Tunneling field effect transistors for low power logic design, simulation and technology demonstration

... TUNNELING FIELD- EFFECT TRANSISTORS FOR LOW POWER LOGIC: DESIGN, SIMULATION, AND TECHNOLOGY DEMONSTRATION YANG YUE (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... relatively large bandgap, leading to a low band-to-band tunneling (BTBT) rate and low drive current for Si TFETs Therefore, novel structure designs and materials are need adv...

Ngày tải lên: 10/09/2015, 09:24

... ADVANCED TRANSISTORS FOR SUPPLY VOLTAGE REDUCTION: TUNNELING FIELD- EFFECT TRANSISTORS AND HIGH- MOBILITY MOSFETS GUO PENGFEI (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE ... tr Rise time s V Voltage V Va Voltage amplitude V Vbase Base level voltage V VDD Supply voltage V VDS Drain voltage V VFB Flatband voltage V VGS V VTH Gate voltage Max...

Ngày tải lên: 10/09/2015, 09:01

... FABRICATION AND CHARACTERIZATION OF TUNNELING FIELD EFFECT TRANSISTORS (TFETs) YANG LITAO B Eng (Hons.), NUS A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL ... Chapter Experimental Study of Tunneling Field Effect Transistors This chapter documents the experimental study on the fabrication of tunneling field effe...

Ngày tải lên: 06/10/2015, 20:36

... Abstract Contact and Source/ Drain Engineering for Advanced III- V Field- Effect Transistors By Kong Yu Jin, Eugene Doctor of Philosophy – Electrical and Computer Engineering National University ... metallization V Voltage Vd Voltage or bias applied to the drain of a MOSFET Vdd Supply voltage Vg Voltage or bias applied to the gate of a MOSFET Vt,sat Saturation thr...

Ngày tải lên: 30/09/2015, 05:43

... Databook.fxp 1/13/99 2:09 PM Page H-3 H-3 01/99 Junction Field Effect Transistors InterFET Application Notes Gate Gate P Source P Drain N P Source N Drain ... 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page H-4 H-4 01/99 Junction Field Effect Transistors InterFET Application Notes the gate to drain reverse biased depletion region ... voltage controlle...

Ngày tải lên: 13/12/2013, 22:15

... CHAPTER 4: Characteristics Field- Effect Transistor CHAPTER 4: CHARACTERISTICS OF FIELD- EFFECT TRANSISTOR 4. 1 INTRODUCTION The operation of the field- effect transistor (FET) ... values of vDS in the pinchoff region:  v  iD  I DSS   GS   V  p0   Val de Loire Program p.61 CHAPTER 4: Characteristics Field- Effect Transistor 4. 4 JFET BIAS LINE AND...

Ngày tải lên: 18/05/2014, 18:57

... result in the variation of the operation point, it is desirable to keep the current level constant over a range of temperatures In order to realize such operation of the nanoribbon FETs, we propose ... the bottom of the channel surface Table compares the off-state drain leakage portion of the two methods at different temperatures As shown in Table 1, in the case of method (1...

Ngày tải lên: 21/06/2014, 08:20

... Section 1, a novel critical-band transform algorithm is proposed to approximate the critical-band filtering of the human ear It consists of two transforms: a constant- Q transform (CQT) in the ... speech systems In this study, we develop an efficient critical-band transform algorithm and an architecture for approximating the critical-band filtering of the human ear...

Ngày tải lên: 22/06/2014, 19:20

... consumption figures for a 180 nm UWB receiver with the same functionality but relying on four-phase sampling of the full UWB pulse frame are 86 mW for four ADCs operating at 300 MHz and 75 mW for digital ... mixed-mode impulse UWB transceiver with ITRS 2004 roadmap parameters It is concluded that the leakage power consumption is going to become important in low-power UWB rece...

Ngày tải lên: 22/06/2014, 22:20

... Design for Low Power Slide 19 Low Power Design  Reduce dynamic power – α: clock gating, sleep mode – C: – VDD: – f:  Reduce static power CMOS VLSI Design Design for Low Power Slide 20 Low Power Design ... low leakage devices, Pstatic = 749 mW (!) CMOS VLSI Design Design for Low Power Slide 18 Low Power Design  Reduce dynamic power – α: – C:...

Ngày tải lên: 01/07/2014, 11:20

... leads: drain, gate, and source which are similar to the collector, base, and emitter of a bipolar junction transistor (BJT) • JFETs come in N-channel and P-channel types similar to NPN and PNP for

Ngày tải lên: 08/08/2014, 16:22

... oxygen and water molecules into the film more difficult, hence minimizing the doping of the polymer at the semiconductor- insulator interface 1.3 Nature of charge carriers The intrinsic motion of charge ... limited by the interchain transport of charge carriers instead of the relatively fast intrachain transport in the absence of backbone imperfections The morphology of the...

Ngày tải lên: 10/09/2015, 08:34

... anisotropic transport along the polymer chain and in π-stacking direction could be modeled as hopping in a cross lattice in αR space with αR defined as the interchain coupling strength This transport ... existing hopping transport models to compare the charge transport behavior in 2D and 3D In Chapter 3, we develop an “universal“ twodimensional charge transport model...

Ngày tải lên: 10/09/2015, 09:05

... characterization of Schottky contacts on n -GaN 64 Rh -based Schottky contacts on n -GaN 66 3.2 3.2.1 Electrical properties of Rh -based Schottky contacts on n -GaN 66 3.2.2 Role of Ni in Rh -based Schottky contacts ... INVESTIGATION ON PERFORMANCE AND RELIABILITY IMPROVEMENTS OF GAN- BASED HETEROSTRUCTURE FIELD EFFECT TRANSISTORS TIAN FENG (M Eng.,...

Ngày tải lên: 11/09/2015, 10:05