lên: 21/06/2014, 05:20