Polymer electronic memories materials, devices mechanisms

... memory devices based on conformation change, while still maintaining significant ON/OFF current ratios 22 Chapter Chapter Literature Review 2.1 Polymer Electronic Memories Polymer electronic memories ... single-layer devices based on two non-conjugated polymers While 19 Chapter non-rewritable memory effects were observed for both polymer devices, the volatilities of the po...

Ngày tải lên: 11/09/2015, 09:09

... W R Fahrner (Editor) Nanotechnology and Nanoelectronics Materials, Devices, Measurement Techniques With 218 Figures 4y Springer Prof Dr W R Fahrner University ... not restricted to nanoelectronics alone but can also be valid for materials, methods, and systems There are schools and institutions which are engaged in predictions of how nanotechnology will ... 5.2.1 Optic...

Ngày tải lên: 27/06/2014, 06:20

... 96, 97 band gap – diamond – GaAlAs 14 – GaAs 14, 214 – silicon 8, 10 – Sin clusters band gap engineering 139, 183, 219 beam deflection, electrostatic 180 bending band 114 beveling 93, 143 , 147 BF2 ... production 39 nanoparticle 107, 135 – applications 117 – characterization 114 – Co nanoparticle 228 – fabrication 107 – GaN 114 nanopolishing of diamond 143 – characterization 144 na...

Ngày tải lên: 12/08/2014, 02:23

... special case of the Shockley-Hall-Read generation recom- Fig 3.5 Raman shift of H2 bonds (a) and of Si-H bonds (b) [22 ] 3 .2 Characterization of Nanodefects in Crystals 21 bination statistics: q ... Czochralski (Cz) Si is plasma-treated for 120 at 25 0 °C and annealed in air for 10 at temperatures between 25 0 °C and 600 °C The Raman shift is measured in two spectral regions [22 ,...

Ngày tải lên: 12/08/2014, 02:23

... homo-pin or epitaxial heterojunction structures A typical EL spectrum can be seen in Fig 3. 25 Fig 3. 23 Electroluminescence of an implanted MOS oxide [33 ] 3. 4 Nuclear Track Nanodefects 35 Fig 3. 24 ... E = 30 0 keV, light-gray symbols: 1·1015, 1·1016, and 1·1017 cm helium dose, E = MeV The concentrations were determined by secondary ion mass spectroscopy [32 ] 34 Nanodefects 3....

Ngày tải lên: 12/08/2014, 02:23

... 10 19 10 10 [H] 18 10 [O] 0.0 0 .5 1.0 1 .5 2.0 2 .5 18 3.0 [O] 17 10 Depth, µm 20 1.0 1 .5 2.0 2 .5 3.0 20 120 1000 °C / H2 Concentration, cm-3 Concentration, cm-3 0 .5 10 19 240 1000 °C / H2 19 10 ... [O] 18 10 [H] [O] 18 10 17 17 0 .5 1.0 1 .5 2.0 Depth, µm Fig 4 .52 0.0 Depth, µm 10 100.0 [H] 10 17 10 19 2 .5 3.0 10 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 Depth, µm Hydrogen and oxyge...

Ngày tải lên: 12/08/2014, 02:23

... one or quasi-one-dimensional electrical conducting structures (1D nanowires) metal-loaded zeolites with suitable channel structures are suggested as promising candidates [1 68, 186 , 187 ] Thus, the ... number, cm-1 (a) 1·10 Intensity, arb units 1·10 1·10 9·10 8 10 7·10 6·10 1000 1200 1400 1600 180 0 -1 Wave number, cm 1 .8 104 Intensity, arb units 1.6·10 1331 (b) 1 580 1.4·104 1353 14 78...

Ngày tải lên: 12/08/2014, 02:23

... irregularities and the focus position, holds: DOF k2 NA (7.2) k1 and k2 are pre-factors which take into account both the entrance opening of the lenses and the coherency degree of the light, and the ... by multi-layer systems with thin radiation-sensitive surface films Beside the already currently wide-spread anti-reflection layers as top or bottom coatings for sensitivity optimizatio...

Ngày tải lên: 12/08/2014, 02:23

... Dimming and deflecting voltages can range from some 10 to some 100 V and must be available as a wide-band (MHz to GHz) in order to achieve high dose accuracies and writing rates Navigation and Joining ... 29 °C and therefore requires practically no heating Heating to about 600 °C for some 10 seconds is necessary for moistening and remoistening of the metal needle in intervals...

Ngày tải lên: 12/08/2014, 02:23

... Fig 7.46 Measurement of a single 1,1'-dioctadecyl-3,3,3',3'-tetramethylindocarbocyanin molecule with a near-field probe (a) Measurement setup, (b) fluorescence image 7.7.2 Evaluation and Future ... the one hand On the other hand, the germanium doping causes a modification of the band structure and enables an ex- Fig 8.10 Cross section of a bipolar transistor, manufactured in self-adju...

Ngày tải lên: 12/08/2014, 02:23

... 9.2 Conduction band diagram and current-voltage characteristics at 77 and 300 K of an AlAs/InGaAs RTD (from [304]) characteristics suggest both bistable and astable applications, and, indeed, the ... technologies (from [319]) Logical function bistable XOR 9-state memory NOR2 + flip-flop NAND2 + flip-flop TTL 33 24 14 14 CMOS 16 24 12 12 ECL 11 24 33 33 RTD 4 218 Innovative Electronic...

Ngày tải lên: 12/08/2014, 02:23

... 0 .13 3 0.24 0.39 0.422 0.54 0.7 10 0 99.9 99.5 98.4 96 .1 96.3 96.2 94.2 10 0 99.6 98.9 97.8 95 .1 92 .1 84 .1 83.5 N 1. 662 1. 6 61 1.648 1. 646 1. 635 1. 610 1. 585 1. 896 1. 862 1. 867 1. 872 1. 877 1. 880 1. 885 ... 16 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig 10 (11 0) projections of indentation damages in...

Ngày tải lên: 19/06/2014, 11:20

... (Si) 2/ 3 (C) 2/ 3 y 3/4 0 2/ 3 2/ 3 1/3 1/3 2/ 3 2/ 3 0 2/ 3 2/ 3 0 2/ 3 2/ 3 1/3 1/3 z Wyckoff 4a 3/4 4d 2a 1/4 2a 1/3 2b 7/ 12 2b 2/ 3 2b 11/ 12 2b 2b 3/8 2b 2a 3/16 2a 1/4 2b 7/16 2b 2a 1/8 2a 1/6 2b 7 /24 ... optimized 2. 10 -0.54 cage-bowl-ring a MP2/TZV2d1f HF/6-31G∗ 2. 61 0.69 bowl-cage-ring a MR-MP2/TZV2d MP2/TZV2d1f 2. 42 -0. 02 cage-bowl-ring a MR-MP2/TZV2d1f MP2/...

Ngày tải lên: 19/06/2014, 11:20

... 2010) Photoluminescence spectrum from the front surface of the nanocrystalline film 70 Silicon Carbide – Materials, Processing and Applications in Electronic Devices containing cubic 3C and rhombohedral ... 0.297 0.099 0. 030 0 .33 0 0.264 0.165 0.099 0. 033 0.010 0. 230 0.184 0.115 0.069 0.0 23 0.007 120.4 60.0 30 .3 16.1 10.5 46.0 28 .3 16.9 10.2 7.2 93. 0 47.0 24.0 1...

Ngày tải lên: 19/06/2014, 11:20